沈阳理工大学学士学位论文AlGaN是一种重要半导体光电材料，具有最高的直接带隙，高热导率，高熔点，高硬度，低膨胀系数，优良的化学稳定性和无毒性等特点[1]。采用化学气相沉积法，在较低工艺温度下将金属铝粉直接氮化合成纤锌矿结构的AlN纳米线和镓掺杂的AlGaN纳米线。分别用拉曼光谱仪(Raman)、扫描电子显微镜(SEM)和能谱对AlN纳米线的形貌和光学性能进行表征。比拟、分析光致发光光谱，定性的探讨AlGaN的发光机理是缺陷发光。结果说明：不同温度合成的AlGaN的发光谱的峰位不同，是由氮空位或镓空位造成。温度的升高由镓空位引起的缺陷发光带宽有变窄的趋势，由氮空位的引起的缺陷发光带宽有变宽的趋势。目前以AlGaN组成的发光层可以实现红色、绿色和蓝色显示的开展状态。随着研究的深入AlGaN将会是一种很有开展前途的发光半导体材料。关键字：氮化镓铝；半导体材料；发光特性I沈阳理工大学学士学位论文AbstractAlGaNsemiconductorcrystalswithhighthermalconductivity,hightemperatureinsulationresistanceanddielectricpropertiesofmaterialsunderhightemperaturestrength,lowcoefficientofthermalexpansionandthematchwiththesiliconsemiconductormaterials,non-toxic,etc.,withgoodopticalperformance.CurrentlyknowntoAlGaNemittinglayercomposedofred,greenandbluedisplaystateofdevelopment.Within-depthstudyAlGaNwillbeapromisinglight-emittingsemiconductorcrystals.TheuseofhightemperaturevacuumsinteringwaspreparedAlGaNmicrocrystalline,andphotoluminescencemeasurements.Compare,analyzeandsummarizethedifferentcrystallinequalityofAlGaNspectralpeakpositionandpeakwidth,QualitativeStudyonAlGaNlight-emittingmechanism.InspectiononAlGaNlight-emittingintheEnglishliterature,aqualitativeunderstandingofthestructureandbasicpropertiesoftheAlGaN.Inspectionofsemiconductormaterials,light-emittingaspectsofthebook,understandingbetweenlightandmatterinteractionsandthesemiconductormaterialofthelight-emittingprinciple.Keywords:AlGaN；Semiconductormaterials；LuminescentpropertiesII沈阳理工大学学士学位论文目录1绪论.............................................................11.1研究的意义.....................................................................................................
