diodesspicemodels-all.txt

10A01********************************************************************************************************************* *SRC=10A01;DI_10A01;Diodes;Si; 50.0V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A01 D ( IS=844n RS=2.06m BV=50.0 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* 10A02********************************************************************************************************************* *SRC=10A02;DI_10A02;Diodes;Si; 100V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A02 D ( IS=844n RS=2.06m BV=100 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* 10A03********************************************************************************************************************* *SRC=10A03;DI_10A03;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A03 D ( IS=844n RS=2.06m BV=200 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* 10A04********************************************************************************************************************* *SRC=10A04;DI_10A04;Diodes;Si; 400V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A04 D ( IS=844n RS=2.06m BV=400 IBV=10.0u + CJO=277p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* 10A05********************************************************************************************************************* *SRC=10A05;DI_10A05;Diodes;Si; 600V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A05 D ( IS=844n RS=2.06m BV=600 IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* 10A06********************************************************************************************************************* *SRC=10A06;DI_10A06;Diodes;Si; 800V 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A06 D ( IS=844n RS=2.06m BV=800 IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* 10A07********************************************************************************************************************* *SRC=10A07;DI_10A07;Diodes;Si; 1.00kV 10.0A 3.00us Diodes Inc. 10A Rectifier .MODEL DI_10A07 D ( IS=844n RS=2.06m BV=1.00k IBV=10.0u + CJO=148p M=0.333 N=2.06 TT=4.32u ) ********************************************************************************************************************* 1N4001*SRC=1N4001;DI_1N4001;Diodes;Si; 50.0V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4001 D ( IS=76.9p RS=42.0m BV=50.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) 1N4001G*************************************************************************************************************************************** *SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** 1N4002*SRC=1N4002;DI_1N4002;Diodes;Si; 100V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4002 D ( IS=76.9p RS=42.0m BV=100 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) 1N4002G*************************************************************************************************************************************** *SRC=1N4002G;DI_1N4002G;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4002G D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** 1N4003*SRC=1N4003;DI_1N4003;Diodes;Si; 200V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4003 D ( IS=76.9p RS=42.0m BV=200 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) 1N4003G*************************************************************************************************************************************** *SRC=1N4003G;DI_1N4003G;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4003G D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** 1N4004*SRC=1N4004;DI_1N4004;Diodes;Si; 400V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4004 D ( IS=76.9p RS=42.0m BV=400 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) 1N4004G*************************************************************************************************************************************** *SRC=1N4004G;DI_1N4004G;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4004G D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** 1N4005*SRC=1N4005;DI_1N4005;Diodes;Si; 600V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4005 D ( IS=76.9p RS=42.0m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) 1N4005G*************************************************************************************************************************************** *SRC=1N4005G;DI_1N4005G;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4005G D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** 1N4006*SRC=1N4006;DI_1N4006;Diodes;Si; 800V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4006 D ( IS=76.9p RS=42.0m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) 1N4006G*************************************************************************************************************************************** *SRC=1N4006G;DI_1N4006G;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4006G D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** 1N4007*SRC=1N4007;DI_1N4007;Diodes;Si; 1.00kV 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4007 D ( IS=76.9p RS=42.0m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) 1N4007G*************************************************************************************************************************************** *SRC=1N4007G;DI_1N4007G;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4007G D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) ************************************************************************************************************************************** 1N4148W*SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. .MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) 1N4148WS*SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) 1N4148WT*SRC=1N4148WT;DI_1N4148WT;Diodes;Si; 80.0V 0.125A 4.00ns Diodes Inc. Switching .MODEL DI_1N4148WT D ( IS=111n RS=0.628 BV=80.0 IBV=1.00u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) 1N4448HLP*SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HLP D ( IS=3.2n RS=0.761 BV=100.0 IBV=100n ISR=5n + CJO=1.3p M=0.21 VJ=.5 N=1.88 TT=3n ) 1N4448HWS*SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HWS D ( IS=24.7n RS=84.4m BV=80.0 IBV=100n + CJO=3.50p M=0.333 N=2.12 TT=5.76n ) 1N4448HWT*SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching .MODEL DI_1N4448HWT D ( IS=137f RS=0.168 BV=80.0 IBV=100n + CJO=3.56p M=0.333 N=1.11 TT=5.76n ) 1N4448W*SRC=1N4448W;DI_1N4448W;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. .MODEL DI_1N4448W D ( IS=355p RS=0.168 BV=75.0 IBV=2.50u + CJO=4.00p M=0.333 N=1.70 TT=5.76n ) 1N4448WS*SRC=1N4448WS;DI_1N4448WS;Diodes;Si; 75.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448WS D ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u + CJO=4.00p M=0.333 N=2.12 TT=5.76n ) 1N4933*SRC=1N4933;DI_1N4933;Diodes;Si; 50.0V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4933 D ( IS=830n RS=34.0m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) 1N4934*SRC=1N4934;DI_1N4934;Diodes;Si; 100V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4934 D ( IS=830n RS=34.0m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) 1N4935*SRC=1N4935;DI_1N4935;Diodes;Si; 200V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4935 D ( IS=830n RS=34.0m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) 1N4936*SRC=1N4936;DI_1N4936;Diodes;Si; 400V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4936 D ( IS=830n RS=34.0m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) 1N4937*SRC=1N4937;DI_1N4937;Diodes;Si; 600V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4937 D ( IS=830n RS=34.0m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) 1N5400*SRC=1N5400;DI_1N5400;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5400 D ( IS=63.0n RS=14.1m BV=50.0 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) 1N5401*SRC=1N5401;DI_1N5401;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5401 D ( IS=63.0n RS=14.1m BV=100 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) 1N5402*SRC=1N5402;DI_1N5402;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5402 D ( IS=63.0n RS=14.1m BV=200 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) 1N5404*SRC=1N5404;DI_1N5404;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5404 D ( IS=63.0n RS=14.1m BV=400 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) 1N5406*SRC=1N5406;DI_1N5406;Diodes;Si; 600V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5406 D ( IS=63.0n RS=14.1m BV=600 IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) 1N5407*SRC=1N5407;DI_1N5407;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5407 D ( IS=63.0n RS=14.1m BV=800 IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) 1N5408*SRC=1N5408;DI_1N5408;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5408 D ( IS=63.0n RS=14.1m BV=1.00k IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) 1N5711WS*SRC=1N5711WS;DI_1N5711WS;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. .MODEL DI_1N5711WS D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) 1N5817*SRC=1N5817;DI_1N5817;Diodes;Si; 20.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5817 D ( IS=870u RS=81.3m BV=20.0 IBV=1.00m + CJO=203p M=0.333 N=1.81 TT=4.32u ) 1N5818*SRC=1N5818;DI_1N5818;Diodes;Si; 30.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5818 D ( IS=263u RS=73.1m BV=30.0 IBV=1.00m + CJO=203p M=0.333 N=1.90 TT=4.32u ) 1N5819*SRC=1N5819;DI_1N5819;Diodes;Si; 40.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5819 D ( IS=390n RS=0.115 BV=40.0 IBV=1.00m + CJO=203p M=0.333 N=1.70 TT=4.32u ) 1N5819HW*SRC=1N5819HW;DI_1N5819HW;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5819HW D ( IS=191u RS=42.0m BV=40.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) 1N6263W*SRC=1N6263W;DI_1N6263W;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_1N6263W D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) 1SMB5928B* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=23/12/2014 *VERSION=1 .model 1SMB5929B D(IS=1n RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=10u BV=15 NBV=10 IBV=25m TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT 1SS361UDJ*SRC=1SS361UDJ; 80V 0.3A 4.0ns Diodes Inc. Switching Diode D1 1 = A 2 = C DI_1SS361UDJ .MODEL DI_1SS361UDJ D + IS = 2.0n + N = 1.83 + BV = 80 + IBV = 1.00u + RS = 0.7 + CJO = 0.71p + VJ = 5m + M = 9m + FC = 0.5 + TT = 4n 2DA1201Y*DIODES_INC_SPICE_MODEL_DA1201Y *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=06/07/2012 *VERSION=1 .MODEL DA1201Y PNP IS=1.6E-13 NF=1 BF=210 VAF=175 ISE=3E-14 IKF=4.2 + NE=1.4 BR=12 VAR=5.15 ISC=1E-13 NC=1.08 IKR=0.7 RC=0.013 RB=0.2 RE=0.016 + QUASIMOD=1 RCO=4 GAMMA=1.4E-8 CJC=42E-12 MJC=0.32 VJC=0.44 CJE=237E-12 + MJE=0.44 VJE=0.85 TF=0.95E-9 TR=22E-8 TRC1=.005 TRB1=.005 TRE1=.005 XTB=1.4 * 2DA1774R*SRC=2DA1774R;DI_2DA1774R;BJTs PNP; Si; 50.0V 0.150A 250MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DA1774R PNP (IS=15.2f NF=1.00 BF=523 VAF=127 + IKF=54.7m ISE=3.88p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.710 RB=2.84 RC=0.284 + XTB=1.5 CJE=42.6p VJE=1.10 MJE=0.500 CJC=13.7p VJC=0.300 + MJC=0.300 TF=453p TR=96.4n EG=1.12 ) 2DA1797* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DA1797 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13 + NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07 + RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705 + MJC=.46 * *$ 2DA1971*DIODES_INC_SPICE_MODEL_2DA1971 *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/10/2012 *VERSION=2 .MODEL 2DA1971 PNP IS =1.305E-13 NF =1.0004 BF =150 VAF=350 +ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1 +ISC=2E-13 NC =1.8 VAR=30 BR =2.5 RB =.1 RE =.01 RC =.01 +CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12 TF =1E-9 TR =1200E-9 +XTB=1.7 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * 2DB1132R*SRC=2DB1132R;DI_2DB1132R;BJTs PNP; Si; 32.0V 1.00A 200MHz - .MODEL DI_2DB1132R NPN (IS=3.90f NF=1.00 BF=302 VAF=102 + IKF=0.989 ISE=6.63f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=96.5m RB=0.386 RC=38.6m + XTB=1.5 CJE=127p VJE=1.10 MJE=0.500 CJC=32.4p VJC=0.300 + MJC=0.300 TF=741p TR=123n EG=1.12 ) 2DB1182Q*DIODES_INC_SPICE_MODEL 2DB1182Q *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=6Nov2012 *VERSION=1 .MODEL 2DB1182Q PNP (IS=24E-14 NF=1.00 BF=200 ISE=10E-15 NE=1.28 VAF=127 + IKF=3.34 BR=16.00 NR=1.00 ISC=30E-15 NC=1 + VAR=20.0 IKR=5.25 RE=33.2m RB=0.133 RC=33.3m + XTB=1.5 CJE=411p VJE=.75 MJE=0.37 CJC=93.24p VJC=0.500 + MJC=0.3300 TF=1.27n TR=230n EG=1.2 XTI=3) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * 2DB1184Q*DIODES_INC_SPICE_MODEL 2DB1184Q *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2012 *VERSION=1 .MODEL 2DB1184Q PNP (IS=24E-14 NF=1.00 BF=200 ISE=10E-15 NE=1.28 VAF=127 + IKF=3.34 BR=16.00 NR=1.00 ISC=30E-15 NC=1 + VAR=20.0 IKR=5.25 RE=33.2m RB=0.133 RC=33.3m + XTB=1.5 CJE=411p VJE=.75 MJE=0.37 CJC=93.24p VJC=0.500 + MJC=0.3300 TF=1.27n TR=230n EG=1.2 XTI=3) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * 2DB1694* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DB1694 PNP IS=2.817E-13 BF=550 IKF=0.63 VAF=28.4 + ISE=4.76E-14 NE=1.492 BR=42 IKR=0.293 VAR=10.21 ISC=2.7E-14 + NC=1.124 RB=0.173 RE=0.171 RC=0.089 CJC=28.5E-12 MJC=0.506 + VJC=0.843 CJE=92E-12 MJE=0.524 VJE=1.021 TF=0.8E-9 TR=20E-9 * *$ 2DB1713* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=17Jun2013 *VERSION=1 * .MODEL 2DB1713 PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11 +ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5 +ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12 +MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * 2DB1714* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DB1714 PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 * *$ 2DC2412R*SRC=2DC2412R;DI_2DC2412R;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DC2412R NPN (IS=15.5f NF=1.00 BF=524 VAF=127 + IKF=54.7m ISE=3.90p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.135 RE=0.290 RB=1.16 RC=0.116 + XTB=1.5 CJE=22.7p VJE=1.10 MJE=0.500 CJC=7.34p VJC=0.300 + MJC=0.300 TF=698p TR=121n EG=1.12 ) 2DC4617QLP*SRC=2DC4617QLP;DI_2DC4617QLP;BJTs NPN; Si; 50.0V 0.100A 200MHz .MODEL DI_2DC4617QLP NPN (IS=1.21f NF=1.00 BF=202 VAF=127 + IKF=98.0m ISE=5.55f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.575 RB=2.30 RC=0.230 + XTB=1.5 CJE=15.6p VJE=1.10 MJE=0.500 CJC=6.12p VJC=0.300 + MJC=0.300 TF=765p TR=126n EG=1.12 ) 2DC4617R*SRC=2DC4617R;DI_2DC4617R;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. Bipolar Transistor .MODEL DI_2DC4617R NPN (IS=15.5f NF=1.00 BF=524 VAF=127 + IKF=54.7m ISE=3.90p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.135 RE=0.290 RB=1.16 RC=0.116 + XTB=1.5 CJE=22.7p VJE=1.10 MJE=0.500 CJC=7.34p VJC=0.300 + MJC=0.300 TF=698p TR=121n EG=1.12 ) 2DC4672* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DC4672 NPN IS=2.218E-13 NF=.9956 BF=230 IKF=2 VAF=100 ISE=2.9E-14 + NE=1.35 NR=.995 BR=56 IKR=1 VAR=30 ISC=2.971E-13 NC=1.321 RB=.04 + RE=.075 RC=.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF=.77E-9 + TR=27E-9 * *$ 2DD1664R* *DIODES_INC_SPICE_MODEL 2DD1664R *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/07/2014 *VERSION=1 .MODEL DD1664R NPN IS=150E-15 NF=1 BF=224 + ISE=1E-15 NE=1.35 NR=1 BR=28 ISC=6E-14 IKF=5 NK=.52 VAF=30 + NC=1.3 RB=0.5 RE=0.1 RC=0.134 QUASIMOD=1 RCO=1 GAMMA=50E-11 VO=10 + CJC=36.5E-12 MJC=0.36 VJC=0.55 CJE=139.4E-12 MJE=0.36 VJE=0.7 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.2 *QUASIMOD=1 RCO=80 GAMMA=4E-7 IKR=0.7 VAR=64 *$ * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * 2DD1766Q*SRC=2DD1766Q;DI_2DD1766Q;BJTs NPN; Si; 32.0V 2.00A 250MHz - .MODEL DI_2DD1766Q NPN (IS=6.65f NF=1.00 BF=201 VAF=102 + IKF=2.97 ISE=13.0f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=68.7m RB=0.275 RC=27.5m + XTB=1.5 CJE=218p VJE=1.10 MJE=0.500 CJC=41.4p VJC=0.300 + MJC=0.300 TF=538p TR=101n EG=1.12 ) 2DD2652* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DD2652 NPN IS=2.66E-13 BF=550 IKF=2.25 VAF=34.6 + ISE=5.7E-14 NE=1.425 BR=280 IKR=0.9 VAR=12.25 + ISC=2.76E-13 NC=1.46 RB=0.22 RE=0.055 RC=0.038 + CJC=34.2E-12 MJC=0.298 VJC=0.441 CJE=103.5E-12 + MJE=0.357 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * *$ 2DD2656* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DD2656 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 * *$ 2DD2661* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DD2661 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * *$ 2DD2678* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/01/2009 *VERSION=1 * .MODEL 2DD2678 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * *$ 2DD2679* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/01/2009 *VERSION=1 * .MODEL 2DD2679 NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 + NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 + CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 + RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ 2N7002*ZETEX 2N7002 Spice Model v1.0 Last Revised 3/5/00 * .SUBCKT 2N7002 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 343 RL 3 5 6E6 C1 2 5 23.5P C2 3 2 4.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS 2N7002 * *$ * 2N7002(Z)* *Zetex 2N7002 Spice Model v1.0 Last Revised 3/5/00 * .SUBCKT 2N7002 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 343 RL 3 5 6E6 C1 2 5 23.5P C2 3 2 4.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS 2N7002 * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL 2N7002A*SRC=2N7002A;DI_2N7002A;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002A NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48 + PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700 + IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p + CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n ) * -- Assumes default L=100U W=100U -- 2N7002DW*SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET - One element of dual .MODEL DI_2N7002DW NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=34.2u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- 2N7002E*SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002E NMOS( LEVEL=1 VTO=2.50 KP=781u GAMMA=3.10 + PHI=.75 LAMBDA=83.2u RD=0.560 RS=0.560 + IS=120f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- 2N7002K*SRC=2N7002K;DI_2N7002K;MOSFETs N;Enh;60.0V 0.300A 2.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002K NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=104u RD=0.280 RS=0.280 + IS=150f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- 2N7002T*SRC=2N7002T;DI_2N7002T;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_2N7002T NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- 2N7002W*SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET .MODEL DI_2N7002W NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- 3.0SMCJ22A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/10/2009 *VERSION=1 *PIN_ORDER C A * .SUBCKT 30SMCJ22A 1 2 D1 2 11 Dmod1 L1 1 11 5E-9 .MODEL Dmod1 D (IS=1E-12 N=1.1 RS=0.01 TRS1=5E-4 CJO=5950E-12 VJ=0.51 + M=0.34 BV=25.3 IBV=100E-6 TBV1=8E-4) .ENDS 30SMCJ22A * *$ 3.0SMCJ28A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/04/2014 *VERSION=1 .model 30SMCJ28A D(IS=.1u RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=30 NBV=20 IBV=10u TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT 3.0SMCJ30A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/30/2015 *VERSION=1 .model 3_0SMCJ30A D(IS=.1u RS=0.15 CJO=17000p M=1 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=32 NBV=10 IBV=10u TT=4n EG=.84 TRS1=.1m) * (c) 2015 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT 6A05*SRC=6A05;DI_6A05;Diodes;Si; 50.0V 6.00A 2.00us Diodes Inc. .MODEL DI_6A05 D ( IS=52.4n RS=7.00m BV=50.0 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) 6A1*SRC=6A1;DI_6A1;Diodes;Si; 100V 6.00A 2.00us Diodes Inc. .MODEL DI_6A1 D ( IS=52.4n RS=7.00m BV=100 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) 6A10*SRC=6A10;DI_6A10;Diodes;Si; 1.00kV 6.00A 2.00us Diodes Inc. .MODEL DI_6A10 D ( IS=52.4n RS=7.00m BV=1.00k IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) 6A2*SRC=6A2;DI_6A2;Diodes;Si; 200V 6.00A 2.00us Diodes Inc. .MODEL DI_6A2 D ( IS=52.4n RS=7.00m BV=200 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) 6A4*SRC=6A4;DI_6A4;Diodes;Si; 400V 6.00A 2.00us Diodes Inc. .MODEL DI_6A4 D ( IS=52.4n RS=7.00m BV=400 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) 6A6*SRC=6A6;DI_6A6;Diodes;Si; 600V 6.00A 2.00us Diodes Inc. .MODEL DI_6A6 D ( IS=52.4n RS=7.00m BV=600 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) 6A8*SRC=6A8;DI_6A8;Diodes;Si; 800V 6.00A 2.00us Diodes Inc. .MODEL DI_6A8 D ( IS=52.4n RS=7.00m BV=800 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) AL5801* *DIODES_INC_SPICE_MODEL_AL5801 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=11/06/2012 *VERSION=2 .SUBCKT AL5801 BIAS FB OUT REXT COMP GND M1 1 2 3 3 Nmod1 RD OUT 1 Rmod1 450E-3 RS 23 3 Rmod1 27E-3 RG BIAS 22 1.5 RIN BIAS 23 2E11 RDS OUT 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS REXT 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=1 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=102 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) Q1 BIAS FB GND SWT Rbg FB GND 47000 Rbnc FB COMP 4700 .MODEL SWT NPN(IS=20E-14 NF=.99 BF=320 IKF=0.3 VAF=80 ISE=5E-14 NE=1.4 NR=1 BR=10 + IKR=0.06 VAR=10 ISC=2E-13 NC=1.3 RC=0.194 RB=0.5 RE=0.245 CJC=6.05E-12 MJC=0.175 VJC=0.4 + CJE=13E-12 MJE=0.36 VJE=0.7 TF=0.4E-9 TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=25 GAMMA=5E-8) .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * AL5802*DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=5OCT2011 *VERSION=1 *PINS ORDER OUT BIAS EN GND FB Rext .SUBCKT AL5802 1 2 3 4 5 6 Q1 1 3 6 T2 Q2 3 5 4 T1 R1 2 3 10K TC1=-4E-3 .MODEL T2 NPN IS=2.6E-14 NF=1 BF=300 ISE=4.5E-15 NE=1.5 + BR=5 ISC=2E-14 NC=1.3 NR=1 CJC=5.6E-12 MJC=0.24 VJC=0.4 + CJE=13.49E-12 MJE=0.37 VJE=0.75 .MODEL T1 NPN IS=1E-14 NF=1 BF=150 ISE=8E-15 NE=1.5 + BR=1.5 ISC=1.2E-13 NC=1.5 NR=1 CJC=5.279E-12 MJC=0.28 VJC=0.5 + CJE=8.92E-12 MJE=0.36 VJE=0.73 .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * AL8805*TITLE=AL8805 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=2 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8805 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * R32 21 31 1000 I31 21 31 100uA R31 31 32 1k C31 32 2 10p S31 31 21 32 2 S_31 .model S_31 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S32 53 2 32 2 S_32 .MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 49 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8805 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA AL8806*TITLE=AL8806 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=22 Jul 2013 *VERSION=3 *PIN_ORDER 1:SET, 2:GND, 3:GND, 4:CTRL, 5:SW, 6:SW, 7: N/C, 8: VIN * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * NOTE: set RELTOL=1E-5 for clean switching waveform .subckt AL8806 1 2 3 4 5 6 7 8 Rsh1 2 3 1u Rsh2 5 6 1u * * Block 1: Vref Generator * input nodes 8 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(8)-V(2)-VIL1+MUL1*(1-tanh((V(8)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(8)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 4 50k * Block 2: CTRL limiter * input nodes 4 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(4)-V(2)-VIL2+MUL2*(1-tanh((V(4)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(4)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * R32 21 31 1000 I31 21 31 100uA R31 31 32 1k C31 32 2 10p S31 31 21 32 2 S_31 .model S_31 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S32 53 2 32 2 S_32 .MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(8)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 8 1 1m ; input amplifier C51 2 1 3p ; input capacitance * SET input current; asymptote input nodes 1 and 2, outputs 1 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 1 2 value={yy5*(V(1)-V(2))/(aa5+(V(1)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 8 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 49 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 5 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 8 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(8)-V(2))} * Block 9: Protection diodes D91 2 5 D_1 ;SW D92 2 8 D_1 ;VIN D93 2 4 D_2 ;CTRL D94 8 1 D_2 ;SET forward D95 1 8 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8805 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA AL8807*TITLE=AL8807 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=17th Jan 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807 10 26 13 20 18 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input is V(18)-V(26) *required input parameters .param VIL1=0.7 VIH1=3.5 VOL1=0 VOH1=2.5 ; low and high limits of input and output .param MUL1=0.1 MUH1=0.05 ; low and high curve error *calculations .param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)} KH1={MUH1*tanh((VIH1-VIL1)/MUH1)} .param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)} ;gain slope E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-VIL1)/MUL1) + -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)} R4 14 13 50k * Block 2: CTRL limiter * tanh limiter, type 1, input nodes 13 and 26, outputs 12 and 26 .param VIH2=2.5 VOH2=2.5 ;high limits of input and output .param MU2=0.001 ; curve error .param SL2={VOH2/VIH2} ;gain slope E21 12 26 value={SL2*min(V(13)-V(26)-MU2*(1+tanh((V(13)-V(26)-VIH2-MU2)/MU2)),VOH2)} * Block 3: CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout 100uA R31 adj_lockout 31 1k C31 31 26 10p S4 adj_lockout 12 31 26 S_4 .model S_4 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S5 21 26 31 26 S_5 .MODEL S_5 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 26 value={0.5*(1+tanh(1e3*(V(43)-V(18)+5.7)))} R41 41 42 1k C41 42 26 20p R42 42 43 800k R43 43 26 200k S41 21 26 42 26 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 26 8 18 20 1m ; input amplifier C51 26 20 3p ; input capacitance * SET input current; asymptote input nodes 20 and 26, outputs 20 and 26 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 20 26 value={yy5*(V(20)-V(26))/(aa5+(V(20)-V(26))**nn5)**(1/nn5)} R51 26 9 10.417k R52 9 8 20.833k S51 9 26 23 26 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 8 26 0.5p G53 21 26 value={0.01*tanh(100*(V(8)-V(12)))} ;comparator C54 21 26 1f V3 24 26 700mV D8 24 21 Dclamp V4 22 26 8V D9 21 22 Dclamp * Block 6: Comp Delay and gate driver* R64 21 63 10Meg ; input filter with C61 C61 63 26 0.0015p ; G4 61 25 Value={0.1*(max(V(63)-V(25)-0.5,0))**2*(V(61)-V(25))} G5 25 62 Value={0.1*(max(V(25)-V(63)-0.5,0))**2*(V(25)-V(62))} R66 61 25 10meg R67 25 62 10meg R61 18 61 1.2 R62 62 26 1.2 R63 25 26 10k R65 25 64 1 ; driver current sense R13 23 64 330 ; output resistance-1 ohm C6 26 23 25f * Block 7: Output NMOS * S8 11 71 23 71 S_8 .MODEL S_8 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 11 10 50m ; on resistance = R72 + R73 + Ron(S8) R73 71 26 50m C5 11 71 100p C71 23 71 40p C72 11 23 15p * Block 8: Supply Current * G81 18 26 Value={(300u*(V(14)-V(26))/VOH1)+0.6u*(V(18)-V(26))} * Block 9: Protection diodes D91 26 10 D_1 ;SW D92 26 18 D_1 ;VIN D93 26 13 D_2 ;CTRL D94 18 20 D_2 ;SET forward D95 20 18 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA * AL8807 (Chinese Version)*TITLE=AL8807 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=17th Jan 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807 10 26 13 20 18 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input is V(18)-V(26) *required input parameters .param VIL1=0.7 VIH1=3.5 VOL1=0 VOH1=2.5 ; low and high limits of input and output .param MUL1=0.1 MUH1=0.05 ; low and high curve error *calculations .param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)} KH1={MUH1*tanh((VIH1-VIL1)/MUH1)} .param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)} ;gain slope E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-VIL1)/MUL1) + -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)} R4 14 13 50k * Block 2: CTRL limiter * tanh limiter, type 1, input nodes 13 and 26, outputs 12 and 26 .param VIH2=2.5 VOH2=2.5 ;high limits of input and output .param MU2=0.001 ; curve error .param SL2={VOH2/VIH2} ;gain slope E21 12 26 value={SL2*min(V(13)-V(26)-MU2*(1+tanh((V(13)-V(26)-VIH2-MU2)/MU2)),VOH2)} * Block 3: CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout 100uA R31 adj_lockout 31 1k C31 31 26 10p S4 adj_lockout 12 31 26 S_4 .model S_4 VSWITCH Roff=10e6 Ron=1 Voff=505mV Von=495mV S5 21 26 31 26 S_5 .MODEL S_5 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV * Block 4: UVLO with hysteresis* E41 41 26 value={0.5*(1+tanh(1e3*(V(43)-V(18)+5.7)))} R41 41 42 1k C41 42 26 20p R42 42 43 800k R43 43 26 200k S41 21 26 42 26 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 26 8 18 20 1m ; input amplifier C51 26 20 3p ; input capacitance * SET input current; asymptote input nodes 20 and 26, outputs 20 and 26 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 20 26 value={yy5*(V(20)-V(26))/(aa5+(V(20)-V(26))**nn5)**(1/nn5)} R51 26 9 10.417k R52 9 8 20.833k S51 9 26 23 26 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 8 26 0.5p G53 21 26 value={0.01*tanh(100*(V(8)-V(12)))} ;comparator C54 21 26 1f V3 24 26 700mV D8 24 21 Dclamp V4 22 26 8V D9 21 22 Dclamp * Block 6: Comp Delay and gate driver* R64 21 63 10Meg ; input filter with C61 C61 63 26 0.0015p ; G4 61 25 Value={0.1*(max(V(63)-V(25)-0.5,0))**2*(V(61)-V(25))} G5 25 62 Value={0.1*(max(V(25)-V(63)-0.5,0))**2*(V(25)-V(62))} R66 61 25 10meg R67 25 62 10meg R61 18 61 1.2 R62 62 26 1.2 R63 25 26 10k R65 25 64 1 ; driver current sense R13 23 64 330 ; output resistance-1 ohm C6 26 23 25f * Block 7: Output NMOS * S8 11 71 23 71 S_8 .MODEL S_8 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 11 10 50m ; on resistance = R72 + R73 + Ron(S8) R73 71 26 50m C5 11 71 100p C71 23 71 40p C72 11 23 15p * Block 8: Supply Current * G81 18 26 Value={(300u*(V(14)-V(26))/VOH1)+0.6u*(V(18)-V(26))} * Block 9: Protection diodes D91 26 10 D_1 ;SW D92 26 18 D_1 ;VIN D93 26 13 D_2 ;CTRL D94 18 20 D_2 ;SET forward D95 20 18 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807 * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA * AL8807A*TITLE=AL8807A MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807A 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * not used * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 330 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807A * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA AL8807A (Chinese Version)*TITLE=AL8807A MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Feb 2013 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * This model is intended for feasibility study of application * design. It is expected that it will not accurately represent * the device real performance. However some important features * of the device are modelled approximately. * The model does not include effects of temperature or self-heating. * Testing of prototype hardware and optimisation on the bench * is always required before production build. * * NOTE: set RELTOL=1E-5 for clean switching waveform * .subckt AL8807A 1 2 3 4 5 * Connections SW GND CTRL SET VIN * pins SOT23 1 2 3 4 5 * * Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2 .param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and output .param MUH1=0.05 MUL1=0.1 ; high and low curve error .param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-VIL1+MUL1)/MUL1)) + -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)} R11 11 3 50k * Block 2: CTRL limiter * input nodes 3 and 2, outputs 21 and 2 .param VIL2=0 VOL2=0 VIH2=2.5 VOH2=2.5 ;high and low limits of input and output .param MUH2=0.001 MUL2=0.2 ; high and low curve error .param SL2={(VOH2-VOL2)/(VIH2-VIL2)} ; gain slope E21 21 2 value={min(max(VOL2+SL2*(V(3)-V(2)-VIL2+MUL2*(1-tanh((V(3)-V(2)-VIL2+MUL2)/MUL2)) + -MUH2*(1+tanh((V(3)-V(2)-VIH2-MUH2)/MUH2))) ,VOL2),VOH2)} * Block 3: CTRL lockout with hysteresis * not used * Block 4: UVLO with hysteresis* E41 41 2 value={0.5*(1+tanh(1e3*(V(43)-V(5)+5.7)))} R41 41 42 1k C41 42 2 20p R42 42 43 800k R43 43 2 200k S41 53 2 42 2 S_41 .MODEL S_41 VSWITCH Roff=1e6 Ron=100 Voff=0.4 Von=0.6 * Block 5: Current Sense Comparator* G51 2 51 5 4 1m ; input amplifier C51 2 4 3p ; input capacitance * SET input current; asymptote input nodes 4 and 2, outputs 4 and 2 .param xx5=5 yy5=16u nn5=32;input corner, output limit, asymptote power .param aa5={xx5**nn5} G52 4 2 value={yy5*(V(4)-V(2))/(aa5+(V(4)-V(2))**nn5)**(1/nn5)} R51 2 52 10.417k R52 52 51 20.833k S51 52 2 66 2 S_51 .MODEL S_51 VSWITCH Roff=10e6 Ron=1.0 Voff=2.5V Von=2.8V C52 51 2 0.5p G53 53 2 value={0.01*tanh(100*(V(51)-V(21)))} ;comparator C54 53 2 1f V51 54 2 700mV D51 54 53 Dclamp V52 55 2 8V D52 53 55 Dclamp * Block 6: Comp Delay and gate driver* R64 53 63 10Meg ; input filter with C61 C61 63 2 0.0015p ; G61 61 65 Value={0.1*(max(V(63)-V(65)-0.5,0))**2*(V(61)-V(65))} G62 65 62 Value={0.1*(max(V(65)-V(63)-0.5,0))**2*(V(65)-V(62))} R66 61 65 10meg R67 65 62 10meg R61 5 61 1.2 R62 62 2 1.2 R63 65 2 10k R65 65 64 1 ; driver current sense R68 66 64 330 ; output resistance-1 ohm C62 2 66 25f * Block 7: Output NMOS * S71 72 71 66 71 S_71 .MODEL S_71 VSWITCH Roff=10e6 Ron=0.25 Voff=2.5V Von=2.8V R72 72 1 50m ; on resistance = R72 + R73 + Ron(S71) R73 71 2 50m C73 72 71 100p C71 66 71 40p C72 72 66 15p * Block 8: Supply Current * G81 5 2 Value={(300u*(V(11)-V(2))/VOH1)+0.6u*(V(5)-V(2))} * Block 9: Protection diodes D91 2 1 D_1 ;SW D92 2 5 D_1 ;VIN D93 2 3 D_2 ;CTRL D94 5 4 D_2 ;SET forward D95 4 5 D_2 ;SET reverse .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .model D_1 D IS=1e-14 BV=40 .model D_2 D IS=1e-14 BV=6.5 .ends AL8807A * ===================================================================== * * (c) 2013 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA AP8803*TITLE=AP8803 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX *DATE=6th Jan 2012 *VERSION=1 *PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN * * SIMetrix macromodel for AL8803 Buck LED Driver * based on work by Tim Wilson .subckt AL8803_SIMETRIX 10 26 13 20 18 * pins-------------------1---2---3----4---5 *names SW GND CTRL SET VIN * Vref Generator * E2 19 26 18 26 1 B111 14 26 V=Min(V(19), 1.25) R3 14 19 20k R4 14 13 200k * CTRL input filter * * Faster (but unrealistic) startup can be * achieved by changing initial conditions * on C1 to C3 to match the settled value. * eg 1.25V if CTRL is floating in the application * or equal to the external DC voltage applied to CTRL * or equal to the average value of the PWM signal * applied to CTRL C1 15 26 5p IC=0 C2 16 26 5p IC=0 C3 17 26 5p IC=0 R5 13 15 7.7meg R6 15 16 7.7meg R7 16 17 7.7meg E7 12 26 17 26 1 * CTRL lockout with hysteresis * R8 12 adj_lockout 1000 I1 12 adj_lockout DC 50uA C7 adj_lockout 12 1p IC=0 X_S4 adj_lockout 26 adj_lockout 12 AP_S4 X_S5 adj_lockout 26 23 26 AP_S5 * UV lockout * X_S6 18 26 23 26 AP_S6 * Main Function * G2 26 8 18 20 1m C4 26 20 20p R9 26 9 3.832k R10 9 8 10.859k X_S7 23 26 9 26 AP_S7 G3 21 26 8 12 1000m R11 26 21 1meg V3 24 26 700mV D8 24 21 Dclamp V4 22 26 6V D9 21 22 Dclamp * Comp Delay (Asymmetric) * E4 25 26 21 26 1 C6 26 23 25p R13 23 25 2k * Output NMOS * X_S8 23 26 11 26 AP_S8 R12 11 10 0.4 C5 26 10 100p * Supply Current * X_S3 adj_lockout 26 4 7 AP_S3 R1 26 7 1.58k R2 26 4 67k X_S2 18 26 6 4 AP_S2 V1 5 26 1V X_F1 6 5 18 26 AP_F1 * Timestep Control * * Only purpose is to force timestep without using a control card * V99 99 26 DC 0 AC 0 PULSE 0 0 0 100n 100n 500n 1u R99 99 26 100 .model Dzener D Is=1e-8 N=10 bv=1.245 ibv=1e-12 Cjo=.1e-12 Rs=.1 TBV1=4e-5 nbv=.01 .model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5 .subckt AP_F1 1 2 3 4 F_F1 3 4 VF_F1 1 VF_F1 1 2 0V .ends AP_F1 .subckt AP_S3 1 2 3 4 S_S3 3 4 1 2 S3 RS_S3 1 2 1G .MODEL S3 VSWITCH Roff=1e6 Ron=1.0 Voff=198mV Von=200mV .ends AP_S3 .subckt AP_S2 1 2 3 4 S_S2 3 4 1 2 S2 RS_S2 1 2 1G .MODEL S2 VSWITCH Roff=1e6 Ron=1.0 Voff=1.248V Von=1.25V .ends AP_S2 .subckt AP_S6 1 2 3 4 S_S6 3 4 1 2 S6 RS_S6 1 2 1G .MODEL S6 VSWITCH Roff=10e6 Ron=1.0 Voff=6.505V Von=6.495V .ends AP_S6 .subckt AP_S7 1 2 3 4 S_S7 3 4 1 2 S7 RS_S7 1 2 1G .MODEL S7 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV .ends AP_S7 .subckt AP_S8 1 2 3 4 S_S8 3 4 1 2 S8 RS_S8 1 2 1G .MODEL S8 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV .ends AP_S8 .subckt AP_S4 1 2 3 4 S_S4 3 4 1 2 S4 RS_S4 1 2 1G .MODEL S4 VSWITCH Roff=10e6 Ron=1 Voff=255mV Von=245mV .ends AP_S4 .subckt AP_S5 1 2 3 4 S_S5 3 4 1 2 S5 RS_S5 1 2 1G .MODEL S5 VSWITCH Roff=10e6 Ron=1.0 Voff=251mV Von=249mV .ends AP_S5 .ends AP8803_SIMETRIX * * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL AZ23C10*SRC=AZ23C10;DI_AZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.35 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.47f RS=3.45 N=2.23 ) AZ23C10W*SRC=AZ23C10W;DI_AZ23C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C10W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.32 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=3.45 N=2.23 ) AZ23C11*SRC=AZ23C11;DI_AZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.79 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=41.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.25f RS=4.60 N=2.97 ) AZ23C12*SRC=AZ23C12;DI_AZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=4.60 N=2.97 ) AZ23C13*SRC=AZ23C13;DI_AZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=37.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.90f RS=9.46 N=3.00 ) AZ23C15*SRC=AZ23C15;DI_AZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=14.5 N=3.00 ) AZ23C16*SRC=AZ23C16;DI_AZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.54f RS=24.5 N=3.00 ) AZ23C18*SRC=AZ23C18;DI_AZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=34.5 N=3.00 ) AZ23C18W*SRC=AZ23C18W;DI_AZ23C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C18W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=34.5 N=3.00 ) AZ23C20*SRC=AZ23C20;DI_AZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=34.5 N=3.00 ) AZ23C22*SRC=AZ23C22;DI_AZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=39.5 N=3.00 ) AZ23C24*SRC=AZ23C24;DI_AZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=64.5 N=3.00 ) AZ23C27*SRC=AZ23C27;DI_AZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=20.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=64.5 N=3.00 ) AZ23C2V7*SRC=AZ23C2V7;DI_AZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.263 .MODEL DF D ( IS=45.8p RS=35.3 N=1.10 + CJO=450p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16f RS=67.5 N=3.00 ) AZ23C30*SRC=AZ23C30;DI_AZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=19.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=64.5 N=3.00 ) AZ23C33*SRC=AZ23C33;DI_AZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=64.5 N=3.00 ) AZ23C36*SRC=AZ23C36;DI_AZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=74.5 N=3.00 ) AZ23C39*SRC=AZ23C39;DI_AZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=17.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34e-016 RS=74.5 N=3.00 ) AZ23C3V0*SRC=AZ23C3V0;DI_AZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.495 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=417p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=79.5 N=3.00 ) AZ23C3V3*SRC=AZ23C3V3;DI_AZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.787 .MODEL DF D ( IS=37.5p RS=34.7 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49f RS=79.5 N=3.00 ) AZ23C3V6*SRC=AZ23C3V6;DI_AZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ) AZ23C3V9*SRC=AZ23C3V9;DI_AZ23C3V9;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ) AZ23C43*SRC=AZ23C43;DI_AZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=16.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75e-016 RS=84.5 N=3.00 ) AZ23C47*SRC=AZ23C47;DI_AZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=2.63p RS=27.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.26e-016 RS=84.5 N=3.00 ) AZ23C4V3*SRC=AZ23C4V3;DI_AZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.77 .MODEL DF D ( IS=28.7p RS=34.0 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75f RS=79.5 N=3.00 ) AZ23C4V7*SRC=AZ23C4V7;DI_AZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.24 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10 + CJO=350p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.26f RS=62.5 N=3.00 ) AZ23C51*SRC=AZ23C51;DI_AZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.2 .MODEL DF D ( IS=2.42p RS=26.9 N=1.10 + CJO=16.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85e-016 RS=84.5 N=3.00 ) AZ23C5V1*SRC=AZ23C5V1;DI_AZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.73 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85f RS=44.5 N=3.00 ) AZ23C5V6*SRC=AZ23C5V6;DI_AZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN *VERSION=2 .SUBCKT DI_AZ23C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.32 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 CJO=102p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41f RS=24.5 N=3.00 ) .ENDS * *$ AZ23C5V6W*SRC=AZ23C5V6W;DI_AZ23C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=102p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) AZ23C6V2*SRC=AZ23C6V2;DI_AZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.99f RS=2.30 N=1.49 ) AZ23C6V8*SRC=AZ23C6V8;DI_AZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.93 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.64f RS=1.84 N=1.19 ) AZ23C6V8W*SRC=AZ23C6V8W;DI_AZ23C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V8W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) AZ23C7V5*SRC=AZ23C7V5;DI_AZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.74 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=59.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.30f RS=1.61 N=1.04 ) AZ23C8V2*SRC=AZ23C8V2;DI_AZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.01f RS=1.61 N=1.04 ) AZ23C9V1*SRC=AZ23C9V1;DI_AZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.00 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.72f RS=2.30 N=1.49 ) B0520LW*SRC=B0520LW;DI_B0520LW;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0520LW D ( IS=195u RS=49.4m BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.72 TT=7.20n ) B0520WS*SRC=B0520WS;DI_B0520WS;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=7OCT2011 *VERSION=1 .MODEL B0520WS D ( IS=1.5u RS=0.16 ISR=3u BV=22.0 IBV=.5m + CJO=107p M=0.45 VJ=.38 N=0.907 TT=5.6n EG=.69 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT B0530W*SRC=B0530W;DI_B0530W;Diodes;Si; 30.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0530W D ( IS=47.4u RS=26.8m BV=30.0 IBV=130u + CJO=225p M=0.333 N=1.66 TT=7.20n ) B0530WS*SRC=B0530WS;DI_B0530WS;Diodes;Si; 30.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0530WS D ( IS=897u RS=72.9m BV=30.0 IBV=500u + CJO=79.6p M=0.333 N=2.85 TT=14.4n ) B0540W*SRC=B0540W;DI_B0540W;Diodes;Si; 40.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0540W D ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u + CJO=225p M=0.333 N=0.700 TT=14.4n ) B0540WS*SRC=B0540WS;DI_B0540WS;Diodes;Si; 40.0V 0.500A 5.00ns Diodes, Inc. Schottky .MODEL DI_B0540WS D ( IS=685p RS=84.4m BV=40.0 IBV=5.00u + CJO=125p M=0.333 N=1.70 TT=7.20n B1100*SRC=B1100;DI_B1100;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100 D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) B1100B*SRC=B1100B;DI_B1100B;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100B D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) B1100LB*SRC=B1100LB;DI_B1100LB;Diodes;Si; 100V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B1100LB D ( IS=20.0n RS=24.7m BV=100 IBV=500n + CJO=225p M=0.333 N=1.22 TT=14.4n ) B120*SRC=B120;DI_B120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120 D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) B120B*SRC=B120B;DI_B120B;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120B D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) B130*SRC=B130;DI_B130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130 D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) B130B*SRC=B130B;DI_B130B;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130B D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) B130L*SRC=B130L;DI_B130L;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130L D ( IS=188u RS=18.5m BV=30.0 IBV=1.00m + CJO=331p M=0.333 N=1.65 TT=7.20n ) B130LAW*SRC=B130LAW;DI_B130LAW;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130LAW D ( IS=407u RS=75.5m BV=30.0 IBV=1.00m + CJO=119p M=0.333 N=1.70 TT=7.20n ) B130LB*SRC=B130LB;DI_B130LB;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B130LB D ( IS=458u RS=28.0m BV=30.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) B140*SRC=B140;DI_B140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140 D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) B140B*SRC=B140B;DI_B140B;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140B D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) B140HB*SRC=B140HB;DI_B140HB;Diodes;Si; 40.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B140HB D ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) B140HW*SRC=B140HW;DI_B140HW;Diodes;Si; 40.0V 1.00A 11.0ns Diodes Incorporated Schottky diode .MODEL DI_B140HW D ( IS=123n RS=66.4m BV=40.0 IBV=40.0u + CJO=119p M=0.333 N=1.07 TT=15.8n ) B150*SRC=B150;DI_B150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150 D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) B150B*SRC=B150B;DI_B150B;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150B D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) B160*SRC=B160;DI_B160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160 D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) B160B*SRC=B160B;DI_B160B;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160B D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) B170*SRC=B170;DI_B170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170 D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) B170B*SRC=B170B;DI_B170B;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170B D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) B180*SRC=B180;DI_B180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180 D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) B180B*SRC=B180B;DI_B180B;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180B D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) B190*SRC=B190;DI_B190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190 D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) B190B*SRC=B190B;DI_B190B;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190B D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) B2100*SRC=B2100;DI_B2100;Diodes;Si; 100.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B2100 D ( IS=746u RS=21.0m BV=100.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) B220*SRC=B220;DI_B220;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220 D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) B220A*SRC=B220A;DI_B220A;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220A D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) B230*SRC=B230;DI_B230;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230 D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) B230A*SRC=B230A;DI_B230A;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230A D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) B240*SRC=B240;DI_B240;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240 D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) B240A*SRC=B240A;DI_B240A;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) B250*SRC=B250;DI_B250;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250 D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) B250A*SRC=B250A;DI_B250A;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250A D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) B260*SRC=B260;DI_B260;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260 D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) B260A*SRC=B260A;DI_B260A;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260A D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) B270*SRC=B270;DI_B270;Diodes;Si; 70.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B270 D ( IS=746u RS=21.0m BV=70.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) B280*SRC=B280;DI_B280;Diodes;Si; 80.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B280 D ( IS=746u RS=21.0m BV=80.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) B290*SRC=B290;DI_B290;Diodes;Si; 90.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B290 D ( IS=746u RS=21.0m BV=90.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) B3100*SRC=B3100;DI_B3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B3100 D ( IS=916u RS=14.1m BV=100 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) B320*SRC=B320;DI_B320;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B320A*SRC=B320A;DI_B320A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B320B*SRC=B320B;DI_B320B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B330*SRC=B330;DI_B330;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B330A*SRC=B330A;DI_B330A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B330B*SRC=B330B;DI_B330B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B340*SRC=B340;DI_B340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340 D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B340A*SRC=B340A;DI_B340A;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340A D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B340B*SRC=B340B;DI_B340B;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340B D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B340LA*SRC=B340LA;DI_B340LA;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LA D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) B340LB*SRC=B340LB;DI_B340LB;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LB D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) B350*SRC=B350;DI_B350;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350 D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B350A*SRC=B350A;DI_B350A;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350A D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B350B*SRC=B350B;DI_B350B;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350B D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B360*SRC=B360;DI_B360;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360 D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B360A*SRC=B360A;DI_B360A;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360A D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B360B*SRC=B360B;DI_B360B;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360B D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) B370*SRC=B370;DI_B370;Diodes;Si; 70.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B370 D ( IS=916u RS=14.1m BV=70.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) B380*SRC=B380;DI_B380;Diodes;Si; 80.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B380 D ( IS=916u RS=14.1m BV=80.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) B390*SRC=B390;DI_B390;Diodes;Si; 90.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B390 D ( IS=916u RS=14.1m BV=90.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) B3L30LP*SRC=B3L30LP;DI_B3L30LP;Diodes;Si; 30.0V 3.00A 15.0ns Diodes INC Schottky rectifier .MODEL DI_B3L30LP D ( IS=25.1u RS=12.5m BV=30.0 IBV=450u + CJO=517p M=0.333 N=1.03 TT=21.6n ) B520C*SRC=B520C;DI_B520C;Diodes;Si; 20.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B520C D ( IS=617u RS=10.0m BV=20.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) B530C*SRC=B530C;DI_B530C;Diodes;Si; 30.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B530C D ( IS=617u RS=10.0m BV=30.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) B540C.LIB B540C * .MODEL B540C D ( +LEVEL = 1 IS = 1.5672e-06 RS = 0.0209949 +N = 1.01362 IBV = 0.0001 CJO = 8.98694e-10 +VJ = 0.396195 MJ = 0.457747 FC = 0.5 +XTI = 0.000352915 EG = 0.750278 TRS1 = 0.00406277 +TRS2 = 2.17553e-07 BV = 50 TT = 0 ) * .ENDL B540C B550C*SRC=B550C;DI_B550C;Diodes;Si; 50.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B550C D ( IS=66.7u RS=14.1m BV=50.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) B560C*SRC=B560C;DI_B560C;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B560C D ( IS=66.7u RS=14.1m BV=60.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) BAL99*SRC=BAL99;DI_BAL99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAL99 D ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u + CJO=1.72p M=0.333 N=2.35 TT=5.76n ) BAS116*SRC=BAS116;DI_BAS116;Diodes;Si; 60.0V 0.215A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAS116 D ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n + CJO=1.72p M=0.333 N=4.07 TT=4.32u ) BAS116LP3 *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=13/11/2013 *VERSION=1 .model BAS116LP3 D(IS=4f RS=0.1 CJO=2.37p M=0.4 VJ=0.6 ISR=.005n N=1.05 IKF=1m + BV=85 IBV=100u TT=40n EG=1.14 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * BAS116T*SRC=BAS116T;DI_BAS116T;Diodes;Si; 85.0V 0.215A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAS116T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) BAS116UDJ*SRC=BAS116UDJ; 400V 0.3A 50.0ns Diodes Inc. Switching Diode D1 1 = A 2 = C DI_BAS116UDJ .MODEL DI_BAS116UDJ D + IS = 1.1p + N = 1.42 + BV = 400 + IBV = 1.00u + RS = 0.350 + CJO = 1.95p + VJ = 60m + M = 173m + FC = 0.5 + TT = 50n BAS16*SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching .MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.60 TT=5.76n ) BAS16HLP*SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HLP D ( IS=5.31n RS=0.761 BV=80.0 IBV=100n + CJO=3.56p M=0.333 N=1.90 TT=5.76n ) BAS16LP*SRC=BAS16LP;DI_BAS16LP;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16LP D ( IS=74.3n RS=0.699 BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.35 TT=5.76n ) BAS16T*SRC=BAS16T;DI_BAS16T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ************************************************************************************************************************ BAS16TW*SRC=BAS16TW;DI_BAS16TW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16TW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) BAS16V*SRC=BAS16V;DI_BAS16V;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching diode - one element of device .MODEL DI_BAS16V D ( IS=412p RS=0.140 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=1.70 TT=5.76n ) BAS16W*SRC=BAS16W;DI_BAS16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) BAS19*SRC=BAS19;DI_BAS19;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS19 D ( IS=41.7n RS=0.270 BV=100 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) BAS19W*SRC=BAS19W;DI_BAS19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS19W D ( IS=114n RS=0.172 BV=100 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) BAS20*SRC=BAS20;DI_BAS20;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS20 D ( IS=41.7n RS=0.270 BV=150 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) BAS20DW*SRC=BAS20DW;DI_BAS20DW;Diodes;Si; 200V 0.300A 50.0ns Diodes Inc. Single Element of Dual BAS20DW .MODEL DI_BAS20DW D ( IS=2.86n RS=0.141 BV=200 IBV=100n + CJO=2.98p M=0.333 N=1.95 TT=72.0n ) BAS20W*SRC=BAS20W;DI_BAS20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS20W D ( IS=114n RS=0.172 BV=150 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) BAS21*SRC=BAS21;DI_BAS21;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21 D ( IS=41.7n RS=0.270 BV=200 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) BAS21DW*SRC=BAS21DW;DI_BAS21DW;Diodes;Si; 250V 0.300A 50.0ns Diodes Inc. Single Element of Dual BAS21DW .MODEL DI_BAS21DW D ( IS=2.86n RS=0.141 BV=250 IBV=100n + CJO=2.98p M=0.333 N=1.95 TT=72.0n ) BAS21T*SRC=BAS21T;DI_BAS21T;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21T D ( IS=401n RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=2.87 TT=72.0n ) BAS21W*SRC=BAS21W;DI_BAS21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21W D ( IS=114n RS=0.172 BV=200 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) BAS40*SRC=BAS40;DI_BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40-04* * This model account for one of the two diodes contained in the * BAS40-4 device. The other one is totally identical. * .LIB BAS40_04 * .SUBCKT BAS40_04 A K * D1 A K BAS40_1 D2 A K1 BAS40_2 V1 K1 K DC 217e-3 * .MODEL BAS40_1 D ( +LEVEL = 1 IS = 2.24014e-09 RS = 7.23547 +N = 1.02505 IKF = 0.255776 +CJO = 3.0881e-12 VJ = 119.67e-3 MJ = 183.18e-3 +FC = 0.5 XTI = 0.60541 EG = 0.75453 +TRS1 = 0.00733869 TRS2 = 1.45813e-05 IBV = 0.01 +BV = 40 TT = 6.02e-9 ) * .MODEL BAS40_2 D ( +LEVEL = 1 IS = 5.04958e-11 RS = 0.00692754 +N = 1.10729 XTI = 1.45276 EG = 1.46766 +TRS1 = 0.0021771 TRS2 = 0.000729073 IKF = 0.0102054 +IBV = 0.01 BV = 1e3 TT = 0 ) * .ENDS BAS40_04 * .ENDL BAS40_04 BAS40-04T*SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-04T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40-05*SRC=BAS40-05;DI_BAS40-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40-05T*SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40-06*SRC=BAS40-06;DI_BAS40-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40-06T*SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40BRW*SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40BRW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40DW-04*SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40DW-05*SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40DW-06*SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40LP*SRC=BAS40LP;DI_BAS40LP;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc Schottky .MODEL DI_BAS40LP D ( IS=2.93u RS=1.29 BV=40.0 IBV=200n + CJO=2.30p M=0.333 N=2.39 TT=7.20n ) BAS40T*SRC=BAS40T;DI_BAS40T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40TW*SRC=BAS40TW;DI_BAS40TW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Tripple, one node of three .MODEL DI_BAS40TW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40W*SRC=BAS40W;DI_BAS40W;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40W D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40W-04*SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40W-05*SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS40W-06*SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) BAS521*SRC=BAS521;BAS521;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode .MODEL BAS521 D ( IS=74.8n RS=0.288 BV=300 IBV=150n + CJO=810f M=0.333 N=2.41 TT=72.0n ) BAS521LP*SRC=BAS521LP;BAS521LP;Diodes;Si; 325V 0.250A 50.0ns DIODES Switching Diode .MODEL BAS521LP D ( IS=74.8n RS=0.288 BV=325 IBV=150n + CJO=810f M=0.333 N=2.41 TT=72.0n ) BAS70*SRC=BAS70;DI_BAS70;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. - .MODEL DI_BAS70 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70-04*SRC=BAS70-04;DI_BAS70-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70-04T*SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70-05*SRC=BAS70-05;DI_BAS70-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70-05T*SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70-06*SRC=BAS70-06;DI_BAS70-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70-06T*SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70BRW*SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70BRW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70DW-04*SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70DW-05*SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70DW-06*SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70JW*SRC=BAS70JW;DI_BAS70JW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70JW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70LP*BAS70LP;Schottky rectifier *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11NOV2011 *VERSION=1 .MODEL BAS70LP D ( IS=1.5n RS=14 ISR=3n BV=75 NBV=300 IBV=15n IKF=.4m + CJO=2.04p M=0.19 VJ=.4 N=.99 TT=1.6n EG=.8 XTI=.3 TBV1=.0001 TRS1=.0048) .SIMULATOR DEFAULT BAS70T*SRC=BAS70T;DI_BAS70T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70TW*SRC=BAS70TW;DI_BAS70TW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAS70TW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70W*SRC=BAS70W;DI_BAS70W;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70W D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70W-04*SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70W-05*SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAS70W-06*SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) BAT1000*SRC=BAT1000;DI_BAT1000;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_BAT1000 D ( IS=874n RS=65.3m BV=40.0 IBV=100u + CJO=175p M=0.333 N=0.823 TT=7.20n ) BAT400D*SRC=BAT400D;DI_BAT400D;Diodes;Si; 40.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT400D D ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u + CJO=119p M=0.333 N=1.26 TT=7.20n ) BAT40V*SRC=BAT40V;DI_BAT40V;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT40V D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u + CJO=11.9p M=0.333 N=1.14 TT=7.20n ) BAT40VC*SRC=BAT40VC;DI_BAT40VC;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT40VC D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u + CJO=11.9p M=0.333 N=1.14 TT=7.20n ) BAT42W*SRC=BAT42W;DI_BAT42W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) BAT42WS*SRC=BAT42WS;DI_BAT42WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) BAT43W*SRC=BAT43W;DI_BAT43W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) BAT43WS*SRC=BAT43WS;DI_BAT43WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) BAT46W*SRC=BAT46W;DI_BAT46W;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT46W D ( IS=603n RS=0.280 BV=100 IBV=5.00u + CJO=7.96p M=0.333 N=1.70 TT=7.20n ) BAT54*ZETEX BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * BAT54(Z)* *Zetex BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL BAT54A*SRC=BAT54A;DI_BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54ADW*SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54ADW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54AT*SRC=BAT54AT;DI_BAT54AT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54AW*SRC=BAT54AW;DI_BAT54AW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54BRW*SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54BRW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54C*SRC=BAT54C;DI_BAT54C;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54CDW*SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54CDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54CT*SRC=BAT54CT;DI_BAT54CT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54CW*SRC=BAT54CW;DI_BAT54CW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54DW******************************************************************************************************************************************* *SRC=BAT54DW;DI_BAT54DW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky, dual, one of two nodes .MODEL DI_BAT54DW D ( IS=235n RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=1.28 TT=7.20n ) ******************************************************************************************************************************************* BAT54JW*SRC=BAT54JW;DI_BAT54JW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54JW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54LP*BAT54LP Spice Model v1.0 Last Revised 08/04/2014 Diodes Inc SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_BAT54LP D ( IS=98.64n RS=1.080 BV=40.00 IBV=10.00 + CJO=222.3p M=548.8m N=1.140 TT=10.00n EG=480.0m VJ=5.075m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan BAT54LPS*SRC=BAT54LPS;DI_BAT54LPS;Diodes;Si; 30.0V 0.200A 2.00ns Diodes Inc. SBR/ SKY .MODEL DI_BAT54LPS D ( IS=20.9n RS=0.895 BV=30.0 IBV=2.00u + CJO=10.6p M=0.333 N=1.07 TT=2.88n ) BAT54S*SRC=BAT54S;DI_BAT54S;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54SDW*SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54SDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54ST*SRC=BAT54ST;DI_BAT54ST;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54ST D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54SW*SRC=BAT54SW;DI_BAT54SW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54SW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54T*SRC=BAT54T;DI_BAT54T;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54T D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54TW*SRC=BAT54TW;DI_BAT54TW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAT54TW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54V*SRC=BAT54V;DI_BAT54V;Diodes;Si; 29.6V 0.200A 5.00ns Diodes Inc. One Element of Dual Schottky Diodes .MODEL DI_BAT54V D ( IS=124n RS=0.210 BV=29.6 IBV=2.00 + CJO=13.3 M=0.333 N=1.19 TT=7.20n ) BAT54W*SRC=BAT54W;DI_BAT54W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54W D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT54WS*SRC=BAT54WS;DI_BAT54WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54WS D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) BAT750*SRC=BAT750;DI_BAT750;Diodes;Si; 40.0V 0.750A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT750 D ( IS=23.1u RS=82.3m BV=40.0 IBV=100u + CJO=225p M=0.333 N=1.16 TT=7.20n ) BAT750(Z).MODEL BAT750 D IS=7E-6 N=0.99 RS=130E-3 IKF=0.15 XTI=2 EG=0.58 + CJO=184.9p M=0.523 VJ=0.3905 Fc=0.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * BAT760*SRC=BAT760;DI_BAT760;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_BAT760 D ( IS=10.6u RS=49.9m BV=30.0 IBV=50.0u + CJO=49.3p M=0.333 N=1.35 TT=14.4n ) BAV116W*SRC=BAV116W;DI_BAV116W;Diodes;Si; 130V 0.215A 3.00us Diodes Inc. Low leakage diode .MODEL DI_BAV116W D ( IS=22.5p RS=0.282 BV=130 IBV=5.00n + CJO=2.40p M=0.333 N=1.67 TT=4.32u ) BAV16W*SRC=BAV16W;BAV16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. - .MODEL BAV16W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) BAV16WS*SRC=BAV16WS;BAV16WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL BAV16WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) BAV170*SRC=BAV170;DI_BAV170;Diodes;Si; 85.0V 0.215A 3.00us Diodes, Inc. diode .MODEL DI_BAV170 D ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.70 TT=4.32u BAV170T*SRC=BAV170T;DI_BAV170T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAV170T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) BAV199*SRC=BAV199;DI_BAV199;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode .MODEL DI_BAV199 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) BAV199DW*SRC=BAV199DW;DI_BAV199DW;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of BAV199DW array .MODEL DI_BAV199DW D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) BAV199T*SRC=BAV199T;DI_BAV199T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAV199T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) BAV199W*SRC=BAV199W;DI_BAV199W;Diodes;Si; 85.0V 0.160A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAV199W D ( IS=22.5p RS=0.264 BV=85.0 IBV=10.0u + CJO=2.00 M=0.333 N=1.70 TT=4.32u ) BAV19W*SRC=BAV19W;BAV19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. - .MODEL BAV19W D ( IS=1.09u RS=0.105 BV=100 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) BAV19WS*SRC=BAV19WS;BAV19WS;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL BAV19WS D ( IS=1.09u RS=0.105 BV=100 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) BAV20W*SRC=BAV20W;DI_BAV20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. - .MODEL DI_BAV20W D ( IS=1.09u RS=0.105 BV=150 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) BAV20WS*SRC=BAV20WS;DI_BAV20WS;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV20WS D ( IS=1.09u RS=0.105 BV=150 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) BAV21W*SRC=BAV21W;DI_BAV21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. - .MODEL DI_BAV21W D ( IS=1.09u RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) BAV21WS*SRC=BAV21WS;DI_BAV21WS;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV21WS D ( IS=1.09u RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) BAV23A*SRC=BAV23A;DI_BAV23A;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23A D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) BAV23C*SRC=BAV23C;DI_BAV23C;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23C D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) BAV23S*SRC=BAV23S;DI_BAV23S;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23S D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) BAV3004W*SRC=BAV3004W;DI_BAV3004W;Diodes;Si; 350V 0.225A 50.0ns Diodes, Inc. switching .MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n + CJO=1.17p M=0.333 N=2.37 TT=72.0n ) BAV3004WS*SRC=BAV3004WS;DI_BAV3004WS;Diodes;Si; 350V 0.225A 50.0ns Diodes, Inc. switching .MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n + CJO=1.17p M=0.333 N=2.37 TT=72.0n ) BAV5004LP*SRC=BAV5004LP; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_BAV5004LP .MODEL DI_BAV5004LP D + IS = 10n + N = 2.15 + BV = 400 + IBV = 1.00u + RS = 0.6 + CJO = 0.90p + VJ = 55m + M = 28m + FC = 0.5 + TT = 50n BAV70*SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=1.70 TT=5.76n ) BAV70DW*SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=1.70 TT=5.76n ) BAV70T*SRC=BAV70T;DI_BAV70T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAV70T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) BAV70W*SRC=BAV70W;DI_BAV70W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAV70W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) BAV756DW*SRC=BAV756DW;DI_BAV756DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching - one element of device .MODEL DI_BAV756DW D ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=2.45 TT=5.76n ) BAV99*SRC=BAV99;DI_BAV99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. switching .MODEL DI_BAV99 D ( IS=261p RS=0.140 BV=75.0 IBV=2.50u + CJO=1.19p M=0.333 N=1.70 TT=5.76n ) BAV99BRW*SRC=BAV99BRW;DI_BAV99BRW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element .MODEL DI_BAV99BRW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) BAV99DW*SRC=BAV99DW;DI_BAV99DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element .MODEL DI_BAV99DW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) BAV99T*SRC=BAV99T;DI_BAV99T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAV99T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) BAV99W*SRC=BAV99W;DI_BAV99W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAV99W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) BAW101S*SRC=BAW101S;BAW101S;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode .MODEL BAW101S D ( IS=74.8n RS=0.288 BV=300 IBV=150n + CJO=700f M=0.333 N=2.41 TT=72.0n ) BAW101V*SRC=BAW101V;BAW101V;Diodes;Si; 325V 0.250A 50.0ns DIODES Switching Diode .MODEL BAW101V D ( IS=74.8n RS=0.288 BV=325 IBV=150n + CJO=700f M=0.333 N=2.41 TT=72.0n ) BAW156*SRC=BAW156;DI_BAW156;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode .MODEL DI_BAW156 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) BAW156T*SRC=BAW156T;DI_BAW156T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAW156T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) BAW56*SRC=BAW56;DI_BAW56;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) BAW567DW*SRC=BAW567DW;DI_BAW567DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW567DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) BAW56DW*SRC=BAW56DW;DI_BAW56DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) BAW56T*SRC=BAW56T;DI_BAW56T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAW56T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) BAW56W*SRC=BAW56W;DI_BAW56W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) BC807-16*SRC=BC807-16;DI_BC807-16;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-16 PNP (IS=50.7f NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=24.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=111n EG=1.12 ) BC807-16W*SRC=BC807-16W;DI_BC807-16W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-16W NPN (IS=49.9f NF=1.00 BF=342 VAF=121 + IKF=0.182 ISE=19.6p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=112n EG=1.12 BC807-25*SRC=BC807-25;DI_BC807-25;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-25 PNP (IS=50.7f NF=1.00 BF=547 VAF=121 + IKF=0.273 ISE=15.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=109n EG=1.12 ) BC807-25W*SRC=BC807-25W;DI_BC807-25W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-25W NPN (IS=49.9f NF=1.00 BF=547 VAF=121 + IKF=0.182 ISE=12.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=110n EG=1.12 ) BC807-40*SRC=BC807-40;DI_BC807-40;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-40 PNP (IS=50.7f NF=1.00 BF=821 VAF=121 + IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=108n EG=1.12 ) BC807-40W*SRC=BC807-40W;DI_BC807-40W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-40W NPN (IS=49.9f NF=1.00 BF=821 VAF=121 + IKF=0.182 ISE=8.17p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=109n EG=1.12 ) BC817-16*SRC=BC817-16;DI_BC817-16;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-16 NPN (IS=4.04n NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=111n EG=1.12 ) BC817-16W*SRC=BC807-16W;DI_BC807-16W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-16W NPN (IS=49.9f NF=1.00 BF=342 VAF=121 + IKF=0.182 ISE=19.6p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=112n EG=1.12 BC817-25*SRC=BC817-25;DI_BC817-25;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-25 NPN (IS=4.04n NF=1.00 BF=548 VAF=121 + IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=109n EG=1.12 ) BC817-25W*SRC=BC807-25W;DI_BC807-25W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-25W NPN (IS=49.9f NF=1.00 BF=547 VAF=121 + IKF=0.182 ISE=12.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=110n EG=1.12 ) BC817-40*SRC=BC817-40;DI_BC817-40;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-40 NPN (IS=4.04n NF=1.00 BF=822 VAF=121 + IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=108n EG=1.12 ) BC817-40W*SRC=BC807-40W;DI_BC807-40W;BJTs PNP; Si; 45.0V 0.500A 163MHz Diodes Inc. PNP BJT .MODEL DI_BC807-40W NPN (IS=49.9f NF=1.00 BF=821 VAF=121 + IKF=0.182 ISE=8.17p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.663 RB=2.65 RC=0.265 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 + MJC=0.300 TF=841p TR=109n EG=1.12 ) BC846A*SRC=BC846A;DI_BC846A;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846A NPN (IS=10.2f NF=1.00 BF=305 VAF=145 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=416p TR=50.3n EG=1.12 ) BC846AS*SRC=BC846AS;DI_BC846AS;BJTs NPN; Si; 65.0V 0.100A 250MHz Diodes Inc .MODEL DI_BC846AS PNP (IS=10.1f NF=1.00 BF=301 VAF=145 + IKF=54.7m ISE=5.50p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.705 RB=2.82 RC=0.282 + XTB=1.5 CJE=19.1p VJE=1.10 MJE=0.500 CJC=5.37p VJC=0.300 + MJC=0.300 TF=564p TR=98.4n EG=1.12 BC846AW*SRC=BC846AW;DI_BC846AW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846AW NPN (IS=10.2f NF=1.00 BF=305 VAF=145 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=416p TR=50.3n EG=1.12 ) BC846B*SRC=BC846B;DI_BC846B;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846B NPN (IS=10.2f NF=1.00 BF=650 VAF=145 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=385p TR=49.0n EG=1.12 ) BC846BLP4*DIODES_INC_SPICE_MODEL BC846BLP4 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=27Mar2013 *VERSION=1 .MODEL BC846BLP4 NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 + RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * BC846BW*SRC=BC846BW;DI_BC846BW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846BW NPN (IS=10.2f NF=1.00 BF=650 VAF=145 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=385p TR=49.0n EG=1.12 ) BC847A*SRC=BC847A;DI_BC847A;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847A NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) BC847AT*SRC=BC847AT;DI_BC847AT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847AT NPN (IS=9.98f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.75p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=50.3n EG=1.12 ) BC847AW*SRC=BC847AW;DI_BC847AW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847AW NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) BC847B*SRC=BC847B;DI_BC847B;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847B NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) BC847BFA*DIODES_INC_SPICE_MODEL BC847BFA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL BC847BFA NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * BC847BLP*SRC=BC847BLP;DI_BC847BLP;BJTs NPN; Si; 45.0V 0.100A 280MHz - .MODEL DI_BC847BLP NPN (IS=5.62f NF=1.00 BF=450 VAF=121 + IKF=70.3m ISE=191f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.120 RE=0.700 RB=2.80 RC=0.280 + XTB=1.5 CJE=14.6p VJE=1.10 MJE=0.500 CJC=6.93p VJC=0.300 + MJC=0.300 TF=541p TR=86.5n EG=1.12 ) BC847BLP4*SRC=BC847BLP4;DI_BC847BLP4;BJTs NPN; Si; 45.0V 0.100A 450MHz .MODEL DI_BC847BLP4 NPN (IS=2.31f NF=1.00 BF=425 VAF=121 + IKF=58.6m ISE=3.67f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.700 RB=2.80 RC=0.280 + XTB=1.5 CJE=14.9p VJE=1.10 MJE=0.500 CJC=6.07p VJC=0.300 + MJC=0.300 TF=294p TR=53.9n EG=1.12 ) BC847BS*SRC=BC847BS;DI_BC847BS;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC847BS NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300 + TF=585p TR=49.1n EG=1.12 ) BC847BT*SRC=BC847BT;DI_BC847BT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847BT NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=49.1n EG=1.12 ) BC847BVC*SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) BC847C*SRC=BC847C;DI_BC847C;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847C NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) BC847CDLP*SRC=BC847CDLP;DI_BC847CDLP;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc .MODEL DI_BC847CDLP NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.490 RB=1.96 RC=0.196 + XTB=1.5 CJE=13.4p VJE=1.10 MJE=0.500 CJC=5.92p VJC=0.300 + MJC=0.300 TF=481p TR=79.2n EG=1.12 ) BC847CT*SRC=BC847CT;DI_BC847CT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CT NPN (IS=9.98f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.58p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=48.6n EG=1.12 ) BC847CW*SRC=BC847CW;DI_BC847CW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) BC848A*SRC=BC848A;DI_BC848A;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848A NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) BC848AW*SRC=BC848AW;DI_BC848AW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848AW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) BC848B*SRC=BC848B;DI_BC848B;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848B NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) BC848BW*SRC=BC848BW;DI_BC848BW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848BW NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) BC848C*SRC=BC848C;DI_BC848C;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) BC848CW*SRC=BC848CW;DI_BC848CW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) BC856A*SRC=BC856A;DI_BC856A;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC856A PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) BC856AS*SRC=BC856AS;DI_BC856AS;BJTs PNP; Si; 65.0V 0.100A 400MHz Diodes Inc .MODEL DI_BC856AS PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=60.7m ISE=5.11p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.735 RB=2.94 RC=0.294 + XTB=1.5 CJE=21.1p VJE=1.10 MJE=0.500 CJC=7.67p VJC=0.300 + MJC=0.300 TF=314p TR=61.2n EG=1.12 ) BC856AW*SRC=BC856AW;DI_BC856AW;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC856AW PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) BC856B*DIODES_INC_SPICE_MODEL BC856B *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21May2012 *VERSION=1 .MODEL BC856B PNP IS=15E-15 NF=1 BF=360 ISE=100E-18 NE=1.05 + BR=2 ISC=1.8E-14 NC=1.05 NR=1 CJC=8.26E-12 MJC=0.33 VJC=0.48 + CJE=14.6E-12 MJE=0.37 VJE=0.75 RC=.313 RE=.782 RB=3.5 VAF=20 IKF=130m XTB=1.4 NK=.7 QUASIMOD=1 RCO=1 EG=1.11 .SIMULATOR DEFAULT BC856BW*SRC=BC856BW;DI_BC856BW;BJTs PNP; Si; 80.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_BC856BW PNP (IS=3.90f NF=1.00 BF=408 VAF=161 + IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=548p TR=94.5n EG=1.12 ) BC857A*SRC=BC857A;DI_BC857A;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857A PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) BC857AT*SRC=BC857AT;DI_BC857AT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857AT PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=488p TR=97.8n EG=1.12 ) BC857AW*SRC=BC857AW;DI_BC857AW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857AW PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) BC857B*SRC=BC857B;DI_BC857B;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) BC857BFA*DIODES_INC_SPICE_MODEL BC857BFA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL BC857BFA PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * BC857BLP*SRC=BC857BLP;DI_BC857BLP;BJTs PNP; Si; 45.0V 0.100A 490MHz Diodes Inc. BJT .MODEL DI_BC857BLP PNP (IS=3.72f NF=1.00 BF=650 VAF=121 + IKF=54.7m ISE=1.54p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.135 RE=1.06 RB=4.26 RC=0.426 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=221p TR=49.1n EG=1.12 ) BC857BLP4*SRC=BC857BLP4;DI_BC857BLP4;BJTs PNP; Si; 45.0V 0.100A 220MHz .MODEL DI_BC857BLP4 PNP (IS=2.24f NF=1.00 BF=333 VAF=121 + IKF=98.0m ISE=4.59f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.14 RB=4.58 RC=0.458 + XTB=1.5 CJE=14.8p VJE=1.10 MJE=0.500 CJC=8.09p VJC=0.300 + MJC=0.300 TF=659p TR=111n EG=1.12 ) BC857BS*SRC=BC857BS;DI_BC857BS;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_BC857BS PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300 + TF=586p TR=95.9n EG=1.12 ) BC857BT*SRC=BC857BT;DI_BC857BT;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) BC857BV*SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) BC857BW*SRC=BC857BW;DI_BC857BW;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857BW PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) BC857C*SRC=BC857C;DI_BC857C;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) BC857CT*SRC=BC857CT;DI_BC857CT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857CT PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=526p TR=95.0n EG=1.12 ) BC857CW*SRC=BC857CW;DI_BC857CW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857CW PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) BC858A*SRC=BC858A;DIBC858A;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DIBC858A PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) BC858AW*SRC=BC858AW;DI_BC858AW;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858AW PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) BC858B*SRC=BC858B;DI_BC858B;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858B PNP (IS=10.2f NF=1.00 BF=650 VAF=98.6 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=586p TR=95.9n EG=1.12 ) BC858BW*SRC=BC858BW;DI_BC858BW;BJTs PNP; Si; 30.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC858BW PNP (IS=5.51f NF=1.00 BF=424 VAF=98.6 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) BC858C*SRC=BC858C;DI_BC858C;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) BCP5516*DIODES_INC_SPICE_MODEL BCP5516 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=24-APR-2013 *VERSION=1 .MODEL BCP5516 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL BCP56*ZETEX BCP56 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCP56 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * BCP5610*ZETEX BCP5610 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCP5610 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * BCP5616*ZETEX BCP5616 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCP5616 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * BCW66H*ZETEX BCW68H Spice Model v1.0 Last Revised 8/8/05 * .MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20 +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * BCW68H.MODEL BCW68H PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 VAF=20 +ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 BCX5316* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=1 * .MODEL BCX5316 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ BCX5516*DIODES_INC_SPICE_MODEL BCX5516 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=24-APR-2013 *VERSION=1 .MODEL BCX5516 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL BCX56*ZETEX BCX56 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCX56 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * BCX5610*ZETEX BCX5610 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCX5610 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * BCX5616*ZETEX BCX5616 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BCX5616 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * BCX6825*ZETEX BCX6825 Spice Model v1.0 Last Revised 11/11/04 * .MODEL BCX6825 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * BS107P* *Zetex BS170P Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT BS170P 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS BS170P BS250P*ZETEX BS250P Spice Model v1.0 Last Revised 19/3/03 * .SUBCKT BS250P 3 4 5 * D G S M1 3 2 5 5 MBS250 RG 4 2 160 RL 3 5 1.2E8 C1 2 5 47E-12 C2 3 2 10E-12 D1 3 5 DBS250 * .MODEL MBS250 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DBS250 D IS=2E-13 RS=0.309 .ENDS BS250P * *$ * BS870*SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms Diodes Inc. MOSFET .MODEL DI_BS870 NMOS( LEVEL=1 VTO=2.00 KP=32.0m GAMMA=2.48 + PHI=.75 LAMBDA=86.8u RD=0.490 RS=0.490 + IS=125f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- BSN20*---------- BSN20 Spice Model ---------- .SUBCKT BSN20 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSN20 Spice Model v1.0 Last Revised 2012/8/22 BSP75G* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=12/11/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT BSP75G 1 2 3 M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 18 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 12 1.7E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2300 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 C1 4 33 200E-12 C2 4 1 60E-12 C3 35 33 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 * *Distributed Thermal Model for device mounted on minimum copper Rth=208°C/W *To enable thermal feedback for transient analysis change **G1 to G1 V1 1 41 0 **G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E4 19 3 22 29 0.201 *Junction temperature at node 20 is 1V/°C *Ambient temperature set V2 at 1V per 1°C * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150 + CGDO=5E-7 CGSO=5E-7) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=3.9E3 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ BSP75N*ZETEX BSP75N Spice Model v1.0 Last revision 22/02/07 * .SUBCKT BSP75 1 2 3 *------connections-------D-G-S * M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 18 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 12 1.7E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2300 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 C1 4 33 200E-12 C2 4 1 60E-12 C3 35 33 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 * * *Distributed Thermal Model - minimum copper Rth=208 and infin;C/W *To enable thermal feedback change *G1 to G1 V1 1 41 0 *G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E4 19 3 22 29 0.201 *Junction temperature node 20 at 1V=1 and infin;C *Ambient temperature set V2 at 1V=1 and infin;C * * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150 CGDO=5E-7 CGSO=5E-7) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=700 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ * BSR33* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=1 * .MODEL BSR33 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ BSR43*ZETEX BSR43 Spice Model v2.0 Last Revised 24/2/05 * .MODEL BSR43 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * BSS123*ZETEX BSS123 Spice Model v1.0 Last Revision 27/3/06 * .SUBCKT BSS123/ZTX 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS BSS123 * *$ * BSS123W*SRC=BSS123W;DI_BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc. MOSFET .MODEL DI_BSS123W NMOS( LEVEL=1 VTO=1.40 KP=0.805 GAMMA=1.74 + PHI=.75 LAMBDA=41.8u RD=0.140 RS=0.140 + IS=85.0f PB=0.800 MJ=0.460 CBD=39.5p + CBS=47.4p CGSO=24.0n CGDO=20.0n CGBO=246n ) * -- Assumes default L=100U W=100U -- BSS127S*---------- BSS127S Spice Model ---------- .SUBCKT BSS127S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 84.22 RS 30 3 0.001 RG 20 2 29 CGS 2 3 1.958E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 3.419 + TOX = 6.8E-008 NSUB = 1E+016 KP = 0.127 U0 = 400 KAPPA = 1.044E-015 .MODEL DCGD D CJO = 1.137E-011 VJ = 0.9051 M = 0.89 .MODEL DSUB D IS = 2.294E-010 N = 1.601 RS = 0.1079 + BV = 690 CJO = 1.956E-011 VJ = 1.514 M = 0.8171 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS127S Spice Model v1.1 Last Revised 2014/8/5 BSS127SSN*---------- BSS127SSN Spice Model ---------- .SUBCKT BSS127SSN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 84.22 RS 30 3 0.001 RG 20 2 29 CGS 2 3 1.958E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 3.419 + TOX = 6.8E-008 NSUB = 1E+016 KP = 0.127 U0 = 400 KAPPA = 1.044E-015 .MODEL DCGD D CJO = 1.137E-011 VJ = 0.9051 M = 0.89 .MODEL DSUB D IS = 2.294E-010 N = 1.601 RS = 0.1079 BV = 690 + CJO = 1.956E-011 VJ = 1.514 M = 0.8171 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS127SSN Spice Model v1.1 Last Revised 2014/8/5 BSS138*ZETEX BSS138 Spice Model v2.0 Last Revised 5/4/07 * .SUBCKT BSS138/ZTX 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 20 RL 3 5 6E6 C1 2 5 30E-12 C2 3 2 1E-12 C3 7 5 58E-12 D1 5 3 Dmod1 D2 6 3 Dmod2 Egs1 2 6 2 5 1 Egs2 8 5 2 5 1 S1 2 7 3 2 SMOD1a S2 7 8 3 2 SMOD1b .MODEL MOD1 NMOS VTO=1 RS=1.58 RD=0.0 IS=1E-15 KP=0.395 +CBD=53.5E-12 PB=1 LAMBDA=267E-6 .MODEL Dmod1 D IS=1.254E-13 N=1.0207 RS=0.222 .MODEL Dmod2 D CJO=40E-12 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1 VOFF=-1 .ENDS * *$ * BSS138DW*---------- BSS138DW Spice Model ---------- .SUBCKT BSS138DW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138DW Spice Model v1.0 Last Revised 2012/8/22 BSS138W*---------- BSS138W Spice Model ---------- .SUBCKT BSS138W 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.9338 RS 30 3 0.001 RG 20 2 47 CGS 2 3 1.906E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 1.422 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5025 U0 = 400 KAPPA = 7.117 .MODEL DCGD D CJO = 9.463E-012 VJ = 6.446 M = 0.9816 .MODEL DSUB D IS = 7.582E-010 N = 1.586 RS = 0.1976 + BV = 65 CJO = 1.173E-011 VJ = 0.03727 M = 0.2868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS138W Spice Model v1.0 Last Revised 2012/8/22 BSS84*ZETEX BSS84 Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT BSS84 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 167 RL 3 5 50E6 C1 2 5 26P C2 3 2 4P D1 3 5 DIODE1 * .MODEL MOD1 PMOS VTO=-1.709 RS=3.091 RD=0.979 IS=1E-15 KP=0.146 +CBD=12P PB=1 .MODEL DIODE1 D IS=1.072E-13 RS=0.527 N=1.077 .ENDS BSS84 * *$ * BSS8402DW*SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_BSS84 PMOS( LEVEL=1 VTO=-1.60 KP=4.87m GAMMA=1.98 + PHI=.75 LAMBDA=1.25m RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=46.6p + CBS=55.9p CGSO=50.7n CGDO=42.2n CGBO=69.5n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. - .MODEL 2N7002 NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=39.9u RD=1.05 RS=1.05 + IS=57.5f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- BSS84DW*---------- BSS84DW Spice Model ---------- .SUBCKT BSS84DW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS84DW Spice Model v1.0 Last Revised 2012/4/17 BSS84V*---------- BSS84V Spice Model ---------- .SUBCKT BSS84V 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS84V Spice Model v1.0 Last Revised 2012/4/17 BSS84W*---------- BSS84W Spice Model ---------- .SUBCKT BSS84W 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes BSS84W Spice Model v1.0 Last Revised 2012/4/17 BST39* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JAN2011 *VERSION=1 * .MODEL BST39 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ BST52*ZETEX BST52 Spice Model v1.0 Last Revised 2/8/2004 * .SUBCKT BST52 1 2 3 * C B E Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 .ENDS BST52 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 * *$ * BZT52C10*SRC=BZT52C10;DI_BZT52C10;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.84 .MODEL DF D ( IS=20.6p RS=1.22 N=1.10 + CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) .ENDS BZT52C10LP*SRC=BZT52C9V1LP;DI_BZT52C9V1LP;Diodes;Zener <=10V; 9.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C9V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=11.3p RS=31.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.26f RS=3.45 N=2.23 ) .ENDS BZT52C10S*SRC=BZT52C10S;DI_BZT52C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C10S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ) BZT52C10T*SRC=BZT52C10T;DI_BZT52C10T;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.84 .MODEL DF D ( IS=20.6p RS=1.22 N=1.10 + CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) .ENDS BZT52C11*SRC=BZT52C11;DI_BZT52C11;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.83 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=4.60 N=2.97 BZT52C11LP*SRC=BZT52C11LP;DI_BZT52C11LP;Diodes;Zener 10V-50V; 11.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C11LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.77 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=4.60 N=2.97 ) .ENDS BZT52C11S*SRC=BZT52C11S;DI_BZT52C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C11S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ) BZT52C11T*SRC=BZT52C11T;DI_BZT52C11T;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.83 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=4.60 N=2.97 BZT52C12*SRC=BZT52C12;DI_BZT52C12;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=9.46 N=3.00 BZT52C12LP*SRC=BZT52C12LP;DI_BZT52C12LP;Diodes;Zener 10V-50V; 12.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C12LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.72 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=9.46 N=3.00 ) .ENDS BZT52C12S*SRC=BZT52C12S;DI_BZT52C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C12S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ) BZT52C12T*SRC=BZT52C12T;DI_BZT52C12T;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=9.46 N=3.00 BZT52C13*SRC=BZT52C13;DI_BZT52C13;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=15.8p RS=1.24 N=1.10 + CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) .ENDS BZT52C13LP*SRC=BZT52C13LP;DI_BZT52C13LP;Diodes;Zener 10V-50V; 13.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C13LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=7.92p RS=30.3 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.58f RS=14.5 N=3.00 ) .ENDS BZT52C13S*SRC=BZT52C13S;DI_BZT52C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C13S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ) BZT52C13T*SRC=BZT52C13T;DI_BZT52C13T;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=15.8p RS=1.24 N=1.10 + CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) .ENDS BZT52C15*SRC=BZT52C15;DI_BZT52C15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=14.5 N=3.00 BZT52C15LP*SRC=BZT52C15LP;DI_BZT52C15LP;Diodes;Zener 10V-50V; 15.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C15LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=14.5 N=3.00 ) .ENDS BZT52C15S*SRC=BZT52C15S;DI_BZT52C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ) BZT52C15T*SRC=BZT52C15T;DI_BZT52C15T;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=14.5 N=3.00 BZT52C16*SRC=BZT52C16;DI_BZT52C16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=24.5 N=3.00 BZT52C16LP*SRC=BZT52C16LP;DI_BZT52C16LP;Diodes;Zener 10V-50V; 16.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C16LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=6.44p RS=29.7 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.29f RS=24.5 N=3.00 ) .ENDS BZT52C16S*SRC=BZT52C16S;DI_BZT52C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ) BZT52C16T*SRC=BZT52C16T;DI_BZT52C16T;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=24.5 N=3.00 BZT52C18*SRC=BZT52C18;DI_BZT52C18;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=29.5 N=3.00 BZT52C18LP*SRC=BZT52C18LP;DI_BZT52C18LP;Diodes;Zener 10V-50V; 18.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C18LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=29.5 N=3.00 ) .ENDS BZT52C18S********************************************************************************************************************************** *SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C18S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=25.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) .ENDS ********************************************************************************************************************************* BZT52C18T*SRC=BZT52C18T;DI_BZT52C18T;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=29.5 N=3.00 BZT52C20*SRC=BZT52C20;DI_BZT52C20;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=39.5 N=3.00 BZT52C20LP* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/04/2014 *VERSION=1 .model BZT52C20LP D(IS=.0002n RS=0.01 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=20 IBV=10u TT=40n EG=1.2 TRS1=.01m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT BZT52C20S*SRC=BZT52C20S;DI_BZT52C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C20S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) BZT52C20T*SRC=BZT52C20T;DI_BZT52C20T;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=39.5 N=3.00 BZT52C22*SRC=BZT52C22;DI_BZT52C22;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=39.5 N=3.00 BZT52C22LP*SRC=BZT52C22LP;DI_BZT52C22LP;Diodes;Zener 10V-50V; 22.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C22LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=4.68p RS=28.8 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.36e-016 RS=39.5 N=3.00 ) .ENDS BZT52C22S*SRC=BZT52C22S;DI_BZT52C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C22S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ) BZT52C22T*SRC=BZT52C22T;DI_BZT52C22T;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=39.5 N=3.00 BZT52C24*SRC=BZT52C24;DI_BZT52C24;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=54.5 N=3.00 BZT52C24LP*SRC=BZT52C24LP;DI_BZT52C24LP;Diodes;Zener 10V-50V; 24.0V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C24LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=4.29p RS=28.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.58e-016 RS=54.5 N=3.00 ) .ENDS BZT52C24S*SRC=BZT52C24S;DI_BZT52C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C24S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ) BZT52C24T*SRC=BZT52C24T;DI_BZT52C24T;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=54.5 N=3.00 BZT52C27*SRC=BZT52C27;DI_BZT52C27;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=41.1 N=3.00 BZT52C27S*SRC=BZT52C27S;DI_BZT52C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C27S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ) BZT52C2V0* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=16/04/2014 *VERSION=1 *Comments:zener break down is modelled only at 25°c .SUBCKT BZT52C2V0 1 2 D1 1 2 DF D2 2 1 DR .model DF D(IS=.00015n RS=0.055 CJO=500p M=0.5 VJ=0.4 N=1.1 IKF=200m TT=40n EG=1.05 TRS1=.01m) .model DR D(IS=.6n RS=15 N=3 IKF=.72u T_ABS=25) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT BZT52C2V0S*SRC=BZT52C2V0S;DI_BZT52C2V0S;Diodes;Zener <=10V; 2.00V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=503p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=84.5 N=3.00 ) BZT52C2V0T*SRC=BZT52C2V0T;DI_BZT52C2V0T;Diodes;Zener <=10V; 2.00V 0.15W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=103p RS=37.6 N=1.10 + CJO=516p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=20.6f RS=84.5 N=3.00 BZT52C2V4*SRC=BZT52C2V4;DI_BZT52C2V4;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V4 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=84.5 N=3.00 ) .ENDS BZT52C2V4LP*SRC=BZT52C2V4LP;BZT52C2V4LP;Diodes;Zener <=10V; 2.40V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C2V4LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=42.9p RS=35.1 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.58f RS=84.5 N=3.00 ) .ENDS BZT52C2V4S*SRC=BZT52C2V4S;DI_BZT52C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V4S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=460p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ) BZT52C2V4T*SRC=BZT52C2V4T;DI_BZT52C2V4T;Diodes;Zener <=10V; 2.40V 0.15W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V4T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=84.5 N=3.00 ) .ENDS BZT52C2V7*SRC=BZT52C2V7;DI_BZT52C2V7;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.217 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=84.5 N=3.00 ) .ENDS BZT52C2V7LP*SRC=BZT52C2V7LP;BZT52C2V7LP;Diodes;Zener <=10V; 2.70V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C2V7LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.164 .MODEL DF D ( IS=38.1p RS=34.8 N=1.10 + CJO=152p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.63f RS=84.5 N=3.00 ) .ENDS BZT52C2V7S*SRC=BZT52C2V7S;DI_BZT52C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=410p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ) BZT52C2V7T*SRC=BZT52C2V7T;DI_BZT52C2V7T;Diodes;Zener <=10V; 2.70V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C2V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.217 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=84.5 N=3.00 ) .ENDS BZT52C30*SRC=BZT52C30;DI_BZT52C30;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=41.1 N=3.00 BZT52C30S*SRC=BZT52C30S;DI_BZT52C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C30S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ) BZT52C33*SRC=BZT52C33;DI_BZT52C33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=41.1 N=3.00 BZT52C33S*SRC=BZT52C33S;DI_BZT52C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ) BZT52C36*SRC=BZT52C36;DI_BZT52C36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=5.72p RS=1.27 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=51.1 N=3.00 ) .ENDS BZT52C36LP*SRC=BZT52C36LP;BZT52C36LP;Diodes;Zener 10V-50V; 36.0V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C36LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=2.86p RS=27.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.72e-016 RS=51.1 N=3.00 ) .ENDS BZT52C36S*SRC=BZT52C36S;DI_BZT52C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=17.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=41.1 N=3.00 ) BZT52C39*SRC=BZT52C39;DI_BZT52C39;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C39  1 2 *        Terminals    A   K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=91.1 N=3.00 )                                               .ENDS BZT52C39LP*SRC=BZT52C39LP;BZT52C39LP;Diodes;Zener 10V-50V; 39.0V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C39LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=2.64p RS=27.2 N=1.10 + CJO=24.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.28e-016 RS=91.1 N=3.00 ) .ENDS BZT52C39S*SRC=BZT52C39S;DI_BZT52C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C39S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ) BZT52C3V0*SRC=BZT52C3V0;DI_BZT52C3V0;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.534 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=79.5 N=3.00 ) .ENDS BZT52C3V0LP*SRC=BZT52C3V0LP;BZT52C3V0LP;Diodes;Zener <=10V; 3.00V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V0LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.480 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=144p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=79.5 N=3.00 ) .ENDS BZT52C3V0S*SRC=BZT52C3V0S;DI_BZT52C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C3V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ) BZT52C3V0T*SRC=BZT52C3V0T;DI_BZT52C3V0T;Diodes;Zener <=10V; 3.00V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.534 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=79.5 N=3.00 ) .ENDS BZT52C3V3*SRC=BZT52C3V3;DI_BZT52C3V3;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.827 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=79.5 N=3.00 BZT52C3V3LP*SRC=BZT52C3V3LP;BZT52C3V3LP;Diodes;Zener <=10V; 3.30V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V3LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.773 .MODEL DF D ( IS=31.2p RS=34.2 N=1.10 + CJO=136p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.24f RS=79.5 N=3.00 ) .ENDS BZT52C3V3S*SRC=BZT52C3V3S;DI_BZT52C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ) BZT52C3V3T*SRC=BZT52C3V3T;DI_BZT52C3V3T;Diodes;Zener <=10V; 3.30V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.827 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=79.5 N=3.00 BZT52C3V6*SRC=BZT52C3V6;DI_BZT52C3V6;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.15 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=74.5 N=3.00 BZT52C3V6LP*SRC=BZT52C3V6LP;BZT52C3V6LP;Diodes;Zener <=10V; 3.60V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V6LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.09 .MODEL DF D ( IS=28.6p RS=34.0 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.72f RS=74.5 N=3.00 ) .ENDS BZT52C3V6S*SRC=BZT52C3V6S;DI_BZT52C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ) BZT52C3V6T*SRC=BZT52C3V6T;DI_BZT52C3V6T;Diodes;Zener <=10V; 3.60V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.15 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=74.5 N=3.00 BZT52C3V9*SRC=BZT52C3V9;DI_BZT52C3V9;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.44 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=74.5 N=3.00 BZT52C3V9LP*SRC=BZT52C3V9LP;BZT52C3V9LP;Diodes;Zener <=10V; 3.90V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C3V9LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.39 .MODEL DF D ( IS=26.4p RS=33.7 N=1.10 + CJO=122p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.28f RS=74.5 N=3.00 ) .END BZT52C3V9S******************************************************************************************************************************** *SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V9S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ) .ENDS ******************************************************************************************************************************** BZT52C3V9T*SRC=BZT52C3V9T;DI_BZT52C3V9T;Diodes;Zener <=10V; 3.90V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V9T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.44 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=74.5 N=3.00 BZT52C43*SRC=BZT52C43;DI_BZT52C43;Diodes;Zener 10V-50V; 43.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=3.93p RS=1.51 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.86e-016 RS=84.5 N=3.00 ) .ENDS BZT52C47*SRC=BZT52C47;DI_BZT52C47;Diodes;Zener 10V-50V; 47.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=3.59p RS=1.48 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.19e-016 RS=84.5 N=3.00 ) .ENDS BZT52C4V3*SRC=BZT52C4V3;DI_BZT52C4V3;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.83 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=74.5 N=3.00 BZT52C4V3LP*SRC=BZT52C4V3LP;BZT52C4V3LP;Diodes;Zener <=10V; 4.30V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT BZT52C4V3LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.78 .MODEL DF D ( IS=24.0p RS=33.4 N=1.10 + CJO=111p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.79f RS=74.5 N=3.00 ) .ENDS BZT52C4V3S*SRC=BZT52C4V3S;DI_BZT52C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C4V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ) BZT52C4V3T*SRC=BZT52C4V3T;DI_BZT52C4V3T;Diodes;Zener <=10V; 4.30V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.83 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=74.5 N=3.00 BZT52C4V7*SRC=BZT52C4V7;DI_BZT52C4V7;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.27 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=64.5 N=3.00 BZT52C4V7LP*SRC=PD3Z284C4V7;PD3Z284C4V7;Diodes;Zener <=10V; 4.70V 0.250W DIODES ZENER DIODE *SYM=HZEN .SUBCKT PD3Z284C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.22 .MODEL DF D ( IS=21.9p RS=9.72 N=1.10 + CJO=103p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.38f RS=64.5 N=3.00 ) .ENDS BZT52C4V7S*SRC=BZT52C4V7S;DI_BZT52C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C4V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ) BZT52C4V7T*SRC=BZT52C4V7T;DI_BZT52C4V7T;Diodes;Zener <=10V; 4.70V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.27 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=64.5 N=3.00 BZT52C51*SRC=BZT52C51;DI_BZT52C51;Diodes;Zener >50V; 51.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.3 .MODEL DF D ( IS=3.31p RS=1.45 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.62e-016 RS=84.5 N=3.00 ) .ENDS BZT52C51S*SRC=BZT52C51S;DI_BZT52C51S;Diodes;Zener >50V; 51.0V 0.200W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C51S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.2 .MODEL DF D ( IS=1.62p RS=25.8 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23e-016 RS=84.5 N=3.00 ) BZT52C5V1*SRC=BZT52C5V1;DI_BZT52C5V1;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.77 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=44.5 N=3.00 BZT52C5V1LP*SRC=BZT52C5V1LP;DI_BZT52C5V1LP;Diodes;Zener <=10V; 5.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C5V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.71 .MODEL DF D ( IS=20.2p RS=33.0 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.04f RS=44.5 N=3.00 ) .ENDS BZT52C5V1S*SRC=BZT52C5V1S;DI_BZT52C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C5V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ) BZT52C5V1T*SRC=BZT52C5V1T;DI_BZT52C5V1T;Diodes;Zener <=10V; 5.10V 0.15W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.77 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=44.5 N=3.00 BZT52C5V6*SRC=BZT52C5V6;DI_BZT52C5V6;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.36 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=24.5 N=3.00 BZT52C5V6LP*SRC=BZT52C5V6LP;DI_BZT52C5V6LP;Diodes;Zener <=10V; 5.60V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C5V6LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.31 .MODEL DF D ( IS=18.4p RS=32.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.68f RS=24.5 N=3.00 ) .ENDS BZT52C5V6S*SRC=BZT52C5V6S;DI_BZT52C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C5V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) BZT52C5V6T*SRC=BZT52C5V6T;DI_BZT52C5V6T;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.36 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=24.5 N=3.00 BZT52C6V2*SRC=BZT52C6V2;DI_BZT52C6V2;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=2.30 N=1.49 BZT52C6V2LP* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=1/04/2014 *VERSION=1 .model BZT52C6V2LP D(IS=.0002n RS=0.01 CJO=1000p M=0.5 VJ=0.4 N=1.2 IKF=30m ISR=.0002u BV=6 IBV=10u TT=40n EG=1.2 TRS1=.01m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT BZT52C6V2S*SRC=BZT52C6V2S;DI_BZT52C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C6V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ) BZT52C6V2T*SRC=BZT52C6V2T;DI_BZT52C6V2T;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=2.30 N=1.49 BZT52C6V8*SRC=BZT52C6V8;DI_BZT52C6V8;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23 BZT52C6V8LP*SRC=BZT52C6V8LP;DI_BZT52C6V8LP;Diodes;Zener <=10V; 6.80V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C6V8LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.16 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=66.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.03f RS=3.45 N=2.23 ) .ENDS BZT52C6V8S*SRC=BZT52C6V8S;DI_BZT52C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C6V8S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) BZT52C6V8T*SRC=BZT52C6V8T;DI_BZT52C6V8T;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23 BZT52C7V5*SRC=BZT52C7V5;DI_BZT52C7V5;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.89 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=2.23 BZT52C7V5LP*SRC=BZT52C7V5LP;DI_BZT52C7V5LP;Diodes;Zener <=10V; 7.50V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C7V5LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.85 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=55.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.45 N=2.23 ) .ENDS BZT52C7V5S*SRC=BZT52C7V5S;DI_BZT52C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C7V5S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ) BZT52C7V5T*SRC=BZT52C7V5T;DI_BZT52C7V5T;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.89 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=2.23 BZT52C8V2*SRC=BZT52C8V2;DI_BZT52C8V2;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.59 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=38.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.45 N=2.23 ) .ENDS BZT52C8V2LP*SRC=BZT52C8V2LP;DI_BZT52C8V2LP;Diodes;Zener <=10V; 8.20V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C8V2LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.55 .MODEL DF D ( IS=12.6p RS=31.6 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.51f RS=3.45 N=2.23 ) .ENDS BZT52C8V2S*SRC=BZT52C8V2S;DI_BZT52C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C8V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ) BZT52C8V2T*SRC=BZT52C8V2T;DI_BZT52C8V2T;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.59 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=38.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.45 N=2.23 ) .ENDS BZT52C9V1*SRC=BZT52C9V1;DI_BZT52C9V1;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.48 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=35.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=3.45 N=2.23 ) .ENDS BZT52C9V1LP*SRC=BZT52C9V1LP;DI_BZT52C9V1LP;Diodes;Zener <=10V; 9.10V 0.250W Diodes Inc. QFN Zener *SYM=HZEN .SUBCKT DI_BZT52C9V1LP 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=11.3p RS=31.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.26f RS=3.45 N=2.23 ) .ENDS BZT52C9V1S*SRC=BZT52C9V1S;DI_BZT52C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C9V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ) BZT52C9V1T*SRC=BZT52C9V1T;DI_BZT52C9V1T;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.48 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=35.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=3.45 N=2.23 ) .ENDS BZX84C10*SRC=BZX84C10;DI_BZX84C10;Diodes;Zener <=10V; 10.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.81 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=4.60 N=2.97 ) .ENDS BZX84C10S*SRC=BZX84C10S;DI_BZX84C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C10S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ) BZX84C10T*SRC=BZX84C10T;DI_BZX84C10T;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C10T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.74 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=4.60 N=2.97 ) BZX84C10TS*SRC=BZX84C10TS;DI_BZX84C10TS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C10TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ) BZX84C10W*SRC=BZX84C10W;DI_BZX84C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C10W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.60 N=2.97 ) BZX84C11*SRC=BZX84C11;DI_BZX84C11;Diodes;Zener 10V-50V; 11.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=4.60 N=2.97 ) .ENDS BZX84C11S*SRC=BZX84C11S;DI_BZX84C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C11S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ) BZX84C11T*SRC=BZX84C11T;DI_BZX84C11T;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C11T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.74 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=4.60 N=2.97 ) BZX84C11TS*SRC=BZX84C11TS;DI_BZX84C11TS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C11TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ) BZX84C11W*SRC=BZX84C11W;DI_BZX84C11W;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C11W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=4.60 N=2.97 ) BZX84C12*SRC=BZX84C12;DI_BZX84C12;Diodes;Zener 10V-50V; 12.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=9.46 N=3.00 ) .ENDS BZX84C12S*SRC=BZX84C12S;DI_BZX84C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C12S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ) BZX84C12T*SRC=BZX84C12T;DI_BZX84C12T;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C12T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.68 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=9.46 N=3.00 ) BZX84C12TS*SRC=BZX84C12TS;DI_BZX84C12TS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C12TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ) BZX84C12W*SRC=BZX84C12W;DI_BZX84C12W;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C12W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ) BZX84C13*SRC=BZX84C13;DI_BZX84C13;Diodes;Zener 10V-50V; 13.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=14.5 N=3.00 ) .ENDS BZX84C13S*SRC=BZX84C13S;DI_BZX84C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C13S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ) BZX84C13T*SRC=BZX84C13T;DI_BZX84C13T;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C13T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=14.5 N=3.00 ) BZX84C13TS*SRC=BZX84C13TS;DI_BZX84C13TS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C13TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ) BZX84C13W*SRC=BZX84C13W;DI_BZX84C13W;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C13W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=14.5 N=3.00 ) BZX84C15*SRC=BZX84C15;DI_BZX84C15;Diodes;Zener 10V-50V; 15.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=14.5 N=3.00 ) .ENDS BZX84C15S*SRC=BZX84C15S;DI_BZX84C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ) BZX84C15T*SRC=BZX84C15T;DI_BZX84C15T;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C15T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=14.5 N=3.00 ) BZX84C15TS*SRC=BZX84C15TS;DI_BZX84C15TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C15TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ) BZX84C15W*SRC=BZX84C15W;DI_BZX84C15W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C15W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ) BZX84C16*SRC=BZX84C16;DI_BZX84C16;Diodes;Zener 10V-50V; 16.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=24.5 N=3.00 ) .ENDS BZX84C16S*SRC=BZX84C16S;DI_BZX84C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ) BZX84C16T*SRC=BZX84C16T;DI_BZX84C16T;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C16T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=24.5 N=3.00 ) BZX84C16TS*SRC=BZX84C16TS;DI_BZX84C16TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C16TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ) BZX84C16W*SRC=BZX84C16W;DI_BZX84C16W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C16W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=24.5 N=3.00 ) BZX84C18*SRC=BZX84C18;DI_BZX84C18;Diodes;Zener 10V-50V; 18.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=29.5 N=3.00 ) .ENDS BZX84C18S*SRC=BZX84C18S;DI_BZX84C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C18S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) BZX84C18T*SRC=BZX84C18T;DI_BZX84C18T;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C18T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=29.5 N=3.00 ) BZX84C18TS*SRC=BZX84C18TS;DI_BZX84C18TS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C18TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) BZX84C18W*SRC=BZX84C18W;DI_BZX84C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C18W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) BZX84C20*SRC=BZX84C20;DI_BZX84C20;Diodes;Zener 10V-50V; 20.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=39.5 N=3.00 ) .ENDS BZX84C20S*SRC=BZX84C20S;DI_BZX84C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C20S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) BZX84C20T*SRC=BZX84C20T;DI_BZX84C20T;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C20T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=39.5 N=3.00 ) BZX84C20TS*SRC=BZX84C20TS;DI_BZX84C20TS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C20TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) BZX84C20W*SRC=BZX84C20W;DI_BZX84C20W;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C20W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) BZX84C22*SRC=BZX84C22;DI_BZX84C22;Diodes;Zener 10V-50V; 22.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=39.5 N=3.00 ) .ENDS BZX84C22S*SRC=BZX84C22S;DI_BZX84C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C22S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ) BZX84C22T*SRC=BZX84C22T;DI_BZX84C22T;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C22T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=39.5 N=3.00 ) BZX84C22TS*SRC=BZX84C22TS;DI_BZX84C22TS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C22TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ) BZX84C22W*SRC=BZX84C22W;DI_BZX84C22W;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C22W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=39.5 N=3.00 ) BZX84C24*SRC=BZX84C24;DI_BZX84C24;Diodes;Zener 10V-50V; 24.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=54.5 N=3.00 ) .ENDS BZX84C24S*SRC=BZX84C24S;DI_BZX84C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C24S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ) BZX84C24T*SRC=BZX84C24T;DI_BZX84C24T;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C24T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=54.5 N=3.00 ) BZX84C24TS*SRC=BZX84C24TS;DI_BZX84C24TS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C24TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ) BZX84C24W*SRC=BZX84C24W;DI_BZX84C24W;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C24W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=54.5 N=3.00 ) BZX84C27*SRC=BZX84C27;DI_BZX84C27;Diodes;Zener 10V-50V; 27.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=64.5 N=3.00 ) .ENDS BZX84C27S*SRC=BZX84C27S;DI_BZX84C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C27S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ) BZX84C27T*SRC=BZX84C27T;DI_BZX84C27T;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C27T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=41.1 N=3.00 ) BZX84C27TS*SRC=BZX84C27TS;DI_BZX84C27TS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C27TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ) BZX84C27W*SRC=BZX84C27W;DI_BZX84C27W;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C27W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 ) BZX84C2V4*SRC=BZX84C2V4;DI_BZX84C2V4;Diodes;Zener <=10V; 2.40V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C2V4 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=60.1p RS=36.1 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.0f RS=84.5 N=3.00 ) .ENDS BZX84C2V4S*SRC=BZX84C2V4S;DI_BZX84C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V4S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ) BZX84C2V4T*SRC=BZX84C2V4T;DI_BZX84C2V4T;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V4T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=84.5 N=3.00 ) BZX84C2V4TS*SRC=BZX84C2V4TS;DI_BZX84C2V4TS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V4TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ) BZX84C2V4W*SRC=BZX84C2V4W;DI_BZX84C2V4W;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V4W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=84.5 N=3.00 ) BZX84C2V7*SRC=BZX84C2V7;DI_BZX84C2V7;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.190 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=84.5 N=3.00 ) .ENDS BZX84C2V7S*SRC=BZX84C2V7S;DI_BZX84C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ) BZX84C2V7T*SRC=BZX84C2V7T;DI_BZX84C2V7T;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.124 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=84.5 N=3.00 ) BZX84C2V7TS*SRC=BZX84C2V7TS;DI_BZX84C2V7TS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V7TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ) BZX84C2V7W*SRC=BZX84C2V7W;DI_BZX84C2V7W;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V7W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=84.5 N=3.00 ) BZX84C30*SRC=BZX84C30;DI_BZX84C30;Diodes;Zener 10V-50V; 30.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 ) .ENDS BZX84C30S*SRC=BZX84C30S;DI_BZX84C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C30S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ) BZX84C30T*SRC=BZX84C30T;DI_BZX84C30T;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C30T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=41.1 N=3.00 ) BZX84C30TS*SRC=BZX84C30TS;DI_BZX84C30TS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C30TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ) BZX84C30W*SRC=BZX84C30W;DI_BZX84C30W;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C30W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=41.1 N=3.00 ) BZX84C33*SRC=BZX84C33;DI_BZX84C33;Diodes;Zener 10V-50V; 33.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 ) .ENDS BZX84C33S*SRC=BZX84C33S;DI_BZX84C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ) BZX84C33T*SRC=BZX84C33T;DI_BZX84C33T;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C33T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=41.1 N=3.00 ) BZX84C33TS*SRC=BZX84C33TS;DI_BZX84C33TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C33TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ) BZX84C33W*SRC=BZX84C33W;DI_BZX84C33W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C33W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 ) BZX84C36*SRC=BZX84C36;DI_BZX84C36;Diodes;Zener 10V-50V; 36.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 ) .ENDS BZX84C36S*SRC=BZX84C36S;DI_BZX84C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ) BZX84C36T*SRC=BZX84C36T;DI_BZX84C36T;Diodes;Zener >50V; 536V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C36T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 533 .MODEL DF D ( IS=115f RS=18.2 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.31e-017 RS=51.1 N=3.00 ) BZX84C36TS*SRC=BZX84C36TS;DI_BZX84C36TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C36TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ) BZX84C36W*SRC=BZX84C36W;DI_BZX84C36W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C36W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=51.1 N=3.00 ) BZX84C39*SRC=BZX84C39;DI_BZX84C39;Diodes;Zener 10V-50V; 39.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 ) .ENDS BZX84C39S*SRC=BZX84C39S;DI_BZX84C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C39S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ) BZX84C39T*SRC=BZX84C39T;DI_BZX84C39T;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C39T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=91.1 N=3.00 ) BZX84C39TS*SRC=BZX84C39TS;DI_BZX84C39TS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C39TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ) BZX84C39W*SRC=BZX84C39W;DI_BZX84C39W;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C39W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=91.1 N=3.00 ) BZX84C3V0*SRC=BZX84C3V0;DI_BZX84C3V0;Diodes;Zener <=10V; 3.00V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.507 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61f RS=79.5 N=3.00 ) .ENDS BZX84C3V0S*SRC=BZX84C3V0S;DI_BZX84C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ) BZX84C3V0T*SRC=BZX84C3V0T;DI_BZX84C3V0T;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.441 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=79.5 N=3.00 ) BZX84C3V0TS*SRC=BZX84C3V0TS;DI_BZX84C3V0TS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V0TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ) BZX84C3V0W*SRC=BZX84C3V0W;DI_BZX84C3V0W;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V0W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=79.5 N=3.00 ) BZX84C3V3*SRC=BZX84C3V3;DI_BZX84C3V3;Diodes;Zener <=10V; 3.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.799 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74f RS=79.5 N=3.00 ) .ENDS BZX84C3V3S*SRC=BZX84C3V3S;DI_BZX84C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ) BZX84C3V3T*SRC=BZX84C3V3T;DI_BZX84C3V3T;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.733 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=79.5 N=3.00 ) BZX84C3V3TS*SRC=BZX84C3V3TS;DI_BZX84C3V3TS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V3TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ) BZX84C3V3W*SRC=BZX84C3V3W;DI_BZX84C3V3W;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V3W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=79.5 N=3.00 ) BZX84C3V6*SRC=BZX84C3V6;DI_BZX84C3V6;Diodes;Zener <=10V; 3.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.12 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01f RS=74.5 N=3.00 ) .ENDS BZX84C3V6S*SRC=BZX84C3V6S;DI_BZX84C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ) BZX84C3V6T*SRC=BZX84C3V6T;DI_BZX84C3V6T;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.05 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=74.5 N=3.00 ) BZX84C3V6TS*SRC=BZX84C3V6TS;DI_BZX84C3V6TS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V6TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ) BZX84C3V6W*SRC=BZX84C3V6W;DI_BZX84C3V6W;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=74.5 N=3.00 ) BZX84C3V9*SRC=BZX84C3V9;DI_BZX84C3V9;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.41 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=74.5 N=3.00 ) .ENDS BZX84C3V9S*SRC=BZX84C3V9S;DI_BZX84C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V9S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ) BZX84C3V9T*SRC=BZX84C3V9T;DI_BZX84C3V9T;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V9T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.35 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=74.5 N=3.00 ) BZX84C3V9TS*SRC=BZX84C3V9TS;DI_BZX84C3V9TS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V9TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ) BZX84C3V9W*SRC=BZX84C3V9W;DI_BZX84C3V9W;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V9W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ) BZX84C43*SRC=BZX84C43;DI_BZX84C43;Diodes;Zener 10V-50V; 43.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.0 .MODEL DF D ( IS=3.35p RS=27.8 N=1.10 + CJO=22.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 ) .ENDS BZX84C47*SRC=BZX84C47;DI_BZX84C47;Diodes;Zener 10V-50V; 47.0V 0.350W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZX84C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 43.9 .MODEL DF D ( IS=3.07p RS=27.6 N=1.10 + CJO=22.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 ) .ENDS BZX84C4V3*SRC=BZX84C4V3;DI_BZX84C4V3;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.80 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=74.5 N=3.00 ) .ENDS BZX84C4V3S*SRC=BZX84C4V3S;DI_BZX84C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ) BZX84C4V3T*SRC=BZX84C4V3T;DI_BZX84C4V3T;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.74 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87f RS=74.5 N=3.00 ) BZX84C4V3TS*SRC=BZX84C4V3TS;DI_BZX84C4V3TS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V3TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ) BZX84C4V3W*SRC=BZX84C4V3W;DI_BZX84C4V3W;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V3W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=74.5 N=3.00 ) BZX84C4V7*SRC=BZX84C4V7;DI_BZX84C4V7;Diodes;Zener <=10V; 4.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=64.5 N=3.00 ) .ENDS BZX84C4V7S*SRC=BZX84C4V7S;DI_BZX84C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ) BZX84C4V7T*SRC=BZX84C4V7T;DI_BZX84C4V7T;Diodes;Zener <=10V; 4.70V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.18 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.63f RS=64.5 N=3.00 ) BZX84C4V7TS*SRC=BZX84C4V7TS;DI_BZX84C4V7TS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V7TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ) BZX84C4V7W*SRC=BZX84C4V7W;DI_BZX84C4V7W;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V7W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=64.5 N=3.00 ) BZX84C51*SRC=bzx84c51;DI_BZX84C51;Diodes;Zener >50V; 51.0V 0.350W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_BZX84C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.5 .MODEL DF D ( IS=2.83p RS=1.77 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 ) .ENDS BZX84C5V1*SRC=BZX84C5V1;DI_BZX84C5V1;Diodes;Zener <=10V; 5.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.74 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=44.5 N=3.00 ) .ENDS BZX84C5V1S*SRC=BZX84C5V1S;DI_BZX84C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ) BZX84C5V1T*SRC=BZX84C5V1T;DI_BZX84C5V1T;Diodes;Zener <=10V; 5.10V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.67 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=44.5 N=3.00 ) BZX84C5V1TS*SRC=BZX84C5V1TS;DI_BZX84C5V1TS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V1TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ) BZX84C5V1W*SRC=BZX84C5V1W;DI_BZX84C5V1W;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V1W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=44.5 N=3.00 ) BZX84C5V6*SRC=BZX84C5V6;DI_BZX84C5V6;Diodes;Zener <=10V; 5.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.33 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=24.5 N=3.00 ) .ENDS BZX84C5V6S*SRC=BZX84C5V6S;DI_BZX84C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) BZX84C5V6T*SRC=BZX84C5V6T;DI_BZX84C5V6T;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.27 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=24.5 N=3.00 ) BZX84C5V6TS*SRC=BZX84C5V6TS;DI_BZX84C5V6TS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V6TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) BZX84C5V6W*SRC=BZX84C5V6W;DI_BZX84C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) BZX84C6V2*SRC=BZX84C6V2;DI_BZX84C6V2;Diodes;Zener <=10V; 6.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=2.30 N=1.49 ) .ENDS BZX84C6V2S*SRC=BZX84C6V2S;DI_BZX84C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ) BZX84C6V2T*SRC=BZX84C6V2T;DI_BZX84C6V2T;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V2T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.09 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=2.30 N=1.49 ) BZX84C6V2TS*SRC=BZX84C6V2TS;DI_BZX84C6V2TS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V2TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ) BZX84C6V2W*SRC=BZX84C6V2W;DI_BZX84C6V2W;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V2W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=2.30 N=1.49 ) BZX84C6V8*SRC=BZX84C6V8;DI_BZX84C6V8;Diodes;Zener <=10V; 6.80V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=3.45 N=2.23 ) .ENDS BZX84C6V8S*SRC=BZX84C6V8S;DI_BZX84C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V8S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) BZX84C6V8TSRC=BZX84C6V8T;DI_BZX84C6V8T;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V8T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.13 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=3.45 N=2.23 ) .ENDS BZX84C6V8TS*SRC=BZX84C6V8TS;DI_BZX84C6V8TS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V8TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) BZX84C6V8W*SRC=BZX84C6V8W;DI_BZX84C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V8W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) BZX84C7V5*SRC=BZX84C7V5;DI_C;Diodes;Zener <=10V; 7.50V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=3.45 N=2.23 ) .ENDS BZX84C7V5S*SRC=BZX84C7V5S;DI_BZX84C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C7V5S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ) BZX84C7V5T*SRC=BZX84C7V5T;DI_BZX84C7V5T;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C7V5T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.82 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=3.45 N=2.23 ) BZX84C7V5TS*SRC=BZX84C7V5TS;DI_BZX84C7V5TS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C7V5TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ) BZX84C7V5W*SRC=BZX84C7V5W;DI_BZX84C7V5W;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C7V5W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=3.45 N=2.23 ) BZX84C8V2*SRC=BZX84C8V2;DI_BZX84C8V2;Diodes;Zener <=10V; 8.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.57 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=3.45 N=2.23 ) .ENDS BZX84C8V2S*SRC=BZX84C8V2S;DI_BZX84C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C8V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ) BZX84C8V2T*SRC=BZX84C8V2T;DI_BZX84C8V2T;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C8V2T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.52 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=3.45 N=2.23 ) BZX84C8V2TS*SRC=BZX84C8V2TS;DI_BZX84C8V2TS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C8V2TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ) BZX84C8V2W*SRC=BZX84C8V2W;DI_BZX84C8V2W;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C8V2W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=3.45 N=2.23 ) BZX84C9V1*SRC=BZX84C9V1;DI_BZX84C9V1;Diodes;Zener <=10V; 9.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.46 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=3.45 N=2.23 ) .ENDS BZX84C9V1S*SRC=BZX84C9V1S;DI_BZX84C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C9V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ) BZX84C9V1T*SRC=BZX84C9V1T;DI_BZX84C9V1T;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C9V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=3.45 N=2.23 ) BZX84C9V1TS*SRC=BZX84C9V1TS;DI_BZX84C9V1TS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C9V1TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ) BZX84C9V1W*SRC=BZX84C9V1W;DI_BZX84C9V1W;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C9V1W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=3.45 N=2.23 ) CTA2N1P******************************************************************************************************************************* *SRC=CTA2N1P;DI_CTA2N1P_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_CTA2N1P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* CTA2P1N---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ----------------------------------------------------------------------------------------------------------------------------------------------------------------- D3Z5V1BF*SRC= D3Z5V1BF; D3Z5V1BF;Diodes;Zener <=10V; 5.09V 0.500W DIODES Zener *SYM=HZEN .SUBCKT D3Z5V1BF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.66 .MODEL DF D ( IS=40.5p RS=1.92 N=1.10 + CJO=30.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.09f RS=64.5 N=3.00 ) .ENDS DCX114EH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX114EK****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EK;DI_DCX114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EK;DI_DCX114EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX114EU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EU;DI_DCX114EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EU;DI_DCX114EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX114TH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TH;DI_DCX114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TH;DI_DCX114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX114TK****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TK;DI_DCX114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TK;DI_DCX114TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX114TU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TU;DI_DCX114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TU;DI_DCX114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX114YH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YH;DI_DCX114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YH;DI_DCX114YH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX114YK****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YK;DI_DCX114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YK;DI_DCX114YK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX114YU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YU;DI_DCX114YU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YU;DI_DCX114YU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX122LH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122LH;DI_DCX122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122LH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122LH;DI_DCX122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX122TH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122TH;DI_DCX122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122TH;DI_DCX122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX123JH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JH;DI_DCX123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JH;DI_DCX123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX123JK****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JK;DI_DCX123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JK;DI_DCX123JK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX123JU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX124EH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EH;DI_DCX124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EH;DI_DCX124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX124EK****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EK;DI_DCX124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EK;DI_DCX124EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX124EU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EU;DI_DCX124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EU;DI_DCX124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX142JH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142JH;DI_DCX142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142JH;DI_DCX142JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX142TH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142TH;DI_DCX142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142TH;DI_DCX142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX143EH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143EH;DI_DCX143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143EH;DI_DCX143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX143TH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TH;DI_DCX143TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TH;DI_DCX143TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX143TK****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TK;DI_DCX143TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TK;DI_DCX143TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX143TU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TU;DI_DCX143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TU;DI_DCX143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX144EH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EH;DI_DCX144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EH;DI_DCX144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX144EK****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EK;DI_DCX144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EK;DI_DCX144EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DCX144EU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EU;DI_DCX144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EU;DI_DCX144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* DDA114EHNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EH;DI_DDA114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA114EKNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EK;DI_DDA114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA114EUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EU;DI_DDA114EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA114THNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TH;DI_DDA114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA114TKNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TK;DI_DDA114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA114TUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TU;DI_DDA114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA114YHNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YH;DI_DDA114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA114YKNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YK;DI_DDA114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA114YUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YU;DI_DDA114YU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA122LHNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122LH;DI_DDA122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122LH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA122LUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122LU;DI_DDA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122LU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA122THNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122TH;DI_DDA122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA122TUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122TU;DI_DDA122TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA123JHNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA123JH;DI_DDA123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA123JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA123JKNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA123JK;DI_DDA123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA123JK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA123JUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA123JU;DI_DDA123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA123JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA124EHNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EH;DI_DDA124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA124EKNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EK;DI_DDA124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA124EUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EU;DI_DDA124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA142JHNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142JH;DI_DDA142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA142JUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142JU;DI_DDA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA142THNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142TH;DI_DDA142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA142TUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142TU;DI_DDA142TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA143EHNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143EH;DI_DDA143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA143THNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TH;DI_DDA143TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA143TKNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TK;DI_DDA143TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA143TUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TU;DI_DDA143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA144EHNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EH;DI_DDA144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA144EKNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EK;DI_DDA144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDA144EUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EU;DI_DDA144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDC114EH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114EH;DI_DDC114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC114EU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114EU;DI_DDC114EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC114TH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114TH;DI_DDC114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC114TU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114TU;DI_DDC114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC114YU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114YU;DI_DDC114YU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114YU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC122LH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC122LU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC122TH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122TH;DI_DDC122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC122TU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122TU;DI_DDC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC123JH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC123JH;DI_DDC123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC123JU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC123JU;DI_DDC123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC124EH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC124EH;DI_DDC124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC124EU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC124EU;DI_DDC124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC142JH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142JH;DI_DDC142JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC142JU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142JU;DI_DDC142JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC142TH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142TH;DI_DDC142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC142TU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142TU;DI_DDC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC143EH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC143EH;DI_DDC143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC143TU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC143TU;DI_DDC143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC144EH****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC144EH;DI_DDC144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDC144EU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC144EU;DI_DDC144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTA113TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TCA;DI_DDTA113TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA113TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TE;DI_DDTA113TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA113TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TUA;DI_DDTA113TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA113ZCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZCA;DI_DDTA113ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA113ZENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZE;DI_DDTA113ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA113ZUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZUA;DI_DDTA113ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114ECANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114ECA;DI_DDTA114ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114EE;DI_DDTA114EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114EUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114EUA;DI_DDTA114EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114GCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GCA;DI_DDTA114GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114GENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GE;DI_DDTA114GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114GUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GUA;DI_DDTA114GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TCA;DI_DDTA114TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TE;DI_DDTA114TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TUA;DI_DDTA114TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114WCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WCA;DI_DDTA114WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114WENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WE;DI_DDTA114WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114WUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WUA;DI_DDTA114WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114YCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YCA;DI_DDTA114YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114YENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YE;DI_DDTA114YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA114YLP*SRC=DDTA114YLP;;BJTs PNP; Si; 50.0V 0.100A 250MHz Diodes, Inc. .MODEL PNP (IS=10.2f NF=1.00 BF=1.14k VAF=127 + IKF=14.7m ISE=25.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=54.2m RB=0.217 RC=21.7m + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=9.94p VJC=0.300 + MJC=0.300 TF=552p TR=95.0n EG=1.12 ) DDTA114YUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YUA;DI_DDTA114YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115ECANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115ECA;DI_DDTA115ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115EE;DI_DDTA115EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115EUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115EUA;DI_DDTA115EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115GCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GCA;DI_DDTA115GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115GENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GE;DI_DDTA115GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115GUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GUA;DI_DDTA115GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TCA;DI_DDTA115TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TE;DI_DDTA115TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA115TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TUA;DI_DDTA115TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA122LENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122LE;DI_DDTA122LE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122LE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA122LUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122LU;DI_DDTA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122LU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA122TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122TE;DI_DDTA122TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA122TUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122TU;DI_DDTA122TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123ECANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123ECA;DI_DDTA123ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123EE;DI_DDTA123EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123EUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123EUA;DI_DDTA123EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123JCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JCA;DI_DDTA123JCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123JENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JE;DI_DDTA123JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123JUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JUA;DI_DDTA123JUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TCA;DI_DDTA123TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TE;DI_DDTA123TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TUA;DI_DDTA123TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123YCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YCA;DI_DDTA123YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123YENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YE;DI_DDTA123YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA123YUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YUA;DI_DDTA123YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124ECANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124ECA;DI_DDTA124ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124EE;DI_DDTA124EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124EUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124EUA;DI_DDTA124EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124GCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GCA;DI_DDTA124GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124GENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GE;DI_DDTA124GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124GUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GUA;DI_DDTA124GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TCA;DI_DDTA124TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TE;DI_DDTA124TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TUA;DI_DDTA124TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124XCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XCA;DI_DDTA124XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124XENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XE;DI_DDTA124XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA124XUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XUA;DI_DDTA124XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA125TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TCA;DI_DDTA125TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA125TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TE;DI_DDTA125TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA125TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TUA;DI_DDTA125TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA142JENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142JE;DI_DDTA142JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142JE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA142JUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142JU;DI_DDTA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA142TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142TE;DI_DDTA142TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA142TUNote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142TU;DI_DDTA142TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143ECANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ECA;DI_DDTA143ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143EE;DI_DDTA143EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143EUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143EUA;DI_DDTA143EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143FCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FCA;DI_DDTA143FCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143FENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FE;DI_DDTA143FE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143FUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FUA;DI_DDTA143FUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TCA;DI_DDTA143TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TE;DI_DDTA143TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TUA;DI_DDTA143TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143XCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XCA;DI_DDTA143XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143XENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XE;DI_DDTA143XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143XUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XUA;DI_DDTA143XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143ZCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZCA;DI_DDTA143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143ZENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZE;DI_DDTA143ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA143ZUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZUA;DI_DDTA143ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144ECANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144ECA;DI_DDTA144ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144ECA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144EE;DI_DDTA144EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144EE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144EUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144EUA;DI_DDTA144EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144GCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GCA;DI_DDTA144GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144GENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GE;DI_DDTA144GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144GUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GUA;DI_DDTA144GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TCA;DI_DDTA144TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TE;DI_DDTA144TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TUA;DI_DDTA144TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144VCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VCA;DI_DDTA144VCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144VENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VE;DI_DDTA144VE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144VUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VUA;DI_DDTA144VUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144WCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WCA;DI_DDTA144WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144WENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WE;DI_DDTA144WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WE PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTA144WUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WUA;DI_DDTA144WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTB113EC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113EC;DI_DDTB113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB113EU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113EU;DI_DDTB113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB113ZC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113ZC;DI_DDTB113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB113ZU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113ZU;DI_DDTB113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB114EC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114EC;DI_DDTB114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB114EU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114EU;DI_DDTB114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB114GC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114GC;DI_DDTB114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB114GU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114GU;DI_DDTB114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB114TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114TC;DI_DDTB114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB114TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114TU;DI_DDTB114TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB122JC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122JC;DI_DDTB122JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB122JU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122JU;DI_DDTB122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB122LC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122LC;DI_DDTB122LC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB122LU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122LU;DI_DDTB122LU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122LU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB122TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122TC;DI_DDTB122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB122TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122TU;DI_DDTB122TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB123EC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123EC;DI_DDTB123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB123EU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123EU;DI_DDTB123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB123TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123TC;DI_DDTB123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB123TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123TU;DI_DDTB123TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB123YC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123YC;DI_DDTB123YC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123YC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB123YU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123YU;DI_DDTB123YU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123YU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB133HC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB133HC;DI_DDTB133HC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB133HU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB133HU;DI_DDTB133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB142JC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142JC;DI_DDTB142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB142JU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142JU;DI_DDTB142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB142TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142TC;DI_DDTB142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB142TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142TU;DI_DDTB142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB143EU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143EU;DI_DDTB143EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB143TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143TC;DI_DDTB143TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTB143TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143TU;DI_DDTB143TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTC113TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TCA;DI_DDTC113TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC113TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TE;DI_DDTC113TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC113TLP*SRC=DDTA113TLP;;BJTs PNP; Si; 50.0V 0.100A 250MHz Diodes, Inc. - .MODEL PNP (IS=10.2f NF=1.00 BF=415 VAF=127 + IKF=74.6m ISE=82.5f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=0.615 RB=2.46 RC=0.246 + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=9.94p VJC=0.300 + MJC=0.300 TF=479p TR=97.1n EG=1.12 ) DDTC113TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TUA;DI_DDTC113TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC113ZCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZCA;DI_DDTC113ZCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC113ZENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZE;DI_DDTC113ZE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC113ZUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZUA;DI_DDTC113ZUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114EE;DI_DDTC114EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114EUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114EUA;DI_DDTC114EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC114GUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114GUA;DI_DDTC114GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC114TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TCA;DI_DDTC114TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TE;DI_DDTC114TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TUA;DI_DDTC114TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114WCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WCA;DI_DDTC114WCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114WENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WE;DI_DDTC114WE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114WUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WUA;DI_DDTC114WUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114YCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YCA;DI_DDTC114YCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114YENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YE;DI_DDTC114YE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC114YUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YUA;DI_DDTC114YUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC115EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115EE;DI_DDTC115EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC115EUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115EUA;DI_DDTC115EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC115GE****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115GE;DI_DDTC115GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC115GUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115GUA;DI_DDTC115GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC115TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TCA;DI_DDTC115TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC115TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TE;DI_DDTC115TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC115TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TUA;DI_DDTC115TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC122LE****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC122LU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LU;DI_DDTC122LU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC122TE****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LE;DI_DDTC122TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC122TU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122TU;DI_DDTC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC123EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123EE;DI_DDTC123EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC123EUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123EUA;DI_DDTC123EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC123JENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123JE;DI_DDTC123JE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123JE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC123JUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123JUA;DI_DDTC123JUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123JUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC123TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TCA;DI_DDTC123TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC123TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TE;DI_DDTC123TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC123TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TUA;DI_DDTC123TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC123YCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YCA;DI_DDTC123YCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC123YENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YE;DI_DDTC123YE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC123YUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YUA;DI_DDTC123YUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC124EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124EE;DI_DDTC124EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC124EUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124EUA;DI_DDTC124EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC124GE****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC124GUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124GUA;DI_DDTC124GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC124TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TCA;DI_DDTC124TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC124TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TE;DI_DDTC124TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC124TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TUA;DI_DDTC124TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC124XCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XCA;DI_DDTC124XCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC124XENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XE;DI_DDTC124XE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC124XUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XUA;DI_DDTC124XUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC125TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TCA;DI_DDTC125TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC125TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TE;DI_DDTC125TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC125TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TUA;DI_DDTC125TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC142JE****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142JE;DI_DDTC142JE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142JE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC142JU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142JU;DI_DDTC142JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC142TE****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142TE;DI_DDTC142TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142TE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC142TU****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142TU;DI_DDTC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC143EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143EE;DI_DDTC143EE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143EUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143EUA;DI_DDTC143EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC143FCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FCA;DI_DDTC143FCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143FENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FE;DI_DDTC143FE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143FUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FUA;DI_DDTC143FUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TCA;DI_DDTC143TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TE;DI_DDTC143TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TUA;DI_DDTC143TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143XCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XCA;DI_DDTC143XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143XENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XE;DI_DDTC143XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143XUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XUA;DI_DDTC143XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143ZCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZCA;DI_DDTC143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143ZENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZE;DI_DDTC143ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC143ZUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZUA;DI_DDTC143ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144EENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144EE;DI_DDTC144EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144EUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144EUA;DI_DDTC144EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC144GE****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144GE;DI_DDTC144GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC144GUA****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144GUA;DI_DDTC144GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** DDTC144TCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TCA;DI_DDTC144TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144TENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TE;DI_DDTC144TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144TUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TUA;DI_DDTC144TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144VCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VCA;DI_DDTC144VCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144VENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VE;DI_DDTC144VE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144VUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VUA;DI_DDTC144VUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144WCANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WCA;DI_DDTC144WCA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144WENote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WE;DI_DDTC144WE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTC144WUANote: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WUA;DI_DDTC144WUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) DDTD113EC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113EC;DI_DDTD113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD113EU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113EU;DI_DDTD113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD113ZC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113ZC;DI_DDTD113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD113ZU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113ZU;DI_DDTD113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD114EC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114EC;DI_DDTD114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD114EU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114EU;DI_DDTD114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD114GC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114GC;DI_DDTD114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD114GU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114GU;DI_DDTD114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD114TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114TC;DI_DDTD114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD114TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114TU;DI_DDTD114TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD122JC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122JC;DI_DDTD122JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD122JU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122JU;DI_DDTD122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD122LC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122LC;DI_DDTD122LC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD122TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122TC;DI_DDTD122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD123EC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123EC;DI_DDTD123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD123EU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123EU;DI_DDTD123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD123TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123TC;DI_DDTD123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD123TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123TU;DI_DDTD123TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD123YC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123YC;DI_DDTD123YC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123YC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD123YU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123YU;DI_DDTD123YU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123YU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD133HC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD133HC;DI_DDTD133HC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD133HU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD133HU;DI_DDTD133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD142JC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142JC;DI_DDTD142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD142JU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142JU;DI_DDTD142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD142TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142TC;DI_DDTD142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD142TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142TU;DI_DDTD142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD143EC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143EC;DI_DDTD143EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD143EU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143EU;DI_DDTD143EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD143TC************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143TC;DI_DDTD143TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDTD143TU************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143TU;DI_DDTD143TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** DDZ10BSF*SRC=DDZ10BSF;DDZ10BSF;Diodes;Zener <=10V; 9.66V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ10BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=21.3p RS=33.1 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.27f RS=0.437 N=1.13 ) .ENDS DDZ10C*SRC=DDZ10C;DI_DDZ10C;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ10C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.65 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.11 N=3.00 ) .ENDS DDZ10CS*SRC=DDZ10CS;DI_DDZ10CS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ10CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.58 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 ) .ENDS DDZ11BSF*SRC=DDZ11BSF;DDZ11BSF;Diodes;Zener 10V-50V; 10.8V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ11BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.2 .MODEL DF D ( IS=19.1p RS=32.8 N=1.10 + CJO=36.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.81f RS=0.582 N=0.752 ) .ENDS DDZ11C*SRC=DDZ11C;DI_DDZ11C;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ11C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.77 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=2.30 N=2.97 ) .ENDS DDZ11CS*SRC=DDZ11CS;DI_DDZ11CS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ11CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.70 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 ) .ENDS DDZ12BSF*SRC=DDZ12BSF;DDZ12BSF;Diodes;Zener 10V-50V; 11.7V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ12BSF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.2 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=34.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=0.527 N=0.681 ) .ENDS DDZ12C*SRC=DDZ12C;DI_DDZ12C;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ12C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.73 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=4.23 N=3.00 ) .ENDS DDZ12CS*SRC=DDZ12CS;DI_DDZ12CS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ12CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.66 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 ) .ENDS DDZ13B*SRC=DDZ13B;DI_DDZ13B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ13B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.23 N=3.00 ) .ENDS DDZ13BS*SRC=DDZ13BS;DI_DDZ13BS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ13BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.6 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 ) .ENDS DDZ14*SRC=DDZ14;DI_DDZ14;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ14 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=8.23 N=3.00 ) .ENDS DDZ14S*SRC=DDZ14S;DI_DDZ14S;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ14S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 ) .ENDS DDZ15*SRC=DDZ15;DI_DDZ15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=10.2 N=3.00 ) .ENDS DDZ15S*SRC=DDZ15S;DI_DDZ15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 ) .ENDS DDZ16*SRC=DDZ16;DI_DDZ16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=10.2 N=3.00 ) .ENDS DDZ16S*SRC=DDZ16S;DI_DDZ16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 ) .ENDS DDZ18C*SRC=DDZ18C;DI_DDZ18C;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ18C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=15.2 N=3.00 ) .ENDS DDZ18CS*SRC=DDZ18CS;DI_DDZ18CS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ18CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 ) .ENDS DDZ20C*SRC=DDZ20C;DI_DDZ20C;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ20C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=20.2 N=3.00 ) .ENDS DDZ20CS*SRC=DDZ20CS;DI_DDZ20CS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ20CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 ) .ENDS DDZ22D*SRC=DDZ22D;DI_DDZ22D;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ22D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=14.5 N=3.00 ) .ENDS DDZ22DS*SRC=DDZ22DS;DI_DDZ22DS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ22DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 ) .ENDS DDZ24C*SRC=DDZ24C;DI_DDZ24C;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ24C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=19.5 N=3.00 ) .ENDS DDZ24CS*SRC=DDZ24CS;DI_DDZ24CS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ24CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 ) .ENDS DDZ27D*SRC=DDZ27D;DI_DDZ27D;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=29.5 N=3.00 ) .ENDS DDZ27DS*SRC=DDZ27DS;DI_DDZ27DS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 ) .ENDS DDZ27DSF*SRC=DDZ27DSF;DI_DDZ27DSF;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=29.5 N=3.00 ) .ENDS DDZ30D*SRC=DDZ30D;DI_DDZ30D;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ30D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=39.5 N=3.00 ) .ENDS DDZ30DS*SRC=DDZ30DS;DI_DDZ30DS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ30DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 ) .ENDS DDZ33*SRC=DDZ33;DI_DDZ33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=59.5 N=3.00 ) .ENDS DDZ33S*SRC=DDZ33S;DI_DDZ33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 ) .ENDS DDZ36*SRC=DDZ36;DI_DDZ36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.4 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=69.5 N=3.00 ) .ENDS DDZ36S*SRC=DDZ36S;DI_DDZ36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 ) .ENDS DDZ39F*SRC=DDZ39F;DI_DDZ39F;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ39F 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.4 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=69.5 N=3.00 ) .ENDS DDZ43*SRC=DDZ43;DI_DDZ43;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.4 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=74.5 N=3.00 ) .ENDS DDZ43S*SRC=DDZ43S;DI_DDZ43S;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ43S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 ) .ENDS DDZ5V1B*SRC=DDZ5V1B;DI_DDZ5V1B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) .ENDS DDZ5V1BS*SRC=DDZ5V1BS;DI_DDZ5V1BS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V1BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) .ENDS DDZ5V6B*SRC=DDZ5V6B;DI_DDZ5V6B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V6B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) .ENDS DDZ5V6BS*SRC=DDZ5V6BS;DI_DDZ5V6BS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V6BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) .ENDS DDZ6V2B*SRC=DDZ6V2B;DI_DDZ6V2B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V2B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) .ENDS DDZ6V2BS*SRC=DDZ6V2BS;DI_DDZ6V2BS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V2BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) .ENDS DDZ6V8C*SRC=DDZ6V8C;DI_DDZ6V8C;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) .ENDS DDZ6V8CS*SRC=DDZ6V8CS;DI_DDZ6V8CS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V8CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) .ENDS DDZ7V5C*SRC=DDZ7V5C;DI_DDZ7V5C;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ7V5C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) .ENDS DDZ7V5CS*SRC=DDZ7V5CS;DI_DDZ7V5CS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ7V5CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) .ENDS DDZ8V2C*DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1Mar2011 *VERSION=2 .SUBCKT DDZ8V2C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.8 N=1 ) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DDZ8V2CS*SRC=DDZ8V2CS;DI_DDZ8V2CS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ8V2CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) .ENDS DDZ9678*SRC=DDZ9678;DDZ9678;Diodes;Zener <=10V; 1.80V 0.500W DIODES ZENER DIODE *SYM=HZEN .SUBCKT DDZ9678 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.80 .MODEL DF D ( IS=114p RS=3.13 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=22.9f RS=43.7m N=282u ) .ENDS DDZ9688*SRC=DDZ9688;DI_DDZ9688;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9688 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.63 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=6.45k N=3.00 ) .ENDS DDZ9689*SRC=DDZ9689;DI_DDZ9689;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9689 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.15 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=3.95k N=3.00 ) .ENDS DDZ9689S*SRC=DDZ9689S;DI_DDZ9689S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9689S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.08 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 ) .ENDS DDZ9689T* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/09/2014 *VERSION=1 .model DDZ9689T D(IS=.015p RS=.06 CJO=165p M=0.5 IKF=20m VJ=0.5 N=1.08 BV=5.8 NBVL=24 NBV=1.2 IBVL=.15m IBV=.4m TT=40n EG=1.1 TRS1=1.1m TBV1=.01m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT DDZ9690*SRC=DDZ9690;DI_DDZ9690;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.79 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=946 N=3.00 ) .ENDS DDZ9690S*SRC=DDZ9690S;DI_DDZ9690S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.72 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=946 N=3.00 ) .ENDS DDZ9690T*SRC=DDZ9690T;DI_DDZ9690T;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.70 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=946 N=3.00 ) .ENDS DDZ9691*SRC=DDZ9691;DI_DDZ9691;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.31 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=230 N=1.49 ) .ENDS DDZ9691S*SRC=DDZ9691S;DI_DDZ9691S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.28 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=230 N=1.49 ) .ENDS DDZ9691T*SRC=DDZ9691T;DI_DDZ9691T;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.27 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=230 N=1.49 ) .ENDS DDZ9692*SRC=DDZ9692;DI_DDZ9692;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=23.0 N=0.149 ) .ENDS DDZ9692S*SRC=DDZ9692S;DI_DDZ9692S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 ) .ENDS DDZ9692T*SRC=DDZ9692T;DI_DDZ9692T;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=23.0 N=0.149 ) .ENDS DDZ9693*SRC=DDZ9693;DI_DDZ9693;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=23.0 N=0.149 ) .ENDS DDZ9693S*SRC=DDZ9693S;DI_DDZ9693S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 ) .ENDS DDZ9693T*SRC=DDZ9693T;DI_DDZ9693T;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=23.0 N=0.149 ) .ENDS DDZ9694*SRC=DDZ9694;DI_DDZ9694;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.07 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=34.5 N=0.223 ) .ENDS DDZ9694S*SRC=DDZ9694S;DI_DDZ9694S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 ) .ENDS DDZ9694T*SRC=DDZ9694T;DI_DDZ9694T;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=34.5 N=0.223 ) .ENDS DDZ9696*SRC=DDZ9696;DI_DDZ9696;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.90 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=50.6 N=0.327 ) .ENDS DDZ9696S*SRC=DDZ9696S;DI_DDZ9696S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 ) .ENDS DDZ9696T*SRC=DDZ9696T;DI_DDZ9696T;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=50.6 N=0.327 ) .ENDS DDZ9697*SRC=DDZ9697;DI_DDZ9697;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.73 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=69.0 N=0.446 ) .ENDS DDZ9697S*SRC=DDZ9697S;DI_DDZ9697S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.72 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 ) .ENDS DDZ9697T*SRC=DDZ9697T;DI_DDZ9697T;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=69.0 N=0.446 ) .ENDS DDZ9698*SRC=DDZ9698;DI_DDZ9698;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9698 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=69.0 N=0.446 ) .ENDS DDZ9698T*SRC=DDZ9698T;DI_DDZ9698T;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9698T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=69.0 N=0.446 ) .ENDS DDZ9699*SRC=DDZ9699;DI_DDZ9699;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=69.0 N=0.446 ) .ENDS DDZ9699S*SRC=DDZ9699S;DI_DDZ9699S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 ) .ENDS DDZ9699T*SRC=DDZ9699T;DI_DDZ9699T;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS DDZ9700*SRC=DDZ9700;DI_DDZ9700;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=69.0 N=0.446 ) .ENDS DDZ9700S*SRC=DDZ9700S;DI_DDZ9700S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 ) .ENDS DDZ9700T*SRC=DDZ9700T;DI_DDZ9700T;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=69.0 N=0.446 ) .ENDS DDZ9701*SRC=DDZ9701;DI_DDZ9701;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9701 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=69.0 N=0.446 ) .ENDS DDZ9702*SRC=DDZ9702;DI_DDZ9702;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=69.0 N=0.446 ) .ENDS DDZ9702S*SRC=DDZ9702S;DI_DDZ9702S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 ) .ENDS DDZ9702T*SRC=DDZ9702T;DI_DDZ9702T;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS DDZ9703*SRC=DDZ9703;DI_DDZ9703;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=69.0 N=0.446 ) .ENDS DDZ9703S*SRC=DDZ9703S;DI_DDZ9703S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS DDZ9703T*SRC=DDZ9703T;DI_DDZ9703T;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=69.0 N=0.446 ) .ENDS DDZ9705*SRC=DDZ9705;DI_DDZ9705;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=69.0 N=0.446 ) .ENDS DDZ9705S*SRC=DDZ9705S;DI_DDZ9705S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 ) .ENDS DDZ9705T*SRC=DDZ9705T;DI_DDZ9705T;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=69.0 N=0.446 ) .ENDS DDZ9707*SRC=DDZ9707;DI_DDZ9707;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=69.0 N=0.446 ) .ENDS DDZ9707S*SRC=DDZ9707S;DI_DDZ9707S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS DDZ9707T*SRC=DDZ9707T;DI_DDZ9707T;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=69.0 N=0.446 ) .ENDS DDZ9708*SRC=DDZ9708;DI_DDZ9708;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=92.0 N=0.594 ) .ENDS DDZ9708S*SRC=DDZ9708S;DI_DDZ9708S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 ) .ENDS DDZ9708T*SRC=DDZ9708T;DI_DDZ9708T;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=92.0 N=0.594 ) .ENDS DDZ9709*SRC=DDZ9709;DI_DDZ9709;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=92.0 N=0.594 ) .ENDS DDZ9709S*SRC=DDZ9709S;DI_DDZ9709S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 ) .ENDS DDZ9709T*SRC=DDZ9709T;DI_DDZ9709T;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=92.0 N=0.594 ) .ENDS DDZ9711*SRC=DDZ9711;DI_DDZ9711;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=92.0 N=0.594 ) .ENDS DDZ9711S*SRC=DDZ9711S;DI_DDZ9711S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 ) .ENDS DDZ9711T*SRC=DDZ9711T;DI_DDZ9711T;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=92.0 N=0.594 ) .ENDS DDZ9712*SRC=DDZ9712;DI_DDZ9712;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=92.0 N=0.594 ) DDZ9712S*SRC=DDZ9712S;DI_DDZ9712S;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 ) .ENDS DDZ9712T*SRC=DDZ9712T;DI_DDZ9712T;Diodes;Zener 10V-50V; 28.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.21p RS=26.7 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41e-016 RS=92.0 N=0.594 ) .ENDS DDZ9713*SRC=DDZ9713;DI_DDZ9713;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=92.0 N=0.594 ) .ENDS DDZ9713S*SRC=DDZ9713S;DI_DDZ9713S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 ) .ENDS DDZ9713T*SRC=DDZ9713T;DI_DDZ9713T;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=92.0 N=0.594 ) .ENDS DDZ9714*SRC=DDZ9714;DI_DDZ9714;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=1.35k N=3.00 ) .ENDS DDZ9714S*SRC=DDZ9714S;DI_DDZ9714S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 ) .ENDS DDZ9714T*SRC=DDZ9714T;DI_DDZ9714T;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.9 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=1.35k N=3.00 ) .ENDS DDZ9715*SRC=DDZ9715;DI_DDZ9715;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.9 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=4.45k N=3.00 ) .ENDS DDZ9715S*SRC=DDZ9715S;DI_DDZ9715S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.0 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 ) .ENDS DDZ9715T*SRC=DDZ9715T;DI_DDZ9715T;Diodes;Zener 10V-50V; 36.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.9 .MODEL DF D ( IS=1.72p RS=25.9 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43e-016 RS=1.45k N=3.00 ) .ENDS DDZ9716*SRC=DDZ9716;DI_DDZ9716;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=4.45k N=3.00 ) .ENDS DDZ9716S*SRC=DDZ9716S;DI_DDZ9716S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 ) .ENDS DDZ9716T*SRC=DDZ9716T;DI_DDZ9716T;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=1.45k N=3.00 ) .ENDS DDZ9717*SRC=DDZ9717;DI_DDZ9717;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.8 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=6.25k N=3.00 ) .ENDS DDZ9717S*SRC=DDZ9717S;DI_DDZ9717S;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=6.25k N=3.00 ) DDZ9717T*SRC=DDZ9717T;DI_DDZ9717T;Diodes;Zener 10V-50V; 43.0V 0.150W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=1.44p RS=25.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87e-016 RS=6.25k N=3.00 ) .ENDS DDZ9V1C*SRC=DDZ9V1C;DI_DDZ9V1C;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ9V1C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.76 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=4.11 N=3.00 ) .ENDS DDZ9V1CS*SRC=DDZ9V1CS;DI_DDZ9V1CS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ9V1CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.68 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 ) .ENDS DDZX10C*SRC=DDZX10C;DI_DDZX10C;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX10C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.61 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.47f RS=4.11 N=3.00 ) .ENDS DDZX11C*SRC=DDZX11C;DI_DDZX11C;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX11C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.74 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.25f RS=2.30 N=2.97 ) .ENDS DDZX12C*SRC=DDZX12C;DI_DDZX12C;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX12C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.69 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=4.23 N=3.00 ) .ENDS DDZX13B*SRC=DDZX13B;DI_DDZX13B;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX13B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.90f RS=6.23 N=3.00 ) .ENDS DDZX14*SRC=DDZX14;DI_DDZX14;Diodes;Zener 10V-50V; 14.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX14 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=8.83p RS=30.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.77f RS=8.23 N=3.00 ) .ENDS DDZX15*SRC=DDZX15;DI_DDZX15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=10.2 N=3.00 ) .ENDS DDZX16*SRC=DDZX16;DI_DDZX16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.55f RS=10.2 N=3.00 ) .ENDS DDZX18C*SRC=DDZX18C;DI_DDZX18C;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX18C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=15.2 N=3.00 ) .ENDS DDZX20C*SRC=DDZX20C;DI_DDZX20C;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX20C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=20.2 N=3.00 ) .ENDS DDZX22D*SRC=DDZX22D;DI_DDZX22D;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX22D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=14.5 N=3.00 ) .ENDS DDZX24C*SRC=DDZX24C;DI_DDZX24C;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX24C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=19.5 N=3.00 ) .ENDS DDZX27D*SRC=DDZX27D;DI_DDZX27D;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) .ENDS DDZX30D*SRC=DDZX30D;DI_DDZX30D;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX30D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) .ENDS DDZX33*SRC=DDZX33;DI_DDZX33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=59.5 N=3.00 ) .ENDS DDZX36*SRC=DDZX36;DI_DDZX36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=69.5 N=3.00 ) .ENDS DDZX39F*SRC=DDZX39F;DI_DDZX39F;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34e-016 RS=69.5 N=3.00 ) .ENDS DDZX43*SRC=DDZX43;DI_DDZX43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75e-016 RS=74.5 N=3.00 ) .ENDS DDZX5V1B*SRC=DDZX5V1B;DI_DDZX5V1B;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.58 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85f RS=13.1 N=3.00 ) .ENDS DDZX5V6B*SRC=DDZX5V6B;DI_DDZX5V6B;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V6B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.19 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41f RS=7.11 N=3.00 ) .ENDS DDZX6V2B*SRC=DDZX6V2B;DI_DDZX6V2B;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V2B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.87 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.99f RS=3.11 N=3.00 ) .ENDS DDZX6V8C*SRC=DDZX6V8C;DI_DDZX6V8C;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.52 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.64f RS=1.15 N=2.97 ) .ENDS DDZX7V5C*SRC=DDZX7V5C;DI_DDZX7V5C;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX7V5C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.17 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.30f RS=2.12 N=3.00 ) .ENDS DDZX8V2C*SRC=DDZX8V2C;DI_DDZX8V2C;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX8V2C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.82 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.01f RS=4.11 N=3.00 ) .ENDS DDZX9V1C*SRC=DDZX9V1C;DI_DDZX9V1C;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX9V1C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.72f RS=4.11 N=3.00 ) .ENDS DF005M*SRC=DF005M;DI_DF005M;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005M D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF005S*SRC=DF005S;DI_DF005S;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005S D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF01M*SRC=DF01M;DI_DF01M;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01M D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF01S*SRC=DF01S;DI_DF01S;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01S D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF02M*SRC=DF02M;DI_DF02M;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02M D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF02S*SRC=DF02S;DI_DF02S;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02S D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF04M*SRC=DF04M;DI_DF04M;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04M D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF04S*SRC=DF04S;DI_DF04S;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04S D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF06M*SRC=DF06M;DI_DF06M;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06M D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF06S*SRC=DF06S;DI_DF06S;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06S D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF08M*SRC=DF08M;DI_DF08M;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08M D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF08S*SRC=DF08S;DI_DF08S;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08S D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF10M*SRC=DF10M;DI_DF10M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10M D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF10S*SRC=DF10S;DI_DF10S;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10S D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF15005S*SRC=DF15005S;DI_DF15005S;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF15005S D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF1501S*SRC=DF1501S;DI_DF1501S;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1501S D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF1502S*SRC=DF1502S;DI_DF1502S;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1502S D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF1504S*SRC=DF1504S;DI_DF1504S;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1504S D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF1506S*SRC=DF1506S;DI_DF1506S;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1506S D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF1508S*SRC=DF1508S;DI_DF1508S;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1508S D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DF1510S*SRC=DF1510S;DI_DF1510S;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1510S D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) DFLF1800*DFLF1800 Spice Model v1.0 Last Revised 03/06/2014 Diodes Inc Fast Recovery Rectifier .MODEL DI_DFLF1800 D ( IS=59.0n RS=44.7m BV=800 IBV=10.00u + CJO=12.4p M=0.245 N=2.235 TT=4.32u ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA DFLR1200*SRC=DFLR1200;DI_DFLR1200;Diodes;Si; 200V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1200 D ( IS=5.90n RS=44.7m BV=200 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) DFLR1400*SRC=DFLR1400;DI_DFLR1400;Diodes;Si; 400V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1400 D ( IS=5.90n RS=44.7m BV=400 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) DFLR1600*SRC=DFLR1600;DI_DFLR1600;Diodes;Si; 600V 1.00A 3.00us Diodes Inc Standard Recovery Rectifier .MODEL DI_DFLR1600 D ( IS=5.90n RS=44.7m BV=600 IBV=3.00u + CJO=18.5p M=0.333 N=1.88 TT=4.32u ) DFLS1100*SRC=DFLS1100;DI_DFLS1100;Diodes;Si; 100V 1.00A 11.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1100 D ( IS=270n RS=28.3m BV=100 IBV=1.00u + CJO=70.9p M=0.333 N=1.50 TT=15.8n ) DFLS1150*SRC=DFLS1150;DI_DFLS1150;Diodes;Si; 150V 1.00A 14.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS1150 D ( IS=10.2u RS=27.0m BV=150 IBV=2.00u + CJO=55.2p M=0.333 N=2.32 TT=20.2n ) DFLS1200*SRC=DFLS1200;DI_DFLS1200;Diodes;Si; 200V 1.00A 30.0ns Diodes Inc. Schottky .MODEL DI_DFLS1200 D ( IS=64.7u RS=10.3m BV=200 IBV=2.00u + CJO=45.3p M=0.333 N=3.25 TT=43.2n ) DFLS120L*SRC=DFLS120L;DI_DFLS120L;Diodes;Si; 20.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS120L D ( IS=21.0u RS=46.3m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.936 TT=7.20n ) DFLS130*SRC=DFLS130;DI_DFLS130;Diodes;Si; 30.0V 1.00A 5.00ns DIODES INC SCHOTTKY RECTIFIER .MODEL DI_DFLS130 D ( IS=35.5u RS=54.5m BV=30.0 IBV=1.00m + CJO=97.1p M=0.333 N=1.09 TT=7.20n ) DFLS130L*DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=10AUG2011 *VERSION=2 * .MODEL DFLS130L D(IS=10U RS=58m N=0.88 BV=30 IBV=0.36m NBV=150 + EG=0.62 ISR=30u CJO=396.4p VJ=0.31 M=0.48 TBV1=-0.007 TRS1=0.0045) *$ DFLS140*SRC=DFLS140;DI_DFLS140;Diodes;Si; 40.0V 1.10A 5.00ns Diodes Inc Schottky .MODEL DI_DFLS140 D ( IS=163n RS=0.103 BV=40.0 IBV=20.0u + CJO=99.4p M=0.333 N=1.00 TT=7.20n ) DFLS140L*SRC=DFLS140L;DI_DFLS140L;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Low VF Schottky .MODEL DI_DFLS140L D ( IS=817n RS=32.2m BV=40.0 IBV=500u + CJO=293p M=0.333 N=1.01 TT=7.20n ) DFLS160*SRC=DFLS160;DI_DFLS160;Diodes;Si; 60.0V 1.00A 10.0ns Diodes Inc. Schottky Rectifier .MODEL DI_DFLS160 D ( IS=736n RS=63.0m BV=60.0 IBV=100u + CJO=163p M=0.333 N=1.01 TT=14.4n ) DFLS2100*DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *DATE=16/12/2014 *VERSION=1.1 * .SUBCKT DFLS2100 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D (IS=4n RS=.2 BV=110 IBV=50u CJO=88p M=.4 VJ=.55 N=1.05 IKF=60m TRS1=.006 TT=15n EG=.8) .model Dpn D(IS=1p IKF=100 BV=110 TT=50n EG=1.05 RS=.028 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL DFLS220L*SRC=DFLS220L;DI_DFLS220L;Diodes;Si; 20.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS220L D ( IS=20.3u RS=47.4m BV=20.0 IBV=1.00m + CJO=252p M=0.333 N=0.947 TT=7.20n ) DFLS230*SRC=DFLS230;DI_DFLS230;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230 D ( IS=100u RS=52.2m BV=30.0 IBV=1.00m + CJO=133p M=0.333 N=1.27 TT=7.20n ) DFLS230L*SRC=DFLS230L;DI_DFLS230L;Diodes;Si; 30.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS230L D ( IS=125u RS=43.6m BV=30.0 IBV=1.00m + CJO=265p M=0.333 N=1.21 TT=7.20n ) DFLS230LH*SRC=DFLS230LH;DI_DFLS230LH;Diodes;Si; 30.0V 1.00A 11.0ns Diodes Inc. Schottky .MODEL DI_DFLS230LH D ( IS=947n RS=32.4m BV=30.0 IBV=200u + CJO=206p M=0.333 N=0.957 TT=15.8n ) DFLS240L*SRC=DFLS240L;DI_DFLS240L;Diodes;Si; 40.0V 2.00A 5.00ns Diodes Inc. Schottky .MODEL DI_DFLS240L D ( IS=516n RS=31.4m BV=40.0 IBV=500u + CJO=292p M=0.333 N=0.911 TT=7.20n ) DFLT15A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=24/02/2013 *VERSION=1 .model DFLT15A D(IS=4f RS=0.194 CJO=4000p M=0.6 VJ=0.5 ISR=.008u N=1.05 IKF=1m BV=16.9 IBV=100u TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT DFLU1400* DFLU1400 SPICE model * * THIS MODEL IS A SPICE SUBCIRCUIT. * ANY NETLIST USING IT MUST INCLUDE * A STATEMENT WITH THE FOLLOWING SYNTAX * * X1 DFLU1400 A C * * SUBCIRCUIT NODE 1 -> ANODE * SUBCIRCUIT NODE 2 -> CATHODE * .SUBCKT DFLU1400 1 2 D1 1 2 DFLU1400_1 D2 1 2 DFLU1400_2 * .MODEL DFLU1400_1 D ( +LEVEL = 1 IS = 8.97113e-10 RS = 0.218519 +N = 1.00753 BV = 400 IBV = 5e-06 +CJO = 1.7785e-11 VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 2.98187 EG = 1.19064 +TT = 33e-9 IKF = 6.06945e-06 TRS1 = -0.00446639 +TRS2 = 9.32759e-06 ) * .MODEL DFLU1400_2 D ( +LEVEL = 1 IS = 1.05089e-12 RS = 0.146586 +N = 1.16507 BV = 1E5 IBV = 1e-06 +CJO = 1.7785e-11 VJ = 0.468489 MJ = 0.395956 +FC = 0.5 XTI = 3.14412 EG = 1.05458 +TRS1 = 0.000149447 TRS2 = 2.90699e-05 IKF = 9.9308e-06 +TT = 33e-9 ) * .ENDS DFLU1400 DFLZ10*SRC=DFLZ10;DI_DFLZ10;Diodes;Zener <=10V; 10.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.86 .MODEL DF D ( IS=41.2p RS=0.773 N=1.10 + CJO=622p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=0.230 N=1.49 ) DFLZ11*SRC=DFLZ11;DI_DFLZ11;Diodes;Zener 10V-50V; 11.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.58 .MODEL DF D ( IS=37.5p RS=0.759 N=1.10 + CJO=478p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49f RS=2.45 N=3.00 ) DFLZ12*SRC=DFLZ12;DI_DFLZ12;Diodes;Zener 10V-50V; 12.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.58 .MODEL DF D ( IS=34.3p RS=0.747 N=1.10 + CJO=427p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=2.45 N=3.00 ) DFLZ13*SRC=DFLZ13;DI_DFLZ13;Diodes;Zener 10V-50V; 13.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=31.7p RS=0.736 N=1.10 + CJO=415p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34f RS=3.45 N=3.00 ) DFLZ15*SRC=DFLZ15;DI_DFLZ15;Diodes;Zener 10V-50V; 15.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.5 .MODEL DF D ( IS=27.5p RS=0.715 N=1.10 + CJO=402p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=3.00 ) DFLZ16*SRC=DFLZ16;DI_DFLZ16;Diodes;Zener 10V-50V; 16.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=25.7p RS=0.706 N=1.10 + CJO=371p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=2.89 N=3.00 ) DFLZ18*SRC=DFLZ18;DI_DFLZ18;Diodes;Zener 10V-50V; 18.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=22.9p RS=0.689 N=1.10 + CJO=332p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=2.89 N=3.00 ) DFLZ20*SRC=DFLZ20;DI_DFLZ20;Diodes;Zener 10V-50V; 20.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=20.6p RS=0.674 N=1.10 + CJO=313p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=2.89 N=3.00 ) DFLZ22*SRC=DFLZ22;DI_DFLZ22;Diodes;Zener 10V-50V; 22.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=18.7p RS=0.661 N=1.10 + CJO=277p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=2.89 N=3.00 ) DFLZ24*SRC=DFLZ24;DI_DFLZ24;Diodes;Zener 10V-50V; 24.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=17.2p RS=0.648 N=1.10 + CJO=259p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=2.89 N=3.00 ) DFLZ27*SRC=DFLZ27;DI_DFLZ27;Diodes;Zener 10V-50V; 27.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=15.3p RS=0.631 N=1.10 + CJO=253p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.05f RS=2.89 N=3.00 ) DFLZ33*SRC=DFLZ33;DI_DFLZ33;Diodes;Zener 10V-50V; 33.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=12.5p RS=0.603 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.50f RS=2.89 N=3.00 ) DFLZ36*SRC=DFLZ36;DI_DFLZ36;Diodes;Zener 10V-50V; 36.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.9 .MODEL DF D ( IS=11.4p RS=0.590 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=1.15 N=1.49 ) DFLZ39*SRC=DFLZ39;DI_DFLZ39;Diodes;Zener 10V-50V; 39.0V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 37.9 .MODEL DF D ( IS=10.6p RS=0.579 N=1.10 + CJO=220p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.11f RS=1.15 N=1.49 ) DFLZ5V1*SRC=DFLZ5V1;DI_DFLZ5V1;Diodes;Zener <=10V; 5.10V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.69 .MODEL DF D ( IS=80.8p RS=0.869 N=1.10 + CJO=1.80n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=16.2f RS=1.22 N=3.00 ) DFLZ5V6*SRC=DFLZ5V6;DI_DFLZ5V6;Diodes;Zener <=10V; 5.60V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.30 .MODEL DF D ( IS=73.6p RS=0.856 N=1.10 + CJO=1.52n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=14.7f RS=0.230 N=2.97 ) DFLZ6V2*SRC=DFLZ6V2;DI_DFLZ6V2;Diodes;Zener <=10V; 6.20V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.89 .MODEL DF D ( IS=66.5p RS=0.841 N=1.10 + CJO=1.26n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.3f RS=0.230 N=2.97 ) DFLZ6V8*SRC=DFLZ6V8;DI_DFLZ6V8;Diodes;Zener <=10V; 6.80V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=60.6p RS=0.828 N=1.10 + CJO=1.02n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.1f RS=0.230 N=2.97 ) DFLZ7V5*SRC=DFLZ7V5;DI_DFLZ7V5;Diodes;Zener <=10V; 7.50V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=54.9p RS=0.814 N=1.10 + CJO=926p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.0f RS=0.230 N=2.97 ) DFLZ8V2*SRC=DFLZ8V2;DI_DFLZ8V2;Diodes;Zener <=10V; 8.20V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=50.2p RS=0.801 N=1.10 + CJO=767p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.0f RS=0.230 N=2.97 ) DFLZ9V1*SRC=DFLZ9V1;DI_DFLZ9V1;Diodes;Zener <=10V; 9.10V 1.00W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_DFLZ9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.96 .MODEL DF D ( IS=45.3p RS=0.786 N=1.10 + CJO=688p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.05f RS=0.230 N=1.49 ) DIMD10A****************************************************************************************************************************** 500mA PNP ****************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DIMD10A;DI_DIMD10A;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DIMD10A PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** 100mA NPN ****************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DIMD10A;DI_DIMD10A;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DIMD10A NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ****************************************************************************************************************************** DJT4030P* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=16/04/2009 *VERSION=1 * .MODEL DJT4030P PNP IS=5.5e-13 NF=1 ISE=1.3e-13 NE=1.5 BF=360 + VAF=36 IKF=8 ISC=1.1e-13 NC=1.28 BR=55 VAR=6.6 IKR=1.4 RE=9e-3 + RB=300e-3 RC=9e-3 CJE=380e-12 VJE=0.7 MJE=0.4 CJC=111e-12 + VJC=0.4 MJC=0.35 TF=8.5e-10 TR=3.7e-9 XTB=1.6 QUASIMOD=1 + RCO=0.24 GAMMA=6e-10 * *$ DLD101* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=03/08/2010 *VERSION=2 *------connections-------P1=D, P2=G, P3=N/C, P4=C, P5=E, P6=R1, P7=B, P8=S * .SUBCKT DLD101 P1 P2 P4 P5 P6 P7 P8 * *MOSFET model M1 6 2 5 5 Nmod L=1E-6 W=0.2 M2 5 2 5 6 Pmod L=1.5E-6 W=0.15 RG P2 2 7 RIN 2 5 1E9 RD P1 6 Rdmod 0.58 RB P1 7 Rdmod 0.015 RL 6 5 10E9 C1 2 5 10E-12 C2 P1 P2 3E-12 D1 5 7 Dbodymod LS 5 P8 2.0E-9 * *Bipolar model Q1 P4 P7 P5 NPNmod R1 P6 P7 4.7E3 R2 P5 P7 47E3 * .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.7 KP=8.6E-6 RS=.046 NFS=2E12 + KAPPA=0.06 UO=650 IS=6E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=6E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-12 N=1.05 RS=0.045 TRS1=1.5e-3 CJO=39e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=1.7E-5) .MODEL NPNmod NPN (IS=6E-14 NF=1.02 BF=320 IKF=0.3 VAF=80 ISE=5E-14 NE=1.4 NR=1 BR=10 + IKR=0.06 VAR=10 ISC=2E-13 NC=1.3 RC=0.194 RB=0.5 RE=0.245 CJC=6.05E-12 MJC=0.175 VJC=0.4 + CJE=13E-12 MJE=0.36 VJE=0.7 TF=0.4E-9 TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=25 GAMMA=5E-8) .ENDS DLD101 * *$ DLPA004*SRC=DLPA004;DLPA004;Diodes;Si; 85.0V 0.300A 3.00us DIODES Switching Diodes .MODEL DLPA004 D ( IS=42.4p RS=0.140 BV=85.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=4.32u ) DLPA006*SRC=DLPA006;DI_DLPA006;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of DLPA006 array .MODEL DI_DLPA006 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) DLPA006*SRC=DLPA006;DI_DLPA006;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of DLPA006 array .MODEL DI_DLPA006 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) DMB2227A*SRC=DMB2227A;DI_DMB2227A_NPN;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DMB2227A_NPN NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) *SRC=DMB2227A;DI_DMB2227A_PNP;BJTs PNP; Si; 60.0V 0.600A 360MHz - .MODEL DI_DMB2227A_PNP NPN (IS=6.60f NF=1.00 BF=151 VAF=139 + IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174 + XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300 + MJC=0.300 TF=416p TR=71.8n EG=1.12 ) DMB53D0UDW*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) DMB53D0UV*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) DMB54D0UDW*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) DMB54D0UV*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) DMC2004DWK*---------- DMC2004DWK Spice Model ---------- *NMOS .SUBCKT DMC2004DWK_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=2E-7 N=2.2 BV=13 .ENDS *PMOS .SUBCKT DMC2004DWK_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=1E-7 N=2.2 BV=12.3 .ENDS *Diodes DMC2004DWK Spice Model v1.0 (ESD added) Last Revised 2012/6/1 DMC2004LPK*---------- DMC2004LPK Spice Model ---------- *NMOS .SUBCKT DMC2004LPK_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=2E-7 N=2.2 BV=13 .ENDS *PMOS .SUBCKT DMC2004LPK_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=1E-7 N=2.2 BV=12.3 .ENDS *Diodes DMC2004LPK Spice Model v1.0 (ESD added) Last Revised 2012/6/1 DMC2004VK*---------- DMC2004VK Spice Model ---------- *NMOS .SUBCKT DMC2004VK_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=2E-7 N=2.2 BV=13 .ENDS *PMOS .SUBCKT DMC2004VK_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS=1E-7 N=2.2 BV=12.3 .ENDS *Diodes DMC2004VK Spice Model v1.0 (ESD added) Last Revised 2012/6/1 DMC2038LVT*---------- DMC2038LVT Spice Model ---------- *NMOS .SUBCKT DMC2038LVT_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02716 RS 30 3 0.001 RG 20 2 1.9 CGS 2 3 3.359E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 0.9264 + TOX = 6E-008 NSUB = 1E+017 KP = 48.04 KAPPA = 0.1 U0 = 400 .MODEL DCGD D CJO = 3.417E-010 VJ = 0.2406 M = 0.4472 .MODEL DSUB D IS = 2.969E-010 N = 1.598 RS = 0.02426 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2038LVT_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04586 RS 30 3 0.001 RG 20 2 72 CGS 2 3 5.078E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75 .MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329 .MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25 + CJO = 3.296E-011 VJ = 0.3087 M = 0.4639 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2038LVT_PMOS Spice Model v2.0 Last Revised 2013/8/27 DMC2400UV*---------- DMC2400UV Spice Model ---------- *NMOS .SUBCKT DMC2400UV_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2400UV_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2400UV Spice Model v1.0 Last Revised 2014/11/18 DMC2990UDJ*---------- DMC2990UDJ Spice Model ---------- *NMOS .SUBCKT DMC2990UDJ_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC2990UDJ_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.6562 RS 30 3 0.001 RG 20 2 400 CGS 2 3 2.653E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 .MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 .MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 + BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC2990UDJ Spice Model v1.0 Last Revised 2012/11/30 DMC3018LSD (Not Recommended)*---------- DMC3018LSD Spice Model ---------- *NMOS .SUBCKT DMC3018LSD_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3018LSD_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3018LSD Spice Model v2.0 Last Revised 2012/8/6 DMC3021LK4*---------- DMC3021LK4 Spice Model ---------- *NMOS .SUBCKT DMC3021LK4_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3021LK4_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3021LK4 Spice Model v2.0 Last Revised 2012/8/6 DMC3021LSD*---------- DMC3021LSD Spice Model ---------- *NMOS .SUBCKT DMC3021LSD_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3021LSD_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3021LSD Spice Model v2.0 Last Revised 2012/8/6 DMC3025LSD*---------- DMC3025LSD Spice Model ---------- *NMOS .SUBCKT DMC3025LSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3025LSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01769 RS 30 3 0.001 RG 20 2 10.8 CGS 2 3 5.834E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008 + NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877 .MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3025LSD Spice Model v1.0 Last Revised 2013/4/16 DMC3032LSD*---------- DMC3032LSD Spice Model ---------- *NMOS .SUBCKT DMC3032LSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01735 RS 30 3 0.001 RG 20 2 1.51 CGS 2 3 3.898E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.95E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.5 + TOX = 6E-008 NSUB = 1E+017 KP = 16.9 KAPPA = 9.834 U0 = 400 .MODEL DCGD D CJO = 2.661E-010 VJ = 0.2369 M = 0.408 .MODEL DSUB D IS = 1.445E-010 N = 1.257 RS = 0.01296 BV = 35 + CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC3032LSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3032LSD Spice Model v2.0 Last Revised 2012/8/06 DMC31D5UDJ*---------- DMC31D5UDJ Spice Model ---------- *NMOS .SUBCKT DMC31D5UDJ_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.7969 RS 30 3 0.001 RG 20 2 219 CGS 2 3 2.124E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0 VTO = 0.7496 + TOX = 6E-008 NSUB = 1E+016 KP = 1.745 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 1.072E-011 VJ = 0.111 M = 0.4766 .MODEL DSUB D IS = 8.906E-008 N = 1.859 RS = 0.9141 BV = 35 CJO = 1.64E-012 VJ = 0.1 M = 0.1 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMC31D5UDJ_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.727 RS 30 3 0.001 RG 20 2 389 CGS 2 3 2.041E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.3E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5546 KAPPA = 49.86 VTO = -0.7516 .MODEL DCGD D CJO = 7.862E-012 VJ = 0.2 M = 0.3592 .MODEL DSUB D IS = 2.888E-005 N = 4.275 RS = 4.441E-010 BV = 35 CJO = 2.878E-012 VJ = 0.6 M = 0.2781 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC31D5UDJ Spice Model v1.0 Last Revised 2014/12/5 DMC4029SSD*---------- DMC4029SSD Spice Model ---------- ************************************************************************************** * NMOS .SUBCKT DMC4029SSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS ********************************************************************************V * PMOS .SUBCKT DMC4029SSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0269 RS 30 3 0.001 RG 20 2 12.6 CGS 2 3 1.121E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 .MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC4029SSD Spice Model v1.0 Last Revised 2014/2/5 DMG1012T*SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS DMG1012UW*SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS DMG1013T*SYM=POWMOSP .SUBCKT DMG1013T 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=47.66m RD 10 1 300m RS 30 3 85m RG 20 2 1 CGS 2 3 57.55p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16 .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0 + CJO=20p VJ=0.600 M=0.50 .MODEL DLIM D IS=100U .ENDS DMG1013UW*SYM=POWMOSP .SUBCKT DMG1013UW 10 20 30 * TERMINALS: D G S M1 1 20 3 3 PMOS L=0.6U W=47.66m RD 10 1 300m RS 30 3 85m CGS 20 3 57.55p EGD 12 30 20 1 1 VFB 14 30 0 FFB 20 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16 .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0 + CJO=20p VJ=0.600 M=0.50 .MODEL DLIM D IS=100U .ENDS *Diodes DMG1013UW Spice Model v1.0 Last Revised 2014/6/17 DMG1016UDW*N-CH .SUBCKT DMG1016VN D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=57.5m RD 10 1 240m RS 30 3 60m RG 20 2 93 CGS 2 3 57p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17 ********************************************* .MODEL DCGD D CJO=27p VJ=80m M=0.320 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VN *P-CH .SUBCKT DMG1016VP D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=41m RD 10 1 300m RS 30 3 75m RG 20 2 150 CGS 2 3 54.55p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB ********************************************* .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17 ********************************************* .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=20p VJ=0.600 M=0.350 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VP DMG1016V*N-CH .SUBCKT DMG1016VN D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=57.5m RD 10 1 240m RS 30 3 60m RG 20 2 93 CGS 2 3 57p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17 ********************************************* .MODEL DCGD D CJO=27p VJ=80m M=0.320 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VN *P-CH .SUBCKT DMG1016VP D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=41m RD 10 1 300m RS 30 3 75m RG 20 2 150 CGS 2 3 54.55p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 22.2p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB ********************************************* .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17 ********************************************* .MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=20p VJ=0.600 M=0.350 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG1016VP DMG1023UV*---------- DMG1023UV Spice Model ---------- .SUBCKT DMG1023UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3494 RS 30 3 0.001 RG 20 2 147 CGS 2 3 5.502E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 200 VMAX = 4E+004 KP = 1.814 + ETA = 0.0001 TOX = 2E-008 NSUB = 1E+015 KAPPA = 0.3557 VTO = -0.8709 .MODEL DCGD D CJO = 2.616E-011 VJ = 0.127 M = 0.3001 .MODEL DSUB D IS = 1.524E-009 N = 1.789 RS = 0.1462 BV = 22 CJO = 1.689E-011 VJ = 0.3791 M = 0.2844 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1023UV Spice Model v1.0 Last Revised 2010/10/4 DMG1024UV*---------- DMG1024UV Spice Model ---------- .SUBCKT DMG1024UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2635 RS 30 3 0.001 RG 20 2 93 CGS 2 3 5.63E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.147E+004 ETA = 0.00355 VTO = 0.9014 + TOX = 1.68E-008 NSUB = 3.755E+015 KP = 4.794 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.806E-011 VJ = 0.04974 M = 0.2926 .MODEL DSUB D IS = 2.941E-010 N = 1.586 RS = 0.07503 BV = 22 CJO = 1.491E-011 VJ = 0.219 M = 0.277 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1024UV Spice Model v1.0 Last Revised 2010/10/4 DMG1026UV*---------- DMG1026UV Spice Model ---------- .SUBCKT DMG1026UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.188 RS 30 3 0.001 RG 20 2 127.7 CGS 2 3 3.079E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.099 + TOX = 6E-008 NSUB = 1E+017 KP = 1.832 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 1.712E-011 VJ = 0.6 M = 0.5004 .MODEL DSUB D IS = 7.2E-007 N = 2.594 RS = 0.03889 + BV = 35 CJO = 4.301E-012 VJ = 0.2 M = 0.1735 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1026UV Spice Model v1.0 Last Revised 2014/6/6 DMG1029SV*---------- DMG1029SV Spice Model ---------- *NMOS .SUBCKT DMG1029SV_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.009081 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMG1029SV_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.072 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.301E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513 .MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205 .MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ = 0.4761 M = 0.3849 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1029SV Spice Model v1.0 Last Revised 2012/4/17 DMG2301U*SYM=POWMOSP .SUBCKT DMG2301U D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=0.4 RD 10 1 60m RS 30 3 15m RG 20 2 44.9 CGS 2 3 560p EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 258p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-1.0 TOX=16.8n NSUB=5.36e16 .MODEL DCGD D CJO=298p VJ=0.50 M=0.550 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.500 M=0.650 .MODEL DLIM D IS=100U .ENDS DMG2302U*---------- DMG3420U Spice Model ---------- .SUBCKT DMG3420U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9 DMG2305UX*---------- DMG2305UX Spice Model ---------- .SUBCKT DMG2305UX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02969 RS 30 3 0.001 RG 20 2 15.2 CGS 2 3 7.613E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.28E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 26.49 KAPPA = 65.74 VTO = -0.8201 .MODEL DCGD D CJO = 5.79E-010 VJ = 0.2973 M = 0.5774 .MODEL DSUB D IS = 3.162E-009 N = 1.241 RS = 0.08353 BV = 1E+006 CJO = 5.653E-011 VJ = 0.008286 M = 0.1128 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2305UX Spice Model v1.0 Last Revised 2013/10/22 DMG2307L*---------- DMG2307L Spice Model ---------- .SUBCKT DMG2307L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04307 RS 30 3 0.001 RG 20 2 17.1 CGS 2 3 3.339E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.459 KAPPA = 9.123 VTO = -1.527 .MODEL DCGD D CJO = 1.701E-010 VJ = 0.4656 M = 0.372 .MODEL DSUB D IS = 5E-010 N = 1.421 RS = 0.05533 BV = 33 CJO = 2.821E-011 VJ = 0.5166 M = 0.4868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG2307L Spice Model v1.0 Last Revised 2011/10/28 DMG302PU*---------- DMG302PU Spice Model ---------- .SUBCKT DMG302PU 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 2.093 RS 30 3 0.001 RG 20 2 1970 CGS 2 3 2.534E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.4462 KAPPA = 49.86 VTO = -0.8635 .MODEL DCGD D CJO = 4.312E-012 VJ = 0.1388 M = 0.2172 .MODEL DSUB D IS = 3.518E-010 N = 1.34 RS = 0.5434 BV = 40 CJO = 1.22E-011 VJ = 0.6489 M = 0.363 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG302PU Spice Model v1.0 Last Revised 2015/3/16 DMG3401LSN*---------- DMG3401LSN Spice Model ---------- .SUBCKT DMG3401LSN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03105 RS 30 3 0.001 RG 20 2 7.3 CGS 2 3 1.279E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -0.8354 .MODEL DCGD D CJO = 2.85E-010 VJ = 0.07814 M = 0.2639 .MODEL DSUB D IS = 1.226E-009 N = 1.149 RS = 0.06597 + BV = 50 CJO = 1.669E-010 VJ = 0.6861 M = 0.5296 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3401LSN Spice Model v1.0 Last Revised 2012/11/28 DMG3414U*---------- DMG3414U Spice Model ---------- .SUBCKT DMG3414U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01338 RS 30 3 1E-003 RG 20 2 18 CGS 2 3 7.702E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 5.027E-008 VTO = 0.8394 + TOX = 6E-008 NSUB = 1E+016 KP = 46.34 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 4.271E-010 N = 1.076 RS = 0.05217 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3414U Spice Model v1.0 Last Revised 2011/7/7 DMG3415U*---------- DMG3415U Spice Model ---------- .SUBCKT DMG3415U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0317 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.65E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.464E+005 KP = 25.76 ETA = 0.005087 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.7287 VTO = -0.7669 .MODEL DCGD D CJO = 4.12E-010 VJ = 0.1028 M = 0.3062 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 2.196E-010 VJ = 0.2994 M = 0.4305 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3415U Spice Model v2.0 Last Revised 2013/12/10 DMG3415UFY4*---------- DMG3415UFY4 Spice Model ---------- .SUBCKT DMG3415UFY4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02849 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.685E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.25E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.206E+005 KP = 26.84 ETA = 0.004426 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.2906 VTO = -0.7669 .MODEL DCGD D CJO = 6.481E-010 VJ = 0.4221 M = 0.4512 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 1.057E-010 VJ = 0.008444 M = 0.2401 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3415UFY4 Spice Model v1.0 Last Revised 2011/3/24 DMG3420U*---------- DMG3420U Spice Model ---------- .SUBCKT DMG3420U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9 DMG4406LSS (Not Recommended)* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 .SUBCKT DMG4406LSS 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 5E-3 RS 23 3 Rmod1 4E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 1250E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1250E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.1 TOX=5.8E-8 NSUB=3E+16 KP=130 NFS=1E+12 IS=.5E-15 N=10) .MODEL DCGD D (CJO =260E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1E-12 N=1.025 RS=0.002 BV=35 CJO=400E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DMG4413LSS*SRC=DMG4413LSS;DI_DMG4413LSS;MOSFETs P;Enh;30.0V 10.5A 7.50mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMG4413LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 2.56m RS 40 3 1.19m RG 20 2 14.3 CGS 2 3 4.25n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.52n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=-2.10 KP=5.73 .MODEL DCGD D (CJO=6.52n VJ=0.600 M=0.680 .MODEL DSUB D (IS=43.6n N=1.50 RS=0.129 BV=30.0 + CJO=2.73n VJ=0.800 M=0.420 TT=285n .MODEL DLIM D (IS=100U) .ENDS DMG4435SSS*---------- DMG4435SSS Spice Model ---------- .SUBCKT DMG4435SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01231 RS 30 3 0.001 RG 20 2 6.83 CGS 2 3 1.465E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.556E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 164.9 VMAX = 1.945E+005 KP = 39.94 + ETA = 0.005129 TOX = 6E-008 NSUB = 1.104E+016 KAPPA = 3.689 VTO = -2.072 .MODEL DCGD D CJO = 7.47E-010 VJ = 0.518 M = 0.3662 .MODEL DSUB D IS = 2.364E-010 N = 1.296 RS = 0.007836 BV = 33 +CJO = 9.148E-011 VJ = 0.644 M = 0.663 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4435SSS Spice Model v1.0 Last Revised 2010/9/14 DMG4466SSS*---------- DMG4466SSS Spice Model ---------- .SUBCKT DMG4466SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4466SSS Spice Model v1.1 Last Revised 2011/1/8 DMG4466SSSL*---------- DMG4466SSSL Spice Model ---------- .SUBCKT DMG4466SSSL 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4466SSSL Spice Model v1.1 Last Revised 2011/1/18 DMG4468LFG*---------- DMG4468LFG Spice Model ---------- .SUBCKT DMG4468LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009103 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 7.889E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.003725 VTO = 2.01 + TOX = 6E-008 NSUB = 1E+017 KP = 50.8 KAPPA = 110.3 U0 = 400 .MODEL DCGD D CJO = 4.839E-010 VJ = 0.213 M = 0.3746 .MODEL DSUB D IS = 2.251E-010 N = 1.221 RS = 0.005011 BV = 35 CJO = 7.248E-011 VJ = 0.3928 M = 0.5931 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4468LFG Spice Model v1.0 Last Revised 2010/10/19 DMG4468LK3*---------- DMG4468LK3 Spice Model ---------- .SUBCKT DMG4468LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.009266 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 7.889E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0001 VTO = 2.046 + TOX = 6.045E-008 NSUB = 1E+017 KP = 28.97 KAPPA = 71.64 U0 = 400 .MODEL DCGD D CJO = 4.839E-010 VJ = 0.213 M = 0.3746 .MODEL DSUB D IS = 3.11E-010 N = 1.297 RS = 0.00732 BV = 35 CJO = 6.786E-011 VJ = 0.4257 M = 0.5551 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4468LK3 Spice Model v1.0 Last Revised 2010/10/6 DMG4496SSS*---------- DMG4496SSS Spice Model ---------- .SUBCKT DMG4496SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01007 RS 30 3 0.001 RG 20 2 2.86 CGS 2 3 4.495E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01276 VTO = 2.136 + TOX = 6E-008 NSUB = 4.86E+016 KP = 25.62 KAPPA = 7.551 U0=400 .MODEL DCGD D CJO = 1.88E-010 VJ = 0.1151 M = 0.2705 .MODEL DSUB D IS = 1E-009 N = 1.345 RS = 0.004398 BV = 35 CJO = 2.225E-010 VJ = 0.6 M = 0.4775 .MODEL DLIM D IS = 1E-005 .ENDS *Diodes DMG4496SSS Spice Model v1.0 Last Revised 2010/6/24 DMG4511SK4*---------- DMG4511SK4 Spice Model ---------- *NMOS .SUBCKT DMG4511SK4_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02 RS 30 3 0.0001227 RG 20 2 1.56 CGS 2 3 8.311E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 2.45 + TOX = 6E-008 NSUB = 1E+016 KP = 43.98 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 3.144E-010 VJ = 0.09587 M = 0.3239 .MODEL DSUB D IS = 3.094E-011 N = 1.136 RS = 0.01791 BV = 40 CJO = 1.281E-010 VJ = 0.3722 M = 0.5383 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMG4511SK4_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02422 RS 30 3 0.001 RG 20 2 7 CGS 2 3 9.898E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.558E+005 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+016 KP = 16.62 KAPPA = 1 VTO = -1.536 .MODEL DCGD D CJO = 3.059E-010 VJ = 0.1859 M = 0.2861 .MODEL DSUB D IS = 3.103E-011 N = 1.129 RS = 0.03535 BV = 45 CJO = 1.446E-010 VJ = 0.8474 M = 0.6504 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4511SK4 Spice Model v1.0 Last Revised 2011/10/28 DMG4710SSS*---------- DMG4710SSS Spice Model ---------- .SUBCKT DMG4710SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMG4710SSS Spice Model v1.0 Last Revised 2010/11/9 DMG4712SSS*---------- DMG4712SSS Spice Model ---------- .SUBCKT DMG4712SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 2.268E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.297E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 9.356E+005 ETA = 4.441E-017 VTO = 1.817 + TOX = 6E-008 NSUB = 4.849E+016 KP = 150 KAPPA = 138.4 U0 = 400 .MODEL DCGD D CJO = 4.894E-010 VJ = 0.01098 M = 0.1971 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 2.502E-010 N = 1.063 RS = 0.03357 .MODEL DL D IS = 1.094E-005 N = 1.118 RS = 0.04796 VJ = 0.2303 CJO = 6.6E-010 M = 0.6461 TT = 1.595E-008 .MODEL DR D IS = 1E-015 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMG4712SSS Spice Model v1.0 Last Revised 2010/10/25 DMG4800LFG*---------- DMG4800LFG Spice Model ---------- .SUBCKT DMG4800LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00633 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.616 + TOX = 6.045E-008 NSUB = 9.967E+015 KP = 31.63 KAPPA = 28.61 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.349 RS = 0.006635 BV = 35 CJO = 5.245E-011 VJ = 0.6712 M = 0.8243 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4800LFG Spice Model v1.0 Last Revised 2010/10/6 DMG4800LK3*---------- DMG4800LK3 Spice Model ---------- .SUBCKT DMG4800LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00609 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 6.734E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.515 + TOX = 6.045E-008 NSUB = 3.203E+015 KP = 26.14 KAPPA = 26.53 U0 = 400 .MODEL DCGD D CJO = 5.334E-010 VJ = 0.3477 M = 0.4238 .MODEL DSUB D IS = 2.647E-009 N = 1.306 RS = 0.01224 BV = 35 CJO = 5.333E-011 VJ = 0.6305 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4800LK3 Spice Model v1.0 Last Revised 2010/10/6 DMG4800LSD*SYM=POWMOSN .SUBCKT DMG4800LSD D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=2.304672 RD 10 1 2m RS 30 3 4m CGS 20 3 692p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 488p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=400 VMAX=40k + ETA=0.1m VTO=1.62 TOX=60n NSUB=2.16e16 .MODEL DCGD D CJO=488p VJ=450m M=0.420 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=30 + CJO=48p VJ=0.950 M=0.920 .MODEL DLIM D IS=100U .ENDS DMG4822SSD*---------- DMG4822SSD Spice Model ---------- .SUBCKT DMG4822SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4822SSD Spice Model v1.0 Last Revised 2011/6/27 DMG4932LSD*---------- DMG4932LSD Spice Model ---------- *NMOS_Q1 .SUBCKT DMG4932LSD_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *NMOS_Q2 .SUBCKT DMG4932LSD_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4932LSD Spice Model v1.0 Last Revised 2011/6/20 DMG4N65CT*---------- DMG4N65CT Spice Model ---------- .SUBCKT DMG4N65CT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.901 RS 30 3 0.001 RG 20 2 2.4 CGS 2 3 8.859E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 1E-012 VTO = 4.347 + TOX = 6E-008 NSUB = 1E+016 KP = 4.509 U0 = 400 KAPPA = 13.05 .MODEL DCGD D CJO = 3.337E-010 VJ = 0.6 M = 0.9816 .MODEL DSUB D IS = 2.232E-010 N = 1.338 RS = 0.002184 + BV = 700 CJO = 1.208E-009 VJ = 0.4984 M = 0.83 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG4N65CT Spice Model v1.0 Last Revised 2014/5/9 DMG5802LFX*---------- DMG5802LFX Spice Model ---------- .SUBCKT DMG5802LFX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01074 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 9.956E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.9E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 3.802E+005 ETA = 1E-006 VTO = 1.016 + TOX = 6E-008 NSUB = 1E+016 KP = 94.75 KAPPA = 7.017 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 1.268E-009 N = 1.142 RS = 0.02111 BV = 30 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG5802LFX Spice Model v1.0 Last Revised 2011/6/27 DMG6601LVT*DIODES_INC_SPICE_MODEL DMG6601LVT *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Mar2014 *VERSION=1 .SUBCKT DMG6601LVT G1 S2 G2 D2 S1 D1 *NMOS M1 1 2 3 3 Nmod1 RD D1 1 Rmod1 18E-3 RS 23 3 Rmod1 24E-3 RG G1 22 2 RIN G1 23 2E11 RDS D1 23 2E9 CGS 2 3 280E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 840E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 D1 DSUB EL 2 22 1 3 0.003 LS S1 23 2E-9 RL S1 23 3 RLrun S1 S2 3E+9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.31 TOX=4.5E-8 NSUB=1E+16 KP=50 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 72E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=1E-12 N=1.03 RS=0.022 BV=33 CJO=120E-12 VJ=0.45 M=0.33 TT=3E-9 TRS1=.0035) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .SIMULATOR DEFAULT *PMOS M2 4 5 6 6 Pmod1 RD2 D2 4 Rmod2 40E-3 RS2 53 6 Rmod2 50E-3 RG2 G2 52 17 RIN2 G2 53 2E11 RDS2 D2 53 2E9 CGS2 5 6 460E-12 EGD2 16 0 4 5 1 VFB2 18 0 0 FFB2 4 5 VFB2 1 CGD2 17 18 860E-12 R12 17 0 1 D12 16 17 DLIM DDG2 19 18 DCGD2 R22 16 19 1 D22 19 0 DLIM DSD2 D2 53 DSUB2 EL2 5 52 4 6 .003 RL2 S2 53 3 LS2 S2 53 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.2 TOX=4.5E-8 NSUB=1E+15 KP=45 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD2 D (CJO = 100E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB2 D (IS=.14E-12 N=1.02 RS=0.033 BV=33 CJO=94E-12 VJ=.45 M=0.33 TT=3E-9 TRS1=.002) .MODEL Rmod2 RES (TC1=2.5e-3 TC2=1E-6) *common model for PMOS and NMOS .MODEL DLIM D (IS=100U N=1 T_ABS=25) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL DMG6602SVT*---------- DMG6602SVT Spice Model ---------- *NMOS .SUBCKT DMG6602SVT_N 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01593 RS 30 3 0.001 RG 20 2 1.4 CGS 2 3 2.711E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405 .MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ = 0.4101 M = 0.9 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMG6602SVT_P 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04762 RS 30 3 0.001 RG 20 2 17 CGS 2 3 3.334E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 7.77E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 7.61 KAPPA = 25 VTO = -1.533 .MODEL DCGD D CJO = 1.725E-010 VJ = 0.4474 M = 0.3707 .MODEL DSUB D IS = 1.119E-011 N = 1.169 RS = 0.06724 BV = 35 CJO = 2.406E-011 VJ = 0.1 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6602SVT Spice Model v1.0 Last Revised 2011/8/15 DMG6968U*SRC=DMG6968U;DI_DMG6968U;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMG6968U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 33.7 CGS 2 3 119p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 226p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=0.900 KP=31.8 .MODEL DCGD D (CJO=226p VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0 + CJO=176p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS DMG6968UDM*SRC=DMG6968UDM;DI_DMG6968UDM;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMG6968UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 40.7 CGS 2 3 114p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 204p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=0.900 KP=31.8 .MODEL DCGD D (CJO=204p VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0 + CJO=134p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS DMG6968UTS*---------- DMG6968UTS Spice Model ---------- .SUBCKT DMG6968UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6968UTS Spice Model v1.0 Last Revised 2011/5/5 DMG7410SFG*---------- DMG7410SFG Spice Model ---------- .SUBCKT DMG7410SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006868 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 5.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0.001 VTO = 2.23 + TOX = 6E-008 NSUB = 1E+016 KP = 33.14 U0 = 400 KAPPA = 0.001011 .MODEL DCGD D CJO = 2.68E-010 VJ = 0.204 M = 0.3131 .MODEL DSUB D IS = 1.168E-010 N = 1.244 RS = 0.00323 BV = 35 CJO = 1.898E-010 VJ = 0.2902 M = 0.4412 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7410SFG Spice Model v1.0 Last Revised 2011/8/16 DMG7430LFG*---------- DMG7430LFG Spice Model ---------- .SUBCKT DMG7430LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007058 RS 30 3 0.001 RG 20 2 2.94 CGS 2 3 1.348E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 + BV = 45 CJO = 1.63E-010 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG7430LFG Spice Model v1.0 Last Revised 2014/3/14 DMG8601UFG*---------- DMG8601UFG Spice Model ---------- .SUBCKT DMG8601UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG8601UFG Spice Model v1.0 Last Revised 2011/5/5 DMG8822UTS*SYM=POWMOSN .SUBCKT DMN2075 D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.24 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=25.0 + CJO=28p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS DMG8880LSS (Not Recommended)*---------- DMG8880LSS Spice Model ----------.SUBCKT DMG8880LSS 10 20 30 * TERMINALS: D G SM1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004237 RS 30 3 0.001 RG 20 2 0.97 CGS 2 3 1.154E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.22E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 9.897E+005 ETA = 4.441E-017 VTO = 2.123 + TOX = 6E-008 NSUB = 1E+017 KP = 68.03 KAPPA = 416.1 U0 = 202.1 .MODEL DCGD D CJO = 7.076E-010 VJ = 0.225 M = 0.3502 .MODEL DSUB D IS = 2.798E-010 N = 1.195 RS = 0.003607 BV = 35 CJO = 1.85E-010 VJ = 0.7412 M = 0.6747 .MODEL DLIM D IS = 0.0001 .ENDS*Diodes DMG8880LSS Spice Model v1.0 Last Revised 2010/9/21 DMG9926UDM*SYM=POWMOSN .SUBCKT DMG9926UDM D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.5 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 ********************************************* .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG9926USD*SYM=POWMOSN .SUBCKT DMG9926USD D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.5 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 ********************************************* .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS DMG9933USD*---------- DMG9933USD Spice Model ---------- .SUBCKT DMG9933USD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG9933USD Spice Model v1.0 Last Revised 2011/2/11 DMHC3025LSD*---------- DMHC3025LSD Spice Model ---------- *NMOS .SUBCKT DMHC3025LSD_NMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *PMOS .SUBCKT DMHC3025LSD_PMOS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01769 RS 30 3 0.001 RG 20 2 10.8 CGS 2 3 5.834E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008 + NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877 .MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMHC3025LSD Spice Model v1.0 Last Revised 2013/4/17 DMMT3904W*SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. Matched Transistor .MODEL DI_DMMT3904W NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) DMMT3906***************************************************************************************************************************************** *SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Matched BJTs - Single device of dual .MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114 + IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=504p TR=94.3n EG=1.12 ) ***************************************************************************************************************************************** DMMT3906W*SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_DMMT3906W PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) DMMT5401* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=2 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=E2 * 3=B2 4=C2 * .SUBCKT DMMT5401 1 2 3 4 5 6 Q1 1 2 6 Mod1 Q2 4 3 5 Mod1 * .MODEL Mod1 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 .ENDS * *$ DMMT5551* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=2 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=E2 * 3=B2 4=C2 * .SUBCKT DMMT5551 1 2 3 4 5 6 Q1 1 2 6 Mod1 Q2 4 3 5 Mod1 * .MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 .ENDS * *$ DMMT5551S* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=2 *PIN_ORDER * 1=B1 6=C1 * 2=E2 5=E1 * 3=B2 4=C2 * .SUBCKT DMMT5551S 1 2 3 4 5 6 Q1 6 1 5 Mod1 Q2 4 3 2 Mod1 * .MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 .ENDS * *$ DMN100*SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms Diodes Inc. MOSFET .MODEL DI_DMN100 NMOS( LEVEL=1 VTO=2.00 KP=11.5 GAMMA=2.48 + PHI=.75 LAMBDA=306u RD=21.0m RS=21.0m + IS=550f PB=0.800 MJ=0.460 CBD=199p + CBS=238p CGSO=360n CGDO=300n CGBO=840n ) * -- Assumes default L=100U W=100U -- DMN1019UFDE*---------- DMN1019UFDE Spice Model ---------- .SUBCKT DMN1019UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.003695 RS 30 3 0.001 RG 20 2 1.12 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.085E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.8E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001248 VTO = 0.9106 + TOX = 6E-008 NSUB = 1E+016 KP = 208.4 U0 = 400 KAPPA = 94.25 .MODEL DCGD D CJO = 1.867E-009 VJ = 0.2465 M = 0.4333 .MODEL DSUB D IS = 2.007E-009 N = 1.095 RS = 0.01324 + BV = 20 CJO = 5.112E-012 VJ = 6.535E-009 M = 0.00671 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.81 BV = 5.381 .ENDS *Diodes DMN1019UFDE Spice Model v1.0 Last Revised 2014/4/03 DMN10H120SFG*---------- DMN10H120SFG Spice Model ---------- .SUBCKT DMN10H120SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.05782 RS 30 3 0.001 RG 20 2 1.86 CGS 2 3 5.654E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.75E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 3.378 + TOX = 6E-008 NSUB = 1E+016 KP = 20 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.382E-010 VJ = 0.7 M = 0.7 .MODEL DSUB D IS = 9.862E-009 N = 1.554 RS = 4.441E-010 BV = 125 CJO = 4.436E-010 VJ = 0.7 M = 0.7033 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN10H120SFG Spice Model v1.0 Last Revised 2014/12/09 DMN2004DMK*---------- DMN2004DMK Spice Model ---------- .SUBCKT DMN2004DMK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DMK Spice Model v1.0 Last Revised 2011/10/27 DMN2004DWK*---------- DMN2004DWK Spice Model ---------- .SUBCKT DMN2004DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DWK Spice Model v1.0 Last Revised 2011/10/27 DMN2004K*---------- DMN2004K Spice Model ---------- .SUBCKT DMN2004K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004K Spice Model v1.0 Last Revised 2011/10/27 DMN2004TK*---------- DMN2004TK Spice Model ---------- .SUBCKT DMN2004TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004TK Spice Model v1.0 Last Revised 2011/10/27 DMN2004VK*---------- DMN2004VK Spice Model ---------- .SUBCKT DMN2004VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004VK Spice Model v1.0 Last Revised 2011/10/27 DMN2004WK*---------- DMN2004WK Spice Model ---------- .SUBCKT DMN2004WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004WK Spice Model v1.0 Last Revised 2011/10/27 DMN2005DLP4K*---------- DMN2005DLP4K Spice Model ---------- .SUBCKT DMN2005DLP4K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005DLP4K Spice Model v1.0 Last Revised 2011/11/15 DMN2005K*---------- DMN2005K Spice Model ---------- .SUBCKT DMN2005K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005K Spice Model v1.0 Last Revised 2011/11/15 DMN2005LP4K*---------- DMN2005LP4K Spice Model ---------- .SUBCKT DMN2005LP4K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DDMN2005LP4K Spice Model v1.0 Last Revised 2011/11/15 DMN2005LPK*---------- DMN2005LPK Spice Model ---------- .SUBCKT DMN2005LPK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005LPK Spice Model v1.0 Last Revised 2011/11/15 DMN2009LSS*SRC=DMN2009LSS;DI_DMN2009LSS;MOSFETs N;Enh;20.0V 12.0A 8.00mohms Diodes Inc. MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2009LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 2.80m RS 40 3 1.20m RG 20 2 12.5 CGS 2 3 2.46n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 663p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=60.0m + ETA=2.00m VTO=3.00 KP=274 .MODEL DCGD D (CJO=663p VJ=0.600 M=0.680 .MODEL DSUB D (IS=49.8n N=1.50 RS=37.5m BV=20.0 + CJO=1.28n VJ=0.800 M=0.420 TT=297n .MODEL DLIM D (IS=100U) .ENDS DMN2011UFDE*---------- DMN2011UFDE Spice Model ---------- .SUBCKT DMN2011UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0032 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 1.99E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.25E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.95 + TOX = 6E-008 NSUB = 1E+016 KP = 184 U0 = 400 KAPPA = 80 .MODEL DCGD D CJO = 1.288E-009 VJ = 0.6701 M = 0.6 .MODEL DSUB D IS = 3.806E-009 N = 1.128 RS = 0.007 + BV = 30 CJO = 1.91E-010 VJ = 1E-015 M = 0.03576 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2011UFDE Spice Model v1.0 Last Revised 2014/9/11 DMN2013UFDE*DIODES_INC_SPICE_MODEL DMN2013UFDE *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Mar2104 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2013UFDE 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 4E-3 RS 23 3 Rmod1 3E-3 RG 20 22 1.2 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 1200E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1900E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .005 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.9 TOX=4.5E-8 NSUB=1E+16 KP=190 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=200E-12 N=1 RS=0.0128 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.3e-3 TC2=1E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DMN2016UTS*---------- DMN2016UTS Spice Model ---------- .SUBCKT DMN2016UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01185 RS 30 3 0.001 RG 20 2 1.42 CGS 2 3 1.392E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01011 VTO = 1.042 + TOX = 6E-008 NSUB = 1E+016 KP = 143.4 KAPPA = 20.85 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 7.1E-010 N = 1.3 RS = 0.01232 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2016UTS Spice Model v1.0 Last Revised 2011/1/31 DMN2020LSN*SYM=POWMOSN .SUBCKT DMN2020LSN D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=1943.229m RD 10 1 5m RS 30 3 4m RG 20 2 1.5 CGS 2 3 952p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 550p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16 .MODEL DCGD D CJO=550p VJ=0.350 M=0.410 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=116p VJ=0.120 M=0.380 .MODEL DLIM D IS=100U .ENDS DMN2023UCB4*---------- DMN2023UCB4 Spice Model ---------- .SUBCKT DMN2023UCB4 20 30 40 50 * TERMINALS: G1 S1 G2 S2 X1 10 20 30 Single X2 10 40 50 Single .ENDS *single channel .SUBCKT Single 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007802 RS 30 3 0.001 RG 20 2 1 CGS 2 3 2.306E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.5E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9022 + TOX = 6E-008 NSUB = 1E+016 KP = 202.3 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 9.462E-010 VJ = 1 M = 0.7 .MODEL DSUB D IS = 3.451E-008 N = 4.441E-010 RS = 1.473 BV = 65 CJO = 1.058E-011 VJ = 1 M = 0.7 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2023UCB4 Spice Model v1.0 Last Revised 2015/1/5 DMN2040LTS*---------- DMN2040LTS Spice Model ---------- .SUBCKT DMN2040LTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2040LTS Spice Model v1.0 Last Revised 2010/11/18 DMN2041LSD*---------- DMN2041LSD Spice Model ---------- .SUBCKT DMN2041LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2041LSD Spice Model v1.0 Last Revised 2010/11/18 DMN2050L*SRC=DMN2050L;DI_DMN2050L;MOSFETs N;Enh;20.0V 5.90A 29.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2050L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 12.8m RS 40 3 1.72m RG 20 2 25.4 CGS 2 3 415p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 825p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.83m VTO=1.40 KP=75.8 .MODEL DCGD D (CJO=825p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.5n N=1.50 RS=25.4m BV=20.0 + CJO=215p VJ=0.800 M=0.420 TT=234n .MODEL DLIM D (IS=100U) .ENDS DMN2065UW*DIODES_INC_SPICE_MODEL DMN2065UW *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Apr2013 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2065UW 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 33E-3 RS 23 3 Rmod1 15E-3 RG 20 22 8 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 220E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 760E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.92 TOX=4.5E-8 NSUB=1E+16 KP=75 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.1E-12 N=1.02 RS=0.06 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DMN2075U*SRC=DMN2075U;DI_DMN2075U;MOSFETs N;Enh;20.0V 4.20A 38.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2075U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 17.0m RS 40 3 1.95m RG 20 2 35.7 CGS 2 3 536p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 409p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=1.00 KP=117 .MODEL DCGD D (CJO=409p VJ=0.600 M=0.680 .MODEL DSUB D (IS=17.4n N=1.50 RS=59.5m BV=20.0 + CJO=97.0p VJ=0.800 M=0.420 TT=217n .MODEL DLIM D (IS=100U) .ENDS DMN2100UDM*---------- DMN2100UDM Spice Model ---------- .SUBCKT DMN2100UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2100UDM Spice Model v1.0 Last Revised 2013/6/28 DMN2112SN*SRC=DMN2112SN;DI_DMN2112SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSFET .MODEL DI_DMN2112SN NMOS( LEVEL=1 VTO=1.20 KP=35.3 GAMMA=1.49 + PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m + IS=600f PB=0.800 MJ=0.460 CBD=248p + CBS=298p CGSO=540n CGDO=450n CGBO=1.21u ) * -- Assumes default L=100U W=100U -- DMN2114SN*SRC=DMN2114SN;DI_DMN2114SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSFET .MODEL DI_DMN2114SN NMOS( LEVEL=1 VTO=1.40 KP=21.8 GAMMA=1.74 + PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m + IS=600f PB=0.800 MJ=0.460 CBD=248p + CBS=298p CGSO=540n CGDO=450n CGBO=810n ) * -- Assumes default L=100U W=100U -- DMN21D2UFB*---------- DMN21D2UFB Spice Model ---------- .SUBCKT DMN21D2UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3846 RS 30 3 0.001 RG 20 2 200 CGS 2 3 2.452E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9675 + TOX = 6E-008 NSUB = 1E+016 KP = 2.2 U0 = 400 KAPPA = 38 .MODEL DCGD D CJO = 1.4E-011 VJ = 0.207 M = 0.3876 .MODEL DSUB D IS = 2.291E-010 N = 1.262 RS = 1.472 + BV = 65 CJO = 3.241E-012 VJ = 0.2008 M = 0.2 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN21D2UFB Spice Model v1.0 Last Revised 2012/5/3 DMN2215UDM*SRC=DMN2215UDM;DI_DMN2215UDM;MOSFETs N;Enh;20.0V 2.00A 0.100ohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2215UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 46.5m RS 40 3 3.50m RG 20 2 75.0 CGS 2 3 158p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 211p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=1.00 KP=25.9Meg .MODEL DCGD D (CJO=211p VJ=0.600 M=0.680 .MODEL DSUB D (IS=8.30n N=1.50 RS=0.175 BV=20.0 + CJO=65.6p VJ=0.800 M=0.420 TT=174n .MODEL DLIM D (IS=100U) .ENDS DMN2230U*SRC=DMN2230U;DI_DMN2230U;MOSFETs N;Enh;20.0V 2.00A 0.110ohms Diodes Inc MOSFET .MODEL DI_DMN2230U NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 + PHI=.75 LAMBDA=127u RD=15.4m RS=15.4m + IS=1.00p PB=0.800 MJ=0.460 CBD=46.4p + CBS=55.6p CGSO=360n CGDO=300n CGBO=1.22u ) * -- Assumes default L=100U W=100U -- DMN2300UFB4*DIODES_INC_SPICE_MODEL DMN2300UFB4 N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=30JUL2012 *VERSION=2 .SUBCKT DMN2300UFB4 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 130E-3 RS 23 3 Rmod1 10E-3 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 140E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 140E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=.9095 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=22 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6) .ENDS .SIMULATOR DEFAULT DMN2400UFB4*---------- DMN2400UFB4 Spice Model ---------- .SUBCKT DMN2400UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFB4 Spice Model v1.0 Last Revised 2011/10/27 DMN2400UFD*---------- DMN2400UFD Spice Model ---------- .SUBCKT DMN2400UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFD Spice Model v1.0 Last Revised 2012/11/28 DMN2400UV*---------- DMN2400UV Spice Model ---------- .SUBCKT DMN2400UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UV Spice Model v1.0 Last Revised 2011/10/27 DMN2600UFB*---------- DMN2600UFB Spice Model ---------- .SUBCKT DMN2600UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3301 RS 30 3 0.001 RG 20 2 72.3 CGS 2 3 6.524E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.15E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 6.963E+004 ETA = 1.444E-015 VTO = 0.9928 + TOX = 6E-008 NSUB = 1E+016 KP = 6.867 KAPPA = 0.41 U0 = 400 .MODEL DCGD D CJO = 2.395E-011 VJ = 0.07377 M = 0.279 .MODEL DSUB D IS = 1.816E-009 N = 1.387 RS = 0.2679 BV = 35 CJO = 5.814E-012 VJ = 0.1256 M = 0.2537 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2600UFB Spice Model v1.0 Last Revised 2011/2/9 DMN26D0UDJ*---------- DMN26D0UDJ Spice Model ---------- .SUBCKT DMN26D0UDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNDMN26D0UDJ Spice Model v1.0 Last Revised 2011/1/7 DMN26D0UFB4*---------- DMN26D0UFB4 Spice Model ---------- .SUBCKT DMN26D0UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UFB4 Spice Model v1.0 Last Revised 2011/1/10 DMN26D0UT*---------- DMN26D0UT Spice Model ---------- .SUBCKT DMN26D0UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UT Spice Model v1.0 Last Revised 2011/1/10 DMN2990UDJ*---------- DMN2990UDJ Spice Model ---------- .SUBCKT DMN2990UDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UDJ Spice Model v1.0 Last Revised 2011/8/12 DMN2990UFA*---------- DMN2990UFA Spice Model ---------- *NMOS .SUBCKT DMN2990UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UFA Spice Model v1.0 Last Revised 2012/11/30 DMN3007LSS*---------- DMN3007LSS Spice Model ---------- .SUBCKT DMN3007LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004231 RS 30 3 0.001 RG 20 2 0.7 CGS 2 3 2.344E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.75E+005 ETA = 0.01118 VTO = 2.29 + TOX = 6E-008 NSUB = 7.825E+016 KP = 86.95 KAPPA = 256.4 U0 = 170.2 .MODEL DCGD D CJO = 2.253E-009 VJ = 0.3475 M = 0.4648 .MODEL DSUB D IS = 2.301E-010 N = 1.194 RS = 0.002878 BV = 35 CJO = 6.368E-010 VJ = 0.6415 M = 0.7534 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3007LSS Spice Model v1.1 Last Revised 2011/3/2 DMN3010LFG*---------- DMN3010LFG Spice Model ---------- .SUBCKT DMN3010LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.0045 RS 30 3 0.001 RG 20 2 2.36 CGS 2 3 1.952E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.358 + TOX = 6E-008 NSUB = 1E+016 KP = 129.3 U0 = 400 KAPPA = 4.441E-014 .MODEL DCGD D CJO = 7.076E-010 VJ = 0.6 M = 0.4965 .MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 + BV = 35 CJO = 2.865E-010 VJ = 2.446 M = 1.359 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3010LFG Spice Model v1.0 Last Revised 2014/3/14 DMN3010LSS*SRC=DMN3010LSS;DI_DMN3010LSS;MOSFETs N;Enh;30.0V 16.0A 9.00mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3010LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 3.27m RS 40 3 1.22m RG 20 2 9.37 CGS 2 3 1.68n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.23n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.00 KP=41.4 .MODEL DCGD D (CJO=2.23n VJ=0.600 M=0.680 .MODEL DSUB D (IS=66.4n N=1.50 RS=28.1m BV=30.0 + CJO=485p VJ=0.800 M=0.420 TT=324n .MODEL DLIM D (IS=100U) .ENDS DMN3018SSS*---------- DMN3018SSS Spice Model ---------- .SUBCKT DMN3018SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01061 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 1.924E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-013 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.267 + TOX = 6E-008 NSUB = 1E+016 KP = 33.03 U0 = 400 KAPPA = 1E-015 .MODEL DCGD D CJO = 7.297E-010 VJ = 0.6 M = 0.5206 .MODEL DSUB D IS = 1.439E-013 N = 0.9284 RS = 0.01772 + BV = 20 CJO = 4.24E-010 VJ = 0.65 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3018SSS Spice Model v1.0 Last Revised 2014/7/24 DMN3024LK3* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 *------connections-------D-G-S * .SUBCKT DMN3024LK3 3 4 5 M1 6 20 8 8 Nmod RG 4 2 2 RD 3 6 Rmod1 0.015 RS 8 5 Rmod1 0.005 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 549E-12 C2 2 3 129E-12 C3 15 14 390E-12 C4 16 8 400E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LK3 * *$ DMN3024LSD* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=210JUL2010 *VERSION=1 *------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1 * .SUBCKT DMN3024LSD P1 P2 P3 P4 P5 P6 P7 P8 *Device1 M11 106 103 108 108 Nmod R12 P2 102 2 R11 104 106 Rmod1 0.015 R13 108 105 Rmod1 0.005 R15 104 105 100E6 R16 102 105 100E6 D11 105 104 Dmod1 I11 108 121 1 V11 122 121 1 R17 122 108 Rmod2 1 E11 102 103 121 108 1 E12 113 108 102 108 1 E13 114 108 104 108 1 C11 102 108 549E-12 C12 102 104 129E-12 C13 115 114 390E-12 C14 116 108 400E-12 S11 102 115 114 113 SMOD1 S12 113 115 114 113 SMOD2 S13 116 113 113 108 SMOD3 S14 116 102 113 108 SMOD4 L11 P7 104 1E-9 L12 P1 105 1E-9 R18 P7 P8 0.001 *Device2 M21 206 203 208 208 Nmod R22 P4 202 2 R21 204 206 Rmod1 0.015 R23 208 205 Rmod1 0.005 R25 204 205 100E6 R26 202 205 100E6 D21 205 204 Dmod1 I21 208 221 1 V21 222 221 1 R27 222 208 Rmod2 1 E21 202 203 221 208 1 E22 213 208 202 208 1 E23 214 208 204 208 1 C21 202 208 549E-12 C22 202 204 129E-12 C23 215 214 390E-12 C24 216 208 400E-12 S21 202 215 214 213 SMOD1 S22 213 215 214 213 SMOD2 S23 216 213 213 208 SMOD3 S24 216 202 213 208 SMOD4 L21 P5 204 1E-9 L22 P3 205 1E-9 R28 P5 P6 0.001 * .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LSD * *$ DMN3024LSS* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 *------connections-------D-G-S * .SUBCKT DMN3024LSS 3 4 5 M1 6 20 8 8 Nmod RG 4 2 2 RD 3 6 Rmod1 0.015 RS 8 5 Rmod1 0.005 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 549E-12 C2 2 3 129E-12 C3 15 14 390E-12 C4 16 8 400E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS DMN3024LSS * *$ DMN3025LFG*---------- DMN3025LFG Spice Model ---------- .SUBCKT DMN3025LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01437 RS 30 3 0.001 RG 20 2 1.84 CGS 2 3 4.55E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222 + TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3025LFG Spice Model v1.0 Last Revised 2013/4/17 DMN3029LFG*---------- DMN3029LFG Spice Model ---------- .SUBCKT DMN3029LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.006868 RS 30 3 0.001 RG 20 2 1.92 CGS 2 3 5.089E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.8E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0.001 VTO = 2.23 + TOX = 6E-008 NSUB = 1E+016 KP = 33.14 U0 = 400 KAPPA = 0.001011 .MODEL DCGD D CJO = 2.68E-010 VJ = 0.204 M = 0.3131 .MODEL DSUB D IS = 1.168E-010 N = 1.244 RS = 0.00323 BV = 35 CJO = 1.898E-010 VJ = 0.2902 M = 0.4412 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3029LFG Spice Model v1.0 Last Revised 2011/8/16 DMN3030LSS*---------- DMN3030LSS Spice Model ---------- .SUBCKT DMN3030LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3030LSS Spice Model v1.0 Last Revised 2011/5/30 DMN3033LDM*---------- DMN3033LDM Spice Model ---------- .SUBCKT DMN3033LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005805 RS 30 3 0.001 RG 20 2 1.32 CGS 2 3 6.922E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028 + TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200 .MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267 .MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011 VJ = 0.4558 M = 0.5515 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3033LDM Spice Model V2.0 Last Revised 2013/12/10 DMN3033LSD*SRC=DMN3033LSD;DI_DMN3033LSD;MOSFETs N;Enh;30.0V 6.90A 22.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3033LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 9.45m RS 40 3 1.55m RG 20 2 21.7 CGS 2 3 633p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 843p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=60.0m + ETA=2.00m VTO=3.00 KP=13.5 .MODEL DCGD D (CJO=843p VJ=0.600 M=0.680 .MODEL DSUB D (IS=28.6n N=1.50 RS=65.2m BV=30.0 + CJO=200p VJ=0.800 M=0.420 TT=252n .MODEL DLIM D (IS=100U) .ENDS DMN3033LSN*SRC=DMN3033LSN;DI_DMN3033LSN;MOSFETs N;Enh;30.0V 6.00A 30.0mohms DIODES INC MOSFET .MODEL DI_DMN3033LSN NMOS( LEVEL=1 VTO=2.10 KP=3.12u GAMMA=2.60 + PHI=.75 LAMBDA=56.2u RD=4.20m RS=4.20m + IS=3.00p PB=0.800 MJ=0.460 CBD=92.7p + CBS=111p CGSO=1.30u CGDO=1.08u CGBO=5.17u ) * -- Assumes default L=100U W=100U -- DMN3051L*SRC=DMN3051L;DI_DMN3051L;MOSFETs N;Enh;30.0V 5.80A 38.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3051L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 17.0m RS 40 3 1.95m RG 20 2 47.0 CGS 2 3 343p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 370p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=15.6 .MODEL DCGD D (CJO=370p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.1n N=1.50 RS=70.7m BV=30.0 + CJO=132p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS DMN3051LDM*SRC=DMN3051LDM;DI_DMN3051LDM;MOSFETs N;Enh;30.0V 4.00A 38.0mohms *SYM=POWMOSN .SUBCKT DI_DMN3051LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 17.0m RS 40 3 1.95m RG 20 2 47.0 CGS 2 3 343p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 370p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=16.9 .MODEL DCGD D (CJO=370p VJ=0.600 M=0.680 .MODEL DSUB D (IS=16.6n N=1.50 RS=0.102 BV=30.0 + CJO=132p VJ=0.800 M=0.420 TT=214n .MODEL DLIM D (IS=100U) .ENDS DMN3052L (Not Recommended)*SRC=DMN3052L;DI_DMN3052L;MOSFETs N;Enh;30.0V 5.40A 32.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3052L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 14.2m RS 40 3 1.80m RG 20 2 27.8 CGS 2 3 473p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 374p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=1.20 KP=40.0 .MODEL DCGD D (CJO=374p VJ=0.600 M=0.680 .MODEL DSUB D (IS=22.4n N=1.50 RS=83.3m BV=30.0 + CJO=125p VJ=0.800 M=0.420 TT=234n .MODEL DLIM D (IS=100U) .ENDS DMN3052LSS (Not Recommended)*SRC=DMN3052LSS;DI_DMN3052LSS;MOSFETs N;Enh;30.0V 7.10A 30.0mohms DIodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3052LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 13.2m RS 40 3 1.75m RG 20 2 21.1 CGS 2 3 471p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 384p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=1.20 KP=38.0 .MODEL DCGD D (CJO=384p VJ=0.600 M=0.680 .MODEL DSUB D (IS=29.5n N=1.50 RS=57.7m BV=30.0 + CJO=125p VJ=0.800 M=0.420 TT=254n .MODEL DLIM D (IS=100U) .ENDS DMN3110S*---------- DMN3110S Spice Model ---------- .SUBCKT DMN3110S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01593 RS 30 3 0.001 RG 20 2 1.4 CGS 2 3 2.711E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.2E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227 + TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405 .MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ = 0.4101 M = 0.9 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN3110S Spice Model v1.0 Last Revised 2011/8/15 DMN3112S (Not Recommended)*SRC=DMN3112S;DI_DMN3112S;MOSFETs N;Enh;30.0V 5.80A 57.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3112S 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 26.1m RS 40 3 2.42m RG 20 2 105 CGS 2 3 218p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 228p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=2.00m VTO=2.20 KP=10.2 .MODEL DCGD D (CJO=228p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.1n N=1.50 RS=60.3m BV=30.0 + CJO=83.9p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS DMN3112SSS (Not Recommended)*SRC=DMN3112SSS;DI_DMN3112SSS;MOSFETs N;Enh;30.0V 6.00A 57.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3112SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 26.1m RS 40 3 2.42m RG 20 2 56.0 CGS 2 3 218p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 458p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.93m VTO=2.20 KP=4.11 .MODEL DCGD D (CJO=458p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.9n N=1.50 RS=75.0m BV=30.0 + CJO=128p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS DMN3115UDM*SRC=DMN3115UDM;DI_DMN3115UDM;MOSFETs N;Enh;30.0V 3.20A 60.0mohms Diodes Inc MOSFET .MODEL DI_DMN3115UDM NMOS( LEVEL=1 VTO=1.00 KP=10.7 GAMMA=1.24 + PHI=.75 LAMBDA=50.9u RD=8.40m RS=8.40m + IS=1.60p PB=0.800 MJ=0.460 CBD=76.2p + CBS=91.4p CGSO=648n CGDO=540n CGBO=3.57u ) * -- Assumes default L=100U W=100U -- DMN3150L*SRC=DMN3150L;DI_DMN3150L;MOSFETs N;Enh;28.0V 3.10A 85.0mohms DIODES INC MOSFET .MODEL DI_DMN3150L NMOS( LEVEL=1 VTO=1.40 KP=2.90u GAMMA=1.74 + PHI=.75 LAMBDA=145u RD=11.9m RS=11.9m + IS=1.55p PB=0.800 MJ=0.460 CBD=64.7p + CBS=77.6p CGSO=576n CGDO=480n CGBO=1.99u ) * -- Assumes default L=100U W=100U -- DMN3150LW*SRC=DMN3150LW;DI_DMN3150LW;MOSFETs N;Enh;28.0V 1.60A 88.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN3150LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 40.8m RS 40 3 3.20m RG 20 2 93.7 CGS 2 3 257p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 219p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=58.3k THETA=80.0m + ETA=2.00m VTO=1.40 KP=21.8 .MODEL DCGD D (CJO=219p VJ=0.600 M=0.680 .MODEL DSUB D (IS=6.64n N=1.50 RS=0.256 BV=28.0 + CJO=85.0p VJ=0.800 M=0.420 TT=162n .MODEL DLIM D (IS=100U) .ENDS DMN3190LDW* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=21/03/2014 *VERSION=1 .SUBCKT DMN3190LDW 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 50E-3 RS 23 3 Rmod1 100E-3 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 90E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 84E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.5 TOX=7.3E-8 NSUB=6E+16 KP=7.5 NFS=2.8E+12 IS=.5E-15 N=10) .MODEL DCGD D (CJO =26E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 1E-13 N=1.0 RS=0.07 BV=35 CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DMN31D5UFZ*---------- DMN31D5UFZ Spice Model ---------- .SUBCKT DMN31D5UFZ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.7969 RS 30 3 0.001 RG 20 2 219 CGS 2 3 2.124E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0 VTO = 0.7496 + TOX = 6E-008 NSUB = 1E+016 KP = 1.745 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 1.072E-011 VJ = 0.111 M = 0.4766 .MODEL DSUB D IS = 8.906E-008 N = 1.859 RS = 0.9141 BV = 35 CJO = 1.64E-012 VJ = 0.1 M = 0.1 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN31D5UFZ Spice Model v1.0 Last Revised 2015/3/11 DMN3200U*SRC=DMN3200U;DI_DMN3200U;MOSFETs N;Enh;30.0V 2.20A 90.0mohms Diodes Inc MOSFET .MODEL DI_DMN3200U NMOS( LEVEL=1 VTO=1.00 KP=11.4 GAMMA=1.24 + PHI=.75 LAMBDA=139u RD=12.6m RS=12.6m + IS=1.10p PB=0.800 MJ=0.460 CBD=103p + CBS=123p CGSO=420n CGDO=350n CGBO=2.13u ) * -- Assumes default L=100U W=100U -- DMN32D2LDF*SRC=DMN32D2LDF;DI_DMN32D2LDF;MOSFETs N;Enh;30.0V 0.400A 1.20ohms Diodes Inc MOSFET .MODEL DI_DMN32D2LDF NMOS( LEVEL=1 VTO=1.20 KP=0.100 GAMMA=1.49 + PHI=.75 LAMBDA=555u RD=0.168 RS=0.168 + IS=200f PB=0.800 MJ=0.460 CBD=13.1p + CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=311n ) * -- Assumes default L=100U W=100U -- DMN32D2LFB4*SRC=DMN32D2LFB4;DMN32D2LFB4_DI;MOSFETs N;Enh;30.0V 0.300A 2.20ohms Diodes Inc MOSFET .MODEL DMN32D2LFB4_DI NMOS( LEVEL=1 VTO=1.20 KP=0.100 GAMMA=1.49 + PHI=.75 LAMBDA=416u RD=0.308 RS=0.308 + IS=150f PB=0.800 MJ=0.460 CBD=13.1p + CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=311n ) * -- Assumes default L=100U W=100U -- DMN32D2LV*SRC=DMN32D2LV;???;MOSFETs N;Enh;30.0V 0.400A 1.20ohms Diodes, Inc. .MODEL ??? NMOS( LEVEL=1 VTO=-1.20 KP=0.100 GAMMA=1.49 + PHI=.75 LAMBDA=556u RD=0.168 RS=0.168 + IS=200f PB=0.800 MJ=0.460 CBD=13.1p + CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=1.37u ) * -- Assumes default L=100U W=100U -- DMN3300U* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=02NOV2010 *VERSION=2 * .SUBCKT DMN3300U 10 20 30 * TERMINALS: D G S M1 10 20 30 30 DMOS L=100U W=100U .MODEL DMOS NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 + PHI=.75 LAMBDA=127u RD=21.0m RS=21.0m + IS=1.00p PB=0.800 MJ=0.460 CBD=39.7p + CBS=47.7p CGSO=276n CGDO=230n CGBO=1.42u ) .ENDS * *$ DMN3404L*DIODES_INC_SPICE_MODEL DMN3404L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=22Jan2013 *VERSION=1.1 .SUBCKT DMN3404L 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 10E-3 RS 23 3 Rmod1 12E-3 RG 20 22 1.8 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 320E-12 EGD 12 0 2 1 1 REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 500E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=2 TOX=6.4E-8 NSUB=5E+16 KP=33 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 162E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=50E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL DMN3730U*DIODES_INC_SPICE_MODEL DMN3730U N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1DEC2011 *VERSION=1 .SUBCKT DMN3730 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 10E-3 RG 20 22 70 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 120E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 90E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=.87 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=35 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6) .ENDS .SIMULATOR DEFAULT DMN3730UFB4*DIODES_INC_SPICE_MODEL DMN3730U N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1DEC2011 *VERSION=1 .SUBCKT DMN3730 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 10E-3 RG 20 22 70 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 120E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 90E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=.87 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=35 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6) .ENDS .SIMULATOR DEFAULT DMN3900UFA*---------- DMN3900UFA Spice Model ---------- .SUBCKT DMN3900UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3262 RS 30 3 0.001 RG 20 2 467 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.031E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 0.9767 + TOX = 6E-008 NSUB = 1E+016 KP = 3.291 U0 = 400 KAPPA = 8.238 .MODEL DCGD D CJO = 2.804E-011 VJ = 0.04193 M = 0.3358 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 3.048E-012 VJ = 0.1 M = 0.1882 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 7.551E-009 N = 22.09 BV = 2.453 .ENDS *Diodes DMN3900UFA Spice Model v2.0 Last Revised 2014/2/18 DMN4010LFG*---------- DMN4010LFG Spice Model ---------- .SUBCKT DMN4010LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005483 RS 30 3 0.001 RG 20 2 1.64 CGS 2 3 1.736E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.58E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.274 + TOX = 6E-008 NSUB = 1E+017 KP = 95.33 KAPPA = 24.52 U0 = 400 .MODEL DCGD D CJO = 8.624E-010 VJ = 0.3663 M = 0.4967 .MODEL DSUB D IS = 2.495E-010 N = 1.227 RS = 0.003519 + BV = 45 CJO = 7.592E-010 VJ = 0.3012 M = 0.5211 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4010LFG Spice Model v1.0 Last Revised 2014/8/04 DMN4026SSD*---------- DMN4026SSD Spice Model ---------- .SUBCKT DMN4026SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008754 RS 30 3 0.001 RG 20 2 1.7 CGS 2 3 1.04E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.455 + TOX = 6E-008 NSUB = 1E+017 KP = 49.07 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 2.703E-010 VJ = 0.2734 M = 0.3551 .MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 + BV = 50 CJO = 2.302E-010 VJ = 0.3812 M = 0.5232 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4026SSD Spice Model v1.0 Last Revised 2014/2/5 DMN4031SSD*---------- DMN4031SSD Spice Model ---------- .SUBCKT DMN4031SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.001 RS 30 3 0.009995 RG 20 2 1.56 CGS 2 3 8.311E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 3.195 + TOX = 6E-008 NSUB = 1E+016 KP = 26.57 U0 = 400 KAPPA = 32.33 .MODEL DCGD D CJO = 3.144E-010 VJ = 0.09587 M = 0.3239 .MODEL DSUB D IS = 1.133E-011 N = 1.136 RS = 1.044E-015 BV = 40 CJO = 1.281E-010 VJ = 0.3722 M = 0.5383 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN4031SSD Spice Model v1.0 Last Revised 2011/8/15 DMN4468LSS*SRC=DMN4468LSS;DI_DMN4468LSS;MOSFETs N;Enh;30.0V 8.70A 14.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN4468LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.65m RS 40 3 1.35m RG 20 2 20.0 CGS 2 3 852p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 108p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.61m VTO=1.95 KP=10.7 .MODEL DCGD D (CJO=108p VJ=0.600 M=0.680 .MODEL DSUB D (IS=36.1n N=1.50 RS=21.8m BV=30.0 + CJO=208p VJ=0.800 M=0.420 TT=253n .MODEL DLIM D (IS=100U) .ENDS DMN4800LSS*SRC=DMN4800LSS;DI_DMN4800LSS;MOSFETs N;Enh;30.0V 10.0A 14.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN4800LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.65m RS 40 3 1.35m RG 20 2 15.0 CGS 2 3 775p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 162p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=1.40m VTO=1.60 KP=13.8 .MODEL DCGD D (CJO=162p VJ=0.600 M=0.680 .MODEL DSUB D (IS=41.5n N=1.50 RS=19.0m BV=30.0 + CJO=313p VJ=0.800 M=0.420 TT=253n .MODEL DLIM D (IS=100U) .ENDS DMN5010VAK*SRC=DMN5010VAK;DI_DMN5010VAK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc. N Channel MOSFET .MODEL DI_DMN5010VAK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- DMN55D0UT*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFET .MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24 + PHI=.75 LAMBDA=133u RD=0.560 RS=0.560 + IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p + CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n ) * -- Assumes default L=100U W=100U -- DMN5L06DMK*SRC=DMN5L06DMK;DI_DMN5L06DMK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc. N Channel MOSFET .MODEL DI_DMN5L06DMK NMOS( LEVEL=1 VTO=1.20 KP=0.200 GAMMA=1.49 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- DMN5L06DWK*---------- DMN5L06DWK Spice Model ---------- .SUBCKT DMN5L06DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06DWK Spice Model v1.0 Last Revised 2013/2/18 DMN5L06K*---------- DMN5L06K Spice Model ---------- .SUBCKT DMN5L06K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06K Spice Model v1.0 Last Revised 2013/2/18 DMN5L06TK*---------- DMN5L06TK Spice Model ---------- .SUBCKT DMN5L06TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06TK Spice Model v1.0 Last Revised 2013/2/18 DMN5L06VAK*SRC=DMN5L06VK;DI_DMN5L06VK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc MOSFET .MODEL DI_DMN5L06VK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- DMN5L06VK*SRC=DMN5L06VK;DI_DMN5L06VK;MOSFETs N;Enh;50.0V 0.280A 2.00ohms Diodes Inc MOSFET .MODEL DI_DMN5L06VK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=117u RD=0.280 RS=0.280 + IS=140f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- DMN5L06WK*---------- DMN5L06WK Spice Model ---------- .SUBCKT DMN5L06WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.449 RS 30 3 0.001 RG 20 2 127 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.688E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.189 TOX = 6E-008 NSUB = 1E+016 KP = 1.163 U0 = 400 KAPPA = 14.08 .MODEL DCGD D CJO = 1.808E-011 VJ = 0.134 M = 0.369 .MODEL DSUB D IS = 247.6E-9 N = 1.566 RS = 0.358 EG = 0.06341 XTI = 8.194 + TNOM = 217.5 BV = 70 CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 2.728E-008 N = 66.22 BV = 5.068 .ENDs *Diodes DMN5L06WK Spice Model v1.0 Last Revised 2013/2/18 DMN6013LFG*---------- DMN6013LFG Spice Model ---------- .SUBCKT DMN6013LFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.005556 RS 30 3 0.001 RG 20 2 1.49 CGS 2 3 2.658E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.56E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.766 + TOX = 6E-008 NSUB = 1E+016 KP = 67.2 U0 = 400 KAPPA = 38.59 .MODEL DCGD D CJO = 1.231E-009 VJ = 0.6368 M = 0.5502 .MODEL DSUB D IS = 5E-011 N = 1.108 RS = 0.002574 + BV = 70 CJO = 5.209E-010 VJ = 0.9791 M = 0.89 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6013LFG Spice Model v1.0 Last Revised 2014/9/15 DMN601DMK*---------- DMN601DMK Spice Model ---------- .SUBCKT DMN601DMK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601DMK Spice Model v1.0 Last Revised 2012/4/25 DMN601DWK*---------- DMN601DWK Spice Model ---------- .SUBCKT DMN601DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601DWK Spice Model v1.0 Last Revised 2012/4/25 DMN601K*---------- DMN601K Spice Model ---------- .SUBCKT DMN601K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601K Spice Model v1.0 Last Revised 2012/4/25 DMN601TK*---------- DMN601TK Spice Model ---------- .SUBCKT DMN601TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601TK Spice Model v1.0 Last Revised 2012/4/25 DMN601VK*---------- DMN601VK Spice Model ---------- .SUBCKT DMN601VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601VK Spice Model v1.0 Last Revised 2012/4/25 DMN601WK*---------- DMN601WK Spice Model ---------- .SUBCKT DMN601WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.6 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN601WK Spice Model v1.0 Last Revised 2012/4/25 DMN6040SFDE*---------- DMN6040SFDE Spice Model ---------- .SUBCKT DMN6040SFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SFDE Spice Model v1.0 Last Revised 2012/11/30 DMN6040SK3*---------- DMN6040SK3 Spice Model ---------- .SUBCKT DMN6040SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SK3 Spice Model v1.0 Last Revised 2013/04/17 DMN6040SSD*---------- DMN6040SSD Spice Model ---------- .SUBCKT DMN6040SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSD Spice Model v1.0 Last Revised 2012/11/30 DMN6040SSS*---------- DMN6040SSS Spice Model ---------- .SUBCKT DMN6040SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SSS Spice Model v1.0 Last Revised 2012/11/30 DMN6040SVT*---------- DMN6040SVT Spice Model ---------- .SUBCKT DMN6040SVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02611 RS 30 3 0.001 RG 20 2 1.18 CGS 2 3 1.277E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 7.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.01616 VTO = 2.642 + TOX = 6E-008 NSUB = 1E+016 KP = 47.18 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.638E-010 VJ = 0.3003 M = 0.4785 .MODEL DSUB D IS = 1.146E-011 N = 1.109 RS = 0.008602 BV = 65 CJO = 1.445E-010 VJ = 0.3616 M = 0.5674 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6040SVT Spice Model v1.0 Last Revised 2012/3/26 DMN6066SSD*DIODES_INC_SPICE_MODEL DMN6066SSD N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2011 *VERSION=1 .SUBCKT DMN6066 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 420E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 420E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 220E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS .SIMULATOR DEFAULT DMN6068LK3*DIODES_INC_SPICE_MODEL DMN6068LK3 N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=21Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN6068 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 380E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 426E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 2n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6) .ENDS DMN6140L*---------- DMN6140L Spice Model ---------- .SUBCKT DMN6140L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.06658 RS 30 3 0.001 RG 20 2 0.65 CGS 2 3 3.184E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.4E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 + VTO = 1.88 TOX = 6E-008 NSUB = 1E+016 KP = 5.783 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.846E-010 VJ = 0.6 M = 0.6135 .MODEL DSUB D IS = 2.247E-010 N = 1.308 RS = 0.02648 BV = 65 CJO = 6.828E-012 VJ = 0.7 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN6140L Spice Model v1.0 Last Revised 2014/11/14 DMN62D0LFB*DIODES_INC_SPICE_MODEL DMN62D0LFB N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=07Aug2012 *VERSION=1 .SUBCKT DMN62D0LFB 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 1.1 RS 23 3 Rmod1 .3 RG 20 22 126 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 40E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 40E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.003 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.15 TOX=5E-8 NSUB=3E+15 KP=3.8 NFS=12E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 15E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 5E-13 N=1.1 RS=0.06 BV=66 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=.1e-3 TC2=6E-6) .ENDS DMN62D0LFD*---------- DMN62D0LFD Spice Model ---------- .SUBCKT DMN62D0LFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.79E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 3.4E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 1.283E-011 VJ = 0.6 M = 0.4065 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 8.365E-012 VJ = 0.7198 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D0LFD Spice Model v1.1 Last Revised 2014/12/8 DMN62D1SFB*---------- DMN62D1SFB Spice Model ---------- .SUBCKT DMN62D1SFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.8574 RS 30 3 0.001 RG 20 2 81.24 CGS 2 3 3.774E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8.43E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 1.584 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9918 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 2.818E-011 VJ = 0.4 M = 0.5368 .MODEL DSUB D IS = 6.562E-012 N = 1.326 RS = 0.08305 BV = 65 CJO = 5.117E-012 VJ = 0.4 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN62D1SFB Spice Model v1.0 Last Revised 2015/2/26 DMN63D8LDW*---------- DMN63D8LDW Spice Model ---------- .SUBCKT DMN63D8LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LDW Spice Model v1.0 Last Revised 2014/10/15 DMN63D8LV*---------- DMN63D8LV Spice Model ---------- .SUBCKT DMN63D8LV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.906 RS 30 3 0.001 RG 20 2 62 CGS 2 3 2.111E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.592 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5626 U0 = 400 KAPPA = 10 .MODEL DCGD D CJO = 1.249E-011 VJ = 0.7186 M = 0.6 .MODEL DSUB D IS = 1.685E-012 N = 1.251 RS = 0.2452 BV = 65 CJO = 6.828E-012 VJ = 0.6 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN63D8LV Spice Model v1.0 Last Revised 2014/10/15 DMN65D8L*---------- DMN65D8L Spice Model ---------- .SUBCKT DMN65D8L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8L Spice Model v1.0 Last Revised 2012/7/23 DMN65D8LDW*---------- DMN65D8LDW Spice Model ---------- .SUBCKT DMN65D8LDW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LDW Spice Model v1.0 Last Revised 2012/7/23 DMN65D8LFB*---------- DMN65D8LFB Spice Model ---------- .SUBCKT DMN65D8LFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LFB Spice Model v1.0 Last Revised 2012/7/23 DMN65D8LW*---------- DMN65D8LW Spice Model ---------- .SUBCKT DMN65D8LW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 2.175 RS 30 3 0.001 RG 20 2 79.9 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 2.011E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001583 VTO = 1.595 + TOX = 6E-008 NSUB = 1E+016 KP = 0.58 U0 = 400 KAPPA = 4.069 .MODEL DCGD D CJO = 1.646E-011 VJ = 0.1277 M = 0.4 .MODEL DSUB D IS = 4.551E-009 N = 1.836 RS = 0.1357 + CJO = 2.877E-012 VJ = 1.307E-009 M = 0.03355 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.223E-008 N = 54.79 BV = 5.385 .ENDS *Diodes DMN65D8LW Spice Model v1.0 Last Revised 2012/7/23 DMN66D0LDW*SRC=DMN66D0LDW;DI_DMN66D0LDW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc MOSFET .MODEL DI_DMN66D0LDW NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48 + PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700 + IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p + CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n ) * -- Assumes default L=100U W=100U -- DMN66D0LT*---------- DMN66D0LT Spice Model ---------- .SUBCKT DMN66D0LT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1.631 RS 30 3 0.001 RG 20 2 133 CGS 2 3 2.711E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 2.628E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596 + TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA = 5.648E-007 .MODEL DCGD D CJO = 2.628E-011 VJ = 0.009081 M = 0.2561 .MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012 VJ = 1 M = 0.6474 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN66D0LT Spice Model v1.0 Last Revised 2011/1/13 DMN66D0LW*SRC=DMN66D0LW;DI_DMN66D0LW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc MOSFET .MODEL DI_DMN66D0LW NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48 + PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700 + IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p + CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n ) * -- Assumes default L=100U W=100U -- DMP1012UCB9*---------- DMP1012UCB9 Spice Model ---------- .SUBCKT DMP1012UCB9 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.003332 RS 30 3 0.001 RG 20 2 2.6 CGS 2 3 4.721E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7.15E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 107.4 KAPPA = 49.86 VTO = -0.954 .MODEL DCGD D CJO = 3.351E-010 VJ = 0.2 M = 0.1104 .MODEL DSUB D IS = 2.487E-010 N = 1.095 RS = 0.01511 BV = 20 CJO = 5.861E-010 VJ = 0.6 M = 0.2823 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1012UCB9 Spice Model v1.0 Last Revised 2015/4/27 DMP1022UFDE*---------- DMP1022UFDE Spice Model ---------- .SUBCKT DMP1022UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.007221 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 2.328E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 74.03 KAPPA = 52.83 VTO = -0.8598 .MODEL DCGD D CJO = 1.939E-009 VJ = 0.5312 M = 0.4755 .MODEL DSUB D IS = 6.822E-009 N = 1.158 RS = 0.03057 BV = 15 CJO = 3.094E-010 VJ = 0.5406 M = 0.6337 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1022UFDE Spice Model v1.0 Last Revised 2012/4/16 DMP1045UFY4*---------- DMP1045UFY4 Spice Model ---------- .SUBCKT DMP1045UFY4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01808 RS 30 3 0.001 RG 20 2 13.4 CGS 2 3 1.058E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.1E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 35.11 KAPPA = 19.32 VTO = -0.7328 .MODEL DCGD D CJO = 1E-009 VJ = 0.587 M = 0.4707 .MODEL DSUB D IS = 1.513E-008 N = 1.192 RS = 0.09064 + BV = 40 CJO = 1.315E-010 VJ = 0.6767 M = 0.9842 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP1045UFY4 Spice Model v1.0 Last Revised 2012/11/28 DMP10H400SK3*---------- DMP10H400SK3 Spice Model ---------- .SUBCKT DMP10H400SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1739 RS 30 3 0.001 RG 20 2 12.5 CGS 2 3 1.213E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193 .MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376 .MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150 + CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP10H400SK3 Spice Model v1.0 Last Revised 2014/02/21 DMP2004DMK*SRC=DMP2004DMK;DI_DMP2004DMK;MOSFETs P;Enh;20.0V 0.550A 0.900ohms DIODES INC MOSFET .MODEL DI_DMP2004DMK PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.126 RS=0.126 + IS=275f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- DMP2004DWK*SRC=DMP2004DWK;DI_DMP2004DWK;MOSFETs P;Enh;20.0V 0.430A 0.900ohms DIODES INC MOSFET .MODEL DI_DMP2004DWK PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.126 RS=0.126 + IS=215f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- DMP2004K*SRC=DMP2004K;DI_DMP2004K;MOSFETs P;Enh;20.0V 0.600A 0.900ohms DIODES INC MOSFET .MODEL DI_DMP2004K PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.126 RS=0.126 + IS=300f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- DMP2004TK*SRC=DMP2004TK;DI_DMP2004TK;MOSFETs P;Enh;20.0V 0.430A 2.40ohms DIODES INC MOSFET .MODEL DI_DMP2004TK PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=447u RD=0.336 RS=0.336 + IS=215f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- DMP2004VK* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=01/03/2010 *VERSION=2 *------connections-------D_G_S * .SUBCKT DMP2004VK 1 2 3 M1 1 2 3 3 Pmod1 M2 1 2 3 3 Pmod2 M3 1 2 3 3 Pmod3 .MODEL Pmod1 PMOS(LEVEL=1 VTO=-0.95 KP=1.5 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.5 RS=0.126 + IS=265f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u) .MODEL Pmod2 PMOS(LEVEL=1 VTO=-0.75 KP=0.15 RD=50 RS=13) .MODEL Pmod3 PMOS(LEVEL=1 VTO=-0.55 KP=0.015 RD=500 RS=130) .ENDS * *$ DMP2004WK*SRC=DMP2004WK;DI_DMP2004WK;MOSFETs P;Enh;20.0V 0.400A 0.900ohms DIODES INC MOSFET .MODEL DI_DMP2004WK PMOS( LEVEL=1 VTO=-1.00 KP=0.200 GAMMA=1.24 + PHI=.75 LAMBDA=208u RD=0.126 RS=0.126 + IS=200f PB=0.800 MJ=0.460 CBD=40.6p + CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u ) * -- Assumes default L=100U W=100U -- DMP2006UFG*---------- DMP2006UFG Spice Model ---------- .SUBCKT DMP2006UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.001238 RS 30 3 0.001 RG 20 2 3.74 CGS 2 3 5.072E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 175.7 KAPPA = 109 VTO = -0.848 .MODEL DCGD D CJO = 5.158E-009 VJ = 0.1101 M = 0.4567 .MODEL DSUB D IS = 4.484E-008 N = 1.181 RS = 0.006778 + BV = 30 CJO = 6.249E-010 VJ = 0.1841 M = 0.4836 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2006UFG Spice Model v1.0 Last Revised 2014/09/10 DMP2008UFG*DIODES_INC_SPICE_MODEL DMP2008UFG *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=23Jul2013 *VERSION=1 ** Imported from: C:UserssuppuluriDesktopDMP2008UFG.txt .SUBCKT DMP2008UFG 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 1E-3 RS 23 3 Rmod1 5E-3 RG 20 22 6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 6500E-12 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 10500E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 0.000017 Rta 30 23 1E-20 *LS 30 23 4n .MODEL Pmod1 PMOS (LEVEL=3 VTO=-.8 TOX=20E-9 NSUB=1E+16 KP=200 NFS=.18E+12 IS=1E-15 N=10) .MODEL DCGD D (CJO = 1000E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = 15E-10 N=1 RS=0.01 BV=20 CJO=1000p VJ=.45 M=0.5 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3.9e-6 TC2=6E-6) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DMP2012SN*SRC=DMP2012SN;DI_DMP2012SN;MOSFETs P;Enh;20.0V 0.700A 0.370ohms Diodes Inc. MOSFET .MODEL DI_DMP2012SN PMOS( LEVEL=1 VTO=-1.20 KP=5.62u GAMMA=1.49 + PHI=.75 LAMBDA=365u RD=51.8m RS=51.8m + IS=350f PB=0.800 MJ=0.460 CBD=232p + CBS=278p CGSO=600n CGDO=500n CGBO=700n ) * -- Assumes default L=100U W=100U -- DMP2018LFK*---------- DMP2018LFK Spice Model ---------- .SUBCKT DMP2018LFK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.009515 RS 30 3 0.001 RG 20 2 6.2 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.617E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.9E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 + NSUB = 1E+016 KP = 136 KAPPA = 1E-012 VTO = -0.8589 .MODEL DCGD D CJO = 1.71E-009 VJ = 0.07406 M = 0.3216 .MODEL DSUB D IS = 7.934E-009 N = 1.159 RS = 0.01941 BV = 40 CJO = 1.805E-009 + VJ = 0.2466 M = 0.3518 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 .ENDS *Diodes DMP2018LFK Spice Model v1.0 Last Revised 2012/9/4 DMP2022LSS*SRC=DMP2022LSS;DI_DMP2022LSS;MOSFETs P;Enh;20.0V 10.0A 13.0ohms Diodes Inc. MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2022LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 6.17 RS 40 3 0.326 RG 20 2 15.0 CGS 2 3 2.33n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 754p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.40m VTO=-1.10 KP=1.95Meg .MODEL DCGD D (CJO=754p VJ=0.600 M=0.680 .MODEL DSUB D (IS=41.5n N=1.50 RS=45.0m BV=20.0 + CJO=1.45n VJ=0.800 M=0.420 TT=297n .MODEL DLIM D (IS=100U) .ENDS DMP2035U*SYM=POWMOSP .SUBCKT DMP2035U D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 PMOS L=0.6U W=0.9 RD 10 1 15m RS 30 3 4m RG 20 2 9.45 CGS 2 3 1.42n EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 598p R1 13 30 1.00 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1.00 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k + ETA=0.1m VTO=-1.02 TOX=16.8n NSUB=2e17 .MODEL DCGD D CJO=598p VJ=0.150 M=0.340 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=40p VJ=0.500 M=0.450 .MODEL DLIM D IS=100U .ENDS DMP2035UTS*---------- DMP2035UTS Spice Model ---------- .SUBCKT DMP2035UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02108 RS 30 3 0.001 RG 20 2 9.45 CGS 2 3 1.503E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.47E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 8.718E+005 KP = 43.38 ETA = 0.0009338 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 7.975 VTO = -0.784 .MODEL DCGD D CJO = 6.223E-010 VJ = 0.1355 M = 0.3364 .MODEL DSUB D IS = 2.917E-008 N = 1.315 RS = 0.04378 BV = 25 CJO = 6.786E-012 VJ = 1 M = 0.001 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2035UTS Spice Model v1.0 Last Revised 2011/2/11 DMP2066LDM*SRC=DMP2066LDM;DI_DMP2066LDM;MOSFETs P;Enh;20.0V 4.60A 40.0mohms *SYM=POWMOSP .SUBCKT DI_DMP2066LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 18.0m RS 40 3 2.00m RG 20 2 32.6 CGS 2 3 660p EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.47n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=-1.20 KP=43.8 .MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680 .MODEL DSUB D (IS=19.1n N=1.50 RS=0.141 BV=20.0 + CJO=350p VJ=0.800 M=0.420 TT=223n .MODEL DLIM D (IS=100U) .ENDS DMP2066LSD*SRC=DMP2066LSD;DI_DMP2066LSD;MOSFETs P;Enh;20.0V 5.80A 40.0mohms *SYM=POWMOSP .SUBCKT DI_DMP2066LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 18.0m RS 40 3 2.00m RG 20 2 25.9 CGS 2 3 660p EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.47n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=-1.20 KP=43.8 .MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.1n N=1.50 RS=0.112 BV=20.0 + CJO=350p VJ=0.800 M=0.420 TT=239n .MODEL DLIM D (IS=100U) .ENDS DMP2066LSN*SRC=DMP2066LSN;DI_DMP2066LSN;MOSFETs P;Enh;20.0V 4.60A 40.0mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2066LSN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 18.0m RS 40 3 2.00m RG 20 2 32.6 CGS 2 3 660p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.47n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.13m VTO=-1.20 KP=44.8 .MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680 .MODEL DSUB D (IS=19.1n N=1.50 RS=97.8m BV=20.0 + CJO=350p VJ=0.800 M=0.420 TT=188n .MODEL DLIM D (IS=100U) .ENDS DMP2066LSS*SRC=DMP2066LSS;DI_DMP2066LSS;MOSFETs P;Enh;20.0V 6.50A 40.0mohms *SYM=POWMOSP .SUBCKT DI_DMP2066LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 18.0m RS 40 3 2.00m RG 20 2 23.1 CGS 2 3 660p EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 1.47n R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=-1.20 KP=43.8 .MODEL DCGD D (CJO=1.47n VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=0.100 BV=20.0 + CJO=350p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS DMP2066UFDE*---------- DMP2066UFDE Spice Model ---------- .SUBCKT DMP2066UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02066 RS 30 3 0.001 RG 20 2 10.4 CGS 2 3 1.463E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.36E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 42.59 KAPPA = 49.86 VTO = -0.9435 .MODEL DCGD D CJO = 5.044E-010 VJ = 0.2 M = 0.3439 .MODEL DSUB D IS = 1E-006 N = 1.73 RS = 0.08493 BV = 25 CJO = 9.596E-011 VJ = 0.2 M = 0.4531 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2066UFDE Spice Model v1.0 Last Revised 2013/4/30 DMP2069UFY4*---------- DMP2069UFY4 Spice Model ---------- .SUBCKT DMP2069UFY4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0317 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.65E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.464E+005 KP = 25.76 ETA = 0.005087 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.7287 VTO = -0.7669 .MODEL DCGD D CJO = 4.12E-010 VJ = 0.1028 M = 0.3062 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 2.196E-010 VJ = 0.2994 M = 0.4305 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2069UFY4 Spice Model v1.0 Last Revised 2011/3/25 DMP2100U*---------- DMP2100U Spice Model ---------- .SUBCKT DMP2100U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0317 RS 30 3 0.001 RG 20 2 251 CGS 2 3 9.65E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.464E+005 KP = 25.76 ETA = 0.005087 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.7287 VTO = -0.7669 .MODEL DCGD D CJO = 4.12E-010 VJ = 0.1028 M = 0.3062 .MODEL DSUB D IS = 2.605E-008 N = 1.315 RS = 0.07863 BV = 20 CJO = 2.196E-010 VJ = 0.2994 M = 0.4305 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2100U Spice Model v1.0 Last Revised 2013/1/18 DMP2104LP*SRC=DMP2104LP;???;MOSFETs P;Enh;20.0V 1.50A 0.150ohms Diodes, Inc. .MODEL ??? PMOS( LEVEL=1 VTO=-1.00 KP=11.9 GAMMA=1.24 + PHI=.75 LAMBDA=386u RD=21.0m RS=21.0m + IS=750f PB=0.800 MJ=0.460 CBD=81.1p + CBS=97.4p CGSO=720n CGDO=600n CGBO=1.88u ) * -- Assumes default L=100U W=100U -- DMP2104V* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=01/03/2010 *VERSION=2 *------connections-------D_G_S * .SUBCKT DMP2104V 1 2 3 M1 1 2 3 3 Pmod1 M2 1 2 3 3 Pmod2 M3 1 2 3 3 Pmod3 .MODEL Pmod1 PMOS(LEVEL=1 VTO=-1.08 KP=11.9 GAMMA=1.24 + PHI=.75 LAMBDA=244u RD=45m RS=21.0m + IS=475f PB=0.800 MJ=0.460 CBD=81.1p + CBS=97.4p CGSO=720n CGDO=600n CGBO=1.88u) .MODEL Pmod2 PMOS(LEVEL=1 VTO=-0.88 KP=1.2 RD=45 RS=2.1) .MODEL Pmod3 PMOS(LEVEL=1 VTO=-0.68 KP=0.12 RD=450 RS=210) .ENDS * *$ DMP210DUDJ*---------- DMP210DUDJ Spice Model ---------- .SUBCKT DMP210DUDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.438 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 1.209E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 8E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.1751 KAPPA = 29.86 VTO = -0.7543 .MODEL DCGD D CJO = 7.994E-012 VJ = 0.6297 M = 0.3605 .MODEL DSUB D IS = 3.261E-007 N = 2.5 RS = 0.4415 BV = 22 CJO = 3.868E-012 VJ = 1 M = 0.3722 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP210DUDJ Spice Model v1.0 Last Revised 2012/4/27 DMP210DUFB4*---------- DMP210DUFB4 Spice Model ---------- .SUBCKT DMP210DUFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.438 RS 30 3 0.001 RG 20 2 8.6 CGS 2 3 1.209E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 2E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 8E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.1751 KAPPA = 29.86 VTO = -0.7543 .MODEL DCGD D CJO = 7.994E-012 VJ = 0.6297 M = 0.3605 .MODEL DSUB D IS = 3.261E-007 N = 2.5 RS = 0.4415 BV = 22 CJO = 3.868E-012 VJ = 1 M = 0.3722 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP210DUFB4 Spice Model v1.0 Last Revised 2012/4/27 DMP2123L*SRC=DMP2123L;DI_DMP2123L;MOSFETs P;Enh;20.0V 3.00A 0.123ohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2123L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 57.4m RS 40 3 4.07m RG 20 2 50.0 CGS 2 3 342p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 966p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.80m VTO=-1.25 KP=44.2 .MODEL DCGD D (CJO=966p VJ=0.600 M=0.680 .MODEL DSUB D (IS=12.5n N=1.50 RS=0.170 BV=20.0 + CJO=230p VJ=0.800 M=0.420 TT=196n .MODEL DLIM D (IS=100U) .ENDS DMP2130L*SRC=DMP2130L;DI_DMP2130L;MOSFETs P;Enh;20.0V 1.00A 0.125ohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2130L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 58.4m RS 40 3 4.12m RG 20 2 150 CGS 2 3 342p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 966p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=-1.25 KP=44.2Meg .MODEL DCGD D (CJO=966p VJ=0.600 M=0.680 .MODEL DSUB D (IS=4.15n N=1.50 RS=0.510 BV=20.0 + CJO=230p VJ=0.800 M=0.420 TT=141n .MODEL DLIM D (IS=100U) .ENDS DMP2130LDM*SRC=DMP2130LDM;DI_DMP2130LDM;MOSFETs P;Enh;20.0V 3.40A 80.0mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP2130LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 37.0m RS 40 3 3.00m RG 20 2 44.1 CGS 2 3 345p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 937p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.53m VTO=-1.25 KP=21.9 .MODEL DCGD D (CJO=937p VJ=0.600 M=0.680 .MODEL DSUB D (IS=14.1n N=1.50 RS=0.150 BV=20.0 + CJO=224p VJ=0.800 M=0.420 TT=188n .MODEL DLIM D (IS=100U) .ENDS DMP2160U*---------- DMP2160U Spice Model ---------- .SUBCKT DMP2160U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2160U Spice Model v1.0 Last Revised 2011/6/14 DMP2160UFDB*---------- DMP2160UFDB Spice Model ---------- .SUBCKT DMP2160UFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2160UFDB Spice Model v1.0 Last Revised 2011/6/14 DMP2160UW*---------- DMP2160UW Spice Model ---------- .SUBCKT DMP2160UW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2160UW Spice Model v1.0 Last Revised 2011/6/14 DMP21D0UFB*---------- DMP21D0UFB Spice Model ---------- .SUBCKT DMP21D0UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2 RS 30 3 0.001 RG 20 2 500 CGS 2 3 7.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.857 KAPPA = 9.123 VTO = -0.8248 .MODEL DCGD D CJO = 3.857E-011 VJ = 0.2478 M = 0.3502 .MODEL DSUB D IS = 9.827E-009 N = 1.492 RS = 0.8393 BV = 25 CJO = 1.95E-011 VJ = 0.2986 M = 0.379 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D0UFB Spice Model v1.0 Last Revised 2012/1/13 DMP21D0UFB4*---------- DMP21D0UFB4 Spice Model ---------- .SUBCKT DMP21D0UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2 RS 30 3 0.001 RG 20 2 500 CGS 2 3 7.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.857 KAPPA = 9.123 VTO = -0.8248 .MODEL DCGD D CJO = 3.857E-011 VJ = 0.2478 M = 0.3502 .MODEL DSUB D IS = 9.827E-009 N = 1.492 RS = 0.8393 BV = 25 CJO = 1.95E-011 VJ = 0.2986 M = 0.379 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D0UFB4 Spice Model v1.0 Last Revised 2012/1/13 DMP21D0UFD*---------- DMP21D0UFD Spice Model ---------- .SUBCKT DMP21D0UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2 RS 30 3 0.001 RG 20 2 500 CGS 2 3 7.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.857 KAPPA = 9.123 VTO = -0.8248 .MODEL DCGD D CJO = 3.857E-011 VJ = 0.2478 M = 0.3502 .MODEL DSUB D IS = 9.827E-009 N = 1.492 RS = 0.8393 BV = 25 CJO = 1.95E-011 VJ = 0.2986 M = 0.379 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D0UFD Spice Model v1.0 Last Revised 2012/1/13 DMP21D0UT*---------- DMP21D0UT Spice Model ---------- .SUBCKT DMP21D0UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2 RS 30 3 0.001 RG 20 2 500 CGS 2 3 7.5E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 9.5E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 2.857 KAPPA = 9.123 VTO = -0.8248 .MODEL DCGD D CJO = 3.857E-011 VJ = 0.2478 M = 0.3502 .MODEL DSUB D IS = 9.827E-009 N = 1.492 RS = 0.8393 BV = 25 CJO = 1.95E-011 VJ = 0.2986 M = 0.379 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D0UT Spice Model v1.0 Last Revised 2012/1/13 DMP21D5UFB4*---------- DMP21D5UFB4 Spice Model ---------- .SUBCKT DMP21D5UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D5UFB4 Spice Model v1.0 Last Revised 2011/10/27 DMP21D5UFD*---------- DMP21D5UFD Spice Model ---------- .SUBCKT DMP21D5UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.4041 RS 30 3 0.001 RG 20 2 14.3 CGS 2 3 4.178E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823 .MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576 .MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ = 0.3007 M = 0.2934 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP21D5UFD Spice Model v1.0 Last Revised 2012/11/28 DMP2215L*DIODES_INC_SPICE_MODEL DMP2215L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=06Jan2012 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMP2215L 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 45E-3 RS 23 3 Rmod1 10E-3 RG 20 22 14 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 220E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 480E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.13 TOX=7.5E-8 NSUB=1E+16 KP=7.5 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 380E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.9E-12 N=1.02 RS=0.035 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT DMP2225L*DIODES_INC_SPICE_MODEL DMP2225L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=18sep2013 *VERSION=2 *PINS 10=D 20=G 30=S .SUBCKT DMP2225L 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 45E-3 RS 23 3 Rmod1 10E-3 RG 20 22 14 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 220E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 480E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.13 TOX=7.5E-8 NSUB=1E+16 KP=7.5 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 380E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.9E-12 N=1.02 RS=0.035 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL DMP2240UDM*SRC=DMP2240UDM;DI_DMP2240UDM;MOSFETs Enh;20.0V 2.00A 0.150ohms Diodes Inc MOSFET .MODEL DI_DMP2240UDM PMOS( LEVEL=1 VTO=1.00 KP=11.9u GAMMA=1.24 + PHI=.75 LAMBDA=514u RD=21.0m RS=21.0m + IS=1.00p PB=0.800 MJ=0.460 CBD=81.1p + CBS=97.4p CGSO=720n CGDO=600n CGBO=1.88u ) * -- Assumes default L=100U W=100U -- DMP2240UW*SRC=DMP2240UW;DI_DMP2240UW;MOSFETs Enh;20.0V 1.50A 0.150ohms Diodes Inc MOSFET .MODEL DI_DMP2240UW PMOS( LEVEL=1 VTO=1.00 KP=11.9u GAMMA=1.24 + PHI=.75 LAMBDA=514u RD=21.0m RS=21.0m + IS=750f PB=0.800 MJ=0.460 CBD=81.1p + CBS=97.4p CGSO=720n CGDO=600n CGBO=1.88u ) * -- Assumes default L=100U W=100U -- DMP22D4UFA*---------- DMP22D4UFA Spice Model ---------- .SUBCKT DMP22D4UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.6562 RS 30 3 0.001 RG 20 2 400 CGS 2 3 2.653E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305 .MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749 .MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705 + BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP22D4UFA Spice Model v1.0 Last Revised 2012/11/30 DMP2305U*---------- DMP2305U Spice Model ---------- .SUBCKT DMP2305U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.03653 RS 30 3 0.001 RG 20 2 23 CGS 2 3 6.954E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.85E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.385E+005 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 24.44 KAPPA = 0.8442 VTO = -0.8978 .MODEL DCGD D CJO = 3.468E-010 VJ = 0.2064 M = 0.3945 .MODEL DSUB D IS = 4.536E-009 N = 1.339 RS = 0.05752 BV = 30 CJO = 2.406E-011 VJ = 1.677E-012 M = 0.8 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP2305U Spice Model v1.0 Last Revised 2011/6/20 DMP3010LPS*---------- DMP3010LPS Spice Model ---------- .SUBCKT DMP3010LPS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.002936 RS 30 3 0.001 RG 20 2 1.28 CGS 2 3 5.724E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 118.4 KAPPA = 64.79 VTO = -1.906 .MODEL DCGD D CJO = 2.87E-009 VJ = 0.3337 M = 0.3427 .MODEL DSUB D IS = 2.26E-010 N = 1.19 RS = 0.002225 + BV = 40 CJO = 1.506E-009 VJ = 0.09737 M = 0.2275 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3010LPS Spice Model v1.0 Last Revised 2014/09/10 DMP3015LSS*---------- DMP3015LSS Spice Model ---------- .SUBCKT DMP3015LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005144 RS 30 3 0.001 RG 20 2 2 CGS 2 3 2.486E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 2.95E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 610.4 VMAX = 1E+006 KP = 57.85 ETA = 0.01628 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 20.51 VTO = -2.177 .MODEL DCGD D CJO = 1.305E-009 VJ = 0.3167 M = 0.312 .MODEL DSUB D IS = 2.366E-010 N = 1.216 RS = 0.002639 BV = 35 CJO = 8.298E-011 VJ = 0.6 M = 0.0929 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3015LSS Spice Model v1.2 Last Revised 2011/4/22 DMP3017SFG*---------- DMP3017SFG Spice Model ---------- .SUBCKT DMP3017SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.005039 RS 30 3 0.001 RG 20 2 8.36 CGS 2 3 1.93E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.6E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 46.32 KAPPA = 49.86 VTO = -2.2 .MODEL DCGD D CJO = 1.115E-009 VJ = 0.6515 M = 0.3641 .MODEL DSUB D IS = 4.862E-012 N = 1.048 RS = 0.005212 BV = 50 CJO = 7.568E-011 VJ = 0.8 M = 0.6 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3017SFG Spice Model v1.0 Last Revised 2015/3/26 DMP3020LSS*SRC=DMP3020LSS;DI_DMP3020LSS;MOSFETs P;Enh;30.0V 12.0A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP3020LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 76.7 CGS 2 3 179p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 347p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=450u VTO=-2.00 KP=23.3 .MODEL DCGD D (CJO=347p VJ=0.600 M=0.680 .MODEL DSUB D (IS=49.8n N=1.50 RS=29.2m BV=30.0 + CJO=92.5p VJ=0.800 M=0.420 TT=196n .MODEL DLIM D (IS=100U) .ENDS DMP3028LFDE*---------- DMP3028LFDE Spice Model ---------- .SUBCKT DMP3028LFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01205 RS 30 3 0.001 RG 20 2 14.8 CGS 2 3 1.141E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 1E-009 + TOX = 6E-008 NSUB = 1E+016 KP = 24.29 KAPPA = 55.87 VTO = -2.147 .MODEL DCGD D CJO = 4.573E-010 VJ = 0.4119 M = 0.3922 .MODEL DSUB D IS = 2.24E-010 N = 1.262 RS = 0.009108 + BV = 50 CJO = 2.261E-010 VJ = 0.5048 M = 0.5435 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3028LFDE Spice Model v1.0 Last Revised 2013/11/12 DMP3030SN*---------- DMP3030SN Spice Model ---------- .SUBCKT DMP3030SN 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.1167 RS 30 3 0.001 RG 20 2 51 CGS 2 3 1.103E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 1.68 KAPPA = 13.91 VTO = -2.049 .MODEL DCGD D CJO = 2.109E-010 VJ = 0.6052 M = 0.5407 .MODEL DSUB D IS = 2.361E-010 N = 1.408 RS = 0.01768 + BV = 50 CJO = 1.912E-010 VJ = 0.6317 M = 0.3668 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3030SN Spice Model v2.0 Last Revised 2013/11/0 DMP3035LSS*SRC=DMP3035LSS;DI_DMP3035LSS;MOSFETs P;Enh;30.0V 12.0A 35.0mohms Diodes Inc MOSFET *SYM=POWMOSP .SUBCKT DI_DMP3035LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 15.6m RS 40 3 1.87m RG 20 2 76.7 CGS 2 3 179p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 347p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m + ETA=450u VTO=-2.00 KP=23.3 .MODEL DCGD D (CJO=347p VJ=0.600 M=0.680 .MODEL DSUB D (IS=49.8n N=1.50 RS=29.2m BV=30.0 + CJO=92.5p VJ=0.800 M=0.420 TT=196n .MODEL DLIM D (IS=100U) .ENDS DMP3056LDM*---------- DMP3056LDM Spice Model ---------- .SUBCKT DMP3056LDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3056LDM Spice Model v2.0 Last Revised 2012/8/06 DMP3056LSD*---------- DMP3056LSD Spice Model ---------- .SUBCKT DMP3056LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMC3036LSD Spice Model v2.0 Last Revised 2012/8/06 DMP3056LSS*---------- DMP3056LSS Spice Model ---------- .SUBCKT DMP3056LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02496 RS 30 3 0.001 RG 20 2 11.1 CGS 2 3 8.938E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8.92E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001 + TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9 .MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457 .MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819 + BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3056LSS Spice Model v2.0 Last Revised 2012/8/06 DMP3098L*DIODES_INC_SPICE_MODEL DMP3098L *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11Dec2012 *VERSION=1 .SUBCKT DMP3098L 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 27E-3 RS 23 3 Rmod1 27E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 100E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 400E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS DMP3098LDM*DIODES_INC_SPICE_MODEL DMP3098LDM *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11Dec2012 *VERSION=1 .SUBCKT DMP3098LDM 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 26E-3 RS 23 3 Rmod1 26E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 100E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 400E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS DMP3098LSD*DIODES_INC_SPICE_MODEL DMP3098LSD *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11Dec2012 *VERSION=1 .SUBCKT DMP3098LSD 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 26E-3 RS 23 3 Rmod1 26E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 100E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 400E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS DMP3098LSS*DIODES_INC_SPICE_MODEL DMP3098LSS *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=11Dec2012 *VERSION=1 .SUBCKT DMP3098LSS 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 26E-3 RS 23 3 Rmod1 26E-3 RG 20 22 5 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 100E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 400E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33) .MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6) .ENDS DMP3105LVT*---------- DMP3105LVT Spice Model ---------- .SUBCKT DMP3105LVT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04181 RS 30 3 0.001 RG 20 2 12.29 CGS 2 3 3.719E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.46E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.397 KAPPA = 9.681 VTO = -1.023 .MODEL DCGD D CJO = 3.903E-010 VJ = 0.2566 M = 0.45 .MODEL DSUB D IS = 2.936E-009 N = 1.327 RS = 0.07557 BV = 33 CJO = 1.598E-010 VJ = 0.4699 M = 0.5274 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3105LVT Spice Model v1.0 Last Revised 2011/10/7 DMP3130L*---------- DMP3130L Spice Model ---------- .SUBCKT DMP3130L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04181 RS 30 3 0.001 RG 20 2 12.29 CGS 2 3 3.719E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.46E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 9.397 KAPPA = 9.681 VTO = -1.023 .MODEL DCGD D CJO = 3.903E-010 VJ = 0.2566 M = 0.45 .MODEL DSUB D IS = 2.936E-009 N = 1.327 RS = 0.07557 BV = 33 CJO = 1.598E-010 VJ = 0.4699 M = 0.5274 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3130L Spice Model v1.0 Last Revised 2011/10/7 DMP3160L*---------- DMP3160L Spice Model ---------- .SUBCKT DMP3160L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04307 RS 30 3 0.001 RG 20 2 17.1 CGS 2 3 3.339E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 3.9E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 8.459 KAPPA = 9.123 VTO = -1.527 .MODEL DCGD D CJO = 1.701E-010 VJ = 0.4656 M = 0.372 .MODEL DSUB D IS = 5E-010 N = 1.421 RS = 0.05533 BV = 33 CJO = 2.821E-011 VJ = 0.5166 M = 0.4868 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP3160L Spice Model v1.0 Last Revised 2011/10/28 DMP31D0UFB4*---------- DMP31D0UFB4 Spice Model ---------- .SUBCKT DMP31D0UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.3953 RS 30 3 0.001 RG 20 2 166 CGS 2 3 7.126E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 3.955 KAPPA = 0.2552 VTO = -0.6755 .MODEL DCGD D CJO = 3.218E-011 VJ = 0.07451 M = 0.3033 .MODEL DSUB D IS = 1.621E-008 N = 1.532 RS = 0.5477 + BV = 95.86 CJO = 1.035E-011 VJ = 0.0002124 M = 0.1217 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.137E-005 N = 1.184E+004 BV = 4.441E-010 .ENDS *Diodes DMP31D0UFB4 Spice Model v1.0 Last Revised 2013/10/9 DMP32D4S*---------- DMP32D4S Spice Model ---------- .SUBCKT DMP32D4SW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2489 RS 30 3 0.001 RG 20 2 6.2 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.241E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 + ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.9475 + KAPPA = 4.451E-013 VTO = -2.03 .MODEL DCGD D CJO = 4.722E-011 VJ = 0.002858 M = 0.1852 .MODEL DSUB D IS = 2.27E-010 N = 1.611 RS = 0.3594 BV = 95.86 CJO = 4.168E-012 + VJ = 2.307E-006 M = 0.05063 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 .ENDS *Diodes DMP32D4S Spice Model v1.0 Last Revised 2013/8/5 DMP32D4SW*---------- DMP32D4SW Spice Model ---------- .SUBCKT DMP32D4SW 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.2489 RS 30 3 0.001 RG 20 2 6.2 DESD1 2 5 DESD DESD2 3 5 DESD CGS 2 3 4.241E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 + ETA = 0.001 TOX = 6E-008 NSUB = 1E+016 KP = 0.9475 + KAPPA = 4.451E-013 VTO = -2.03 .MODEL DCGD D CJO = 4.722E-011 VJ = 0.002858 M = 0.1852 .MODEL DSUB D IS = 2.27E-010 N = 1.611 RS = 0.3594 BV = 95.86 CJO = 4.168E-012 + VJ = 2.307E-006 M = 0.05063 .MODEL DLIM D IS = 0.0001 .MODEL DESD D IS = 1.845E-008 N = 59.86 BV = 2.273 .ENDS *Diodes DMP32D4SW Spice Model v1.0 Last Revised 2013/8/5 DMP32D9UFZ*---------- DMP32D9UFZ Spice Model ---------- .SUBCKT DMP32D9UFZ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 1.727 RS 30 3 0.001 RG 20 2 389 CGS 2 3 2.041E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 5.3E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 + TOX = 6E-008 NSUB = 1E+016 KP = 0.5546 KAPPA = 49.86 VTO = -0.7516 .MODEL DCGD D CJO = 7.862E-012 VJ = 0.2 M = 0.3592 .MODEL DSUB D IS = 2.888E-005 N = 4.275 RS = 4.441E-010 BV = 35 CJO = 2.878E-012 VJ = 0.6 M = 0.2781 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP32D9UFZ Spice Model v1.0 Last Revised 2014/12/5 DMP4015SK3*---------- DMP4015SK3 Spice Model ---------- .SUBCKT DMP4015SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SK3 Spice Model v1.0 Last Revised 2012/1/13 DMP4015SSS*---------- DMP4015SSS Spice Model ---------- .SUBCKT DMP4015SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.00523 RS 30 3 1E-006 RG 20 2 7.77 CGS 2 3 4E-009 EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 3.7E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.02012 + TOX = 5E-008 NSUB = 1E+016 KP = 82.85 KAPPA = 0.001 VTO = -2.609 .MODEL DCGD D CJO = 1.762E-009 VJ = 0.4937 M = 0.3181 .MODEL DSUB D IS = 1.247E-011 N = 1.091 RS = 0.004133 BV = 45 CJO = 1.6E-009 VJ = 0.437 M = 0.3036 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4015SSS Spice Model v1.0 Last Revised 2012/1/13 DMP4025SFG*---------- DMP4025SFG Spice Model ---------- .SUBCKT DMP4025SFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.006043 RS 30 3 0.001 RG 20 2 6.43 CGS 2 3 1.554E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1.4E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385 .MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221 .MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 + BV = 50 CJO = 2.892E-010 VJ = 0.0947 M = 0.3174 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4025SFG Spice Model v1.0 Last Revised 2013/08/4 DMP4047LFDE*---------- DMP4047LFDE Spice Model ---------- .SUBCKT DMP4047LFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01862 RS 30 3 0.001 RG 20 2 7.7 CGS 2 3 1.3E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 22.81 KAPPA = 0.00531 VTO = -1.74 .MODEL DCGD D CJO = 2.751E-010 VJ = 0.4031 M = 0.3067 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4047LFDE Spice Model v1.0 Last Revised 2013/04/16 DMP4047SK3*---------- DMP4047SK3 Spice Model ---------- .SUBCKT DMP4047SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.01862 RS 30 3 0.001 RG 20 2 7.7 CGS 2 3 1.3E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 8E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 22.81 KAPPA = 0.00531 VTO = -1.74 .MODEL DCGD D CJO = 2.751E-010 VJ = 0.4031 M = 0.3067 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.637E-010 VJ = 0.753 M = 0.6004 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4047SK3 Spice Model v1.0 Last Revised 2015/04/24 DMP4047SSD**---------- DMP4047SSD Spice Model ---------- .SUBCKT DMP4047SSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.0269 RS 30 3 0.001 RG 20 2 12.6 CGS 2 3 1.121E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 23.02 KAPPA = 53.88 VTO = -1.675 .MODEL DCGD D CJO = 2.806E-010 VJ = 0.3881 M = 0.3064 .MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 + BV = 50 CJO = 1.89E-010 VJ = 4.441E-016 M = 1 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4047SSD Spice Model v1.0 Last Revised 2014/02/05 DMP4051LK3*---------- DMP4051LK3 Spice Model ---------- .SUBCKT DMP4051LK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.02905 RS 30 3 0.001 RG 20 2 14.26 CGS 2 3 9.351E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.4E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 13.82 KAPPA = 36.81 VTO = -1.29 .MODEL DCGD D CJO = 2.635E-010 VJ = 0.2231 M = 0.365 .MODEL DSUB D IS = 2.311E-010 N = 1.205 RS = 0.02404 + BV = 50 CJO = 8.511E-011 VJ = 0.1768 M = 0.3549 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP4051LK3 Spice Model v1.0 Last Revised 2013/05/05 DMP56D0UFB*---------- DMP56D0UFB Spice Model ---------- .SUBCKT DMP56D0UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 4.03 RS 30 3 0.001 RG 20 2 244 CGS 2 3 4.868E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.0008262 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9705 KAPPA = 1E-015 VTO = -0.8369 .MODEL DCGD D CJO = 1.069E-011 VJ = 0.01866 M = 0.2394 .MODEL DSUB D IS = 1.878E-007 N = 2.277 RS = 0.3052 BV = 95.86 + CJO = 4.824E-012 VJ = 0.1277 M = 0.2668 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP56D0UFB Spice Model v1.0 Last Revised 2014/2/20 DMP56D0UV*---------- DMP56D0UV Spice Model ---------- .SUBCKT DMP56D0UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 4.03 RS 30 3 0.001 RG 20 2 244 CGS 2 3 4.868E-011 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 7E-011 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.0008262 + TOX = 6E-008 NSUB = 1E+016 KP = 0.9705 KAPPA = 1E-015 VTO = -0.8369 .MODEL DCGD D CJO = 1.069E-011 VJ = 0.01866 M = 0.2394 .MODEL DSUB D IS = 1.878E-007 N = 2.277 RS = 0.3052 BV = 95.86 + CJO = 4.824E-012 VJ = 0.1277 M = 0.2668 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP56D0UV Spice Model v1.0 Last Revised 2014/2/20 DMP58D0SV*SRC=DMP58D0SV;DMP58D0SV_DI;MOSFETs P;Enh;50.0V 0.160A 8.00ohms Diodes Inc. MOSFET .MODEL DMP58D0SV_DI PMOS( LEVEL=1 VTO=-2.10 KP=25.0m GAMMA=2.60 + PHI=.75 LAMBDA=133u RD=1.12 RS=1.12 + IS=80.0f PB=0.800 MJ=0.460 CBD=12.8p + CBS=15.4p CGSO=16.8n CGDO=14.0n CGBO=239n ) * -- Assumes default L=100U W=100U -- DMP6180SK3*---------- DMP6180SK3 Spice Model ---------- .SUBCKT DMP6180SK3 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.04464 RS 30 3 0.001 RG 20 2 13 CGS 2 3 1E-009 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.5E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 + TOX = 6E-008 NSUB = 1E+016 KP = 10.4 KAPPA = 30.49 VTO = -2.063 .MODEL DCGD D CJO = 1.881E-010 VJ = 0.6541 M = 0.3655 .MODEL DSUB D IS = 2.224E-010 N = 1.277 RS = 0.01338 + BV = 50 CJO = 1.189E-010 VJ = 0.7738 M = 0.6069 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMP6180SK3 Spice Model v1.0 Last Revised 2013/08/07 DMS2120LFWB*---------- DMS2120LFWB Spice Model ---------- .SUBCKT DMS2120LFWB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *---------- SBR1U40LP Spice Model ---------- .SUBCKT SBR1U40LP 1 2 DS 1 2 SBR .MODEL SBR D IS=3.48u RS=66.4m BV=40.0 IBV=50.0u + CJO=928p M=0.333 N=1.11 TT=8.06n .ENDS *Diodes DMS2120LFWB Spice Model v1.0 Last Revised 2011/11/25 DMS2220LFDB*---------- DMS2220LFDB Spice Model ---------- .SUBCKT DMS2220LFDB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006 RD 10 1 0.06732 RS 30 3 0.001 RG 20 2 44.9 CGS 2 3 5.341E-010 EGD 12 30 2 1 1 VFB 14 30 0 FFB 2 1 VFB 1 CGD 13 14 6.75E-010 R1 13 30 1 D1 13 12 DLIM DDG 14 15 DCGD R2 12 15 1 D2 30 15 DLIM DSD 10 3 DSUB .MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA = 0.005556 + TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485 .MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355 .MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ = 0.3188 M = 0.5753 .MODEL DLIM D IS = 0.0001 .ENDS *---------- SBR1U40LP Spice Model ---------- .SUBCKT SBR1U40LP 1 2 DS 1 2 SBR .MODEL SBR D IS=3.48u RS=66.4m BV=40.0 IBV=50.0u + CJO=928p M=0.333 N=1.11 TT=8.06n .ENDS *Diodes DMS2220LFDB Spice Model v1.0 Last Revised 2011/11/25 DMS3014SSS*---------- DMS3014SSS Spice Model ---------- .SUBCKT DMS3014SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01 RS 30 3 0.001 RG 20 2 1.3 CGS 2 3 2.268E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.297E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 9.356E+005 ETA = 4.441E-017 VTO = 1.817 + TOX = 6E-008 NSUB = 4.849E+016 KP = 150 KAPPA = 138.4 U0 = 400 .MODEL DCGD D CJO = 4.894E-010 VJ = 0.01098 M = 0.1971 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 2.502E-010 N = 1.063 RS = 0.03357 .MODEL DL D IS = 1.094E-005 N = 1.118 RS = 0.04796 VJ = 0.2303 CJO = 6.6E-010 M = 0.6461 TT = 1.595E-008 .MODEL DR D IS = 1E-015 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMS3014SSS Spice Model v1.0 Last Revised 2010/11/10 DMS3015SSS*---------- DMS3015SSS Spice Model ---------- .SUBCKT DMS3015SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00327 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.174E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.297E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01379 VTO = 1.824 + TOX = 6E-008 NSUB = 4.849E+016 KP = 64.51 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 7.171E-010 VJ = 0.2386 M = 0.3999 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 1.011E-012 N = 0.9 RS = 0.007376 .MODEL DL D IS = 1.416E-007 N = 0.8743 RS = 0.2205 VJ = 0.5878 CJO = 4.376E-010 M = 0.9 .MODEL DR D IS = 1.3E-006 N = 0.6 .MODEL DB D IS = 2.239E-008 N = 0.6 .ENDS *Diodes DMS3015SSS Spice Model v1.0 Last Revised 2011/3/28 DMS3016SSS*---------- DMS3016SSS Spice Model ---------- .SUBCKT DMS3016SSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *Diodes DMS3016SSS Spice Model v1.0 Last Revised 2010/11/10 DMS3017SSD*---------- DMS3017SSD Spice Model ---------- *NMOS_Q1 .SUBCKT DMS3017SSD_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.00327 RS 30 3 0.001 RG 20 2 1.48 CGS 2 3 1.174E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.297E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01379 VTO = 1.824 + TOX = 6E-008 NSUB = 4.849E+016 KP = 64.51 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 7.171E-010 VJ = 0.2386 M = 0.3999 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 1.011E-012 N = 0.9 RS = 0.007376 .MODEL DL D IS = 1.416E-007 N = 0.8743 RS = 0.2205 VJ = 0.5878 CJO = 4.376E-010 M = 0.9 .MODEL DR D IS = 1.3E-006 N = 0.6 .MODEL DB D IS = 2.239E-008 N = 0.6 .ENDS *NMOS_Q2 .SUBCKT DMS3017SSD_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMS3017SSD Spice Model v1.0 Last Revised 2011/6/27 DMS3019SSD*---------- DMS3019SSD Spice Model ---------- *NMOS_Q1 .SUBCKT DMS3019SSD_Q1 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.007253 RS 30 3 0.001 RG 20 2 2.68 CGS 2 3 1.769E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.666E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM D3 3 10 DS D4 3 10 DL D5 3 16 DR D6 10 16 DB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856 + TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9 .MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396 .MODEL DLIM D IS = 4.441E-010 .MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311 .MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010 M = 0.4555 TT = 1.595E-008 .MODEL DR D IS = 1E-006 N = 1.178 .MODEL DB D IS = 1E-011 N = 1 .ENDS *NMOS_Q2 .SUBCKT DMS3019SSD_Q2 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01149 RS 30 3 0.001002 RG 20 2 1.13 CGS 2 3 4.216E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 4.55E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098 + TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026 .MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578 + BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMS3019SSD Spice Model v1.0 Last Revised 2011/6/20 DMT6016LFDF*DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/12/2014 *VERSION=1 .SUBCKT DMN6016LFDF 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 6E-3 RS 23 3 Rmod1 6E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 740E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 660E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.00015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.77 TOX=7.5E-8 NSUB=7.5E+16 KP=120 NFS=7E+11 IS=.5E-15 N=10) .MODEL DCGD D (CJO = 320E-12 VJ = 0.42 M = 0.4 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.004 BV=66 CJO=500E-12 VJ=0.42 M=0.5 TT=18E-9 TRS1=2E-3 IKF=10) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.5e-3 TC2=6E-6) DMT6016LPS*DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/12/2014 *VERSION=1 .SUBCKT DMN6016LPS 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 6E-3 RS 23 3 Rmod1 6E-3 RG 20 22 1.5 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 740E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 660E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.00015 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.77 TOX=7.5E-8 NSUB=7.5E+16 KP=120 NFS=7E+11 IS=.5E-15 N=10) .MODEL DCGD D (CJO = 320E-12 VJ = 0.42 M = 0.4 T_ABS=25) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.004 BV=66 CJO=500E-12 VJ=0.42 M=0.5 TT=18E-9 TRS1=2E-3 IKF=10) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.5e-3 TC2=6E-6) .ENDS DMT6016LSS*---------- DMT6016LSS Spice Model ---------- .SUBCKT DMT6016LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.008248 RS 30 3 0.001 RG 20 2 1.35 CGS 2 3 8.551E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.685 + TOX = 6E-008 NSUB = 1E+016 KP = 44 U0 = 400 KAPPA = 1 .MODEL DCGD D CJO = 3.956E-010 VJ = 0.8 M = 0.6557 .MODEL DSUB D IS = 3.752E-008 N = 1.624 RS = 0.005938 BV = 65 CJO = 5.236E-010 VJ = 1 M = 0.2051 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMT6016LSS Spice Model v1.0 Last Revised 2014/12/19 DN0150ADJ*DIODES_INC_SPICE_MODEL DN0150ADJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.2 .MODEL DN0150ADJ NPN (IS=26E-15 NF=1 BF=180 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DN0150ALP4*DIODES_INC_SPICE_MODEL DN0150ALP4 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=17Aug2012 *VERSION=1.0 .MODEL DN0150ALP4 NPN (IS=26E-15 NF=1 BF=180 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DN0150BDJ*DIODES_INC_SPICE_MODEL DN0150BDJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.2 .MODEL DN0150BDJ NPN (IS=26E-15 NF=1 BF=260 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DN0150BLP4*DIODES_INC_SPICE_MODEL DN0150BLP4 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=17Aug2012 *VERSION=1.0 .MODEL DN0150BLP4 NPN (IS=26E-15 NF=1 BF=260 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DN350T05*SRC=DN350T05;DI_DN350T05;BJTs NPN; Si; 350V 0.500A 50.0MHz Diodes Inc. NPN BJT .MODEL DI_DN350T05 NPN (IS=177f NF=1.00 BF=185 VAF=337 + IKF=0.182 ISE=68.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=1.26 RB=5.05 RC=0.505 + XTB=1.5 CJE=69.1p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=3.05n TR=116n EG=1.12 ) DNBT8105*SRC=DNBT8105;DI_DNBT8105;BJTs NPN; Si; 60.0V 1.00A 150MHz Diodes Inc. Single NPN BJT .MODEL DI_DNBT8105 NPN (IS=167f NF=1.00 BF=264 VAF=139 + IKF=0.364 ISE=65.8p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.900 RE=0.231 RB=0.926 RC=92.6m + XTB=1.5 CJE=117p VJE=1.10 MJE=0.500 CJC=16.6p VJC=0.300 + MJC=0.300 TF=973p TR=165n EG=1.12 ) DNLS160 (Not Recommended)*SRC=DNLS160;DI_DNLS160;BJTs NPN; Si; 60.0V 1.00A 300MHz .MODEL DI_DNLS160 NPN (IS=3.69f NF=1.00 BF=322 VAF=139 + IKF=0.989 ISE=6.05f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=48.0m RB=0.192 RC=19.2m + XTB=1.5 CJE=120p VJE=1.10 MJE=0.500 CJC=20.8p VJC=0.300 + MJC=0.300 TF=480p TR=83.0n EG=1.12 ) DNLS160V (Not Recommended)*SRC=DNLS160V;DI_DNLS160V;BJTs NPN; Si; 60.0V 1.00A 300MHz .MODEL DI_DNLS160V NPN (IS=3.69f NF=1.00 BF=322 VAF=139 + IKF=0.989 ISE=6.05f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=48.0m RB=0.192 RC=19.2m + XTB=1.5 CJE=120p VJE=1.10 MJE=0.500 CJC=20.8p VJC=0.300 + MJC=0.300 TF=480p TR=83.0n EG=1.12 ) DNLS350E*SRC=DNLS350E;DI_DNLS350E;BJTs NPN; Si; 50.0V 3.00A 220MHz .MODEL DI_DNLS350E NPN (IS=11.7f NF=1.00 BF=388 VAF=127 + IKF=2.97 ISE=8.95f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=23.8m RB=95.3m RC=9.53m + XTB=1.5 CJE=341p VJE=1.10 MJE=0.500 CJC=45.4p VJC=0.300 + MJC=0.300 TF=574p TR=111n EG=1.12 ) DNLS350Y*SRC=DNLS350Y;DI_DNLS350Y;BJTs NPN; Si; 50.0V 3.00A 220MHz .MODEL DI_DNLS350Y NPN (IS=11.7f NF=1.00 BF=388 VAF=127 + IKF=2.97 ISE=8.95f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=23.8m RB=95.3m RC=9.53m + XTB=1.5 CJE=341p VJE=1.10 MJE=0.500 CJC=45.4p VJC=0.300 + MJC=0.300 TF=574p TR=111n EG=1.12 ) DP350T05*SRC=DP350T05;DI_DP350T05;BJTs PNP; Si; 350V 0.500A 50.0MHz Diodes Inc. PNP BJT .MODEL DI_DP350T05 PNP (IS=177f NF=1.00 BF=185 VAF=337 + IKF=0.182 ISE=68.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=1.26 RB=5.05 RC=0.505 + XTB=1.5 CJE=73.2p VJE=1.10 MJE=0.500 CJC=11.8p VJC=0.300 + MJC=0.300 TF=3.04n TR=116n EG=1.12 ) DPBT8105*SRC=DPBT8105;DI_DPBT8105;BJTs PNP; Si; 80.0V 1.00A 150MHz Diodes Inc. BJT PNP .MODEL DI_DPBT8105 PNP (IS=101f NF=1.00 BF=410 VAF=161 + IKF=0.304 ISE=29.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.281 RB=1.13 RC=0.113 + XTB=1.5 CJE=117p VJE=1.10 MJE=0.500 CJC=28.4p VJC=0.300 + MJC=0.300 TF=972p TR=162n EG=1.12 ) DPLS160*SRC=DPLS160;DI_DPLS160;BJTs PNP; Si; 60.0V 1.00A 240MHz .MODEL DI_DPLS160 PNP (IS=2.94f NF=1.00 BF=327 VAF=139 + IKF=0.989 ISE=5.32f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=64.0m RB=0.256 RC=25.6m + XTB=1.5 CJE=130p VJE=1.10 MJE=0.500 CJC=31.2p VJC=0.300 + MJC=0.300 TF=607p TR=49.8n EG=1.12 ) DPLS160V*SRC=DPLS160V;DI_DPLS160V;BJTs PNP; Si; 60.0V 1.00A 240MHz .MODEL DI_DPLS160V PNP (IS=2.94f NF=1.00 BF=327 VAF=139 + IKF=0.989 ISE=5.32f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.50 RE=64.0m RB=0.256 RC=25.6m + XTB=1.5 CJE=130p VJE=1.10 MJE=0.500 CJC=31.2p VJC=0.300 + MJC=0.300 TF=607p TR=49.8n EG=1.12 ) DPLS350E*SRC=DPLS350E;DI_DPLS350E;BJTs PNP; Si; 50.0V 3.00A 200MHz .MODEL DI_DPLS350E PNP (IS=9.40f NF=1.00 BF=382 VAF=127 + IKF=2.48 ISE=8.14f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=3.75 RE=25.8m RB=0.103 RC=10.3m + XTB=1.5 CJE=337p VJE=1.10 MJE=0.500 CJC=76.7p VJC=0.300 + MJC=0.300 TF=645p TR=122n EG=1.12 ) DPLS350Y*SRC=DPLS350Y;DI_DPLS350Y;BJTs PNP; Si; 50.0V 3.00A 200MHz .MODEL DI_DPLS350Y PNP (IS=9.40f NF=1.00 BF=382 VAF=127 + IKF=2.48 ISE=8.14f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=3.75 RE=25.8m RB=0.103 RC=10.3m + XTB=1.5 CJE=337p VJE=1.10 MJE=0.500 CJC=76.7p VJC=0.300 + MJC=0.300 TF=645p TR=122n EG=1.12 ) DRDN005W*SRC=DRDN005W;DI_DRDN005W_NPN;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. Transistor .MODEL DI_DRDN005W_NPN NPN (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=576p TR=110n EG=1.12 ) *SRC=DRDN005W;DI_DRDN005W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDN005W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) DRDN010W*SRC=DRDN010W;DI_DRDN010W_NPN;BJTs NPN; Si; 18.0V 1.00A 100MHz Diodes Inc. BJTs .MODEL DI_DRDN010W_NPN NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4 + IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m + XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=1.55n TR=238n EG=1.12 ) *SRC=DRDN010W;DI_DRDN010W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDN010W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) DRDNB16W*SRC=DRDNB16W;DI_DRDNB16W_NPN;BJTs NPN; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DRDNB16W_NPN NPN (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) *SRC=DRDNB16W;DI_DRDNB16W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDNB16W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) DRDNB21DNote: The following SPICE model is for the individual elements of this device. When applying this SPICE model to your circuit simulation be certain to add R1 and R2 values per the table found on the data sheet for the pre-biased transistor elements. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DRDNB21D;DI_DRDNB21D_NPN;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DRDNB21D_NPN NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) *SRC=DRDNB21D;DI_DRDNB21D_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDNB21D_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) DRDNB26W*SRC=DRDNB26W;DI_DRDNB26W_NPN;BJTs NPN; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DRDNB26W_NPN NPN (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) *SRC=DRDNB26W;DI_DRDNB26W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDNB26W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) DRDP006W*SRC=DRDP006W;DI_DRDP006W_PNP;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_DRDP006W_PNP PNP (IS=60.7f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 + MJC=0.300 TF=758p TR=123n EG=1.12 ) *SRC=DRDP006W;DI_DRDP006W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDP006W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) DRDPB16W*SRC=DRDPB16W;DI_DRDPB16W_PNP;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DRDPB16W_PNP PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) *SRC=DRDPB16W;DI_DRDPB16W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDPB16W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) DRDPB26W*SRC=DRDPB26W;DI_DRDPB26W_PNP;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DRDPB26W_PNP PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) *SRC=DRDPB26W;DI_DRDPB26W_DIODE;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_DRDPB26W_DIODE D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) DSS20200L*DIODES_INC_SPICE_MODEL_DSS20200L *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=30/10/2012 *VERSION=1 .MODEL DSS20200L PNP IS=2.5E-13 BF=400 NF=1 VAF=18.7 IKF=3.8 + ISE=1.9E-13 NE=1.5 BR=110 NR=1 VAR=5 IKR=2 ISC=1.3e-13 NC=1.45 RE=0.01 + RB=0.2 RC=0.02 CJE=199E-12 VJE=0.9 MJE=0.48 CJC=80E-12 VJC=0.53 + MJC=0.3 TF=3.8E-10 TR=3.8e-9 TRB1=.02 XTB=1.5 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS2515M*DIODES_INC_SPICE_MODEL DSS2515M *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02Apr2012 *VERSION=1 .MODEL DSS2515M NPN(IS=6E-14 BF=450 NF=.98 ISE=1.25E-14 NE=1.25 BR=40 NR=.99 ISC=2E-14 NC=1.15 RC=.05 RE=.05 CJE=36.08p VJE.75 MJE=.37 CJC=11.196p VJC=.5 MJC=.3 VAF=20 IKF=1.1 NK=.77) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS2540M*DIODES_INC_SPICE_MODEL DSS2540M *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=02Apr2012 *VERSION=1 .MODEL DSS2540M NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1 NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1 RE=.05 NK=.808) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS30101L* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=1 * .MODEL DSS30101L NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ DSS3540M*DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=14/11/2013 *VERSION=1 .MODEL DSS3540M PNP IS=20e-14 NF=1 ISE=5e-15 NE=1.3 BF=350 + VAF=26 IKF=1 ISC=9e-15 NC=1.03 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=36.99e-12 VJE=0.75 MJE=0.41 CJC=13.96e-12 VJC=0.5 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 NK=.71 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS4140U* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4140U NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ DSS4140V* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4140V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ DSS4160DS* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160DS NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS4160T* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160T NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS4160U* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160U NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS4160V* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=10-Dec-2013 *VERSION=1 * .MODEL DSS4160V NPN IS=6e-13 NF=1 ISE=30e-15 NE=1.35 BF=400 + VAF=28 IKF=8.5 ISC=2e-13 NC=1.2 BR=15 NR=1 VAR=5.7 IKR=0.6 RE=0.029 + RB=0.33 RC=0.01 CJE=160e-12 VJE=0.55 MJE=0.36 CJC=30e-12 VJC=0.5 + MJC=0.35 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.6 GAMMA=1.3e-9 NK=.7 + XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS4220V* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=16/9/2009 *VERSION=1 * .MODEL DSS4220V NPN IS=7.5E-13 BF=700 NF=1.005 VAF=61 IKF=3.3 + ISE=8.5E-14 NE=1.35 BR=130 NR=1 VAR=11.3 IKR=1.4 ISC=6E-13 NC=1.38 + RE=0.061 RB=0.5 RC=0.010 CJE=143E-12 VJE=0.80 MJE=0.39 CJC=39E-12 + VJC=0.40 MJC=0.26 TF=0.48E-9 TR=2.7E-9 RCO=0.42 GAMMA=2E-9 + QUASIMOD=1 XTB=1.35 TRE1=0.004 TRB1=0.004 TRC1=0.004 * *$ DSS4240T* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=1 * .MODEL DSS4240T NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ DSS4240V* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=2 * .MODEL DSS4240V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8 + ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44 + RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12 + VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8 + QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 * *$ DSS4540X* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/09 *VERSION=1 * .MODEL DSS4540X NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ DSS5140U* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=21/04/2009 *VERSION=1 * .MODEL DSS5140U PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430 + VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3 + RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12 + VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1 + RCO=0.85 GAMMA=6e-10 * *$ DSS5140V* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=21/04/2009 *VERSION=1 * .MODEL DSS5140V PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430 + VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3 + RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12 + VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1 + RCO=0.85 GAMMA=6e-10 * *$ DSS5160T* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=10-Dec-2014 *VERSION=1 * .MODEL DSS5160T PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300 + VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3 + RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12 + VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1 + RCO=1.4 GAMMA=15e-10 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL DSS5160U* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=24/04/2009 *VERSION=1 * .MODEL DSS5160U PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300 + VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3 + RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12 + VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1 + RCO=1.4 GAMMA=15e-10 * *$ DSS5160V* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=10-Dec-2014 *VERSION=1 * .MODEL DSS5160V PNP IS=2.2e-13 NF=1 ISE=8e-14 NE=1.49 BF=300 + VAF=51 IKF=2.6 ISC=8e-14 NC=1.2 BR=24 VAR=15 IKR=0.75 RE=33e-3 + RB=1000e-3 RC=112e-3 CJE=168e-12 VJE=0.8 MJE=0.45 CJC=49e-12 + VJC=0.7 MJC=0.47 TF=4e-10 TR=21e-9 XTB=1.6 QUASIMOD=1 + RCO=1.4 GAMMA=15e-10 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DSS5220V*DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=17/9/2009 *VERSION=1 .MODEL DSS5220V PNP IS=5.5e-13 NF=1.005 ISE=1.2e-13 NE=1.55 BF=590 + VAF=21 IKF=2 ISC=1.8e-13 NC=1.39 BR=52 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=147e-12 VJE=0.88 MJE=0.48 CJC=51e-12 VJC=0.51 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA DSS5240T* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/2009 *VERSION=1 * .MODEL DSS5240T PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 + ISE=10E-14 NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 + RE=0.014 RB=0.12 RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 + MJC=0.41 VJC=0.62 CJE=183E-12 MJE=0.5 VJE=0.95 TF=3.9E-10 + TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 TRC1=0.003 QUASIMOD=1 * *$ DSS60600MZ4* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/2009 *VERSION=1 * .MODEL DSS60600MZ4 PNP IS=5.3E-13 BF=220 NF=1.0 VAF=84 IKF=11 + ISE=5E-14 NE=1.4 BR=45 NR=1 VAR=8.9 IKR=5 ISC=5E-14 NC=1.07 RE=0.015 + RB=0.27 RC=0.022 CJE=750E-12 VJE=0.68 MJE=0.4 CJC=170E-12 VJC=0.55 + MJC=0.4 TF=0.5E-9 TR=2.2E-8 RCO=0.22 GAMMA=5e-10 QUASIMOD=1 + TRE1=.005 TRB1=.005 XTB=1.4 * *$ DSS60601MZ4* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=06/01/2009 *VERSION=1 * .MODEL DSS60601MZ4 NPN IS=1.0085E-12 NF=1.0001 BF=210 IKF=4 VAF=158 + ISE=7E-13 NE=1.38 NR=0.9988 BR=90 IKR=3 VAR=46 ISC=4.6515E-13 + NC=1.334 RB=0.2 RE=0.018 RC=0.016 CJC=93E-12 MJC=0.4348 + VJC=0.6477 CJE=0.63E-9 TF=0.75E-9 TR=20E-9 XTB=1.5 * *$ DSS8110Y* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=9-Sep-2014 *VERSION=1 * .MODEL DSS8110Y NPN IS=1.2e-13 NF=.975 ISE=50e-15 NE=1.35 BF=200 + ISC=3.5e-13 NC=1.25 BR=3 NR=.99 RE=0.029 VAF=30 IKF=4 + RB=0.33 RC=0.01 CJE=185e-12 VJE=0.7 MJE=0.345 CJC=25e-12 VJC=0.5 + MJC=0.345 TF=1.5e-9 TR=48e-9 QUASIMOD=1 RCO=.05 GAMMA=1.3e-9 NK=.7 + XTB=1.3 EG=1.2 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DST3904DJ*DIODES_INC_SPICE_MODEL DST3904DJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Feb2011 *VERSION=1 .MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DST3906DJ*DIODES_INC_SPICE_MODEL DST3906DJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DST3946DPJ*DIODES_INC_SPICE_MODEL DST3946DPJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .SUBCKT DST3946DPJ 1 2 3 4 5 6 Q1 6 2 1 DST3904DJ Q2 3 5 4 DST3906DJ .MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) .MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DST847BDJ*DIODES_INC_SPICE_MODEL DST847BDJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=15Mar2011 *VERSION=1 .MODEL DST847BDJ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 + RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DST847BPDP6*DIODES_INC_SPICE_MODEL DST847BPDP6 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.1 .SUBCKT DST847BPDP6 1 2 3 4 5 6 Q1 6 2 1 DST847BDJ Q2 3 5 4 DST857BDJ .MODEL DST847BDJ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97 NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m) .MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DST857BDJ*DIODES_INC_SPICE_MODEL DST857BDJ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Aug2012 *VERSION=1.2 .MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DVR5V0W*SRC=DVR5V0W;DI_DVR5V0W_NPN;BJTs NPN; Si; 18.0V 1.00A 100MHz Diodes Inc. BJTs .MODEL DI_DVR5V0W_NPN NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4 + IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m + XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=1.55n TR=238n EG=1.12 ) *SRC=DVR5V0W;DI_DVR5V0W_Zener;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DVR5V0W_Zener 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) DVRN6056*SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode *SYM=HZEN .SUBCKT DI_UDZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.99 .MODEL DF D ( IS=14.7p RS=3.10 N=1.10 + CJO=32.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=1.28 N=0.828 ) .ENDS DXT2010P5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19NOV2010 *VERSION=1 * .MODEL DXT2010P5 NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 + ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 + NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 + VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ DXT2011P5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19JAN11 *VERSION=1 * .MODEL DXT2011P5 NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ DXT2012P5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=04-Jun-2014 *VERSION=1 * .MODEL DXT2012P5 PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DXT2013P5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19JAN11 *VERSION=1 * .MODEL DXT2013P5 PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ DXT2014P5*DIODES_INC_SPICE_MODEL DXT2014P5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL DXT2014P5 PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DXT2222A*SRC=DXT2222A;DI_DXT2222A;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DXT2222A NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) DXT2907A*SRC=DXT2907A;DI_DXT2907A;BJTs PNP; Si; 60.0V 0.600A 360MHz - .MODEL DI_DXT2907A NPN (IS=6.60f NF=1.00 BF=151 VAF=139 + IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174 + XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300 + MJC=0.300 TF=416p TR=71.8n EG=1.12 ) DXT3904*SRC=DXT3904;DI_DXT3904;BJTs NPN; Si; 40.0V 0.200A 420MHz - .MODEL DI_DXT3904 NPN (IS=3.52e-016 NF=1.00 BF=233 VAF=114 + IKF=39.0m ISE=2.61f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=60.0m RE=0.655 RB=2.62 RC=0.262 + XTB=1.5 CJE=6.25p VJE=1.10 MJE=0.500 CJC=4.78p VJC=0.300 + MJC=0.300 TF=368p TR=59.4n EG=1.12 ) DXT3906*SRC=DXT3906;DI_DXT3906;BJTs PNP; Si; 40.0V 0.200A 510MHz - .MODEL DI_DXT3906 PNP (IS=2.87e-016 NF=1.00 BF=160 VAF=114 + IKF=88.5m ISE=120f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.705 RB=2.82 RC=0.282 + XTB=1.5 CJE=8.98p VJE=1.10 MJE=0.500 CJC=6.15p VJC=0.300 + MJC=0.300 TF=293p TR=50.4n EG=1.12 ) DXT458P5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=29May2013 *VERSION=1 * * .MODEL DXT458P5 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DXT5401* *Diodes DXT5401 Spice Model v1.0 Last Revised 16/02/09 * .MODEL DXT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ * DXT5551* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL DZT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ DXT5551P5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=13OCT2010 *VERSION=1 * .MODEL DXT5551P5 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ DXT651*SRC=DXT651;DI_DXT651;BJTs NPN; Si; 60.0V 3.00A 200MHz .MODEL DI_DXT651 NPN (IS=7.42f NF=1.00 BF=206 VAF=139 + IKF=1.98 ISE=13.4f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=3.00 RE=32.0m RB=0.128 RC=12.8m + XTB=1.5 CJE=390p VJE=1.10 MJE=0.500 CJC=48.3p VJC=0.300 + MJC=0.300 TF=626p TR=76.3n EG=1.12 ) DXT690BP5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=21Oct2013 *VERSION=1 * .MODEL DXT690BP5 NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DXT696BK* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=14-Jan-2014 *VERSION=1 * .MODEL DXT696BK NPN IS=.98476E-12 NF=.999 BF=705 IKF=0.8 VAF=235 +ISE=8.1E-14 NE=1.36 NR=1.002 BR=20 IKR=.8 VAR=26 ISC=.66E-12 +NC=1.15 RB=.07 RE=.125 RC=.098 CJC=25.4E-12 MJC=.47 VJC=.445 +CJE=270E-12 TF=1.301E-9 TR =690E-9 XTB=1.4 +QUASIMOD=1 RCO=24 GAMMA=75E-8 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DXT751*SRC=DXT751;DI_DXT751;BJTs PNP; Si; 60.0V 3.00A 145MHz .MODEL DI_DXT751 PNP (IS=8.12f NF=1.00 BF=171 VAF=139 + IKF=2.97 ISE=16.9f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=4.50 RE=27.3m RB=0.109 RC=10.9m + XTB=1.5 CJE=421p VJE=1.10 MJE=0.500 CJC=79.3p VJC=0.300 + MJC=0.300 TF=719p TR=71.5n EG=1.12 ) DXT790AP5*DIODES_INC_SPICE_MODEL DXT790AP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=25Oct2012 *VERSION=1 .MODEL DXT790AP5 PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DXTA42*SRC=DXTA42;DI_DXTA42;BJTs NPN; Si; 300V 0.500A 140MHz - .MODEL DI_DXTA42 NPN (IS=19.4f NF=1.00 BF=144 VAF=312 + IKF=58.6m ISE=31.4f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.895 RB=3.58 RC=0.358 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=8.82p VJC=0.300 + MJC=0.300 TF=751p TR=185n EG=1.12 ) DXTA92* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 * .MODEL DXTA92 PNP IS =4E-14 NF =1.01 BF =105 +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40 +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1 +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 +TF =0.7E-9 TR =1.6e-6 XTB=1.4 * *$ * * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DXTP19020DP5*DIODES_INC_SPICE_MODEL DXTP19020DP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=08/04/2013 *VERSION=1 .MODEL DXTP19020DP5 PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13 + IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15 + RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6 + CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL DXTP560BP5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=06Sep2013 *VERSION=1 * * .MODEL DXTP560BP5 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * DZ23C10*SRC=DZ23C10;DI_DZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.81 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=4.60 N=2.97 ) DZ23C11*SRC=DZ23C11;DI_DZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=4.60 N=2.97 ) DZ23C12*SRC=DZ23C12;DI_DZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=9.46 N=3.00 ) DZ23C13*SRC=DZ23C13;DI_DZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=14.5 N=3.00 ) DZ23C15*SRC=DZ23C15;DI_DZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=14.5 N=3.00 ) DZ23C16*SRC=DZ23C16;DI_DZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=24.5 N=3.00 ) DZ23C18*SRC=DZ23C18;DI_DZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=29.5 N=3.00 ) DZ23C20*SRC=DZ23C20;DI_DZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=39.5 N=3.00 ) DZ23C22*SRC=DZ23C22;DI_DZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=39.5 N=3.00 ) DZ23C24*SRC=DZ23C24;DI_DZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=54.5 N=3.00 ) DZ23C27*SRC=DZ23C27;DI_DZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=64.5 N=3.00 ) DZ23C2V7*SRC=DZ23C2V7;DI_DZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.190 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=84.5 N=3.00 ) DZ23C30*SRC=DZ23C30;DI_DZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 ) DZ23C33*SRC=DZ23C33;DI_DZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 ) DZ23C36*SRC=DZ23C36;DI_DZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 ) DZ23C39*SRC=DZ23C39;DI_DZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 ) DZ23C3V0*SRC=DZ23C3V0;DI_DZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.507 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61f RS=79.5 N=3.00 ) DZ23C3V3*SRC=DZ23C3V3;DI_DZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.799 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74f RS=79.5 N=3.00 ) DZ23C3V6*SRC=DZ23C3V6;DI_DZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.12 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01f RS=74.5 N=3.00 ) DZ23C3V9*SRC=DZ23C3V9;DI_DZ23C3V9;Diodes;Zener <=10V; 3.90V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.41 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=74.5 N=3.00 ) DZ23C43*SRC=DZ23C43;DI_DZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.0 .MODEL DF D ( IS=3.35p RS=27.8 N=1.10 + CJO=22.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 ) DZ23C47*SRC=DZ23C47;DI_DZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. - *SYM=HZEN .SUBCKT DI_DZ23C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 43.9 .MODEL DF D ( IS=3.07p RS=27.6 N=1.10 + CJO=22.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 ) DZ23C4V3*SRC=DZ23C4V3;DI_DZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.80 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=74.5 N=3.00 ) DZ23C4V7*SRC=DZ23C4V7;DI_DZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=64.5 N=3.00 ) DZ23C51*SRC=DZ23C51;DI_DZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DZ23C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.5 .MODEL DF D ( IS=2.83p RS=1.77 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 ) DZ23C5V1*SRC=DZ23C5V1;DI_DZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.74 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=44.5 N=3.00 ) DZ23C5V6*SRC=DZ23C5V6;DI_DZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.33 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=24.5 N=3.00 ) DZ23C6V2*SRC=DZ23C6V2;DI_DZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=2.30 N=1.49 ) DZ23C6V8*SRC=DZ23C6V8;DI_DZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=3.45 N=2.23 ) DZ23C7V5*SRC=DZ23C7V5;DI_DZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=3.45 N=2.23 ) DZ23C8V2*SRC=DZ23C8V2;DI_DZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.57 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=3.45 N=2.23 ) DZ23C9V1*SRC=DZ23C9V1;DI_DZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. *SYM=HZEN .SUBCKT DI_DZ23C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.46 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=3.45 N=2.23 ) DZL6V8AXV3*SRC=DZL6V8AXV3;DZL6V8AXV3;Diodes;Zener <=10V; 6.80V 0.220W DIODES INC *SYM=HZEN .SUBCKT DZL6V8AXV3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=65.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.67f RS=3.45 N=2.23 ) .ENDS DZT2222A*SRC=DZT2222A;DI_DZT2222A;BJTs NPN; Si; 40.0V 0.600A 410MHz - .MODEL DI_DZT2222A NPN (IS=9.69f NF=1.00 BF=272 VAF=114 + IKF=0.493 ISE=11.7f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.253 RB=1.01 RC=0.101 + XTB=1.5 CJE=29.0p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=362p TR=60.3n EG=1.12 ) DZT2907A*SRC=DZT2907A;DI_DZT2907A;BJTs PNP; Si; 60.0V 0.600A 360MHz - .MODEL DI_DZT2907A NPN (IS=6.60f NF=1.00 BF=151 VAF=139 + IKF=0.394 ISE=17.3f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.600 RE=0.434 RB=1.74 RC=0.174 + XTB=1.5 CJE=31.0p VJE=1.10 MJE=0.500 CJC=14.8p VJC=0.300 + MJC=0.300 TF=416p TR=71.8n EG=1.12 ) DZT5401* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL DZT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ DZT5551* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL DZT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * * DZTA42*SRC=DZTA42;DI_DZTA42;BJTs NPN; Si; 300V 0.500A 140MHz - .MODEL DI_DZTA42 NPN (IS=19.4f NF=1.00 BF=144 VAF=312 + IKF=58.6m ISE=31.4f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.895 RB=3.58 RC=0.358 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=8.82p VJC=0.300 + MJC=0.300 TF=751p TR=185n EG=1.12 ) ES1A*SRC=ES1A;DI_ES1A;Diodes;Si; 50.0V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1A D ( IS=123n RS=42.0m BV=50.0 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) ES1B*SRC=ES1B;DI_ES1B;Diodes;Si; 100V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1B D ( IS=123n RS=42.0m BV=100 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) ES1C*SRC=ES1C;DI_ES1C;Diodes;Si; 150V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1C D ( IS=123n RS=42.0m BV=150 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) ES1D*SRC=ES1D;DI_ES1D;Diodes;Si; 200V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1D D ( IS=123n RS=42.0m BV=200 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) ES1G*SRC=ES1G;DI_ES1G;Diodes;Si; 400V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1G D ( IS=373n RS=64.3m BV=400 IBV=5.00u + CJO=18.5p M=0.333 N=2.84 TT=28.8n ) ES2A*SRC=ES2A;DI_ES2A;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2A D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ES2AA***************************************************************************************** *SRC=ES2AA;DI_ES2AA;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2AA D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** ES2B*SRC=ES2B;DI_ES2B;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2B D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ES2BA**************************************************************************************** SRC=ES2BA;DI_ES2BA;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2BA D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** ES2C*SRC=ES2C;DI_ES2C;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2C D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ES2CA*************************************************************************************** *SRC=ES2CA;DI_ES2CA;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2CA D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** ES2D*SRC=ES2D;DI_ES2D;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2D D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ES2DA***************************************************************************************** *SRC=ES2DA;DI_ES2DA;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2DA D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** ES2G*SRC=ES2G;DI_ES2G;Diodes;Si; 400V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2G D ( IS=3.92n RS=21.0m BV=400 IBV=5.00u + CJO=83.5p M=0.333 N=1.95 TT=36.0n ) ES3A*SRC=ES3A;DI_ES3A;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3A D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) ES3AB*SRC=ES3AB;DI_ES3AB;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3AB D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) ES3B*SRC=ES3B;DI_ES3B;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3B D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) ES3BB*SRC=ES3BB;DI_ES3BB;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3BB D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) ES3C*SRC=ES3C;DI_ES3C;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3C D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) ES3CB*SRC=ES3CB;DI_ES3CB;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3CB D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) ES3D*SRC=ES3D;DI_ES3D;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3D D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) ES3DB*SRC=ES3DB;DI_ES3DB;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3DB D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) FCX1047A*ZETEX FCX1047A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1047A NPN IS=9.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=400 IKR=5 VAR=15 + ISC=8E-13 NC=1.4 RB=0.1 RE=0.017 RC=0.010 + CJC=195.4E-12 CJE=540.4E-12 MJC=0.257 MJE=0.359 + VJC=0.390 VJE=0.753 TF=450E-12 TR=1.2E-9 * *$ * FCX1051A*ZETEX FCX1051A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * FCX1053A*ZETEX FCX1053A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * FCX1147A*ZETEX FCX1147A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 + VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1 + IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12 + CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9 * *$ * FCX1149A*ZETEX FCX1149A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520 + VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40 + VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 + CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739 + TF=1e-9 TR=3.5e-9 * *$ * FCX1151A*ZETEX FCX1151A Spice Model v1.0 Last Revised 3/1/03 * .MODEL FCX1151A PNP IS=1.7e-12 NF=1.004 ISE=1.02e-13 NE=1.55 BF=562 + VAF=26.01 IKF=3.5 NR=.97 ISC=1.5e-13 NC=1.3 BR=38 + VAR=2.41 IKR=0.3 RE=25.37e-3 RB=250e-3 RC=25e-3 + CJE=440e-12 CJC=160e-12 VJC=1.058 MJC=0.5678 + TF=0.8e-9 TR=55.5e-9 * *$ * FCX458*ZETEX FCX458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FCX458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * FCX491.MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ FCX491A*ZETEX FCX491 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ * FCX493*ZETEX FCX493 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FCX493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * FCX495* .MODEL FCX495 NPN IS=1E-13 NF=1 BF=205 IKF=4 VAF=300 ISE=1E-13 + NE=1.5 NR=0.98 BR=24 VAR=45 ISC=1e-13 NC=1.2 RB=0.4 RE=0.07 + RC=0.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12 + MJE=0.33 VJE=0.68 TF=0.8E-9 TR=120e-9 XTB=1.4 QUASIMOD=1 * *$ FCX555* .MODEL FCX555 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 + VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 + NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 + RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 + CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 + TF=0.7E-9 TR=2e-7 * *$ FCX558*ZETEX FCX558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FCX558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * FCX589*ZETEX FCX589 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FCX589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * FCX591.MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ FCX591A*ZETEX FCX591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FCX591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * FCX593.MODEL FCX593 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ FCX596*ZETEX FCX596 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FCX596 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 +TF=0.7E-9 TR=2e-7 * *$ * FCX605*ZETEX FCX605 Spice Model v1.0 Last Revised 27/04/05 * .SUBCKT FCX605 1 2 3 * C B E Q1 1 2 4 SUB605 Q2 1 4 3 SUB605 3.46 * .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS FCX605 * *$ * FCX617*ZETEX FCX617 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX617 NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9 * *$ * FCX619*ZETEX FCX619 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX619 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * FCX658A*ZETEX FCX658A Spice Model v2.0 Last Revised 21/1/05 * .MODEL FCX658A NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154 +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48 +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36 +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55 +QUASIMOD=1 RCO=38 GAMMA=20E-8 * *$ * FCX688B*ZETEX FCX688B Spice Model v1.0 Last Revised 2/1/03 * .MODEL FCX688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25 +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12 +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46 +CJE=280E-12 TF =.93E-9 TR =1.05E-9 * *$ * FCX690B*ZETEX FCX690B Spice Model v2.0 Last revision 12/07/07 * .MODEL FCX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * FCX705* *Zetex FCX705 Spice Model v1.0 Last Revised 12/08/08 * .SUBCKT FCX705 1 2 3 * C B E Q1 1 2 4 SUB705 Q2 1 4 3 SUB705 4 * .MODEL SUB705 PNP IS=3.35584E-14 BF=85 VAF=212 NF=1.002 IKF=0.817 + ISE=3.6E-13 NE=4.1 BR=24 VAR=6 NR=0.999 IKR=0.114 ISC=1.406E-13 NC=1.13 + RB=1.1 RE=0.4 RC=0.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=0.595 .ENDS FCX705 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA FCX717*ZETEX FCX717 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FCX717 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * FCX718*ZETEX FCX718 Spice Model v1.0 Last Revised 11/03/02 * .MODEL FCX718 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * FCX789A*ZETEX FCX789A Spice Model v1.0 Last Revised 2/1/03 * .MODEL FCX789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5 +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14 +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26 +CJE=300E-12 TF=0.73E-9 TR=4.2E-9 * *$ * FCX790A*ZETEX FCX790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL FCX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * FMMT38C*ZETEX FMMT38C Spice Model v1.0 Last Revised 12/6/02 * .SUBCKT FMMT38C 1 2 3 * C B E Q1 1 2 4 SUB38C Q2 1 4 3 SUB38C 12.75 * .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9 .ENDS FMMT38C * *$ * FMMT413*ZETEX FMMT413 Spice Model v1.0 Last Revised 15/10/04 * .SUBCKT FMMT413 16 15 14 *Pins_____________C__B__E Q_Q1 9 8 7 QMOD_1 R_R1 5 6 100 R_R2 5 4 100 R_R3 12 3 100 R_R4 3 1 500 R_R5 10 2 2k R_R6 10 11 1.5 D_D1 10 5 DZ20 D_D2 4 2 DZ500 D_D3 10 3 DZ200 D_D4 1 2 DZ500 D_D5 7 9 DZ300 C_C1 10 2 20p S_S1 13 11 2 10 SMOD1 S_S2 9 13 2 10 SMOD2 S_S3 8 10 2 10 SMOD3 V_H1 7 10 0 H1 6 10 V_H1 50 E1 12 10 11 10 10 L_L1 9 16 1nH L_L2 15 8 2nH L_L3 10 14 2nH .Model QMOD_1 NPN IS =1.8E-14 ISE=5.0E-14 NF =.9955 NE =1.46 +BF =400 BR =35.5 IKF=.14 IKR=.03 ISC=1.72E-13 NC =1.27 NR =1.005 +RB =.56 RE =.6 RC =.25 VAF=80 VAR=12.5 CJE=13E-12 CJC=4E-12 +VJC=.54 MJC=.33 TF =.64E-9 TR =50.72E-9 .Model DZ20 D Is=1E-15 Bv=20 Ibv=100u .Model DZ200 D Is=1E-15 Bv=200 Ibv=100u .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u .Model SMOD1 VSWITCH Roff=1e10 Ron=0.05 Voff=4.3 Von=4.6 .Model SMOD2 VSWITCH Roff=1e3 Ron=.5 Voff=4.5 Von=9 .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25 .ENDS FMMT413 * *$ * FMMT415*ZETEX FMMT415 Spice Model v1.0 Last Revised 14/01/03 * .SUBCKT FMMT415 16 15 14 *Pins______________C__B__E Q_Q1 9 8 7 QMOD_1 R_R1 5 6 100 R_R2 5 4 100 R_R3 12 3 100 R_R4 3 1 500 R_R5 10 2 2k R_R6 10 11 2 D_D1 10 5 DZ20 D_D2 4 2 DZ500 D_D3 10 3 DZ200 D_D4 1 2 DZ500 D_D5 7 9 DZ300 C_C1 10 2 20p S_S1 13 11 2 10 SMOD1 S_S2 9 13 2 10 SMOD2 S_S3 8 10 2 10 SMOD3 V_H1 7 10 0 H1 6 10 V_H1 50 E1 12 10 11 10 10 L_L1 9 16 1nH L_L2 15 8 2nH L_L3 10 14 2nH .Model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4 +VAF=1900 ISE=1E-12 NE =1.6 +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9 +RB =0.4 RE =0.1 RC =0.1 +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12 +TF =1.3E-9 TR =2.3e-7 .Model DZ20 D Is=1E-15 Bv=20 Ibv=100u .Model DZ200 D Is=1E-15 Bv=200 Ibv=100u .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u .Model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6 .Model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9 .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25 .ENDS FMMT415 * *$ * FMMT417*ZETEX FMMT417 Spice Model v2.0 Last Revised 23/03/07 * .SUBCKT FMMT417 16 15 14 *Pins______________C__B__E Q_Q1 9 8 7 QMOD_1 R_R1 5 6 100 R_R2 5 4 100 R_R3 12 3 100 R_R4 3 1 500 R_R5 10 2 2k R_R6 10 11 2 D_D1 10 5 DZ20 D_D2 4 2 DZ500 D_D3 10 3 DZ200 D_D4 1 2 DZ500 D_D5 7 9 DZ350 C_C1 10 2 20p S_S1 13 11 2 10 SMOD1 S_S2 9 13 2 10 SMOD2 S_S3 8 10 2 10 SMOD3 V_H1 7 10 0 H1 6 10 V_H1 50 E1 12 10 11 10 10 L_L1 9 16 1nH L_L2 15 8 2nH L_L3 10 14 2nH .model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4 +VAF=1900 ISE=1E-12 NE =1.6 +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9 +RB =0.4 RE =0.1 RC =0.1 +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12 +TF =1.3E-9 TR =2.3e-7 .model DZ20 D Is=1E-15 Bv=20 Ibv=100u .model DZ200 D Is=1E-15 Bv=200 Ibv=100u .model DZ350 D Is=1E-15 Rs=0.1 Bv=350 Ibv=100u .model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u .model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6 .model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9 .model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25 .ENDS FMMT417 * *$ * FMMT449*ZETEX FMMT449 Spice Model v1.0 Last Revised 11/11/04 * .MODEL FMMT449 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * FMMT451* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JAN2011 *VERSION=1 * .MODEL FMMT451 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8 +ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13 +NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12 +TR =85E-9 VJC=.505 MJC=.39 * *$ FMMT455* .MODEL FMMT455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14 +NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1 +RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505 +MJC=.455 * *$ FMMT458*ZETEX FMMT458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FMMT458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * FMMT459*ZETEX FMMT459 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT459 NPN IS=4E-14 NF=1 BF=130 VAF=1000 ISE=4E-13 NE=1.59 +RCO=60 GAMMA=1E-7 NR=1 BR=10 VAR=100 ISC=1e-10 NC=1.6 IKR=30E-3 +RB=1 RE=.1 RC=.1 CJC=9E-12 MJC=0.36 VJC=0.51 CJE=99E-12 MJE=0.42 +VJE=0.88 TF=2E-9 TR=1.2e-6 XTB=1.5 QUASIMOD=1 * *$ * FMMT489*ZETEX FMMT489 Spice Model v1.0 Last Revised 13/10/93 * .MODEL FMMT489 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * FMMT491.MODEL FMMT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ FMMT491A*ZETEX FMMT491 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ * FMMT493*ZETEX FMMT493 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * FMMT493A*ZETEX FMMT493A Spice Model v1.0 Last Revised 30/3/06 * .MODEL FMMT493A NPN IS =6E-14 NF =0.99 BF =1100 IKF=1.1 +NK=0.7 VAF=270 ISE=0.3E-14 NE =1.26 NR =0.98 BR =70 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=8 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * FMMT494*ZETEX FMMT494 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT494 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 NK=0.7 VAF=270 +ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 VAR=27 ISC=1.2e-13 NC =1.2 +RB =0.2 RE =0.08 RC =0.08 RCO=7.5 GAMMA=1E-8 CJC=15.9E-12 MJC=0.4 +VJC=0.51 CJE=108E-12 MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 +QUASIMOD=1 * *$ * FMMT495*ZETEX FMMT495 Spice Model v1.0 Last Revised 8/5/2006 * .MODEL FMMT495 NPN IS =1E-13 NF =1 BF =205 IKF=4 VAF=300 ISE=1E-13 +NE =1.5 NR =0.98 BR =24 VAR=45 ISC=1e-13 NC =1.2 RB =.4 RE =.07 +RC =.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12 +MJE=0.33 VJE=0.68 TF =0.8E-9 TR =120e-9 XTB=1.4 QUASIMOD=1 * *$ * FMMT497*ZETEX FMMT497 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT497 NPN IS =5E-14 NF =1 +BF =250 IKF=500E-3 VAF=1020 ISE=2.5E-14 NE =1.38 +RCO=60 GAMMA=10E-7 NR =1 BR =5 IKR=0 VAR=55 ISC=5e-12 +NC =1.31 RB =3 RE =0.05 RC =0.05 QUASIMOD=1 +CJC=10.95E-12 MJC=0.265 VJC=0.3905 CJE=125.2E-12 +TF =0.6E-9 TR =0.66e-6 XTB=1.4 * *$ * FMMT549*ZETEX FMMT549 Spice Model v1.0 Last Revised 11/10/94 * .MODEL FMMT549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * FMMT551*ZETEX FMMT551 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT551 PNP IS =3.2E-14 BF =120 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =35 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * FMMT555*ZETEX FMMT555 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT555 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 +TF=0.7E-9 TR=2e-7 * *$ * FMMT558*ZETEX FMMT558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FMMT558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 *$ * FMMT560*ZETEX FMMT560 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * *$ * FMMT589*ZETEX FMMT589 Spice Model v1.0 Last Revised 11/10/94 * .MODEL FMMT589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * FMMT591* .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ FMMT591A*ZETEX FMMT591 Spice Model v1.0 Last Revised 8/8/05 * .MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * FMMT593*ZETEX FMMT593 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT593 PNP IS =2E-13 NF =1 BF =300 IKF=0.8 +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 +NR =1 BR =20 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1 +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 +TF =0.8E-9 TR =70e-9 XTB=1.4 * *$ * FMMT596*ZETEX FMMT596 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT596 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2 +VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8 +NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06 +RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4 +CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12 +TF=0.7E-9 TR=2e-7 * *$ * FMMT597*ZETEX FMMT597 Spice Model v1.0 Last Revised 20/09/07 * .MODEL FMMT597 PNP IS=7E-14 NF=1 BF=155 IKF=1.4 VAF=320 ISE=6E-14 + NE=1.8 NR=1 BR=3 IKR=0.3 VAR=56 ISC=5e-13 NC=1.12 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=41 GAMMA=13E-8 CJC=20.7E-12 MJC=0.38 VJC=0.44 + CJE=126E-12 MJE=0.41 VJE=0.8 TF=1.1E-9 TR=30e-7 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * *$ * FMMT614*ZETEX FMMT614 Spice Model v1.0 Last Revised 2/8/2004 * .SUBCKT FMMT614 1 2 3 * C B E Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 .ENDS FMMT614 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 * *$ * FMMT617*ZETEX FMMT617 Spice Model v1.0 Last Revised 19/4/94 * .MODEL FMMT617 NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9 * *$ * FMMT618*ZETEX FMMT618 Spice Model v1.0 Last Revised 8/7/93 * .MODEL FMMT618 NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * *$ * FMMT619*ZETEX FMMT619 Spice Model v1.0 Last Revised 8/7/93 * .MODEL FMMT619 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * FMMT620*ZETEX FMMT620 Spice Model v1.0 Last Revised 12/12/02 * .MODEL FMMT620 NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5 +ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12 +NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48 +MJC=0.41 TF =9E-10 TR=3.5E-8 * *$ * FMMT624*ZETEX FMMT624 Spice Model v1.0 Last Revised 12/7/93 * .MODEL FMMT624 NPN IS =6.855E-13 NF =1.0037 BF =540 IKF=0.95 VAF=231 + ISE=2.23E-13 NE =1.4195 NR =1.0024 BR =100 IKR=2 + VAR=61 ISC=3E-12 NC =1.2276 RB =0.036 RE =0.065 + RC =0.1 CJC=28E-12 MJC=0.4348 VJC=0.4934 CJE=207E-12 + TF =0.85E-9 TR =49E-9 * *$ * FMMT625*ZETEX FMMT625 Spice Model v1.0 Last Revised 13/7/93 * .MODEL FMMT625 NPN IS =6.2024E-13 NF =1.0037 BF =450 IKF=0.6 VAF=428 + ISE=2.3242E-13 NE =1.4689 NR =1.0033 BR =250 IKR=1.7 + VAR=73 ISC=7.66E-13 NC =1.1546 RB =0.036 RE =0.090 + RC =0.143 CJC=24.5E-12 MJC=0.4246 VJC=0.4425 CJE=210E-12 + TF =0.99E-9 TR =60E-9 * *$ * FMMT634*ZETEX FMMT634 Spice Model v1.0 Last Revised 17/10/97 * .SUBCKT FMMT634 1 2 3 * C B E Q1 5 2 4 SUB634 Q2 5 4 3 SUB634 4.45 R1 1 5 .27 * .MODEL SUB634 NPN IS=4.5E-14 ISE=1E-14 NF =1 NE =1.45 BF =250 IKF=.16 +RE=.09 RB=1 BR =12 IKR=.15 VAF=240 CJE=65E-12 CJC=7E-12 +VJC=.85 MJC=.45 TF =.95E-9 TR =300E-9 .ENDS FMMT634 * *$ * FMMT6517*ZETEX FMMT6517 Spice Model v1.0 Last Revised 11/06/2007 * .MODEL FMMT6517 NPN IS=5.32E-14 NF=0.992 BF=210 IKF=0.5 VAF=1050 +XTB=1.4 ISE=2.1E-14 NE=1.385 NR=1.05 BR=16.3 IKR=1.8 VAR=99 +ISC=6.42E-12 NC=1.25 RB=0.5 RE=0.224 RC=0.134 CJC=8.5E-12 +MJC=0.3966 VJC=0.4332 CJE=122E-12 TF=1.66E-9 TR=16E-6 +QUASIMOD=1 RCO=70 GAMMA=1.6E-7 VO=10 * *$ * FMMT6520*ZETEX FMMT6520 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMT6520 PNP IS =4E-14 NF =1.01 BF =105 +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40 +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1 +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 +TF =0.7E-9 TR =1.6e-6 XTB=1.4 * *$ * FMMT717*ZETEX FMMT717 Spice Model v1.0 Last Revised 25/3/94 * .MODEL FMMT717 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * FMMT718*ZETEX FMMT718 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT718 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * FMMT720*ZETEX FMMT720 Spice Model v2.0 Last Revised 1/5/03 * .MODEL FMMT720 PNP IS =6.261E-13 BF =500 IKF =1.4 VAF =28.4 +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 +TRC1=.0025 * *$ * FMMT722*ZETEX FMMT722 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT722 PNP IS =6.348E-13 BF =450 IKF =1.25 VAF =30.24 + ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 + VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09 + RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 + CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 + TR =57E-9 * *$ * FMMT723*ZETEX FMMT723 Spice Model v1.0 Last Revised 15/12/93 * .MODEL FMMT723 PNP IS =5.5E-13 BF =440 IKF =1 VAF =50.88 + ISE=1.554E-13 NE =1.477 NR =1.03 BR =30 IKR=0.7 + VAR=13.79 ISC=1.3E-12 NC =1.198 RB =1.5 RE =0.02 + RC =0.14 CJC=45.74E-12 MJC=0.4889 VJC=0.711 + CJE=204.3E-12 MJE=0.5105 VJE=0.9711 TF =0.63E-9 + TR =95E-9 * *$ * FMMT734*ZETEX FMMT734 Spice Model v1.0 Last Revised 29/8/2006 * .SUBCKT FMMT734 1 2 3 * C B E Q1 1 2 4 SUB734 0.4 Q2 1 4 3 SUB734 2 * .MODEL SUB734 PNP IS =2E-13 NF =1 BF =330 IKF=0.8 +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 +NR =1 BR =20 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1 +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 +TF =0.8E-9 TR =10e-9 XTB=1.4 .ENDS FMMT734 * *$ * FMMTA06* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23JUN10 *VERSION=1 * .MODEL FMMTA06 NPN IS=3.8E-14 NF=1.008 BF=150 IKF=2 VAF=300 XTB=1.4 + ISE=1E-14 NE=1.22 NR=1.015 BR=6 IKR=1.8 VAR=48 ISC=5E-13 NC=1.2 + RB=1 RE=0.155 RC=0.061 CJC=18E-12 MJC=0.31 VJC=0.45 CJE=65E-12 + MJE=0.34 VJE=0.7 TF=8E-10 TR=6E-7 QUASIMOD=1 RCO=17 GAMMA=1E-7 VO=20 * *$ FMMTA13*ZETEX FMMTA13 Spice Model v1.1 Last Revised 6/1/03 * .SUBCKT FMMTA13 1 2 3 * C B E Q1 1 2 4 SUB38B Q2 1 4 3 SUB38B 12.75 * .MODEL SUB38B NPN IS =1.1E-14 ISE=7.1E-15 NF =1.012 NE =1.4758 +BF =147 IKF=.12 BR =15 IKR=.05 RE =1.3 RC =.5 RB =.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF =1.15E-9 TR =75E-9 .ENDS FMMTA13 * *$ * FMMTA14*ZETEX FMMTA14 Spice Model v1.0 Last Revised 12/6/2002 * .SUBCKT FMMTA14 1 2 3 * C B E Q1 1 2 4 SUB38C Q2 1 4 3 SUB38C 12.75 * .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9 .ENDS FMMTA14 * *$ * FMMTA42*ZETEX FMMTA42 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3 +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7 +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 +RB =7 RE =0.07 RC =0.07 QUASIMOD=1 +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 +TF =1.1E-9 TR =0.9e-6 XTB=1.4 * *$ * FMMTA56* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=1 * .MODEL FMMTA56 PNP IS=2E-13 NF=1 BF=300 IKF=0.8 + VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9 + NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25 + RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1 + CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 + TF=0.8E-9 TR=70e-9 XTB=1.4 * *$ FMMTA92*ZETEX FMMTA92 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FMMTA92 PNP IS =4E-14 NF =1.01 BF =105 +IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59 +GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40 +ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1 +CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12 +TF =0.7E-9 TR =1.6e-6 XTB=1.4 * *$ * FMMTL618*ZETEX FMMTL618 Spice Model v1.0 Last Revised 25/06/98 * .MODEL FMMTL618 NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 +NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5 +RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 +TR =30e-9 * *$ * FMMTL717*ZETEX FMMTL717 Spice Model v1.0 Last Revised 28/6/00 * .MODEL FMMTL717 PNP IS=3E-13 NF=1 BF=450 IKF=1 VAF=17 +ISE=5E-14 NE=1.6 NR=1 BR=80 VAR=7 ISC=5e-14 NC=1.45 +RB=1.2 RE=0.076 RC=0.076 +CJC=62.5E-12 MJC=0.51 VJC=0.559 CJE=102E-12 +TF =0.68E-9 TR =2e-9 * *$ * FMMTL718*ZETEX FMMTL718 Spice Model v1.0 Last Revised 7/8/00 * .MODEL FMMTL718 PNP IS=2e-13 BF=550 XTB=1.4 +NF=1 VAF=21 IKF=0.25 ISE=1e-13 NE=1.38 BR=55 +NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 +RE=0.06 RB=0.7 RC=0.06 +CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 +VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 * *$ * FZT1047A*ZETEX FZT1047A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1047A NPN IS=9.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=400 IKR=5 VAR=15 + ISC=8E-13 NC=1.4 RB=0.1 RE=0.017 RC=0.010 + CJC=195.4E-12 CJE=540.4E-12 MJC=0.257 MJE=0.359 + VJC=0.390 VJE=0.753 TF=450E-12 TR=1.2E-9 * *$ * FZT1048A*ZETEX FZT1048A Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 + CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299 + VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9 * *$ * FZT1049A*ZETEX FZT1049A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1049A NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36 + VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9 * *$ * FZT1051A*ZETEX FZT1051A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * FZT1053A*ZETEX FZT1053A Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * FZT1147A*ZETEX FZT1147A Spice Model v1.0 Last Revised 10/12/96 * .MODEL FZT1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 + VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1 + IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12 + CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9 * *$ * FZT1149A*ZETEX FZT1149A Spice Model v1.0 Last Revised 10/1/97 * .MODEL FZT1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520 + VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40 + VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 + CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739 + TF=1e-9 TR=3.5e-9 * *$ * FZT1151A*ZETEX FZT1151A Spice Model v1.0 Last Revised 12/12/96 * .MODEL FZT1151A PNP IS=1.7e-12 NF=1.004 ISE=1.02e-13 NE=1.55 BF=562 + VAF=26.01 IKF=3.5 NR=.97 ISC=1.5e-13 NC=1.3 BR=38 + VAR=2.41 IKR=0.3 RE=25.37e-3 RB=250e-3 RC=25e-3 + CJE=440e-12 CJC=160e-12 VJC=1.058 MJC=0.5678 + TF=0.8e-9 TR=55.5e-9 * *$ * FZT458*ZETEX FZT458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FZT458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * FZT489*ZETEX FZT489 Spice Model v1.0 Last Revised 11/11/04 * .MODEL FZT489 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * FZT491.MODEL FZT491 NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 +ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF=0.71E-9 TR=2.5E-9 * *$ FZT491A*ZETEX FZT491A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT491A NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF =0.71E-9 TR =2.5E-9 * *$ * FZT493*ZETEX FZT493 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT493 NPN IS =6E-14 NF =0.99 BF =250 IKF=0.9 +NK=0.7 VAF=270 ISE=1E-14 NE =1.2 NR =0.98 BR =30 IKR=0.5 +VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=5 +GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12 +MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1 * *$ * FZT549*ZETEX FZT549 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FZT549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * FZT558*ZETEX FZT558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL FZT558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * FZT560*ZETEX FZT560 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * *$ * FZT589*ZETEX FZT589 Spice Model v1.0 Last Revised 26/01/05 * .MODEL FZT589 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 +ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 +ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 +CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 +MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * FZT591.MODEL FZT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ FZT591A*ZETEX FZT591A Spice Model v1.0 Last Revised 8/8/05 * .MODEL FZT591A PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * FZT600*ZETEX FZT600 Spice Model v1.0 Last Revised 23/12/04 * .SUBCKT FZT600 1 2 3 * C B E Q1 1 2 4 SUB600 Q2 1 4 3 SUB600 2.74 * .MODEL SUB600 NPN IS=8.354E-14 BF=70 VAF=18.3 IKF=0.25 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 +MJC=0.3607 TF=1E-9 TR=1800E-9 .ENDS FZT600 * *$ * FZT600B* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JAN2011 *VERSION=1 *PINS C B E * .SUBCKT FZT600B 1 2 3 Q1 1 2 4 SUB601B Q2 1 4 3 SUB601B 2.74 * .MODEL SUB601B NPN IS=8.354E-14 BF=130 VAF=18.3 IKF=0.2 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 MJC=0.3607 +TF=1E-9 TR=1800E-9 .ENDS * *$ FZT603*ZETEX FZT603 Spice Model v1.0 Last Revised 1/7/03 * .SUBCKT FZT603 1 2 3 * C B E Q1 1 2 4 SUB603 Q2 1 4 3 SUB603 3.46 * .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13 +NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3 +RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9 +XTB=1.5 .ENDS * *$ * FZT605*ZETEX FZT605 Spice Model v1.0 Last Revised 27/04/05 * .SUBCKT FZT605 1 2 3 * C B E Q1 1 2 4 SUB605 Q2 1 4 3 SUB605 3.46 * .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS FZT605 * *$ * FZT649*ZETEX FZT649 Spice Model v1.0 Last Revised 17/7/90 * .MODEL FZT649 NPN IS =3E-13 BF =225 VAF=80 IKF=2.8 ISE=1.1E-13 NE =1.37 +BR =110 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.3 RE =.063 +RC =.07 CJE=325E-12 TF =1E-9 CJC=70E-12 TR =10E-9 * *$ * FZT651*ZETEX FZT651 Spice Model v1.0 Last Revised 16/1/91 * .MODEL FZT651 NPN IS =2.218E-13 NF =.9956 BF =230 IKF=2 VAF=100 ISE=2.9E-14 +NE =1.35 NR =.995 BR =56 IKR=1 VAR=30 ISC=2.971E-13 NC =1.321 RB =.04 +RE =.075 RC =.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF =.77E-9 +TR =27E-9 * *$ * FZT653*ZETEX FZT653 Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT653 NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 + ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 + CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 + TF =0.78E-9 TR =30E-9 * *$ * FZT655*ZETEX FZT655 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT655 NPN IS=3.2E-13 NF=1.0041 BF=200 IKF=2 VAF=85 RCO=4 +GAMMA=5E-9 ISE=1.5E-13 NE =1.26 NR=1.0008 BR=20 VAR=51 ISC=6E-14 +NC=1.079 RB =0.1 RE =0.045 CJC=65E-12 MJC=0.4896 VJC=0.7676 +CJE=350E-12 TF=1.5E-9 TR=3E-7 XTB=1.4 QUASIMOD=1 * *$ * FZT657*ZETEX FZT657 Spice Model v1.0 Last Revised 25/7/05 * .MODEL FZT657 NPN IS=2.3E-13 NF=1.003 BF=150 IKF=1.35 +VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE =1.33 NR=1.001 +BR=8 VAR=43 ISC=1.8E-13 NC=1.19 RC=0.085 RB =0.35 RE =0.2 +CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7 +XTB=1.4 QUASIMOD=1 * *$ * FZT658*ZETEX FZT658 Spice Model v2.0 Last Revised 21/1/05 * .MODEL FZT658 NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154 +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48 +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36 +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55 +QUASIMOD=1 RCO=38 GAMMA=20E-8 * *$ * FZT688B*ZETEX FZT688B Spice Model v1.0 Last Revised 8/11/90 * .MODEL FZT688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25 +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12 +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46 +CJE=280E-12 TF =.93E-9 TR =1.05E-9 * *$ * FZT689B*ZETEX FZT689B Spice Model v1.1 Last Revised 12/10/04 * .MODEL FZT689B NPN IS =1.8E-12 NF =0.994 BF =1500 IKF=3.2 VAF=24 +ISE=.218E-12 NE =1.345 NR =0.996 BR =310 IKR=.8 VAR=4 ISC=0.36E-12 +NC =1.26 RB =.2 RE =.035 RC =.036 CJC=74E-12 MJC=.35 VJC=.485 +CJE=248E-12 TF =0.72E-9 TR =4.9E-9 XTB=1.13 TRE1=4E-3 ITF=5e-3 * *$ * FZT690B*ZETEX FZT690B Spice Model v2.0 Last revision 12/07/07 * .MODEL FZT690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * FZT692B*ZETEX FZT692B Spice Model v1.0 Last Revised 31/10/90 * .MODEL FZT692B NPN IS =1.87E-12 NF =.9983 BF =1400 IKF=0.73 VAF=29 +ISE=.21E-12 NE =1.378 NR =.997 BR =68 IKR=.55 VAR=12 ISC=.44E-12 +NC =1.14 RB =.2 RE =.05 RC =.048 CJC=42.5E-12 MJC=.475 VJC=.625 +CJE=233E-12 TF =.77E-9 TR =39E-9 *Note: This Model may be inaccurate for collector currents above 1.5A. * *$ * FZT694B*ZETEX FZT694B Spice Model v1.0 Last Revised 1/11/90 * .MODEL FZT694B NPN IS =1.59E-12 NF =1.001 BF =1009 IKF=0.26 VAF=45 +ISE=.253E-12 NE =1.445 NR =1 BR =40 IKR=1 VAR=30 ISC=0.326E-12 +NC =1.075 RB =0.2 RE =0.065 RC =0.075 CJC=35.5E-12 MJC=.465 +VJC=.515 CJE=258E-12 TF =.763E-9 TR =130E-9 *Note: This Model may be inaccurate for collector currents above 0.6A. * *$ * FZT696B*ZETEX FZT696B Spice Model v2.0 Last Revised 25/1/05 * .MODEL FZT696B NPN IS =.98476E-12 NF =.999 BF =705 IKF=0.8 VAF=235 +ISE=8.1E-14 NE =1.36 NR =1.002 BR =20 IKR=.8 VAR=26 ISC=.66E-12 +NC =1.15 RB =.07 RE =.125 RC =.098 CJC=25.4E-12 MJC=.47 VJC=.445 +CJE=270E-12 TF =1.301E-9 TR =690E-9 XTB=1.4 +QUASIMOD=1 RCO=24 GAMMA=75E-8 * *$ * FZT705*ZETEX FZT705 Spice Model v1.0 Last Revised 9/8/90 * .SUBCKT FZT705 1 2 3 * C B E Q1 1 2 4 SUB704 Q2 1 4 3 SUB704 4 * .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817 +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595 .ENDS FZT705 * *$ * FZT7053* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JAN2011 *VERSION=1 *PINS C B E * .SUBCKT FZT7053 1 2 3 Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 .ENDS *$ FZT717*ZETEX FZT717 Spice Model v1.0 Last Revised 25/11/02 * .MODEL FZT717 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * FZT749*ZETEX FZT749 Spice Model v1.0 Last Revised 17/7/90 * .MODEL FZT749 PNP IS =2.6E-13 BF =210 VAF=27 IKF=7 ISE=1.2E-13 NE =1.43 BR =70 +VAR=14 IKR=.6 ISC=12.04E-13 NC =1.4474 NF =.999 NR =.982 RB =.3 RE =.065 +RC =.04 CJE=410E-12 TF =.65E-9 CJC=140E-12 TR =12E-9 MJC=.35 VJC=.305 * *$ * FZT751*ZETEX FZT751 Spice Model v1.0 Last Revised 23/1/91 * .MODEL FZT751 PNP IS =2.715E-13 BF =170 VAF=70 NF =1.004 IKF=2.75 ISE=1E-13 +NE =1.535 BR =23 VAR=40 NR =1.005 IKR=.55 ISC=5.15E-14 NC =1.13 RB =.07 +RE =.065 RC =.085 CJE=360E-12 TF =.94E-9 CJC=90E-12 TR =60E-9 VJC=.705 +MJC=.46 * *$ * FZT753*ZETEX FZT753 Spice Model v1.0 Last Revised 18/3/97 * .MODEL FZT753 PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76 + ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 + ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 + CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 + TF =0.86E-9 TR =24E-9 * *$ * FZT755*ZETEX FZT755 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT755 PNP IS =3.2E-13 NF =1.0041 BF =150 IKF=1.6 VAF=85 +RCO=5 GAMMA=5E-9 ISE=8E-14 NE =1.57 NR =1.0008 BR =20 IKR=0.45 VAR=51 +ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 CJC=65E-12 MJC=0.4896 +VJC=0.7676 CJE=350E-12 TF =1.5E-9 TR =3E-7 XTB=1.4 QUASIMOD=1 *$ * FZT757*ZETEX FZT757 Spice Model v3.0 Last Revised 24/2/05 * .MODEL FZT757 PNP IS =1.305E-13 NF =1.0004 BF =120 IKF=.5 VAF=1060 +ISE=7.5E-13 NE =1.5 RCO=15 GAMMA=5E-8 NR =1 ISC=2E-13 NC =1.8 +VAR=50 BR =3.2 IKR=.5 RB =.1 RE =.19 RC =.2 CJC=48E-12 MJC=.56 +VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6 +TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1 * *$ * FZT758*ZETEX FZT758 Spice Model v2.0 Last Revised 14/6/04 * .MODEL FZT758 PNP IS =1.305E-13 NF =1.0004 BF =150 VAF=350 +ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1 +ISC=2E-13 NC =1.8 VAR=30 BR =2.5 RB =.1 RE =.01 RC =.01 +CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12 TF =1E-9 TR =1200E-9 +XTB=1.7 * *$ * FZT788B*ZETEX FZT788B Spice Model v1.0 Last Revised 2/1/92 * .MODEL FZT788B PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11 +ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5 +ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12 +MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9 * *$ * FZT789A*ZETEX FZT789A Spice Model v1.0 Last Revised 3/1/92 * .MODEL FZT789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5 +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14 +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26 +CJE=300E-12 TF=0.73E-9 TR=4.2E-9 * *$ * FZT790A*ZETEX FZT790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL FZT790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * FZT792A*ZETEX FZT792A Spice Model v1.0 Last Revised 7/1/92 * .MODEL FZT792A PNP IS=5.98255E-13 NF=1.0022 BF=525 IKF=1.25 VAF=30 +ISE=1.45E-13 NE=1.54 NR=0.995 BR=75 IKR=0.4 VAR=34 ISC=1.58913E-13 +NC=1.03943 RB=0.06 RE=0.059 RC=0.08 CJC=90E-12 MJC=0.5 VJC=0.71 +CJE=286E-12 TF=0.75E-9 TR=93.75E-9 *Note, The Model may be inaccurate for collector currents above 1.2A. * *$ * FZT795A*ZETEX FZT795A Spice Model v1.0 Last revision 16/09/05 * .MODEL FZT795A PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14 +NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 +TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +RCO=4.3 GAMMA=0.5E-7 * *$ * FZT796A*ZETEX FZT796A Spice Model v2.0 Last Revised 24/1/05 * .MODEL FZT796A PNP IS=7E-13 NF=1.005 BF=450 IKF=2 VAF=450 ISE=1E-14 +NE=1.4 NR=1 BR=6.5 VAR=48 ISC=4.1E-13 IKR=0.4 NC=1.07 RB=0.05 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 TF=0.83E-9 +TR=130E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=13 GAMMA=2E-7 * *$ * FZT849*ZETEX FZT849 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT849 NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ * FZT851*ZETEX FZT851 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT851 NPN IS =1.0085E-12 NF =1.0001 BF =240 IKF=5.1 VAF=158 + ISE=2E-13 NE =1.38 NR =0.9988 BR =110 IKR=5.5 VAR=46 + ISC=4.6515E-13 NC =1.334 RB =0.025 RE =0.018 RC =0.015 + CJC=155E-12 MJC=0.4348 VJC=0.6477 CJE=1.05E-9 + TF =0.79E-9 TR =24E-9 * *$ * FZT853*ZETEX FZT853 Spice Model v1.0 Last Revised 4/12/2001 * .MODEL FZT853 NPN IS =8E-13 NF =0.99 BF =240 IKF=1.4 VAF=200 +ISE=4E-13 NE =1.27 NR =0.99 BR =90 IKR=1.4 VAR=46 ISC=100E-12 +NC =1.65 CJC=127E-12 MJC=0.46 VJC=.65 CJE=1.07E-9 RB=.3 RC=.014 +RE=.014 TF =0.9E-9 TR =20e-9 * *$ * FZT855*ZETEX FZT855 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT855 NPN IS =7.5E-13 BF =240 NF=0.995 VAF=350 ISE=4E-13 +NE=1.42 GAMMA=8E-8 RCO=2 XTB=1.4 BR=27 NR=1.0015 VAR=140 ISC=8E-12 +NC=1.3 RB=0.15 RE=0.018 RC=0.018 CJE=4.2E-10 CJC=6.6E-11 VJC=0.48 +MJC=0.41 TF =1.5E-9 TR=18E-8 QUASIMOD=1 * *$ * FZT857*ZETEX FZT857 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL FZT857 NPN IS=2E-12 NF=1.006 BF=226 IKF=5 VAF=595 ISE=3.6E-13 +NE=1.4088 NR=1.01 BR=40 IKR=94m VAR=33.5 ISC=1.502E-12 NC=1.067 +RB=.02 RE=.055 RC=.02 CJC=63E-12 MJC=.505 VJC=.491 CJE=1.1E-9 +TF=1.3E-9 TR=1.75E-6 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +VO=10 RCO=2.5 GAMMA=6E-8 * *$ * FZT869*ZETEX FZT869 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT869 NPN IS =1.9E-12 BF =600 IKF=9 VAF=40 + ISE=3.752E-13 NE =1.399 NR =1 BR =370 IKR=6 + VAR=18 ISC=4.135E-13 NC =1.384 RB =1 RBM =0.01 + IRB =1 RE = 0.01 RC =0.02 CJC=215E-12 MJC=0.3917 + VJC=0.5871 CJE=910.3E-12 MJE=0.3826 VJE=0.7686 + TF =1.15E-9 TR =4.01E-9 * *$ * FZT948*ZETEX FZT948 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT948 PNP IS=1.5554E-12 NF=1.013 BF=208 IKF=14.7 VAF=22.4 +ISE=1.48E-13 NE=1.485 NR=1.004 BR=140 IKR=1.34 VAR=15.4 +ISC=1.3946E-11 NC=1.702 RB=0.020 RE=0.0177 RC=0.015 CJC=440E-12 +MJC=0.3604 VJC=0.685 CJE=1.23E-9 TF=1.38E-9 TR=4.8E-9 * *$ * FZT949*ZETEX FZT949 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT949 PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7 +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12 +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9 * *$ * FZT951*ZETEX FZT951 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT951 PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3 +ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12 +NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 +VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9 * *$ * FZT953*ZETEX FZT953 Spice Model v1.1 Last Revised 24/4/03 * .MODEL FZT953 PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55 +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12 +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286 +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * FZT955*ZETEX FZT955 Spice Model v2.0 Last Revised 24/2/05 * .MODEL FZT955 PNP IS =6E-13 BF =150 NF=1 VAF=40 ISE=4E-13 +NE=1.42 GAMMA=1E-8 RCO=1 XTB=1.4 BR=21 NR=1.0015 VAR=19 ISC=8E-12 +NC=1.3 RB=0.15 RE=0.023 RC=0.018 CJE=1190E-12 VJE=0.92 MJE=0.44 +CJC=216E-12 VJC=0.87 MJC=0.54 TF =9E-10 TR=11E-8 QUASIMOD=1 * *$ * FZT956*ZETEX FZT956 Spice Model v3.0 Last Revised 24/2/05 * .MODEL FZT956 PNP IS =3E-12 BF =215 NF=1 VAF=86 IKF=2 ISE=6.5E-13 +NE=1.58 GAMMA=1E-8 RCO=1.4 XTB=1.4 BR=18 NR=1 VAR=59 ISC=6E-12 +NC=1.6 RB=0.05 RE=0.02 RC=0.01 CJC=191E-12 MJC=0.5535 VJC=0.8577 +CJE=1.08E-9 TF=0.895E-9 TR=118E-9 QUASIMOD=1 * *$ * FZT957*ZETEX FZT957 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL FZT957 PNP IS=1.3152E-12 NF=1.0106 BF=215 IKF=4 VAF=325 +ISE=5.5E-13 NE=1.524 NR=1.0104 BR=8 IKR=0.63 VAR=110 ISC=6E-12 +NC=1.8 RB=0.25 RE=0.07 RC=0.07 CJC=140E-12 MJC=0.5432 VJC=0.7592 +CJE=1.1E-9 TF=1.23E-9 TR=560E-9 XTB=1.4 TRB1=.005 TRE1=.005 +QUASIMOD=1 VO=10 RCO=6.5 GAMMA=0.8E-7 * *$ * FZT968*ZETEX FZT968 Spice Model v1.0 Last Revised 14/3/97 * .MODEL FZT968 PNP IS=3.58E-12 NF=1.015 BF=500 IKF=11 VAF=11.4 +ISE=1.576E-13 NE=1.42 NR=1.01 BR=245 IKR=1.4 VAR=8.4 ISC=1.48E-11 +NC=1.637 RB=0.024 RE=0.0164 RC=0.0235 CJC=438E-12 MJC=0.361 +VJC=0.673 CJE=1.05E-9 TF=1.38E-9 TR=2.3E-9 * *$ * FZTA14*ZETEX FZTA14 Spice Model v1.0 Last revision 25/11/2005 * .SUBCKT FZTA14 1 2 3 * C B E Q1 1 2 4 SUB38C Q2 1 4 3 SUB38C 12.75 * .MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758 +BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150 +CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9 .ENDS FZTA14 * *$ * FZTA42* .MODEL FZTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3 +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7 +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 +RB =7 RE =0.07 RC =0.07 QUASIMOD=1 +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 +TF =1.1E-9 TR =0.9e-6 XTB=1.4 * *$ GBJ15005*SRC=GBJ15005;DI_GBJ15005;Diodes;Si; 50.0V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ15005 D ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) GBJ1501*SRC=GBJ1501;DI_GBJ1501;Diodes;Si; 100V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1501 D ( IS=5.11u RS=3.43m BV=100 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) GBJ1502*SRC=GBJ1502;DI_GBJ1502;Diodes;Si; 200V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1502 D ( IS=5.11u RS=3.43m BV=200 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) GBJ1504*SRC=GBJ1504;DI_GBJ1504;Diodes;Si; 400V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1504 D ( IS=5.11u RS=3.43m BV=400 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) GBJ1506*SRC=GBJ1506;DI_GBJ1506;Diodes;Si; 600V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1506 D ( IS=5.11u RS=3.43m BV=600 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) GBJ1508*SRC=GBJ1508;DI_GBJ1508;Diodes;Si; 800V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1508 D ( IS=5.11u RS=3.43m BV=800 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) GBJ1510*SRC=GBJ1510;DI_GBJ1510;Diodes;Si; 1.00kV 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1510 D ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) GBJ20005*SRC=GBJ20005;DI_GBJ20005;Diodes;Si; 50.0V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ20005 D ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) GBJ2001*SRC=GBJ2001;DI_GBJ2001;Diodes;Si; 100V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2001 D ( IS=15.1u RS=2.96m BV=100 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) GBJ2002*SRC=GBJ2002;DI_GBJ2002;Diodes;Si; 200V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2002 D ( IS=15.1u RS=2.96m BV=200 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) GBJ2004*SRC=GBJ2004;DI_GBJ2004;Diodes;Si; 400V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2004 D ( IS=15.1u RS=2.96m BV=400 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) GBJ2006*SRC=GBJ2006;DI_GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2006 D ( IS=15.1u RS=2.96m BV=600 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) GBJ2008*SRC=GBJ2008;DI_GBJ2008;Diodes;Si; 800V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2008 D ( IS=15.1u RS=2.96m BV=800 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) GBJ2010*SRC=GBJ2010;DI_GBJ2010;Diodes;Si; 1.00kV 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2010 D ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) GBJ2510*SRC=GBJ2510;DI_GBJ2510;Diodes;Si; 1.00kV 25.0A 3.00us Diodes Inc. Bridge Rectifier--Per Element .MODEL DI_GBJ2510 D ( IS=379n RS=2.84m BV=1.00k IBV=10.0u + CJO=146p M=0.333 N=2.07 TT=4.32u ) GBU1002*SRC=GBU1002;DI_GBU1002;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1002 D ( IS=1.71f RS=7.00m BV=200 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) GBU4005*SRC=GBU4005;DI_GBU4005;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU4005 D ( IS=23.3n RS=7.20m BV=50.0 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) GBU401*SRC=GBU401;DI_GBU401;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU401 D ( IS=23.3n RS=7.20m BV=100 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) GBU402*SRC=GBU402;DI_GBU402;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU402 D ( IS=23.3n RS=7.20m BV=200 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) GBU404*SRC=GBU404;DI_GBU404;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU404 D ( IS=23.3n RS=7.20m BV=400 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) GBU406*SRC=GBU406;DI_GBU406;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU406 D ( IS=23.3n RS=7.20m BV=600 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) GBU408*SRC=GBU408;DI_GBU408;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU408 D ( IS=23.3n RS=7.20m BV=800 IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) GBU410*SRC=GBU410;DI_GBU410;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU410 D ( IS=23.3n RS=7.20m BV=1.00k IBV=5.00u + CJO=148p M=0.333 N=1.80 TT=4.32u ) GBU8005*SRC=GBU8005;DI_GBU8005;Diodes;Si; 50.0V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU8005 D ( IS=17.8p RS=7.59m BV=50.0 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) GBU801*SRC=GBU801;DI_GBU801;Diodes;Si; 100V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU801 D ( IS=17.8p RS=7.59m BV=100 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) GBU802*SRC=GBU802;DI_GBU802;Diodes;Si; 200V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU802 D ( IS=17.8p RS=7.59m BV=200 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) GBU804*SRC=GBU804;DI_GBU804;Diodes;Si; 400V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU804 D ( IS=17.8p RS=7.59m BV=400 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) GBU806*SRC=GBU806;DI_GBU806;Diodes;Si; 600V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU806 D ( IS=17.8p RS=7.59m BV=600 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) GBU808*SRC=GBU808;DI_GBU808;Diodes;Si; 800V 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU808 D ( IS=17.8p RS=7.59m BV=800 IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) GBU810*SRC=GBU810;DI_GBU810;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_GBU810 D ( IS=17.8p RS=7.59m BV=1.00k IBV=5.00u + CJO=240p M=0.333 N=1.25 TT=4.32u ) GDZ3V9LP3*TITLE=GDZ3V9LP3 *DATE=21/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 ** Imported from: C:UserssuppuluriDesktopGDZ3V9LP3.txt .model GDZ3V9LP3 D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n + BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL GDZ5V1LP3*TITLE=GDZ5V1LP3 *DATE=21/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model GDZ5V1LP3 D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n + BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL HD01*SRC=HD01;DI_HD01;Diodes;Si; 100V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD01 D ( IS=3.47n RS=42.6m BV=100 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) HD02*SRC=HD02;DI_HD02;Diodes;Si; 200V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD02 D ( IS=3.47n RS=42.6m BV=200 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) HD04*SRC=HD04;DI_HD04;Diodes;Si; 400V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD04 D ( IS=3.47n RS=42.6m BV=400 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) HD06*SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD06 D ( IS=3.47n RS=42.6m BV=600 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) IMT17*SRC=IMT17;DI_IMT17;BJTs PNP; Si; 50.0V 0.500A 240MHz .MODEL DI_IMT17 PNP (IS=3.85f NF=1.00 BF=289 VAF=127 + IKF=0.592 ISE=6.90f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.900 RE=0.150 RB=0.600 RC=60.0m + XTB=1.5 CJE=79.9p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=606p TR=103n EG=1.12 ) IMX8*SRC=IMX8;DI_IMX8;BJTs NPN; Si; 120V 50.0mA 300MHz Diodes Inc. Transistor .MODEL DI_IMX8 NPN (IS=14.6f NF=1.00 BF=581 VAF=197 + IKF=30.4m ISE=2.54p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=75.0m RE=0.830 RB=3.32 RC=0.332 + XTB=1.5 CJE=12.5p VJE=1.10 MJE=0.500 CJC=4.02p VJC=0.300 + MJC=0.300 TF=475p TR=80.1n EG=1.12 ) KBJ4005G*SRC=KBJ4005G;DI_KBJ4005G;Diodes;Si; 50.0V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ4005G D ( IS=656n RS=10.5m BV=50.0 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) KBJ401G*SRC=KBJ401G;DI_KBJ401G;Diodes;Si; 100V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ401G D ( IS=656n RS=10.5m BV=100 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) KBJ402G*SRC=KBJ402G;DI_KBJ402G;Diodes;Si; 200V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ402G D ( IS=656n RS=10.5m BV=200 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) KBJ404G*SRC=KBJ404G;DI_KBJ404G;Diodes;Si; 400V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ404G D ( IS=656n RS=10.5m BV=400 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) KBJ406G*SRC=KBJ406G;DI_KBJ406G;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ406G D ( IS=656n RS=10.5m BV=600 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) KBJ408G*SRC=KBJ408G;DI_KBJ408G;Diodes;Si; 800V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ408G D ( IS=656n RS=10.5m BV=800 IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) KBJ410G*SRC=KBJ410G;DI_KBJ410G;Diodes;Si; 1.00kV 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ410G D ( IS=656n RS=10.5m BV=1.00k IBV=10.0u + CJO=79.6p M=0.333 N=2.45 TT=4.32u ) KBP005G*SRC=KBP005G;DI_KBP005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP005G D ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) KBP01G*SRC=KBP01G;DI_KBP01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP01G D ( IS=39.2u RS=28.1m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) KBP02G*SRC=KBP02G;DI_KBP02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP02G D ( IS=39.2u RS=28.1m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) KBP04G*SRC=KBP04G;DI_KBP04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP04G D ( IS=39.2u RS=28.1m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) KBP06G*SRC=KBP06G;DI_KBP06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP06G D ( IS=39.2u RS=28.1m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) KBP08G*SRC=KBP08G;DI_KBP08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP08G D ( IS=39.2u RS=28.1m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) KBP10G*SRC=KBP10G;DI_KBP10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP10G D ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) KBP2005G*SRC=KBP2005G;DI_KBP2005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP2005G D ( IS=143n RS=21.1m BV=50.0 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) KBP201G*SRC=KBP201G;DI_KBP201G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP201G D ( IS=143n RS=21.1m BV=100 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) KBP202G*SRC=KBP202G;DI_KBP202G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP202G D ( IS=143n RS=21.1m BV=200 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) KBP204G*SRC=KBP204G;DI_KBP204G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP204G D ( IS=143n RS=21.1m BV=400 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) KBP206G*SRC=KBP206G;DI_KBP206G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP206G D ( IS=143n RS=21.1m BV=600 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) KBP208G*SRC=KBP208G;DI_KBP208G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP208G D ( IS=143n RS=21.1m BV=800 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) KBP210G*SRC=KBP210G;DI_KBP210G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP210G D ( IS=143n RS=21.1m BV=1.00k IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) LBN150B01***************************************************************************************************************************************** *SRC=LBN150B01;DI_LBN150B01_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary .MODEL DI_LBN150B01_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 + MJC=0.300 TF=450p TR=70.2n EG=1.12 ) *SRC=LBN150B01;DI_LBN150B01_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary .MODEL DI_LBN150B01_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 + MJC=0.300 TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** LMN200B01******************************************************************************************************************************* *SRC=LMN200B01;DI_LMN200B01_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_LMN200B01P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ---------------------------------------------------------- LMN200B02******************************************************************************************************************************* *SRC=LMN200B02;DI_LMN200B02_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_LMN200B02_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ---------------------------------------------------------- MBR1030*SRC=MBR1030;DI_MBR1030;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1030 D ( IS=2.62m RS=4.20m BV=30.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) MBR1030CT*SRC=MBR1030CT;DI_MBR1030CT;Diodes;Si; 30.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1030CT D ( IS=4.25u RS=13.0m BV=30.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) MBR1035*SRC=MBR1035;DI_MBR1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1035 D ( IS=2.62m RS=4.20m BV=35.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) MBR1040*SRC=MBR1040;DI_MBR1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1040 D ( IS=2.62m RS=4.20m BV=40.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) MBR1040CT*SRC=MBR1040CT;DI_MBR1040CT;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1040CT D ( IS=4.25u RS=13.0m BV=40.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) MBR1045*SRC=MBR1045;DI_MBR1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1045 D ( IS=2.62m RS=4.20m BV=45.0 IBV=100u + CJO=796p M=0.333 N=2.12 TT=7.20n ) MBR1045CT*SRC=MBR1045CT;DI_MBR1045CT;Diodes;Si; 45.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1045CT D ( IS=4.25u RS=13.0m BV=45.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) MBR1050*SRC=MBR1050;DI_MBR1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1050 D ( IS=153u RS=3.17m BV=50.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) MBR1050CT*SRC=MBR1050CT;DI_MBR1050CT;Diodes;Si; 50.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1050CT D ( IS=7.24u RS=14.5m BV=50.0 IBV=100u + CJO=318p M=0.333 N=1.29 TT=14.4n ) MBR1060*SRC=MBR1060;DI_MBR1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_MBR1060 D ( IS=153u RS=3.17m BV=60.0 IBV=100u + CJO=796p M=0.333 N=1.96 TT=7.20n ) MBR1060CT*SRC=MBR1060CT;DI_MBR1060CT;Diodes;Si; 60.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1060CT D ( IS=7.24u RS=14.5m BV=60.0 IBV=100u + CJO=318p M=0.333 N=1.29 TT=14.4n ) MBR1530CT*SRC=MBR1530CT;DI_MBR1530CT;Diodes;Si; 30.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1530CT D ( IS=344u RS=2.81m BV=30.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) MBR1535CT*SRC=MBR1535CT;DI_MBR1535CT;Diodes;Si; 35.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1535CT D ( IS=344u RS=2.81m BV=35.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) MBR1540CT*SRC=MBR1540CT;DI_MBR1540CT;Diodes;Si; 40.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1540CT D ( IS=344u RS=2.81m BV=40.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) MBR1545CT*SRC=MBR1545CT;DI_MBR1545CT;Diodes;Si; 45.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1545CT D ( IS=344u RS=2.81m BV=45.0 IBV=25.0u + CJO=530p M=0.333 N=2.28 TT=7.20n ) MBR1550CT*SRC=MBR1550CT;DI_MBR1550CT;Diodes;Si; 50.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1550CT D ( IS=11.3u RS=2.64m BV=50.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) MBR1560CT*SRC=MBR1560CT;DI_MBR1560CT;Diodes;Si; 60.0V 15.0A 5.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR1560CT D ( IS=11.3u RS=2.64m BV=60.0 IBV=25.0u + CJO=530p M=0.333 N=1.87 TT=7.20n ) MBR1635*SRC=MBR1635;DI_MBR1635;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_MBR1635 D ( IS=138u RS=2.62m BV=35.0 IBV=31.0u + CJO=862p M=0.333 N=1.53 TT=7.20n ) MBR1640*SRC=MBR1640;DI_MBR1640;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_MBR1640 D ( IS=138u RS=2.62m BV=40.0 IBV=31.0u + CJO=862p M=0.333 N=1.53 TT=7.20n ) MBR2030CT*SRC=MBR2030CT;DI_MBR2030CT;Diodes;Si; 30.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2030CT D ( IS=99.0u RS=2.10m BV=30.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) MBR2035CT*SRC=MBR2035CT;DI_MBR2035CT;Diodes;Si; 35.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2035CT D ( IS=98.9u RS=2.11m BV=35.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) MBR2040CT*SRC=MBR2040CT;DI_MBR2040CT;Diodes;Si; 40.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2040CT D ( IS=98.9u RS=2.11m BV=40.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) MBR2045CT*SRC=MBR2045CT;DI_MBR2045CT;Diodes;Si; 45.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2045CT D ( IS=98.9u RS=2.11m BV=45.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) MBR2050CT*SRC=MBR2050CT;DI_MBR2050CT;Diodes;Si; 50.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2050CT D ( IS=16.0u RS=2.11m BV=50.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) MBR2060CT*SRC=MBR2060CT;DI_MBR2060CT;Diodes;Si; 60.0V 20.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2060CT D ( IS=16.0u RS=2.11m BV=60.0 IBV=60.0u + CJO=994p M=0.333 N=1.70 TT=1.44n ) MBR2535CT*SRC=MBR2535CT;DI_MBR2535CT;Diodes;Si; 35.0V 30.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2535CT D ( IS=533u RS=1.41m BV=35.0 IBV=50.0u + CJO=1.34n M=0.333 N=1.95 TT=1.44n ) MBR2545CT*SRC=MBR2545CT;DI_MBR2545CT;Diodes;Si; 45.0V 30.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2545CT D ( IS=533u RS=1.41m BV=45.0 IBV=50.0u + CJO=1.34n M=0.333 N=1.95 TT=1.44n ) MBR2550CT*SRC=MBR2550CT;DI_MBR2550CT;Diodes;Si; 50.0V 30.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2550CT D ( IS=1.16m RS=1.41m BV=50.0 IBV=50.0u + CJO=1.34k M=0.333 N=2.53 TT=1.44n ) MBR2560CT*SRC=MBR2560CT;DI_MBR2560CT;Diodes;Si; 60.0V 30.0A 1.00ns Diodes Inc. Schottky - One element of device .MODEL DI_MBR2560CT D ( IS=1.16m RS=1.41m BV=60.0 IBV=50.0u + CJO=1.34k M=0.333 N=2.53 TT=1.44n ) MBRB1530CT*SRC=MBRB1530CT;DI_MBRB1530CT;Diodes;Si; 30.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1530CT D ( IS=71.5u RS=2.81m BV=30.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) MBRB1535CT*SRC=MBRB1535CT;DI_MBRB1535CT;Diodes;Si; 35.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1535CT D ( IS=71.5u RS=2.81m BV=35.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) MBRB1540CT*SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) MBRB1545CT*SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) MJD31C* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 * .MODEL MJD31C NPN IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13 + NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534 + VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9 * *$ MJD32C* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 * .MODEL MJD32C PNP IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76 + ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14 + NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896 + VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9 * *$ MJD340* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 * .MODEL MJD340 NPN IS=2.3E-13 NF=1.003 BF=150 IKF=1.35 + VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE 1.33 NR=1.001 + BR=8 VAR=43 ISC=1.8E-13 NC=1.19 RC=0.085 RB 0.35 RE 0.2 + CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7 + XTB=1.4 QUASIMOD=1 * *$ MJD350* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=21JUL2010 *VERSION=1 * .MODEL MJD350 PNP IS=1.305E-13 NF=1.0004 BF=120 IKF=.5 VAF=1060 + ISE=7.5E-13 NE=1.5 RCO=15 GAMMA=5E-8 NR=1 ISC=2E-13 NC=1.8 + VAR=50 BR=3.2 IKR=.5 RB=.1 RE=.19 RC=.2 CJC=48E-12 MJC=.56 + VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6 + TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1 * *$ MMBD2004S*SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching .MODEL DI_MMBD2004S D ( IS=1.76u RS=0.187 BV=240 IBV=100n + CJO=6.63p M=0.333 N=1.70 TT=72.0n ) MMBD2004SW*SRC=MMBD2004SW;DI_MMBD2004SW;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching - one element of device .MODEL DI_MMBD2004SW D ( IS=1.76u RS=0.187 BV=240 IBV=100n + CJO=6.63p M=0.333 N=1.70 TT=72.0n ) MMBD3004A*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004A .MODEL DI_MMBD3004A D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m MMBD3004BRM*SRC=MMBD3004BRM;DI_MMBD3004BRM;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching - one element of MMBD3004BRM D1 1 = A 2 = C DI_MMBD3004BRM .MODEL DI_MMBD3004BRM D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m MMBD3004C*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004C .MODEL DI_MMBD3004C D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m MMBD3004S*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching D1 1 = A 2 = C DI_MMBD3004S .MODEL DI_MMBD3004S D + IS = 5.000n + N = 1.930 + BV = 300.0 + IBV = 100.0n + RS = 730.0m + CJO = 979.0f + M = 43.5m + TT = 72.0n + VJ = 390.5m MMBD4148*SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4148 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) MMBD4148PLM*SRC=MMBD4148PLM;MMBD4148PLM;Diodes;Si; 75.0V 0.300A 4.00ns DIODES Inc .MODEL MMBD4148PLM D ( IS=13.0u RS=0.140 BV=75.0 IBV=1.00u + CJO=2.00 M=0.333 N=4.97 TT=5.76n ) MMBD4148W*SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4148W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) MMBD4448*SRC=MMBD4448;DI_MMBD4448;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) MMBD4448H*SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448H D ( IS=300n RS=0.422 BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) MMBD4448HADW*SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HADW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) MMBD4448HAQW*SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HAQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) MMBD4448HCQW*SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HCQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) MMBD4448HSDW*SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HSDW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) MMBD4448HT********************************************************************************************************************************************** *SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching .MODEL DI_MMBD4448HT D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ******************************************************************************************************************************************** MMBD4448HTA********************************************************************************************************************************************** *SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTA D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** MMBD4448HTC********************************************************************************************************************************************** *SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTC D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** MMBD4448HTS********************************************************************************************************************************************** *SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - One node of two .MODEL DI_MMBD4448HTS D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) ********************************************************************************************************************************************** MMBD4448HTW*SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of three .MODEL DI_MMBD4448HTW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) MMBD4448HW*SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448HW D ( IS=77.0n RS=84.0m BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.37 TT=5.76n ) MMBD4448V*SRC=MMBD4448V;DI_MMBD4448V;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching - one element of device .MODEL DI_MMBD4448V D ( IS=4.77n RS=84.4m BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) MMBD4448W*SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) MMBD5004A*SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n MMBD5004BRM*SRC=MMBD5004BRM;MMBD5004BRM;Diodes;Si; 400V 1.25A 50.0ns DIODES Switching diodes .MODEL MMBD5004BRM D ( IS=128n RS=33.6m BV=400 IBV=5.00u + CJO=2.00p M=0.333 N=2.62 TT=72.0n ) MMBD5004C*SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n MMBD5004S*SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode D1 1 = A 2 = C DI_MMBD5004ACS .MODEL DI_MMBD5004ACS D + IS = 10n + N = 2.02 + BV = 400 + IBV = 1.00u + RS = 0.7 + CJO = 0.6p + VJ = 60m + M = 35m + FC = 0.5 + TT = 50n MMBD7000*SRC=MMBD7000;DI_MMBD7000;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc. .MODEL DI_MMBD7000 D ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u + CJO=2.00p M=0.333 N=2.03 TT=5.76u ) MMBD7000HC*SRC=MMBD7000HC;MMBD7000HC;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching Diode .MODEL MMBD7000HC D ( IS=412p RS=0.140 BV=100 IBV=3.00u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) MMBD7000HS*SRC=MMBD7000HS;MMBD7000HS;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching Diode .MODEL MMBD7000HS D ( IS=412p RS=0.140 BV=100 IBV=3.00u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) MMBD914*SRC=MMBD914;DI_MMBD914;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching .MODEL DI_MMBD914 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.60 TT=5.76n ) MMBF170*SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms Diodes Inc. MOSFET .MODEL DI_MMBF170 NMOS( LEVEL=1 VTO=2.10 KP=18.8m GAMMA=2.60 + PHI=.75 LAMBDA=1.04m RD=0.294 RS=0.294 + IS=250f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- MMBT2222A*SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=622p TR=124n EG=1.12 ) MMBT2222AT*SRC=MMBT2222AT;DI_MMBT2222AT;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMBT2222AT NPN (IS=60.4f NF=1.00 BF=301 VAF=114 + IKF=66.8m ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.165 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=491p TR=82.1n EG=1.12 ) MMBT2907A*SRC=MMBT2907A;DI_MMBT2907A;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2907A PNP (IS=60.7f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 + MJC=0.300 TF=758p TR=123n EG=1.12 ) MMBT2907AT*SRC=MMBT2907AT;DI_MMBT2907AT;BJTs PNP; Si; 60.0V 0.500A 300MHz Diodes Inc. BJTs .MODEL DI_MMBT2907AT PNP (IS=50.0f NF=1.00 BF=410 VAF=139 + IKF=0.182 ISE=16.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.343 RB=1.37 RC=0.137 + XTB=1.5 CJE=34.9p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=484p TR=29.9n EG=1.12 ) MMBT3904*SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) MMBT3904FA*DIODES_INC_SPICE_MODEL MMBT3904FA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=22Oct2013 *VERSION=2.0 .MODEL MMBT3904FA NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMBT3904LP*DIODES_INC_SPICE_MODEL MMBT3904LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=17Aug2012 *VERSION=1.0 .MODEL MMBT3904LP NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995 BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1 VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMBT3904T*SRC=MMBT3904T;DI_MMBT3904T;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMBT3904T NPN (IS=20.2f NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=4.25p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=8.92p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=383p TR=69.9n EG=1.12 ) MMBT3906*SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT3906 PNP (IS=20.3f NF=1.00 BF=192 VAF=114 + IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300 + MJC=0.300 TF=589p TR=98.4n EG=1.12 ) MMBT3906FA*DIODES_INC_SPICE_MODEL MMBT3906FA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_IM *DATE=10Jul2013 *VERSION=1.0 .MODEL MMBT3906FA PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMBT3906LP*DIODES_INC_SPICE_MODEL MMBT3906LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .MODEL MMBT3906LP PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMBT3906T*SRC=MMBT3906T;DI_MMBT3906T;BJTs PNP; Si; 40.0V 0.200A 257MHz Didoes Inc. BJTs .MODEL DI_MMBT3906T PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.13p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 MJC=0.300 + TF=571p TR=84.1n EG=1.12 ) MMBT4401*SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=UDZ5V6B;DI_UDZ5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode *SYM=HZEN .SUBCKT DI_UDZ5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.99 .MODEL DF D ( IS=14.7p RS=3.10 N=1.10 + CJO=32.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=1.28 N=0.828 ) MMBT4401T*SRC=MMBT4401T;DI_MMBT4401T;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMBT4401T NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 MJC=0.300 + TF=533p TR=84.1n EG=1.12 ) MMBT4403*SRC=MMBT4403;DI_MMBT4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. Transistor .MODEL DI_MMBT4403 PNP (IS=26.9f NF=1.00 BF=274 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.263 RB=1.05 RC=0.105 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=24.6p VJC=0.300 + MJC=0.300 TF=500p TR=82.4n EG=1.12 ) MMBT4403T***************************************************************************************************************************************** *SRC=MMBT4403T;DI_MMBT4403T;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_MMBT4403T PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** MMBT5401* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMBT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ MMBT5551* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMBT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ MMBT6427*SRC=MMBT6427;DI_MMBT6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMBT6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) MMBTA05*SRC=MMBTA05;DI_MMBTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMBTA05 NPN (IS=51.3f NF=1.00 BF=547 VAF=139 + IKF=0.146 ISE=11.1p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.223 RB=0.892 RC=89.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=631p TR=110n EG=1.12 ) MMBTA06*SRC=MMBTA06;DI_MMBTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. Transistor .MODEL DI_MMBTA06 NPN (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=576p TR=110n EG=1.12 ) MMBTA13*SRC=MMBTA13;DI_MMBTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=134 VAF=98.6 + IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=4.00 RB=16.0 RC=1.60 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.77n TR=617n ) .MODEL DSUB D( IS=360f N=1 RS=4.00 BV=30.0 + IBV=.001 CJO=13.9p TT=617n ) .ENDS MMBTA14*SRC=MMBTA14;DI_MMBTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMBTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) .MODEL DSUB D( IS=360f N=1 RS=0.333 BV=30.0 + IBV=.001 CJO=13.9p TT=614n ) MMBTA28*SRC=MMBTA28;DI_MMBTA28;BJTs NPN;Darlington;80.0V 0.500A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA28 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=134 VAF=161 + IKF=0.400 ISE=36.5p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.500 RB=2.00 RC=0.200 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=6.15n TR=1.01u ) .MODEL DSUB D( IS=600f N=1 RS=0.500 BV=80.0 + IBV=.001 CJO=13.9p TT=1.01u ) .ENDS MMBTA42*SRC=MMBTA42;DI_MMBTA42;BJTs NPN; Si; 300V 0.500A 219MHz Diodes Inc. NPN Transistor .MODEL DI_MMBTA42 NPN (IS=51.0f NF=1.00 BF=194 VAF=312 + IKF=0.182 ISE=34.9p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.450 RE=11.6 RB=46.3 RC=4.63 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=481p TR=115n EG=1.12 ) MMBTA55*SRC=MMBTA55;DI_MMBTA55;BJTs PNP; Si; 60.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA55 PNP (IS=50.8f NF=1.00 BF=479 VAF=139 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 + MJC=0.300 TF=660p TR=149n EG=1.12 ) MMBTA56*SRC=MMBTA56;DI_MMBTA56;BJTs PNP; Si; 80.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA56 PNP (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 + MJC=0.300 TF=660p TR=149n EG=1.12 ) MMBTA63*SRC=MMBTA63;DI_MMBTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) MMBTA64*SRC=MMBTA64;DI_MMBTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) MMBTA92*SRC=MMBTA92;DI_MMBTA92;BJTs PNP; Si; 300V 0.500A 60.0MHz Diodes Inc. Transistor .MODEL DI_MMBTA92 PNP (IS=177f NF=1.00 BF=239 VAF=312 + IKF=72.9m ISE=33.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.18n TR=415n EG=1.12 ) MMBTH24*SRC=MMBTH24;DI_MMBTH24;BJTs NPN; Si; 40.0V 50.0mA 1.00kMHz Diodes Inc. Transistor .MODEL DI_MMBTH24 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 + MJC=0.300 TF=130p TR=27.4n EG=1.12 ) MMBZ5221B*DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.65 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMBZ5221BS*SRC=MMBZ5221BS;DI_MMBZ5221BS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=340p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) MMBZ5221BT*SRC=MMBZ5221BT;DI_MMBZ5221BT;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5221BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=26.1 N=3.00 ) MMBZ5221BTS*SRC=MMBZ5221BTS;DI_MMBZ5221BTS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=340p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) MMBZ5221BW*SRC=MMBZ5221BW;DI_MMBZ5221BW;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5221BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=26.1 N=3.00 ) MMBZ5222B*SRC=MMBZ5222B;MMBZ5222B;Diodes;Zener <=10V; 2.50V 0.350W DIODES Zener *SYM=HZEN .SUBCKT MMBZ5222B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=57.7p RS=36.0 N=1.10 + CJO=255p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.5f RS=26.1 N=3.00 ) .ENDS MMBZ5223B*SRC=MMBZ5223B;DI_MMBZ5223B;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5223B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=26.1 N=3.00 ) .ENDS MMBZ5223BS*SRC=MMBZ5223BS;DI_MMBZ5223BS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=275p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) MMBZ5223BT*SRC=MMBZ5223BT;DI_MMBZ5223BT;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5223BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=26.1 N=3.00 ) MMBZ5223BTS*SRC=MMBZ5223BTS;DI_MMBZ5223BTS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=275p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) MMBZ5223BW*SRC=MMBZ5223BW;DI_MMBZ5223BW;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5223BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10f RS=26.1 N=3.00 ) MMBZ5225B*DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5225B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.3 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMBZ5225BS*SRC=MMBZ5225BS;DI_MMBZ5225BS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=240p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) MMBZ5225BT*SRC=MMBZ5225BT;DI_MMBZ5225BT;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5225BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.208 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=26.1 N=3.00 ) MMBZ5225BTS*SRC=MMBZ5225BTS;DI_MMBZ5225BTS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=240p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) MMBZ5225BW*SRC=MMBZ5225BW;DI_MMBZ5225BW;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5225BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=26.1 N=3.00 ) MMBZ5226B*DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5226B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMBZ5226BS*SRC=MMBZ5226BS;DI_MMBZ5226BS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=230p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=24.1 N=3.00 ) MMBZ5226BT*SRC=MMBZ5226BT;DI_MMBZ5226BT;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5226BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.541 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=24.1 N=3.00 ) MMBZ5226BTS*SRC=MMBZ5226BTS;DI_MMBZ5226BTS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=230p VJ=0.750 M=0.330 TT=50.1n ) MMBZ5226BW*SRC=MMBZ5226BW;DI_MMBZ5226BW;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5226BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99f RS=24.1 N=3.00 ) MMBZ5227B*DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5227B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.9 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL MMBZ5227BS*SRC=MMBZ5227BS;DI_MMBZ5227BS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=190p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) MMBZ5227BT*SRC=MMBZ5227BT;DI_MMBZ5227BT;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5227BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.914 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=20.1 N=3.00 ) MMBZ5227BTS*SRC=MMBZ5227BTS;DI_MMBZ5227BTS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=190p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) MMBZ5227BW*SRC=MMBZ5227BW;DI_MMBZ5227BW;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5227BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=20.1 N=3.00 ) MMBZ5228B*SRC=MMBZ5228B;DI_MMBZ5228B;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5228B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.29 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=19.1 N=3.00 ) .ENDS MMBZ5228BS*SRC=MMBZ5228BS;DI_MMBZ5228BS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=180p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) MMBZ5228BT*SRC=MMBZ5228BT;DI_MMBZ5228BT;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5228BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.23 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=19.1 N=3.00 ) MMBZ5228BTS*SRC=MMBZ5228BTS;DI_MMBZ5228BTS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=180p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) MMBZ5228BW*SRC=MMBZ5228BW;DI_MMBZ5228BW;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5228BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=19.1 N=3.00 ) MMBZ5229B*SRC=MMBZ5229B;DI_MMBZ5229B;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5229B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.71 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=18.1 N=3.00 ) .ENDS MMBZ5229BS*SRC=MMBZ5229BS;DI_MMBZ5229BS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=170p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) MMBZ5229BT*SRC=MMBZ5229BT;DI_MMBZ5229BT;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5229BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.64 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.87f RS=18.1 N=3.00 ) MMBZ5229BTS*SRC=MMBZ5229BTS;DI_MMBZ5229BTS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=170p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) MMBZ5229BW*SRC=MMBZ5229BW;DI_MMBZ5229BW;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5229BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83f RS=18.1 N=3.00 ) MMBZ5230B*SRC=MMBZ5230B;DI_MMBZ5230B;Diodes;Zener <=10V; 4.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5230B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.16 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=15.1 N=3.00 ) .ENDS MMBZ5230BS*SRC=MMBZ5230BS;DI_MMBZ5230BS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5230BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=160p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) MMBZ5230BT*SRC=MMBZ5230BT;DI_MMBZ5230BT;Diodes;Zener <=10V; 4.70V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5230BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.09 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.63f RS=15.1 N=3.00 ) MMBZ5230BTS*SRC=MMBZ5230BTS;DI_MMBZ5230BTS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5230BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=160p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) MMBZ5230BW*SRC=MMBZ5230BW;DI_MMBZ5230BW;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5230BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=15.1 N=3.00 ) MMBZ5231B*SRC=MMBZ5231B;DI_MMBZ5231B;Diodes;Zener <=10V; 5.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5231B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.59 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=13.1 N=3.00 ) .ENDS MMBZ5231BS*SRC=MMBZ5231BS;DI_MMBZ5231BS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5231BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) MMBZ5231BT*SRC=MMBZ5231BT;DI_MMBZ5231BT;Diodes;Zener <=10V; 5.10V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5231BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.53 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=13.1 N=3.00 ) MMBZ5231BTS*SRC=MMBZ5231BTS;DI_MMBZ5231BTS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5231BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) MMBZ5231BW*SRC=MMBZ5231BW;DI_MMBZ5231BW;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5231BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) MMBZ5232B*SRC=MMBZ5232B;DI_MMBZ5232B;Diodes;Zener <=10V; 5.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5232B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.21 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=7.11 N=3.00 ) .ENDS MMBZ5232BS*SRC=MMBZ5232BS;DI_MMBZ5232BS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5232BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) MMBZ5232BT*SRC=MMBZ5232BT;DI_MMBZ5232BT;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5232BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.21f RS=7.11 N=3.00 ) MMBZ5232BTS*SRC=MMBZ5232BTS;DI_MMBZ5232BTS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5232BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=130p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) MMBZ5232BW*SRC=MMBZ5232BW;DI_MMBZ5232BW;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5232BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) MMBZ5233B*SRC=MMBZ5233B;DI_MMBZ5233B;Diodes;Zener <=10V; 6.00V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5233B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.68 .MODEL DF D ( IS=24.0p RS=33.5 N=1.10 + CJO=51.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.81f RS=3.11 N=3.00 ) .ENDS MMBZ5233BS*SRC=MMBZ5233BS;DI_MMBZ5233BS;Diodes;Zener <=10V; 6.00V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5233BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.64 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=125p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.11 N=3.00 ) MMBZ5233BTS*SRC=MMBZ5233BTS;DI_MMBZ5233BTS;Diodes;Zener <=10V; 6.00V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5233BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.64 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=125p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=3.11 N=3.00 ) MMBZ5234B*SRC=MMBZ5234B;DI_MMBZ5234B;Diodes;Zener <=10V; 6.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5234B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.88 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=3.11 N=3.00 ) .ENDS MMBZ5234BS*SRC=MMBZ5234BS;DI_MMBZ5234BS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5234BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=120p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) MMBZ5234BT*SRC=MMBZ5234BT;DI_MMBZ5234BT;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5234BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.81 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.99f RS=3.11 N=3.00 ) MMBZ5234BTS*SRC=MMBZ5234BTS;DI_MMBZ5234BTS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5234BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=120p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) MMBZ5234BW*SRC=MMBZ5234BW;DI_MMBZ5234BW;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5234BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) MMBZ5235B*SRC=MMBZ5235B;DI_MMBZ5235B;Diodes;Zener <=10V; 6.80V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.53 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=1.15 N=2.97 ) .ENDS MMBZ5235BS*SRC=MMBZ5235BS;DI_MMBZ5235BS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5235BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=110p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) MMBZ5235BT*SRC=MMBZ5235BT;DI_MMBZ5235BT;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5235BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.47 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=1.15 N=2.97 ) MMBZ5235BTS*SRC=MMBZ5235BTS;DI_MMBZ5235BTS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5235BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=110p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) MMBZ5235BW*SRC=MMBZ5235BW;DI_MMBZ5235BW;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5235BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) MMBZ5236B*SRC=MMBZ5236B;DI_MMBZ5236B;Diodes;Zener <=10V; 7.50V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5236B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=2.12 N=3.00 ) .ENDS MMBZ5236BS*SRC=MMBZ5236BS;DI_MMBZ5236BS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5236BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=95.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) MMBZ5236BT*SRC=MMBZ5236BT;DI_MMBZ5236BT;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5236BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) MMBZ5236BTS*SRC=MMBZ5236BTS;DI_MMBZ5236BTS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5236BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=95.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) MMBZ5236BW*SRC=MMBZ5236BW;DI_MMBZ5236BW;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5236BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) MMBZ5237B*SRC=MMBZ5237B;DI_MMBZ5237B;Diodes;Zener <=10V; 8.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5237B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=4.11 N=3.00 ) .ENDS MMBZ5237BS*SRC=MMBZ5237BS;DI_MMBZ5237BS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5237BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=88.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) MMBZ5237BT*SRC=MMBZ5237BT;DI_MMBZ5237BT;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5237BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.77 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.51f RS=4.11 N=3.00 ) MMBZ5237BTS*SRC=MMBZ5237BTS;DI_MMBZ5237BTS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5237BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=88.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) MMBZ5237BW*SRC=MMBZ5237BW;DI_MMBZ5237BW;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5237BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) MMBZ5238B*SRC=MMBZ5238B;DI_MMBZ5238B;Diodes;Zener <=10V; 8.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5238B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.33 .MODEL DF D ( IS=16.6p RS=32.4 N=1.10 + CJO=29.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.31f RS=4.11 N=3.00 ) .ENDS MMBZ5238BS*SRC=MMBZ5238BS;DI_MMBZ5238BS;Diodes;Zener <=10V; 8.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5238BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.29 .MODEL DF D ( IS=9.47p RS=30.8 N=1.10 + CJO=83.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.89f RS=4.11 N=3.00 ) MMBZ5238BTS*SRC=MMBZ5238BTS;DI_MMBZ5238BTS;Diodes;Zener <=10V; 8.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5238BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.29 .MODEL DF D ( IS=9.47p RS=30.8 N=1.10 + CJO=83.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.89f RS=4.11 N=3.00 ) MMBZ5239B*SRC=MMBZ5239B;DI_MMBZ5239B;Diodes;Zener <=10V; 9.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5239B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.69 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.11 N=3.00 ) .ENDS MMBZ5239BS*SRC=MMBZ5239BS;DI_MMBZ5239BS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5239BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=80.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) MMBZ5239BT*SRC=MMBZ5239BT;DI_MMBZ5239BT;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5239BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.62 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.36f RS=6.11 N=3.00 ) MMBZ5239BTS*SRC=MMBZ5239BTS;DI_MMBZ5239BTS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5239BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=80.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) MMBZ5239BW*SRC=MMBZ5239BW;DI_MMBZ5239BW;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5239BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.64 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=6.11 N=3.00 ) MMBZ5240B*SRC=MMBZ5240B;DI_MMBZ5240B;Diodes;Zener <=10V; 10.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5240B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.44 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=13.1 N=3.00 ) .ENDS MMBZ5240BS*SRC=MMBZ5240BS;DI_MMBZ5240BS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5240BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=77.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) MMBZ5240BT*SRC=MMBZ5240BT;DI_MMBZ5240BT;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5240BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.37 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=13.1 N=3.00 ) MMBZ5240BTS*SRC=MMBZ5240BTS;DI_MMBZ5240BTS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5240BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=77.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) MMBZ5240BW*SRC=MMBZ5240BW;DI_MMBZ5240BW;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5240BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.40 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=13.1 N=3.00 ) MMBZ5241B*SRC=MMBZ5241B;DI_MMBZ5241B;Diodes;Zener 10V-50V; 11.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5241B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.33 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=18.1 N=3.00 ) .ENDS MMBZ5241BS*SRC=MMBZ5241BS;DI_MMBZ5241BS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5241BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=75.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) MMBZ5241BT*SRC=MMBZ5241BT;DI_MMBZ5241BT;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5241BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.27 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=18.1 N=3.00 ) MMBZ5241BTS*SRC=MMBZ5241BTS;DI_MMBZ5241BTS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5241BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=75.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) MMBZ5241BW*SRC=MMBZ5241BW;DI_MMBZ5241BW;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5241BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.29 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=18.1 N=3.00 ) MMBZ5242B*SRC=MMBZ524B;DI_MMBZ5242B;Diodes;Zener 10V-50V; 12.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5242B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.17 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=26.1 N=3.00 ) .ENDS MMBZ5242BS*SRC=MMBZ5242BS;DI_MMBZ5242BS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5242BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=74.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) MMBZ5242BT*SRC=MMBZ5242BT;DI_MMBZ5242BT;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5242BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.10 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) MMBZ5242BTS*SRC=MMBZ5242BTS;DI_MMBZ5242BTS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5242BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=74.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) MMBZ5242BW*SRC=MMBZ5242BW;DI_MMBZ5242BW;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5242BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=26.1 N=3.00 ) MMBZ5243B*SRC=MMBZ5243B;DI_MMBZ5243B;Diodes;Zener 10V-50V; 13.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5243B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=9.11 N=3.00 ) .ENDS MMBZ5243BS*SRC=MMBZ5243BS;DI_MMBZ5243BS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5243BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=66.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) MMBZ5243BT*SRC=MMBZ5243BT;DI_MMBZ5243BT;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5243BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.5 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.51e-016 RS=21.8 N=3.00 ) MMBZ5243BTS*SRC=MMBZ5243BTS;DI_MMBZ5243BTS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5243BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=66.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) MMBZ5243BW*SRC=MMBZ5243BW;DI_MMBZ5243BW;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5243BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=4.82 N=3.00 ) MMBZ5244B*SRC=MMBZ5244B;DI_MMBZ5244B;Diodes;Zener 10V-50V; 14.0V 0.350W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_MMBZ5244B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=10.3p RS=1.77 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=6.37 N=3.00 ) MMBZ5245B*SRC=MMBZ5245B;DI_MMBZ5245B;Diodes;Zener 10V-50V; 15.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5245B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=12.1 N=3.00 ) .ENDS MMBZ5245BS*SRC=MMBZ5245BS;DI_MMBZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5245BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=60.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) MMBZ5245BT*SRC=MMBZ5245BT;DI_MMBZ5245BT;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5245BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=28.1 N=3.00 ) MMBZ5245BTS*SRC=MMBZ5245BTS;DI_MMBZ5245BTS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5245BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=60.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) MMBZ5245BW*SRC=MMBZ5245BW;DI_MMBZ5245BW;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5245BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=6.86 N=3.00 ) MMBZ5246B*SRC=MMBZ5246B;DI_MMBZ5246B;Diodes;Zener 10V-50V; 16.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5246B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.4 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=13.1 N=3.00 ) .ENDS MMBZ5246BS*SRC=MMBZ5246BS;DI_MMBZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5246BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=58.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) MMBZ5246BT*SRC=MMBZ5246BT;DI_MMBZ5246BT;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5246BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.73e-016 RS=7.04 N=3.00 ) MMBZ5246BTS*SRC=MMBZ5246BTS;DI_MMBZ5246BTS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5246BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=58.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) MMBZ5246BW*SRC=MMBZ5246BW;DI_MMBZ5246BW;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5246BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=7.04 N=3.00 ) MMBZ5248B*SRC=MMBZ5248B;DI_MMBZ5248B;Diodes;Zener 10V-50V; 18.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5248B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.3 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=17.1 N=3.00 ) .ENDS MMBZ5248BS*SRC=MMBZ5248BS;DI_MMBZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5248BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=53.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) MMBZ5248BTSRC=MMBZ5248BT;DI_MMBZ5248BT;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5248BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=9.90 N=3.00 ) .ENDS MMBZ5248BTS*SRC=MMBZ5248BTS;DI_MMBZ5248BTS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5248BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=53.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) MMBZ5248BW*SRC=MMBZ5248BW;DI_MMBZ5248BW;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5248BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 ) MMBZ5250B*SRC=MMBZ5250B;DI_MMBZ5250B;Diodes;Zener 10V-50V; 20.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5250B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.2 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=21.1 N=3.00 ) .ENDS MMBZ5250BS*SRC=MMBZ5250BS;DI_MMBZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5250BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=50.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) MMBZ5250BT*SRC=MMBZ5250BT;DI_MMBZ5250BT;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5250BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.18e-016 RS=12.5 N=3.00 ) MMBZ5250BTS*SRC=MMBZ5250BTS;DI_MMBZ5250BTS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5250BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=50.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) MMBZ5250BW*SRC=MMBZ5250BW;DI_MMBZ5250BW;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5250BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 ) MMBZ5251B*SRC=MMBZ5251B;DI_MMBZ5251B;Diodes;Zener 10V-50V; 22.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5251B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.1 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=25.1 N=3.00 ) .ENDS MMBZ5251BS*SRC=MMBZ5251BS;DI_MMBZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5251BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=48.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) MMBZ5251BT*SRC=MMBZ5251BT;DI_MMBZ5251BT;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5251BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.62e-016 RS=15.1 N=3.00 ) MMBZ5251BTS*SRC=MMBZ5251BTS;DI_MMBZ5251BTS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5251BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=48.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) MMBZ5251BW*SRC=MMBZ5251BW;DI_MMBZ5251BW;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5251BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 ) MMBZ5252B*SRC=MMBZ5252B;DI_MMBZ5252B;Diodes;Zener 10V-50V; 24.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5252B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.1 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=29.1 N=3.00 ) .ENDS MMBZ5252BS*SRC=MMBZ5252BS;DI_MMBZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5252BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=45.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) MMBZ5252BT*SRC=MMBZ5252BT;DI_MMBZ5252BT;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5252BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15e-016 RS=18.1 N=3.00 ) MMBZ5252BTS*SRC=MMBZ5252BTS;DI_MMBZ5252BTS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5252BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=45.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) MMBZ5252BW*SRC=MMBZ5252BW;DI_MMBZ5252BW;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5252BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 ) MMBZ5254B*SRC=MMBZ5254B;DI_MMBZ5254B;Diodes;Zener 10V-50V; 27.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5254B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.9 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=37.1 N=3.00 ) .ENDS MMBZ5254BS*SRC=MMBZ5254BS;DI_MMBZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5254BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=42.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) MMBZ5254BT*SRC=MMBZ5254BT;DI_MMBZ5254BT;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5254BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=25.5 N=3.00 ) MMBZ5254BTS*SRC=MMBZ5254BTS;DI_MMBZ5254BTS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5254BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=42.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) MMBZ5254BW*SRC=MMBZ5254BW;DI_MMBZ5254BW;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5254BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 ) MMBZ5255B*SRC=MMBZ5255B;DI_MMBZ5255B;Diodes;Zener 10V-50V; 28.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5255B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.8 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=40.1 N=3.00 ) .ENDS MMBZ5255BS*SRC=MMBZ5255BS;DI_MMBZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5255BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=41.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) MMBZ5255BT*SRC=MMBZ5255BT;DI_MMBZ5255BT;Diodes;Zener 10V-50V; 28.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5255BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.21p RS=26.7 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41e-016 RS=26.7 N=3.00 ) MMBZ5255BTS*SRC=MMBZ5255BTS;DI_MMBZ5255BTS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5255BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=41.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) MMBZ5255BW*SRC=MMBZ5255BW;DI_MMBZ5255BW;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5255BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=26.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 ) MMBZ5256B*SRC=MMBZ5256B;DI_MMBZ5256B;Diodes;Zener 10V-50V; 30.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5256B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.7 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=45.1 N=3.00 ) .ENDS MMBZ5256BS*SRC=MMBZ5256BS;DI_MMBZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5256BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=40.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) MMBZ5256BT*SRC=MMBZ5256BT;DI_MMBZ5256BT;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5256BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12e-016 RS=30.5 N=3.00 ) MMBZ5256BTS*SRC=MMBZ5256BTS;DI_MMBZ5256BTS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5256BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=40.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) MMBZ5256BW*SRC=MMBZ5256BW;DI_MMBZ5256BW;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5256BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 ) MMBZ5257B*SRC=MMBZ5257B;DI_MMBZ5257B;Diodes;Zener 10V-50V; 33.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5257B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.5 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=54.1 N=3.00 ) .ENDS MMBZ5257BS*SRC=MMBZ5257BS;DI_MMBZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5257BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) MMBZ5257BT*SRC=MMBZ5257BT;DI_MMBZ5257BT;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5257BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.5 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75e-016 RS=37.6 N=3.00 ) MMBZ5257BTS*SRC=MMBZ5257BTS;DI_MMBZ5257BTS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5257BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) MMBZ5257BW*SRC=MMBZ5257BW;DI_MMBZ5257BW;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5257BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 ) MMBZ5258B*SRC=MMBZ5258B;DI_MMBZ5258B;Diodes;Zener 10V-50V; 36.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5258B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 32.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=66.1 N=3.00 ) .ENDS MMBZ5258BS*SRC=MMBZ5258BS;DI_MMBZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5258BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=38.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) MMBZ5258BT*SRC=MMBZ5258BT;DI_MMBZ5258BT;Diodes;Zener 10V-50V; 36.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5258BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=1.72p RS=25.9 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43e-016 RS=47.1 N=3.00 ) MMBZ5258BTS*SRC=MMBZ5258BTS;DI_MMBZ5258BTS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5258BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=38.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) MMBZ5258BW*SRC=MMBZ5258BW;DI_MMBZ5258BW;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5258BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 ) MMBZ5259B*SRC=MMBZ5259B;DI_MMBZ5259B;Diodes;Zener 10V-50V; 39.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5259B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 35.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=76.1 N=3.00 ) .ENDS MMBZ5259BS*SRC=MMBZ5259BS;DI_MMBZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5259BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=37.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) MMBZ5259BT*SRC=MMBZ5259BT;DI_MMBZ5259BT;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5259BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17e-016 RS=55.7 N=3.00 ) MMBZ5259BTS*SRC=MMBZ5259BTS;DI_MMBZ5259BTS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5259BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=37.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) MMBZ5259BW*SRC=MMBZ5259BW;DI_MMBZ5259BW;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5259BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 ) MMDT2222A*SRC=MMDT2222A;DI_MMDT2222A;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT2222A NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) MMDT2222V*SRC=MMDT2222V;DI_MMDT2222V;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Single element of dual .MODEL DI_MMDT2222V NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) MMDT2227***************************************************************************************************************************************** *SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** MMDT2227M*SRC=MMDT2227M;DI_MMDT2227M_NPN Element Only;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227M_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227M;DI_MMDT2227M_PNP Element Only;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227M_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) MMDT2907A***************************************************************************************************************************************** *SRC=MMDT2907A;DI_MMDT2907A;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT2907A PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** MMDT2907V*SRC=MMDT2907V;DI_MMDT2907V;BJTs PNP; Si; 60.0V 0.600A 148MHz Diodes Inc. Single element of dual BJTs .MODEL DI_MMDT2907V PNP (IS=59.8f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=25.8p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=1.56 RB=6.25 RC=0.625 + XTB=1.5 CJE=148p VJE=1.10 MJE=0.500 CJC=47.8p VJC=0.300 + MJC=0.300 TF=912p TR=166n EG=1.12 ) MMDT3904*SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) MMDT3904VC*SRC=MMDT3904VC;DI_MMDT3904VC;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMDT3904VC NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) MMDT3906*SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT3906 PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300 + TF=558p TR=84.1n EG=1.12 ) MMDT3906VC*SRC=MMDT3906VC;DI_MMDT3906VC;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_MMDT3906VC PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) MMDT3946***************************************************************************************************************************************** *SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 + MJC=0.300 TF=450p TR=70.2n EG=1.12 ) *SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 + MJC=0.300 TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** MMDT3946LP4*SRC=MMDT3946LP4;MMDT3946LP4_NPN;BJTs NPN; Si; 40.0V 0.200A 375MHz .MODEL MMDT3946LP4_NPN NPN (IS=7.48e-016 NF=1.00 BF=141 VAF=114 + IKF=0.118 ISE=6.24f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.180 RE=0.477 RB=1.91 RC=0.191 + XTB=1.5 CJE=11.1p VJE=1.10 MJE=0.500 CJC=4.97p VJC=0.300 + MJC=0.300 TF=401p TR=69.4n EG=1.12 ) *SRC=MMDT3946LP4;MMDT3946LP4_PNP;BJTs PNP; Si; 40.0V 0.200A 490MHz .MODEL MMDT3946LP4_PNP PNP (IS=5.58e-016 NF=1.00 BF=162 VAF=114 + IKF=98.0m ISE=4.72f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.865 RB=3.46 RC=0.346 + XTB=1.5 CJE=11.1p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 + MJC=0.300 TF=301p TR=52.4n EG=1.12 ) MMDT4401*SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4401 NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300 + TF=539p TR=84.1n EG=1.12 ) MMDT4403*SRC=MMDT4403;DI_MMDT4403;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4403 PNP (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=516p TR=84.1n EG=1.12 ) MMDT4413***************************************************************************************************************************************** *SRC=MMDT4413;DI_MMDT4413_NPN;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementaryl .MODEL DI_MMDT4413_NPN NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4413;DI_MMDT4413_PNP;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT4413_PNP PNP (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=516p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** MMDT5401* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT MMDT5401 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 .ENDS * *$ MMDT5451* *Diodes DMMT5451 Spice Model v1.0 Last Revised 17/02/09 * *.MODEL 5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ .MODEL 5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA MMDT5551* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT MMDT5551 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 .ENDS * *$ MMST2222A*SRC=MMST2222A;DI_MMST2222A;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMST2222A NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=15.0p VJC=0.300 MJC=0.300 + TF=496p TR=84.1n EG=1.12 ) MMST2907A*SRC=MMST2907A;DI_MMST2907A;BJTs PNP; Si; 60.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMST2907A PNP (IS=59.9f NF=1.00 BF=410 VAF=139 + IKF=0.273 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.344 RB=1.38 RC=0.138 + XTB=1.5 CJE=30.2p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=513p TR=29.9n EG=1.12 ) MMST3904*SRC=MMST3904;DI_MMST3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3904 NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=367p TR=70.2n EG=1.12 ) MMST3906*SRC=MMST3906;DI_MMST3906;BJTs PNP; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3906 PNP (IS=7.06e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.12p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=422p TR=84.1n EG=1.12 ) MMST4401*SRC=MMST4401;DI_MMST4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMST4401 NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) MMST4403*SRC=MMST4403;DI_MMST4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMST4403 PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.334 ISE=24.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.825 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=31.4p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=486p TR=81.1n EG=1.12 ) MMST5401* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMST5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ MMST5551* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 * .MODEL MMST5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ MMST6427*SRC=MMST6427;DI_MMST6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMST6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) MMSTA05*SRC=MMSTA05;DI_MMSTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMSTA05 NPN (IS=94.2f NF=1.00 BF=331 VAF=139 + IKF=0.146 ISE=24.9p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=633p TR=112n EG=1.12 ) MMSTA06*SRC=MMSTA06;DI_MMSTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMSTA06 NPN (IS=94.2f NF=1.00 BF=301 VAF=161 + IKF=0.146 ISE=27.4p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=633p TR=112n EG=1.12 ) MMSTA13*SRC=MMSTA13;DI_MMSTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=100 VAF=98.6 + IKF=0.240 ISE=29.4p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) MMSTA14*SRC=MMSTA14;DI_MMSTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) MMSTA42*SRC=MMSTA42;DI_MMSTA42;BJTs NPN; Si; 300V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMSTA42 NPN (IS=109f NF=1.00 BF=219 VAF=312 + IKF=0.425 ISE=69.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=1.05 RE=1.21 RB=4.86 RC=0.486 + XTB=1.5 CJE=32.9p VJE=1.10 MJE=0.500 CJC=10.6p VJC=0.300 + MJC=0.300 TF=441p TR=72.5n EG=1.12 ) MMSTA55*SRC=MMSTA55;DI_MMSTA55;BJTs PNP; Si; 60.0V 0.500A 70.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA55 PNP (IS=50.2f NF=1.00 BF=331 VAF=139 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.16n TR=350n EG=1.12 ) MMSTA56*SRC=MMSTA56;DI_MMSTA56;BJTs PNP; Si; 80.0V 0.500A 70.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA56 PNP (IS=50.2f NF=1.00 BF=331 VAF=161 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.16n TR=350n EG=1.12 ) MMSTA63*SRC=MMSTA63;DI_MMSTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT MMSTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) .ENDS MMSTA64*SRC=MMSTA64;DI_MMSTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMSTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) MMSTA92*SRC=MMSTA92;DI_MMSTA92;BJTs PNP; Si; 300V 0.100A 60.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA92 PNP (IS=53.7f NF=1.00 BF=164 VAF=312 + IKF=66.8m ISE=25.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.165 RE=0.565 RB=2.26 RC=0.226 + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300 + MJC=0.300 TF=2.46n TR=426n EG=1.12 ) MMSZ5221B*DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.65 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL MMSZ5221BS*SRC=MMSZ5221BS;DI_MMSZ5221BS;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5221BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=794p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=26.1 N=3.00 ) MMSZ5223B*DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5223B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMSZ5223BS*SRC=MMSZ5223BS;DI_MMSZ5223BS;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5223BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75m .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=463p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=26.1 N=3.00 ) MMSZ5225B*DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5225B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.3 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMSZ5225BS*SRC=MMSZ5225BS;DI_MMSZ5225BS;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5225BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.302 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=26.1 N=3.00 ) MMSZ5226B*DIODES_INC_SPICE_MODEL ZENER *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Apr2013 *VERSION=2 .SUBCKT MMSZ5226B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.6 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=30f RS=3.8 N=.9 ) .ENDS * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * MMSZ5226BS*SRC=MMSZ5226BS;DI_MMSZ5226BS;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5226BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.634 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=251p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=24.1 N=3.00 ) MMSZ5227BS*SRC=MMSZ5227BS;DI_MMSZ5227BS;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5227BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.01 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=238p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=20.1 N=3.00 ) MMSZ5228B*SRC=MMSZ5228B;DI_MMSZ5228B;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5228B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.32 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=19.1 N=3.00 ) MMSZ5228BS*SRC=MMSZ5228BS;DI_MMSZ5228BS;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5228BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.32 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=19.1 N=3.00 ) MMSZ5229B*SRC=MMSZ5229B;DI_MMSZ5229B;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5229B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.73 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=18.1 N=3.00 ) MMSZ5229BS*SRC=MMSZ5229BS;DI_MMSZ5229BS;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5229BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.73 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=18.1 N=3.00 ) MMSZ5230B*SRC=MMSZ5230B;DI_MMSZ5230B;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5230B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.19 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=139p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=15.1 N=3.00 ) MMSZ5230BS*SRC=MMSZ5230BS;DI_MMSZ5230BS;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5230BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.19 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=139p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=15.1 N=3.00 ) MMSZ5231B*SRC=MMSZ5231B;DI_MMSZ5231B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5231B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) MMSZ5231BS*SRC=MMSZ5231BS;DI_MMSZ5231BS;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5231BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) MMSZ5232B*SRC=MMSZ5232B;DI_MMSZ5232B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5232B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) MMSZ5232BS*SRC=MMSZ5232BS;DI_MMSZ5232BS;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5232BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) MMSZ5233B*SRC=MMSZ5233B;DI_MMSZ5233B;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5233B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.71 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=3.11 N=3.00 ) MMSZ5233BS*SRC=MMSZ5233BS;DI_MMSZ5233BS;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5233BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.71 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=3.11 N=3.00 ) MMSZ5234B*SRC=MMSZ5234B;DI_MMSZ5234B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5234B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) MMSZ5234BS*SRC=MMSZ5234BS;DI_MMSZ5234BS;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5234BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) MMSZ5235B*SRC=MMSZ5235B;DI_MMSZ5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) MMSZ5235BS*SRC=MMSZ5235BS;DI_MMSZ5235BS;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5235BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) MMSZ5236B*SRC=MMSZ5236B;DI_MMSZ5236B;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5236B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) MMSZ5236BS*SRC=MMSZ5236BS;DI_MMSZ5236BS;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5236BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) MMSZ5237B*SRC=MMSZ5237B;DI_MMSZ5237B;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5237B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=4.11 N=3.00 ) MMSZ5237BS*SRC=MMSZ5237BS;DI_MMSZ5237BS;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5237BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=4.11 N=3.00 ) MMSZ5238B*SRC=MMSZ5238B;DI_MMSZ5238B;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5238B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.36 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.74f RS=4.11 N=3.00 ) MMSZ5238BS*SRC=MMSZ5238BS;DI_MMSZ5238BS;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5238BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.36 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.74f RS=4.11 N=3.00 ) MMSZ5239B*SRC=MMSZ5239B;DI_MMSZ5239B;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5239B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=6.11 N=3.00 ) MMSZ5239BS*SRC=MMSZ5239BS;DI_MMSZ5239BS;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5239BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=6.11 N=3.00 ) MMSZ5240B*SRC=MMSZ5240B;DI_MMSZ5240B;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5240B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.47 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=13.1 N=3.00 ) MMSZ5240BS*SRC=MMSZ5240BS;DI_MMSZ5240BS;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5240BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.47 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=13.1 N=3.00 ) MMSZ5241B*SRC=MMSZ5241B;DI_MMSZ5241B;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5241B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.36 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=18.1 N=3.00 ) MMSZ5241BS*SRC=MMSZ5241BS;DI_MMSZ5241BS;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5241BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.36 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=18.1 N=3.00 ) MMSZ5242B*SRC=MMSZ5242B;DI_MMSZ5242B;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5242B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.19 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=26.1 N=3.00 ) MMSZ5242BS*SRC=MMSZ5242BS;DI_MMSZ5242BS;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5242BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.19 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=26.1 N=3.00 ) MMSZ5243B*SRC=MMSZ5243B;DI_MMSZ5243B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5243B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=4.82 N=3.00 ) MMSZ5243BS*SRC=MMSZ5243BS;DI_MMSZ5243BS;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5243BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=4.82 N=3.00 ) MMSZ5245B*SRC=MMSZ5245B;DI_MMSZ5245B;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5245B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=6.86 N=3.00 ) MMSZ5245BS*SRC=MMSZ5245BS;DI_MMSZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5245BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=6.86 N=3.00 ) MMSZ5246B*SRC=MMSZ5246B;DI_MMSZ5246B;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5246B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=7.04 N=3.00 ) MMSZ5246BS*SRC=MMSZ5246BS;DI_MMSZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5246BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=7.04 N=3.00 ) MMSZ5248B*SRC=MMSZ5248B;DI_MMSZ5248B;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5248B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=9.90 N=3.00 ) MMSZ5248BS*SRC=MMSZ5248BS;DI_MMSZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5248BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=9.90 N=3.00 ) MMSZ5250B*SRC=MMSZ5250B;DI_MMSZ5250B;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5250B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=8.47 N=3.00 ) MMSZ5250BS*SRC=MMSZ5250BS;DI_MMSZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5250BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=8.47 N=3.00 ) MMSZ5251B*SRC=MMSZ5251B;DI_MMSZ5251B;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5251B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=15.1 N=3.00 ) MMSZ5251BS*SRC=MMSZ5251BS;DI_MMSZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5251BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=15.1 N=3.00 ) MMSZ5252B*SRC=MMSZ5252B;DI_MMSZ5252B;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5252B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=18.1 N=3.00 ) MMSZ5252BS*SRC=MMSZ5252BS;DI_MMSZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5252BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=18.1 N=3.00 ) MMSZ5254B*SRC=MMSZ5254B;DI_MMSZ5254B;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5254B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=25.5 N=3.00 ) MMSZ5254BS*SRC=MMSZ5254BS;DI_MMSZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5254BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=25.5 N=3.00 ) MMSZ5255B*SRC=MMSZ5255B;DI_MMSZ5255B;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5255B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=26.7 N=3.00 ) MMSZ5255BS*SRC=MMSZ5255BS;DI_MMSZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5255BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=26.7 N=3.00 ) MMSZ5256B*SRC=MMSZ5256B;DI_MMSZ5256B;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5256B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=30.5 N=3.00 ) MMSZ5256BS*SRC=MMSZ5256BS;DI_MMSZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5256BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=30.5 N=3.00 ) MMSZ5257B*SRC=MMSZ5257B;DI_MMSZ5257B;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5257B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=37.6 N=3.00 ) MMSZ5257BS*SRC=MMSZ5257BS;DI_MMSZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5257BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=37.6 N=3.00 ) MMSZ5258B*SRC=MMSZ5258B;DI_MMSZ5258B;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5258B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=5.72p RS=3.55k N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=47.1 N=3.00 ) MMSZ5258BS*SRC=MMSZ5258BS;DI_MMSZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5258BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=47.1 N=3.00 ) MMSZ5259B*SRC=MMSZ5259B;DI_MMSZ5259B;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5259B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=55.7 N=3.00 ) MMSZ5259BS*SRC=MMSZ5259BS;DI_MMSZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5259BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=55.7 N=3.00 ) MMSZ5263B*SRC=MMSZ5263B;MMSZ5263B;Diodes;Zener >50V; 56.0V 0.500W DIODES Zener *SYM=HZEN .SUBCKT MMSZ5263B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 53.5 .MODEL DF D ( IS=3.68p RS=28.1 N=1.10 + CJO=11.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36e-016 RS=115 N=3.00 ) .ENDS MUR120*SRC=MUR120;DI_MUR120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MUR120 D ( IS=7.06e-017 RS=73.4m BV=200 IBV=2.00u + CJO=49.9p M=0.333 N=0.700 TT=36.0n ) MURS120*SRC=MURS120;DI_MURS120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS120 D ( IS=17.1n RS=20.6m BV=200 IBV=2.00u + CJO=60.0p M=0.333 N=1.73 TT=36.0n ) ************************************************************************************************************************************ MURS140*SRC=MURS140;DI_MURS140;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS140 D ( IS=17.1n RS=20.6m BV=400 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** MURS160*SRC=MURS160;DI_MURS160;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS160 D ( IS=17.1n RS=20.6m BV=600 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** MURS320*SRC=MURS320;DI_MURS320;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS320 D ( IS=11.8n RS=7.89m BV=200 IBV=5.00u + CJO=45.0p M=0.333 N=1.56 TT=36.0n ) *********************************************************************************************************************************** PD3R1600*PD3R1600 Spice Model v1.0 Last Revised 04/02/2014 Diodes Inc SURFACE MOUNT STANDARD RECTIFIER .MODEL DI_PD3R1600 D ( IS=240.8p RS=22.56m BV=660 IBV=10 + CJO=5.000n M=528.1m N=1.620 TT=10.00n EG=480m VJ=139.2m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan PD3S0230*SRC=PS3S0230;DI_PD3S0230;Diodes;Si; 30.0V 0.200A 2.00ns Diodes INC Schottky Diode .MODEL DI_PD3S0230 D ( IS=400n RS=0.378 BV=30.0 IBV=2.00u + CJO=14.6p M=0.333 N=1.31 TT=2.88n ) PD3S120L*SRC=PD3S120L;DI_PD3S120L;Diodes;Si; 20.0V 1.00A 18.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S120L D ( IS=4.60u RS=41.2m BV=20.0 IBV=70.0u + CJO=112p M=0.333 N=1.03 TT=25.9n ) PD3S130H*SRC=PS3S130H;DI_PD3S130H;Diodes;Si; 30.0V 1.00A 17.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130H D ( IS=425n RS=67.9m BV=30.0 IBV=100u + CJO=97.1p M=0.333 N=1.07 TT=25.2n ) PD3S130L*SRC=PS3S130L;DI_PD3S130L;Diodes;Si; 30.0V 1.00A 21.5ns Diodes INC Schottky rectifier .MODEL DI_PD3S130L D ( IS=6.92u RS=35.0m BV=30.0 IBV=1.50m + CJO=97.1p M=0.333 N=0.953 TT=31.0n ) PD3S140*SRC=PS3S140;DI_PD3S140;Diodes;Si; 40.0V 1.00A 27.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S140 D ( IS=91.2n RS=62.2m BV=40.0 IBV=50.0u + CJO=77.7p M=0.333 N=0.996 TT=38.9n ) PD3S160*SRC=PS3S160;DI_PD3S160;Diodes;Si; 60.0V 1.00A 13.0ns Diodes INC Schottky rectifier .MODEL DI_PD3S160 D ( IS=82.7n RS=57.6m BV=60.0 IBV=100u + CJO=92.2p M=0.333 N=1.09 TT=18.7n ) PD3S230L* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=13/10/2009 *VERSION=1 * .MODEL PD3S230L D IS=1.07E-5 N=1 ISR=7E-6 NR=1 BV=33 + IBV=1E-4 NBV=5 IBVL=6E-6 NBVL=200 RS=0.035 CJO=220E-12 + VJ=0.33 M=0.40 EG=0.6 XTI=2 TRS1=6E-3 * *$ PDR3G*SRC=PDR3G;DI_PDR3G;Diodes;Si; 400V 3.00A 3.09us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR3G D ( IS=5.82n RS=13.9m BV=400 IBV=10.0u + CJO=38.5p M=0.333 N=1.70 TT=4.45u ) PDR5G*SRC=PDR5G;DI_PDR5G;Diodes;Si; 400V 5.00A 3.32us Diodes Inc. Standard Recovery Rectifier .MODEL DI_PDR5G D ( IS=8.05n RS=8.40m BV=400 IBV=10.0u + CJO=75.6p M=0.333 N=1.70 TT=4.78u ) PDR5K*TITLE=PDR5K *DATE=1/04/2015 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL PDR5K D(IS=1n RS=.006 BV=850 IBV=50u CJO=88p M=.4 VJ=.6 N=1.5 ISR=2n TRS1=0 XTI1=3 IKF=10 TT=2u EG=1.18) * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * PDS1040*SRC=PDS1040;DI_PDS1040;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky .MODEL DI_PDS1040 D ( IS=2.78u RS=2.78m BV=40.0 IBV=700u + CJO=1.72n M=0.333 N=1.05 TT=14.4n ) PDS1040CTL*SRC=PDS1040CTL;Di_PDS1040CTL;Diodes;Si; 40.0V 10.0A 20.0ns Diodes Inc. 10A Dual Low VF Schottky Barrier Rectifier Per Node .MODEL Di_PDS1040CTL D ( IS=21.5u RS=4.20m BV=40.0 IBV=200u + CJO=789p M=0.333 N=1.28 TT=28.8n ) PDS1040L*SRC=PDS1040L;Di_PDS1040L;Diodes;Si; 40.0V 10.0A 35.0ns Diodes Inc. 10A Low VF Schottky Barrier Rectifier .MODEL Di_PDS1040L D ( IS=6.02u RS=4.20m BV=40.0 IBV=600u + CJO=2.21n M=0.333 N=1.04 TT=50.4n ) PDS1045*SRC=PDS1045;Di_PDS1045;Diodes;Si; 45.0V 10.0A 31.1ns Diodes Inc. 10A Schottky Barrier Rectifier .MODEL Di_PDS1045 D ( IS=17.0u RS=4.20m BV=45.0 IBV=600u + CJO=2.25n M=0.333 N=1.11 TT=44.8n ) PDS3100*SRC=PDS3100;DI_PDS3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. 3A HV Schottky Barrier Rectifier .MODEL DI_PDS3100 D ( IS=20.9u RS=13.9m BV=100 IBV=200u + CJO=305p M=0.333 N=1.70 TT=14.4n ) PDS3200*DIODES_INC_SPICE_MODEL_PDS3200 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/06/2014 *VERSION=1 .MODEL PDS3200 D (IS=10E-9 RS=0.026 ISR=.1u BV=202.0 IBV=1u + CJO=500p M=0.4 VJ=.55 N=1 IKF=.09 EG=.95 XTI=1.5 TT=30n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * PDS340*SRC=PDS340;DI_PDS340;Diodes;Si; 40.0V 3.00A 13.0ns Diodes Inc. Schottky .MODEL DI_PDS340 D ( IS=2.59u RS=13.5m BV=40.0 IBV=500u + CJO=630p M=0.333 N=1.11 TT=18.7n ) PDS360* *Zetex PDS360 Spice Model v1.0 Last Revised 20/02/09 * .MODEL PDS360 D IS=0.7E-7 N=1.02 ISR=0.94E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=8E-8 NBVL=300 RS=0.034 CJO=390E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA PDS4150*SRC=PDS4150;DI_PDS4150;Diodes;Si; 150V 4.00A 15.0ns Diodes Inc. 4A HV Schottky Barrier Rectifier .MODEL DI_PDS4150 D ( IS=19.2u RS=5.66m BV=150 IBV=10.0u + CJO=630p M=0.333 N=1.89 TT=21.6n ) PDS5100*SRC=PDS5100;DI_PDS5100;Diodes;Si; 100V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS5100 D ( IS=49.0u RS=7.63m BV=100 IBV=200u + CJO=375p M=0.333 N=1.84 TT=21.6n ) PDS5100H*PDS5100H Spice Model v2.0 Last Revised 05/12/2014 Diodes Inc SCHOTTKY BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL PDS5100H D ( IS=9.000n RS=18.00m BV=105.0 IBV=36.54u + CJO=836.0p M=450.0m N=970.0m TT=18.50n EG=800.0m VJ=450.0m XTI=1.500 ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan PDS540*SRC=PDS540;DI_PDS540;Diodes;Si; 40.0V 5.00A 15.0ns Diodes Inc. 5A Schottky Barrier Rectifier .MODEL DI_PDS540 D ( IS=9.59u RS=10.7m BV=40.0 IBV=300u + CJO=727p M=0.333 N=1.26 TT=21.6n ) PDS560*DIODES_INC_SPICE_MODEL_PDS560 *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=4/08/2014 *VERSION=1 .MODEL PDS560 D (IS=18E-8 RS=0.018 ISR=20E-8 BV=60.0 IBV=1u + CJO=500p M=0.4 VJ=.4 N=.97 IKF=.35 EG=.69 XTI=1.5 NR=1.2 TT=20n) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * PDS760* *Zetex PDS760 Spice Model v1.0 Last Revised 24/02/09 * .MODEL PDS760 D IS=2.1E-7 N=1.02 ISR=2.6E-7 NR=1.1 BV=63 IBV=2E-4 + NBV=2 IBVL=5.5E-7 NBVL=350 RS=0.016 CJO=1060E-12 VJ=1.1 M=0.53 + EG=0.74 XTI=2 TRS1=4e-3 * *$ * * (c) 2009 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA PDS835L*SRC=PDS835L;DI_PDS835L;Diodes;Si; 35.0V 8.00A 15.0ns Diodes Inc. 8A Low VF Schottky Barrier Rectifier .MODEL DI_PDS835L D ( IS=42.9u RS=6.30m BV=35.0 IBV=1.40m + CJO=623p M=0.333 N=1.43 TT=21.6n ) PDU340*SRC=PDU340;DI_PDU340;Diodes;Si; 400V 3.00A 50.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU340 D ( IS=3.74u RS=25.9m BV=400 IBV=10.0u + CJO=86.2p M=0.333 N=2.58 TT=72.0n ) PDU420*SRC=PDU420;DI_PDU420;Diodes;Si; 400V 4.00A 25.0ns Diodes Inc. ultrafast rectifier .MODEL DI_PDU420 D ( IS=189n RS=10.5m BV=400 IBV=5.00u + CJO=276p M=0.333 N=1.73 TT=36.0n ) PDU540*SRC=PDU540;DI_PDU540;Diodes;Si; 400V 5.00A 35.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU540 D ( IS=2.68u RS=8.33m BV=400 IBV=10.0u + CJO=196p M=0.333 N=2.27 TT=50.4n ) PDU620*SRC=PDU620;DI_PDU620;Diodes;Si; 200V 6.00A 25.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU620 D ( IS=190n RS=9.91m BV=200 IBV=5.00u + CJO=402p M=0.333 N=1.69 TT=36.0n ) PDU620CT*SRC=PDU620CT;DI_PDU620CT;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Ultrafast Rectifier .MODEL DI_PDU620CT D ( IS=7.48n RS=19.5m BV=200 IBV=5.00u + CJO=223p M=0.333 N=1.42 TT=36.0n ) PR1001G*SRC=PR1001G;DI_PR1001G;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1001G D ( IS=5.00n RS=29.8m BV=50.0 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) PR1002G*SRC=PR1002G;DI_PR1002G;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1002G D ( IS=5.00n RS=29.8m BV=100 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) PR1003G*SRC=PR1003G;DI_PR1003G;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1003G D ( IS=5.00n RS=29.8m BV=200 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) PR1004G*SRC=PR1004G;DI_PR1004G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1004G D ( IS=5.00n RS=29.8m BV=400 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) PR1005G*SRC=PR1005G;DI_PR1005G;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_PR1005G D ( IS=5.00n RS=29.8m BV=600 IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=360n ) PR1006G*SRC=PR1006G;DI_PR1006G;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_PR1006G D ( IS=5.00n RS=29.8m BV=800 IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=720n ) PR1007G*SRC=PR1007G;DI_PR1007G;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_PR1007G D ( IS=5.00n RS=29.8m BV=1.00k IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=720n ) PR6001*SRC=PR6001;DI_PR6001;Diodes;Si; 50.0V 6.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR6001 D ( IS=863n RS=12.6m BV=50.0 IBV=10.0u + CJO=663p M=0.333 N=1.70 TT=216n ) QSBT40******************************************************************************************************************************************* *SRC=QSBT40;DI_QSBT40;Diodes;Si; 30.0V 0.200A 50.0ns Diodes Inc. Schottky Bus - Single Device of Multiple .MODEL DI_QSBT40 D ( IS=500n RS=0.211 BV=30.0 IBV=2.00u + CJO=10.0p M=0.333 N=1.70 TT=72.0n ) ******************************************************************************************************************************************* QSBT40******************************************************************************************************************************************* *SRC=QSBT40;DI_QSBT40;Diodes;Si; 30.0V 0.200A 50.0ns Diodes Inc. Schottky Bus - Single Device of Multiple .MODEL DI_QSBT40 D ( IS=500n RS=0.211 BV=30.0 IBV=2.00u + CJO=10.0p M=0.333 N=1.70 TT=72.0n ) ******************************************************************************************************************************************* QZX363C12*SRC=QZX363C12;DI_QZX363C12;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=9.46 N=3.00 ) QZX363C15*SRC=QZX363C15;DI_QZX363C15;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=14.5 N=3.00 ) QZX363C20*SRC=QZX363C20;DI_QZX363C20;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) QZX363C5V6*SRC=QZX363C5V6;DI_QZX363C5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) QZX363C6V8*SRC=QZX363C6V8;DI_QZX363C6V8;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) QZX563C6V8C*SRC=QZX563C6V8C;DI_QZX563C6V8C;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_QZX563C6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23 RH02*SRC=RH02;DI_RH02;Diodes;Si; 200V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH02 D ( IS=2.25n RS=0.100 BV=200 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) RH04*SRC=RH04;DI_RH04;Diodes;Si; 400V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH04 D ( IS=2.25n RS=0.100 BV=400 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) RH06*SRC=RH06;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH06 D ( IS=2.25n RS=0.100 BV=600 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=360n ) RS1A*SRC=RS1A;DI_RS1A;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1A D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* RS1AB*SRC=RS1AB;DI_RS1AB;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1AB D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* RS1B*SRC=RS1B;DI_RS1B;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1B D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** RS1BB*SRC=RS1BB;DI_RS1BB;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1BB D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** RS1D*SRC=RS1D;DI_RS1D;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1D D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** RS1DB*SRC=RS1DB;DI_RS1DB;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1DB D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** RS1G*SRC=RS1G;DI_RS1G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1G D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** RS1GB*SRC=RS1GB;DI_RS1GB;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1GB D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** RS1J*SRC=RS1J;DI_RS1J;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1J D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** RS1JB*SRC=RS1JB;DI_RS1JB;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1JB D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** RS1K*SRC=RS1K;DI_RS1K;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1K D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** RS1KB*SRC=RS1KB;DI_RS1KB;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1KB D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** RS1M*SRC=RS1M;DI_RS1M;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1M D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** RS1MB*SRC=RS1MB;DI_RS1MB;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1MB D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** RS2A*SRC=RS2A;DI_RS2A;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2A D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** RS2AA*SRC=RS2AA;DI_RS2AA;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2AA D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** RS2B*SRC=RS2B;DI_RS2B;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2B D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** RS2BA*SRC=RS2BA;DI_RS2BA;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2BA D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** RS2D*SRC=RS2D;DI_RS2D;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2D D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** RS2DA*SRC=RS2DA;DI_RS2DA;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2DA D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** RS2G*SRC=RS2G;DI_RS2G;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2G D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** RS2GA*SRC=RS2GA;DI_RS2GA;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2GA D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** RS2J*SRC=RS2J;DI_RS2J;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2J D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** RS2JA*SRC=RS2JA;DI_RS2JA;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2JA D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** RS2K*SRC=RS2K;DI_RS2K;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2K D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** RS2KA*SRC=RS2KA;DI_RS2KA;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2KA D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** RS2M*SRC=RS2M;DI_RS2M;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2M D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** RS2MA*SRC=RS2MA;DI_RS2MA;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2MA D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** RS3A*SRC=RS3A;DI_RS3A;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3A D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** RS3AB*SRC=RS3AB;DI_RS3AB;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3AB D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** RS3B*SRC=RS3B;DI_RS3B;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3B D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** RS3BB*SRC=RS3BB;DI_RS3BB;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3BB D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** RS3D*SRC=RS3D;DI_RS3D;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3D D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** RS3DB*SRC=RS3DB;DI_RS3DB;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3DB D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** RS3G*SRC=RS3G;DI_RS3G;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3G D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** RS3GB*SRC=RS3GB;DI_RS3GB;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3GB D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** RS3J*SRC=RS3J;DI_RS3J;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3J D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** RS3JB*SRC=RS3JB;DI_RS3JB;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3JB D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** RS3K*SRC=RS3K;DI_RS3K;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3K D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** RS3KB*SRC=RS3KB;DI_RS3KB;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3KB D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** RS3M*SRC=RS3M;DI_RS3M;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3M D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** RS3MB*SRC=RS3MB;DI_RS3MB;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3MB D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** S1A*SRC=S1A;DI_S1A;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1A D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1AB*SRC=S1AB;DI_S1AB;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1AB D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1B*SRC=S1B;DI_S1B;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1B D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1BB*SRC=S1BB;DI_S1BB;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1BB D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1D*SRC=S1D;DI_S1D;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1D D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1DB*SRC=S1DB;DI_S1DB;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1DB D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1G*TITLE=S1G-13-F *DATE=19/11/2013 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .model S1G-13-F D(IS=.0005n RS=0.03 CJO=17p M=0.5 VJ=0.75 N=1.1 IKF=.15 ISR=.01u + BV=401 IBV=100u TT=150n EG=.95 TRS1=.1m) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL S1GB*SRC=S1GB;DI_S1GB;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1GB D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1J*SRC=S1J;DI_S1J;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1J D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1JB*SRC=S1JB;DI_S1JB;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1JB D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1K*SRC=S1K;DI_S1K;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1K D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1KB*SRC=S1KB;DI_S1KB;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1KB D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1M*SRC=S1M;DI_S1M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1M D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S1MB*SRC=S1MB;DI_S1MB;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1MB D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) S2A*SRC=S2A;DI_S2A;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2A D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2AA*SRC=S2AA;DI_S2AA;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2AA D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2B*SRC=S2B;DI_S2B;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2B D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2BA*SRC=S2BA;DI_S2BA;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2BA D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2D*SRC=S2D;DI_S2D;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2D D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2DA*SRC=S2DA;DI_S2DA;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2DA D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2G*SRC=S2G;DI_S2G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2G D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2GA*SRC=S2GA;DI_S2GA;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2GA D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2J*SRC=S2J;DI_S2J;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2J D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2JA*SRC=S2JA;DI_S2JA;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2JA D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2K*SRC=S2K;DI_S2K;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2K D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2KA*SRC=S2KA;DI_S2KA;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2KA D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2M*SRC=S2M;DI_S2M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2M D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S2MA*SRC=S2MA;DI_S2MA;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2MA D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) S3A*SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3AB*SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3B*SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3BB*SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3D*SRC=S3D;DI_S3D;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3D D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3DB*SRC=S3DB;DI_S3DB;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3DB D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3G*SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3GB*SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3K*SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3KB*SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3M*SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S3MB*SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) S5AC*SRC=S5AC;DI_S5AC;Diodes;Si; 50.0V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5AC D ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) S5BC*SRC=S5BC;DI_S5BC;Diodes;Si; 100V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5BC D ( IS=2.28n RS=8.40m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) S5DC*SRC=S5DC;DI_S5DC;Diodes;Si; 200V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5DC D ( IS=2.28n RS=8.40m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) S5GC*SRC=S5GC;DI_S5GC;Diodes;Si; 400V 5.00A 2.00us Diodes Inc. .MODEL DI_S5GC D ( IS=2.28n RS=8.40m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) S5JC*SRC=S5JC;DI_S5JC;Diodes;Si; 600V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5JC D ( IS=2.28n RS=8.40m BV=600 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) S5KC*SRC=S5KC;DI_S5KC;Diodes;Si; 800V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5KC D ( IS=2.28n RS=8.40m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) S5MC*SRC=S5MC;DI_S5MC;Diodes;Si; 1.00kV 5.00A 2.00us Diodes Inc. - .MODEL DI_S5MC D ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) S8KC*SRC=S8KC;S8KC;Diodes;Si; 800V 8.00A 3.00us Diodes Inc .MODEL S8KC D ( IS=777n RS=8.87m BV=800 IBV=10.0u + CJO=74.0 M=0.333 N=1.65 TT=4.32u ) S8MC*SRC=S8MC;S8MC;Diodes;Si; 1.00kV 8.00A 3.00us Diodes Inc .MODEL S8MC D ( IS=777n RS=8.87m BV=1.00k IBV=10.0u + CJO=74.0 M=0.333 N=1.65 TT=4.32u SB1100*SRC=SB1100;DI_SB1100;Diodes;Si; 100.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB1100 D ( IS=6.63u RS=62.3m BV=100.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) SB120*SRC=SB120;DI_SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) SB130*SRC=SB130;DI_SB130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB130 D ( IS=31.5u RS=49.2m BV=30.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) SB140*SRC=SB140;DI_SB140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB140 D ( IS=31.5u RS=49.2m BV=40.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) SB150*SRC=SB150;DI_SB150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB150 D ( IS=1.17u RS=42.0m BV=50.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) SB160*SRC=SB160;DI_SB160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB160 D ( IS=1.17u RS=42.0m BV=60.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) SB170*SRC=SB170;DI_SB170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB170 D ( IS=6.63u RS=62.3m BV=70.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) SB180*SRC=SB180;DI_SB180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB180 D ( IS=6.63u RS=62.3m BV=80.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) SB190*SRC=SB190;DI_SB190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB190 D ( IS=6.63u RS=62.3m BV=90.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) SB340*SRC=SB340;DI_SB340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB340 D ( IS=85.9n RS=18.5m BV=40.0 IBV=70.0u + CJO=411p M=0.333 N=0.754 TT=7.20n ) SBG3030CT*SRC=SBG3030CT;DI_SBG3030CT;Diodes;Si; 30.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3030CT D ( IS=31.1u RS=3.70m BV=30.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== SBG3040CT*SRC=SBG3040CT;DI_SBG3040CT;Diodes;Si; 40.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3040CT D ( IS=31.1u RS=3.70m BV=40.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== SBG3045CT*SRC=SBG3045CT;DI_SBG3045CT;Diodes;Si; 45.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3045CT D ( IS=31.1u RS=3.70m BV=45.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== SBL1030*SRC=SBL1030;DI_SBL1030;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1030 D ( IS=759u RS=4.20m BV=30.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) SBL1035*SRC=SBL1035;DI_SBL1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1035 D ( IS=759u RS=4.20m BV=35.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) SBL1040*SRC=SBL1040;DI_SBL1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1040 D ( IS=759u RS=4.20m BV=40.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) SBL1045*SRC=SBL1045;DI_SBL1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1045 D ( IS=759u RS=4.20m BV=45.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) SBL1050*SRC=SBL1050;DI_SBL1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1050 D ( IS=210u RS=4.22m BV=50.0 IBV=1.00m + CJO=2.12n M=0.333 N=2.03 TT=7.20n ) SBL1060*SRC=SBL1060;DI_SBL1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1060 D ( IS=210u RS=4.22m BV=60.0 IBV=1.00m + CJO=2.12n M=0.333 N=2.03 TT=7.20n ) SBL1630PT*SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1630PT D ( IS=575u RS=3.47m BV=30.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) SBL1635PT*SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1635PT D ( IS=575u RS=3.47m BV=35.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) SBL1640PT*SRC=SBL1640PT;DI_SBL1640PT;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1640PT D ( IS=575u RS=3.47m BV=40.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) SBL1645PT*SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1645PT D ( IS=575u RS=3.47m BV=45.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) SBL1650PT*SRC=SBL1650PT;DI_SBL1650PT;Diodes;Si; 50.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1650PT D ( IS=89.9u RS=3.60m BV=50.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) SBL1660PT*SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1660PT D ( IS=89.9u RS=3.60m BV=60.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) SBL2035CT*SRC=SBL2035CT;DI_SBL2035CT;Diodes;Si; 35.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2035CT D ( IS=4.83m RS=2.37m BV=35.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) SBL2040CT*SRC=SBL2040CT;DI_SBL2040CT;Diodes;Si; 40.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2040CT D ( IS=4.83m RS=2.37m BV=40.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) SBL2045CT*SRC=SBL2045CT;DI_SBL2045CT;Diodes;Si; 45.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2045CT D ( IS=4.83m RS=2.37m BV=45.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) SBL2050CT*SRC=SBL2050CT;DI_SBL2050CT;Diodes;Si; 50.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2050CT D ( IS=3.50m RS=2.11m BV=50.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.95 TT=14.4n ) SBL3030CT (Discontinued)*SRC=SBL3030CT;DI_SBL3030CT;Diodes;Si; 30.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3030CT D ( IS=200u RS=1.92m BV=30.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) SBL3040CT (Discontinued)*SRC=SBL3040CT;DI_SBL3040CT;Diodes;Si; 40.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3040CT D ( IS=200u RS=1.92m BV=40.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) SBL30L30CT*SRC=SBL30L30CT;DI_SBL30L30CT;Diodes;Si; 30.0V 30.0A 50.0ns Diodes INC Schottky Rectifier .MODEL DI_SBL30L30CT D ( IS=60.6u RS=2.64m BV=30.0 IBV=1.50m + CJO=3.05u M=0.333 N=1.22 TT=72.0n SBL4030PT*SRC=SBL4030PT;DI_SBL4030PT;Diodes;Si; 30.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4030PT D ( IS=10.9u RS=1.53m BV=30.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) SBL4035PT*SRC=SBL4035PT;DI_SBL4035PT;Diodes;Si; 35.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4035PT D ( IS=10.9u RS=1.53m BV=35.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) SBL4040PT*SRC=SBL4040PT;DI_SBL4040PT;Diodes;Si; 40.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4040PT D ( IS=10.9u RS=1.53m BV=40.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) SBL4045PT*SRC=SBL4045PT;DI_SBL4045PT;Diodes;Si; 45.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4045PT D ( IS=10.9u RS=1.53m BV=45.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) SBL4050PT*SRC=SBL4050PT;DI_SBL4050PT;Diodes;Si; 50.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4050PT D ( IS=53.0u RS=1.26m BV=50.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.70 TT=14.4n ) SBL4060PT*SRC=SBL4060PT;DI_SBL4060PT;Diodes;Si; 60.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4060PT D ( IS=53.0u RS=1.26m BV=60.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.70 TT=14.4n ) SBL530*SRC=SBL530;DI_SBL530;Diodes;Si; 30.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL530 D ( IS=926u RS=9.47m BV=30.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) SBL535*SRC=SBL535;DI_SBL535;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL535 D ( IS=926u RS=9.47m BV=35.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) SBL540*SRC=SBL540;DI_SBL540;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL540 D ( IS=926u RS=9.47m BV=40.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) SBL545*SRC=SBL545;DI_SBL545;Diodes;Si; 45.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL545 D ( IS=926u RS=9.47m BV=45.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) SBL550*SRC=SBL550;DI_SBL550;Diodes;Si; 50.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL550 D ( IS=14.0u RS=8.33m BV=50.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) SBL560*SRC=SBL560;DI_SBL560;Diodes;Si; 60.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL560 D ( IS=14.0u RS=8.33m BV=60.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) SBL6030PT*SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si; 30.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6030PT D ( IS=1.93m RS=917u BV=30.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) SBL6040PT*SRC=SBL6040PT;DI_SBL6040PT;Diodes;Si; 40.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6040PT D ( IS=1.93m RS=917u BV=40.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) SBL6050PT*SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si; 50.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6050PT D ( IS=353u RS=909u BV=50.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) SBL6060PT*SRC=SBL6060PT;DI_SBL6060PT;Diodes;Si; 60.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6060PT D ( IS=353u RS=909u BV=60.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) SBR02U100LP.MODEL SBR02U100LP D ( + IS=37.999E-9 + N=1.2423 + RS=1.0042 + IKF=6.4683E-3 + CJO=138.07E-12 + M=1.4985 + VJ=.79033 + ISR=7.0384E-12 + NR=4.9950 + BV=103 + IBV=1.0000E-3 + XTI=2.67 ) SBR05U20LP*SRC=SBR05U20LP;DI_SBR05U20LP;Diodes;Si; 20.0V 0.500A 40.0ns Diodes INC Schottky rectifier .MODEL DI_SBR05U20LP D ( IS=2.83u RS=0.188 BV=20.0 IBV=20.0u + CJO=53.0p M=0.333 N=1.18 TT=57.6n ) SBR10U40CT*SRC=SBR10U40CT;DI_SBR10U40CT;Diodes;Si; 40.0V 5.00A 35.0ns Diodes INC SBR rectifier .MODEL DI_SBR10U40CT D ( IS=6.83m RS=6.69u BV=40.0 IBV=0.100 + CJO=593p M=0.333 N=7.19 TT=50.4n ) SBR10U45SP5*DIODES_INC_SPICE_MODEL SBR10U45SP5 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=3/10/2012 *VERSION=1 .MODEL SBR10U45SP5 D( IS=28E-6 RS=10m BV=46.0 IBV=300u N=.97 TT=10n EG=.48 TRS1=4m CJO=12590p M=.8 VJ=.4) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * SBR12U45LHThe SBR12U45LH uses SBR patented technology that offers ultra low VF to reduce forward power loss and improve efficiency. Encapsulated in the new PDI-5SP package with a 0.75mm low height profile and protruding leads for easy soldering, it is specially suited for use as a bypass diode in solar panels. SBR130S3*SRC=SBR130S3;SBR130S3;Diodes;Si; 30.0V 1.00A 39.0ns Diodes .MODEL SBR130S3 D ( IS=7.30u RS=80.3m BV=30.0 IBV=12.2u + CJO=416p M=0.333 N=1.09 TT=56.2n SBR15U50SP5*SBRT15U50SP5 Spice Model v1.0 Last Revised 10/30/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U50SP5 D ( IS=74.23u RS=5.775m BV=55.00 IBV=10.00 + CJO=14.41n M=489.9m N=1.023 TT=49.80n EG=480.0m VJ=20.30m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBR1U150SA*SBR1U150SA Spice Model v1.0 Last Revised 05/07/2014 Diodes Inc SURFACE MOUNT SUPER BARRIER RECTIFIER .MODEL DI_SBR1U150SA D ( IS=1.020m RS=1.983u BV=165.00 IBV=10.00 + CJO=1.164n M=461.9m N=3.651 TT=10.00n EG=480.0m VJ=12.68m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBR1U30CSP*TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Dec2014 *VERSION=1 .MODEL SBR1U30CSP D( IS=5.5u RS=50m BV=32 IBV=150.0u CJO=750p M=1 VJ=.45 N=1.05 TT=30n EG=.5 TRS1=5m IKF=85m) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * SBR1U30SV*TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Dec2014 *VERSION=1 .MODEL SBR1U30CSP D( IS=5.5u RS=45m BV=32 IBV=150.0u CJO=750p M=1 VJ=.45 N=1.05 TT=30n EG=.5 TRS1=5m IKF=85m) * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * SBR1U400P1*TITLE=SBR1U400P1 *DATE=12/03/2012 *ORIGIN=DZSL_DPG_SU *SIMULATOR=SIMETRIX *VERSION=1 .MODEL SBR1U400P1 D(IS=70n RS=.05 BV=401 IBV=50u CJO=65p M=.41 VJ=.41 N=1.25 ISR=20n IKF=.51m TRS1=0 XTI1=3 TT=85n EG=.75 TIKF=.1) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * SBR1U40LP*TITLE: SBR1U40LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=27Apr2012 *VERSION=1 *PIN 1=Anode 2=Cathode .SUBCKT SBR1U40LP 1 2 M1 3 4 5 5 NMOD D1 5 3 DMOD R1 1 4 1u C1 3 5 1p R2 1 5 1u R3 3 2 1u .MODEL NMOD NMOS(LEVEL=3 VTO=.24 TOX=90E-10 NSUB=6E+15 KP=40 NFS=.2E+12 RS=0.3) .MODEL DMOD D(IS=5.7E-7 TT=3u N=1.74) .ENDS .SIMULATOR DEFAULT * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL SBR20A200CTB*SRC=SBR20A200CTB;DI_SBR20A200CTB;Diodes;Si; 200V 20.0A 20.0ns Diodes INC Schottky rectifier .MODEL DI_SBR20A200CTB D ( IS=4.16m RS=1.34m BV=200 IBV=3.28u + CJO=514p M=0.333 N=3.98 TT=28.8n SBR20U150CT*SRC=SBR20U150CT;DI_SBR20U150CT;Diodes;Si; 150V 20.0A 30.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR20U150CT D ( IS=3.25m RS=2.57m BV=150 IBV=500u + CJO=11.3n M=0.333 N=3.28 TT=43.2n ) SBR20U150CTFP*SRC=SBR20U150CTFP;DI_SBR20U150CTFP;Diodes;Si; 150V 20.0A 30.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR20U150CTFP D ( IS=3.25m RS=2.57m BV=150 IBV=500u + CJO=11.3n M=0.333 N=3.28 TT=43.2n ) SBR2A30P1*SRC=SBR2A30P1;DI_SBR2A30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A30P1 D ( IS=78.9u RS=29.8m BV=30.0 IBV=60.0u + CJO=806p M=0.333 N=1.25 TT=17.3n) SBR2A40P1*SRC=SBR2A40P1;DI_SBR2A40P1;Diodes;Si; 40.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A40P1 D ( IS=17.0u RS=28.8m BV=40.0 IBV=15.9u + CJO=705p M=0.333 N=1.17 TT=17.3n) SBR2M30P1*SRC=SBR2M30P1;DI_SBR2M30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2M30P1 D ( IS=17.0u RS=28.8m BV=30.0 IBV=20.0u + CJO=865p M=0.333 N=1.17 TT=17.3n) SBR2U10LP*TITLE: SBR2U10LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=9Jun2014 *VERSION=1 .MODEL SBR2U10LP D( IS=26u RS=20m BV=11 IBV=150.0u CJO=790p M=0.65 VJ=.4 N=1.05 TT=50n EG=.5 TRS1=6m ISR=50u) * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL SBR2U150SA*TITLE: SBR2U150SA *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=16Dec2014 *VERSION=1 .SUBCKT SBR2U150SA 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D ( IS=4u RS=.3 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n EG=.5 TRS1=3m NBV=10 IKF=200m) .model Dpn D(IS=2p IKF=20000m BV=160 TT=50n EG=1.12 RS=.02 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL SBR2U30P1*TITLE: SBR2U30P1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Jan2012 *VERSION=2 *PIN 1=Anode 2=Cathode .MODEL SBR2U30P1 D( IS=60u RS=25m BV=32.0 IBV=150.0u CJO=951p M=0.333 N=1.14 TT=17.3n EG=.5 TRS1=3m NBV=10) * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * SBR3045CT*SRC=SBR3045CT;DI_SBR3045CT;Diodes;Si; 45.0V 30.0A 35.2ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3045CT D ( IS=2.03m RS=2.30m BV=45.0 IBV=500u + CJO=1.87n M=0.333 N=1.66 TT=50.7n ) SBR30A45CT*SRC=SBR30A45CT;DI_SBR30A45CT;Diodes;Si; 45.0V 30.0A 35.2ns Diodes Inc. SBR/ SKY .MODEL DI_SBR30A45CT D ( IS=120u RS=1.66m BV=45.0 IBV=500u + CJO=1.87n M=0.333 N=1.18 TT=50.7n ) SBR30U30CT*SRC=SBR30U30CT;DI_SBR30U30CT;Diodes;Si; 20.0V 30.0A 35.0ns Diodes INC Schottky rectifier .MODEL DI_SBR30U30CT D ( IS=580u RS=3.06m BV=20.0 IBV=230u + CJO=997p M=0.333 N=1.35 TT=50.4n SBR3150SB*TITLE: SBR3150SB *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=16Dec2014 *VERSION=1 .SUBCKT SBR3150SB 1 2 D1 1 2 Dsch D2 1 2 Dpn .MODEL Dsch D ( IS=11u RS=.22 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n EG=.47 TRS1=2m NBV=10 IKF=120m) .model Dpn D(IS=2p IKF=100 BV=160 TT=50n EG=1.1 RS=.011 ISR=1n) .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL SBR3A40SA*SRC=SBR3A40SA;DI_SBR3A40SA;Diodes;Si; 40.0V 3.00A 12.0ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3A40SA D ( IS=165u RS=18.5m BV=40.0 IBV=400u + CJO=57.0p M=0.333 N=1.26 TT=17.3n ) SBR3M30P1*SRC=SBR3M30P1;DI_SBR3M30P1;Diodes;Si; 30.0V 3.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR3M30P1 D ( IS=11.4u RS=10.6m BV=30.0 IBV=19.0u + CJO=865p M=0.333 N=1.13 TT=17.3n) SBR3U100LP*SRC=SBR3U100LP;DI_SBR3U100LP;Diodes;Si; 100V 3.00A 12.9ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3U100LP D ( IS=8.73n RS=34.4m BV=100 IBV=16.0u + CJO=141p M=0.333 N=0.700 TT=18.6n ) SBR3U150LP*SRC=SBR3U150LP;DI_SBR3U150LP;Diodes;Si; 150V 3.00A 11.5ns Diodes Inc. SBR/ SKY .MODEL DI_SBR3U150LP D ( IS=311u RS=22.4m BV=150 IBV=600n + CJO=178p M=0.333 N=2.78 TT=16.6n ) SBR3U20SA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=02/07/2009 *VERSION=3 *PIN_ORDER anode cathode * .SUBCKT SBR3U20SA 1 2 D1 1 3 Dmod R1 3 2 95 L1 3 2 1.8E-9 .MODEL Dmod D (IS=8E-5 N=1.1 ISR=5E-8 NR=1.0 BV=21 IBV=1E-3 NBV=5 + IBVL=2E-6 NBVL=500 RS=0.015 CJO=3500E-12 VJ=0.38 M=0.7 EG=0.5 XTI=2 + TRS1=0.003 TT=3e-9) .ENDS * *$ SBR3U30P1*SRC=SBR3U30P1;DI_SBR3U30P1;Diodes;Si; 30.0V 3.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR3U30P1 D ( IS=1.14m RS=11.7m BV=30.0 IBV=146u + CJO=951p M=0.333 N=1.71 TT=17.3n) SBR3U40P1*TITLE: SBR3U40P1 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1May2012 *VERSION=1 .MODEL SBR3U40P1 D( IS=20E-6 RS=35m BV=41.0 IBV=70u N=1 TT=10n EG=.53 TRS1=5m CJO=500p M=.6 VJ=.4) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL SBR3U60P1*SBR3U60P1 Spice Model v1.0 Last Revised 04/29/2014 Diodes Inc SUPER BARRIER RECTIFIER .MODEL DI_SBR3U60P1 D ( IS=1.638u RS=62.49m BV=66.00 IBV=10.00 + CJO=1.853n M=761.6m N=1.048 TT=10.00n EG=480.0m VJ=173.8m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBR40U300CTB*SBR40U300CTB Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR40U300CTB D ( IS=233.1n RS=16.34m BV=330.0 IBV=10.00 + CJO=1.055n M=487.5m N=1.424 TT=33.00n EG=480.0m VJ=504.9m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBR40U45CT*SRC=SBR40U45CT;DI_SBR40U45CT;Diodes;Si; 45.0V 40.0A 74.0ns Diodes INC Schottky rectifier .MODEL DI_SBR40U45CT D ( IS=30.5m RS=1.77m BV=45.0 IBV=250u + CJO=8.18n M=0.333 N=2.24 TT=107n SBR4U130LP.MODEL SBR4U130LP D ( + IS=15.568E-6 + N=1.031 + RS=20e-3 + IKF=257.62E-6 + CJO=5.0982E-9 + M=1.0812 + VJ=68.681E-3 + ISR=38.247E-9 + NR=4.9950 + BV=130.27 + IBV=100.00E-6 + XTI=2.89 ) SBR60A300CT*SBR60A300CT Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER RECTIFIER SIMULATOR=SPICE3 .MODEL DI_SBR60A300CT D ( IS=3.829u RS=25.27m BV=330.0 IBV=10.00 + CJO=1.006n M=557.8m N=1.413 TT=25.00n EG=480.0m VJ=826.8m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBR60A60CT*SRC=SBR60A60CT;DI_SBR60A60CT;Diodes;Si; 60.0V 60.0A 68.0ns Diodes INC Schottky rectifier .MODEL DI_SBR60A60CT D ( IS=1.44m RS=1.34m BV=60.0 IBV=70.0u + CJO=7.24n M=0.333 N=1.72 TT=97.9n ) SBR8U60P5*SRC=SBR8U60P5;;Diodes;Si; 60.0V 8.00A 25.0ns Diodes INC SBR rectifier .MODEL D ( IS=75.3u RS=20.1m BV=60.0 IBV=600u + CJO=13.3n M=0.333 N=1.10 TT=36.0n ) SBRT10M50SP5*SBRT10M50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT10M50SP5 D ( IS=29.37u RS=7.908m BV=55.00 IBV=10.00 + CJO=5.720n M=433.9m N=1.018 TT=36.10n EG=480.0m VJ=40.85m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT10U50SP5*SBRT10U50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT10U50SP5 D ( IS=47.29u RS=7.545m BV=55.00 IBV=10.00 + CJO=5.815n M=426.5m N=1.010 TT=38.20n EG=480.0m VJ=35.52m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT15U100SP5*SBRT15U100SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT15U100SP5 D ( IS=14.76u RS=19.00m BV=110.00 IBV=10.00 + CJO=10.76n M=519.9m N=1.023 TT=29.10n EG=480.0m VJ=14.89m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT20M60SP5*SBRT20M60SP5 Spice Model v1.0 Last Revised 05/23/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT20M60SP5 D ( IS=17.25u RS=7.887m BV=66.00 IBV=10.00 + CJO=14.41n M=526.0m N=1.019 TT=44.20n EG=480.0m VJ=21.52m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT20U50SLP*SBRT20U50SLP Spice Model v1.0 Last Revised 04/16/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER .MODEL DI_SBRT20U50SLP D ( IS=60.50u RS=6.029m BV=55.00 IBV=10.00 + CJO=13.00n M=473.3m N=1.017 TT=10.00n EG=480.0m VJ=20.19m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT20U60SP5*SBRT20U60SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT20U60SP5 D ( IS=53.48u RS=7.620m BV=66.00 IBV=10.00 + CJO=14.07n M=529.3m N=1.019 TT=43.20n EG=480.0m VJ=23.66m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT25M50SLP*SBRT25M50SLP Spice Model v1.0 Last Revised 05/20/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT25M50SLP D ( IS=21.40u RS=5.797m BV=55.00 IBV=10.00 + CJO=21.87n M=530.5m N=1.014 TT=59.50n EG=480.0m VJ=19.30m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT3M40SA*SBRT3M40SA Spice Model v1.0 Last Revised 04/21/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3M40SA D ( IS=8.986u RS=29.32m BV=45.00 IBV=10.00 + CJO=1.880n M=259.7m N=1.047 TT=10.00n EG=480.0m VJ=140.3u ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT3U40P1*SBRT3U40P1 Spice Model v1.0 Last Revised 05/28/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3U40P1 D ( IS=11.26u RS=31.17m BV=45.00 IBV=10.00 + CJO=2.602n M=426.4m N=1.031 TT=12.40n EG=480.0m VJ=6.740m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT3U45SA*SBRT3U45SA Spice Model v1.0 Last Revised 04/22/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT3U45SA D ( IS=16.77u RS=32.93m BV=50.50 IBV=10.00 + CJO=1.717n M=325.5m N=1.065 TT=10.00n EG=480.0m VJ=1.538m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT40V100CT*SBRT40V100CT Spice Model v1.0 Last Revised 05/14/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT40V100CT D ( IS=27.99u RS=16.00m BV=110.0 IBV=10.00 + CJO=11.96n M=452.9m N=1.016 TT=30.30n EG=480.0m VJ=3.448m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT5A50SA*SBRT5A50SA Spice Model v1.0 Last Revised 04/23/2014 Diodes Inc TRENCH SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT5A50SA D ( IS=11.30u RS=22.68m BV=56.00 IBV=10.00 + CJO=1.998n M=448.8m N=1.040 TT=10.00n EG=480.0m VJ=33.67m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT5A50SAF*SBRT5A50SAF Spice Model v1.0 Last Revised 04/11/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER .MODEL DI_SBRT5A50SAF D ( IS=16.70u RS=25.96m BV=61 IBV=10 + CJO=1.986n M=388.7m N=1.052 TT=10.00n EG=480.0m VJ=11.34m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SBRT60U100CT*SBRT60U100CT Spice Model v1.0 Last Revised 04/15/2014 Diodes Inc Trench SUPER BARRIER RECTIFIER *SIMULATOR=SPICE3 .MODEL DI_SBRT60U100CT D ( IS=25.99u RS=12.84m BV=110.0 IBV=10.00 + CJO=17.15n M=505.1m N=1.027 TT=44.60n EG=480.0m VJ=10.13m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SD101AW*SRC=SD101AW;DI_SD101AW;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101AW D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) SD101AWS******************************************************************************************************************************************* *SRC=SD101AWS;DI_SD101AWS;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky- SD101AWS/BWS/CWS .MODEL DI_SD101AWS D ( IS=230n RS=2.13 BV=60.0 IBV=200n + CJO=2.00p M=0.333 N=1.96 TT=1.44n ) ******************************************************************************************************************************************* SD101BW*SRC=SD101BW;DI_SD101BW;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BW D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) SD101BWS*SRC=SD101BWS;DI_SD101BWS;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BWS D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) SD101CW*SRC=SD101CW;DI_SD101CW;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CW D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) SD101CWS*SRC=SD101CWS;DI_SD101CWS;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CWS D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) SD103ASDM*SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, quad, one node of four .MODEL DI_SD103ASDM D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) SD103ATW*SRC=SD103ATW;DI_SD103ATW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, tripple, one node of three .MODEL DI_SD103ATW D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) SD103AW*SRC=SD103AW;DI_SD103AW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AW D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) SD103AWS*SRC=SD103AWS;DI_SD103AWS;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AWS D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) SD103BW*SRC=SD103BW;DI_SD103BW;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BW D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) SD103BWS*SRC=SD103BWS;DI_SD103BWS;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BWS D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) SD103CW*SRC=SD103CW;DI_SD103CW;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CW D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) SD103CWS*SRC=SD103CWS;DI_SD103CWS;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CWS D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) SD830*SRC=SD830;DI_SD830;Diodes;Si; 30.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD830 D ( IS=248u RS=5.25m BV=30.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) SD840*SRC=SD840;DI_SD840;Diodes;Si; 40.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD840 D ( IS=248u RS=5.25m BV=40.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) SD845*SRC=SD845;DI_SD845;Diodes;Si; 45.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD845 D ( IS=248u RS=5.25m BV=45.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) SD860*SRC=SD860;DI_SD860;Diodes;Si; 60.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD860 D ( IS=248u RS=5.25m BV=60.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) SDA006*SRC=SDA006;DI_SDA006;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Databus Transient Suppressor - Model is for one Diode Element .MODEL DI_SDA006 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) SDA006*SRC=SDA006;DI_SDA006;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Databus Transient Suppressor - Model is for one Diode Element .MODEL DI_SDA006 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) SDM03MT40*SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM03MT40 D ( IS=309u RS=0.210 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=6.81 TT=7.20n ) SDM03U40*SRC=SDM03U40;DI_SDM03U40;Diodes;Si; 30.0V 30.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SDM03U40 D ( IS=16.5u RS=2.20 BV=30.0 IBV=500n + CJO=2.59p M=0.333 N=2.92 TT=1.44n ) SDM100K30L*SRC=SDM100K30L;DI_SDM100K30L;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_SDM100K30L D ( IS=255n RS=0.108 BV=30.0 IBV=100u + CJO=53.4p M=0.333 N=0.927 TT=14.4n ) SDM10M45SD*SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10M45SD D ( IS=290n RS=0.420 BV=45.0 IBV=1.00u + CJO=10.6p M=0.333 N=1.28 TT=7.20n ) SDM10P45*SRC=SDM10P45;DI_SDM10P45;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10P45 D ( IS=745n RS=0.792 BV=45.0 IBV=1.00u + CJO=11.2p M=0.333 N=1.39 TT=7.20n ) SDM10U45*SRC=SDM10U45;DI_SDM10U45;Diodes;Si; 45.0V 0.100A 2.00ns Diodes Inc. SBR/ SKY .MODEL DI_SDM10U45 D ( IS=7.68u RS=1.32 BV=45.0 IBV=1.00u + CJO=13.3p M=0.333 N=1.81 TT=2.88n ) SDM10U45LP*SRC=SDM10U45LP;DI_SDM10U45LP;Diodes;Si; 40.0V 0.300A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10U45LP D ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u + CJO=10.6p M=0.333 N=2.45 TT=7.20n ) SDM1L30BLP*SDM1L30BLP Spice Model v1.0 Last Revised 04/10/2014 Diodes Inc Surface Mount Schottky Bridge .MODEL DI_SDM1L30BLP D ( IS=26.03u RS=46.51m BV=33 IBV=10 + CJO=516.8p M=443.9m N=1.030 TT=10.00n EG=480.0m VJ=396.1m ) * (c) 2014 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Taiwan Inc.7F.,No. 50,Min-Chuan Road,Hsin-Tien District,New Taipei City 23141, Taiwan SDM20E40C*SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si; 40.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20E40C D ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u + CJO=39.8p M=0.333 N=1.16 TT=7.20n ) SDM20N40A*SRC=SDM20N40A;DI_SDM20N40A;Diodes;Si; 40.0V 0.200A 5.00ns Diodes, Inc. Dual Schottky, Model for Single Schottky Only .MODEL DI_SDM20N40A D ( IS=34.0p RS=0.211 BV=40.0 IBV=15.0u + CJO=50.0p M=0.333 N=1.73 TT=7.20n SDM20U30*SRC=SDM20U30;DI_SDM20U30;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30 D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) SDM20U30LP*SRC=SDM20U30LP;DI_SDM20U30LP;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30LP D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) SDM20U40*SRC=SDM20U40;DI_SDM20U40;Diodes;Si; 40.0V 0.250A 10.0ns Diodes Inc. Schottky .MODEL DI_SDM20U40 D ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.70 TT=14.4n ) SDM40E20LC*SRC=SDM40E20LC;DI_SDM40E20LC;Diodes;Si; 20.0V 0.400A 10.0ns Diodes INC Schottky Diode .MODEL DI_SDM40E20LC D ( IS=2.83m RS=23.0m BV=20.0 IBV=250u + CJO=66.3p M=0.333 N=2.17 TT=14.4n SDM40E20LS*SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si; 20.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM40E20LS D ( IS=54.8u RS=0.132 BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.34 TT=7.20n ) SDM6CC*SRC=SDM6CC;DI_SDM6CC;Diodes;Si; 30.0V 0.200A 1.30ns Diodes INC Schottky Diode .MODEL DI_SDM6CC D ( IS=2.73u RS=0.653 BV=30.0 IBV=700n + CJO=5.30p M=0.333 N=1.98 SDMG0340L*SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. .MODEL DI_SBMG0340L D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) SDMG0340LA*SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LA D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) SDMG0340LC*SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LC D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) SDMG0340LS*SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LS D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) SDMK0340L*SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc. Schottky Barrier Diode .MODEL DI_SDMK0340L D ( IS=11.2u RS=3.64 BV=40.0 IBV=500n + CJO=2.65p M=0.333 N=2.69 TT=4.32u ) ****************************************************************************************************************************** SDMP0340LAT*SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LAT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** SDMP0340LCT*SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LCT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** SDMP0340LST*SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LST D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** SDMP0340LT*SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky .MODEL DI_SDMP0340LT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) SF10AG*SRC=SF10AG;DI_SF10AG;Diodes;Si; 50.0V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10AG D ( IS=1.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) SF10BG*SRC=SF10BG;DI_SF10BG;Diodes;Si; 100V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10BG D ( IS=1.42n RS=42.0m BV=100 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) SF10CG*SRC=SF10CG;DI_SF10CG;Diodes;Si; 150V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10CG D ( IS=1.42n RS=42.0m BV=150 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) SF10DG*SRC=SF10DG;DI_SF10DG;Diodes;Si; 200V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10DG D ( IS=1.42n RS=42.0m BV=200 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) SF10FG*SRC=SF10FG;DI_SF10FG;Diodes;Si; 300V 1.00A 40.0ns Diodes Inc. - .MODEL DI_SF10FG D ( IS=50.9p RS=75.5m BV=300 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=57.6n ) SF10GG*SRC=SF10GG;DI_SF10GG;Diodes;Si; 400V 1.00A 40.0ns Diodes Inc. - .MODEL DI_SF10GG D ( IS=50.9p RS=75.5m BV=400 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=57.6n ) SF10HG*SRC=SF10HG;DI_SF10HG;Diodes;Si; 500V 1.00A 50.0ns Diodes Inc. - .MODEL DI_SF10HG D ( IS=13.5u RS=30.9m BV=500 IBV=10.0u + CJO=92.5p M=0.333 N=5.40 TT=72.0n ) SF10JG*SRC=SF10JG;DI_SF10JG;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. - .MODEL DI_SF10JG D ( IS=13.5u RS=30.9m BV=600 IBV=10.0u + CJO=92.5p M=0.333 N=5.40 TT=72.0n ) SMAJ48A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=8/01/2014 *VERSION=1 .model SMAJ48A D(IS=.1u RS=0.078 CJO=1000p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=53 NBV=20 IBV=10u TT=40n EG=.84 TRS1=.1m) * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT SMAZ15*DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=18sep2013 *VERSION=1 .SUBCKT SMAZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.2 .MODEL DF D ( IS=2.51p RS=.0780 N=1.15 + CJO=100p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.8 N=1 ) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL SMBJ18A*DIODES_INC_SPICE_MODEL *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=23AUG2013 *VERSION=1 .SUBCKT SMBJ18A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 20 .MODEL DF D ( IS=10f RS=.5 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5f RS=.2 N=1.1 ) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * SMBJ33A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/01/2015 *VERSION=1 .model SMBJ33A D(IS=.1u RS=0.3 CJO=80000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=34.3 NBV=20 IBV=10u TT=4n EG=.84 TRS1=.1m) * (c) 2015 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT SMBJ40A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10NOV2010 *VERSION=1 * .SUBCKT SMCJ24A 7 1 *------connections-------Anode Cathode * L1 7 2 1.5E-9 *Forward D1 2 1 Dmod1 .MODEL Dmod1 D IS=1.5E-12 N=1.18 XTI=5 RS=0.04 CJO=620E-12 VJ=0.75 M=0.42 TT=4E-7 C1 1 2 50E-12 *Leakage RL 1 2 8E6 *Reverse RZ1 2 3 2 D2 4 3 Dmod2 .MODEL Dmod2 D IS=1E-15 N=0.5 RZ2 2 5 0.33 D3 6 5 Dmod2 EV1 1 4 16 18 1 EV2 1 6 16 18 1.07 IBV 0 16 0.001 RBV 16 0 Rmod2 47750 .MODEL Rmod2 RES TC1=8.3E-4 D4 18 0 Dmod2 IT 0 18 0.001 .ENDS SMCJ24A * *$ SMCJ24A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10NOV2010 *VERSION=1 * .SUBCKT SMCJ24A 7 1 *------connections-------Anode Cathode * L1 7 2 2E-9 *Forward D1 2 1 Dmod1 .MODEL Dmod1 D IS=4E-12 N=1.18 XTI=6 RS=0.012 CJO=2700E-12 VJ=0.6 M=0.45 TT=5.2E-7 C1 1 2 300E-12 *Leakage RL 1 2 5E6 *Reverse RZ1 2 3 0.14 D2 4 3 Dmod2 .MODEL Dmod2 D IS=1E-15 N=0.5 RZ2 2 5 0.055 D3 6 5 Dmod2 EV1 1 4 16 18 1 EV2 1 6 16 18 1.05 IBV 0 16 0.001 RBV 16 0 Rmod2 27700 .MODEL Rmod2 RES TC1=8.3E-4 D4 18 0 Dmod2 IT 0 18 0.001 .ENDS SMCJ24A * *$ SMCJ33A* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=30/01/2015 *VERSION=1 .model SMCJ33A D(IS=.1u RS=0.2 CJO=80000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m BV=34.3 NBV=20 IBV=10u TT=4n EG=.84 TRS1=.1m) * (c) 2015 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT SXTA42*ZETEX SXTA42 Spice Model v2.0 Last Revised 24/2/05 * .MODEL SXTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3 +VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7 +NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3 +RB =7 RE =0.07 RC =0.07 QUASIMOD=1 +CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12 +TF =1.1E-9 TR =0.9e-6 XTB=1.4 * *$ * UDZ5V1B*SRC=UDZ5V1B;UDZ5V1B;Diodes;Zener <=10V; 5.10V 0.200W DIODES INC Zener *SYM=HZEN .SUBCKT UDZ5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.20 .MODEL DF D ( IS=16.2p RS=25.3 N=1.10 + CJO=28.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=1.89 N=1.22 ) .ENDS UDZ5V1BF*SRC=UDZ5V1BF;UDZ5V1BF;Diodes;Zener <=10V; 5.09V 0.500W DIODES Zener *SYM=HZEN .SUBCKT UDZ5V1BF 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.66 .MODEL DF D ( IS=40.5p RS=1.92 N=1.10 + CJO=30.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.09f RS=64.5 N=3.00 ) .ENDS UF1001*SRC=UF1001;DI_UF1001;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1001 D ( IS=125u RS=17.5m BV=50.0 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) UF1002*SRC=UF1002;DI_UF1002;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1002 D ( IS=125u RS=17.5m BV=100 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) UF1003*SRC=UF1003;DI_UF1003;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1003 D ( IS=125u RS=17.5m BV=200 IBV=5.00u + CJO=79.6p M=0.333 N=3.75 TT=72.0n ) UF1004*SRC=UF1004;DI_UF1004;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1004 D ( IS=38.7u RS=15.4m BV=400 IBV=5.00u + CJO=79.6p M=0.333 N=4.17 TT=72.0n ) UF1005*SRC=UF1005;DI_UF1005;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1005 D ( IS=13.9u RS=56.6m BV=600 IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) UF1006*SRC=UF1006;DI_UF1006;Diodes;Si; 800V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1006 D ( IS=13.9u RS=56.6m BV=800 IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) UF1007*SRC=UF1007;DI_UF1007;Diodes;Si; 1.00kV 1.00A 50.0ns Diodes Inc. 1.0A Ultra-Fast Rectifier .MODEL DI_UF1007 D ( IS=13.9u RS=56.6m BV=1.00k IBV=5.00u + CJO=46.4p M=0.333 N=4.11 TT=72.0n ) UF3001*SRC=UF3001;DI_UF3001;Diodes;Si; 50.0V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3001 D ( IS=70.7u RS=43.0u BV=50.0 IBV=10.0u + CJO=139p M=0.333 N=4.27 TT=72.0n ) UF3002*SRC=UF3002;DI_UF3002;Diodes;Si; 100V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3002 D ( IS=70.7u RS=43.0u BV=100 IBV=5.00u + CJO=139p M=0.333 N=4.27 TT=72.0n ) UF3003*SRC=UF3003;DI_UF3003;Diodes;Si; 200V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3003 D ( IS=70.7u RS=43.0u BV=200 IBV=5.00u + CJO=139p M=0.333 N=4.27 TT=72.0n ) UF3004*SRC=UF3004;DI_UF3004;Diodes;Si; 400V 3.00A 50.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL DI_UF3004 D ( IS=9.58u RS=15.4m BV=400 IBV=5.00u + CJO=139p M=0.333 N=3.45 TT=72.0n ) UF3005*SRC=UF3005;DI_UF3005;Diodes;Si; 600V 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3005 D ( IS=4.50u RS=14.1m BV=600 IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) UF3006*SRC=UF3006;DI_UF3006;Diodes;Si; 800V 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3006 D ( IS=4.50u RS=14.1m BV=800 IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) UF3007*SRC=UF3007;Di_UF3007;Diodes;Si; 1.00kV 3.00A 75.0ns Diodes Inc. Ultra-Fast Rectifier .MODEL Di_UF3007 D ( IS=4.50u RS=14.1m BV=1.00k IBV=10.0u + CJO=92.5p M=0.333 N=4.29 TT=108n ) US1A*SRC=US1A;DI_US1A;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1A D ( IS=667n RS=72.0m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) US1B*SRC=US1B;DI_US1B;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1B D ( IS=667n RS=72.0m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) US1D*SRC=US1D;DI_US1D;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1D D ( IS=667n RS=72.0m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) US1G*SRC=US1G;DI_US1G;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. .MODEL DI_US1G D ( IS=540p RS=0.116 BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=1.70 TT=72.0n ) US1J*SRC=US1J;DI_US1J;Diodes;Si; 600V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1J D ( IS=709n RS=82.3m BV=600 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) US1K*SRC=US1K;DI_US1K;Diodes;Si; 800V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1K D ( IS=709n RS=82.3m BV=800 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) US1M*SRC=US1M;DI_US1M;Diodes;Si; 1.00kV 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1M D ( IS=709n RS=82.3m BV=1.00k IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) VN10LF*ZETEX VN10LF Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT VN10LF 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS VN10LF * *$ * ZDT1048* *Zetex ZDT1048 Spice Model v1.0 Last Revised 12/09/08 * .SUBCKT ZDT1048 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 + CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299 + VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9 * .ENDS ZDT1048 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZDT1049* *Zetex ZDT1049 Spice Model v1.0 Last Revised 12/09/08 * .SUBCKT ZDT1049 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36 + VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9 * .ENDS ZDT1049 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZDT1053.SUBCKT ZDT1053 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * .ENDS ZDT1053 * *$ ZDT6702* .SUBCKT ZDT6702 1 2 3 4 5 6 7 8 * pins E2, B2, E1, B1, C1, C1, C2, C2 * Q11 12 4 11 SUB603 Q12 12 11 3 SUB603 3.46 Q21 10 2 9 SUB702 Q22 10 9 1 SUB702 3.46 R1 5 12 0.001 R2 6 12 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13 + NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3 + RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9 + XTB=1.5 * .MODEL SUB702 PNP IS =.5E-13 BF =103 VAF=200 NF =1 IKF=.55 + ISE=.75E-14 NE =1.5 BR =15 VAR=30 NR =1 IKR=.45 ISC=3E-13 + NC=1.2 RB=0.3 RE=0.3 RC=0.3 CJE=140E-12 CJC=20E-12 + VJC=0.85 MJC=0.41 TF=1E-9 TR=290E-9 XTB=1.4 * .ENDS ZDT6702 * *$ ZDT6718* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E2 8=C2 * 2=B2 7=C2 * 3=E1 6=C1 * 4=B1 5=C1 * .SUBCKT ZDT6718 1 2 3 4 5 6 7 8 Q1 11 4 3 Nmod Q2 12 2 1 Pmod RP1 11 5 0.001 RP2 11 6 0.001 RP3 12 7 0.001 RP4 12 8 0.001 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .ENDS * *$ ZDT6753* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E2 8=C2 * 2=B2 7=C2 * 3=E1 6=C1 * 4=B1 5=C1 * .SUBCKT ZDT6753 1 2 3 4 5 6 7 8 Q1 11 4 3 Nmod Q2 12 2 1 Pmod RP1 11 5 0.001 RP2 11 6 0.001 RP3 12 7 0.001 RP4 12 8 0.001 * .MODEL Nmod NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 + ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 + CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 + TF =0.78E-9 TR =30E-9 .MODEL Pmod PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76 + ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 + ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 + CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 + TF =0.86E-9 TR =24E-9 .ENDS * *$ ZDT6790* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E2 8=C2 * 2=B2 7=C2 * 3=E1 6=C1 * 4=B1 5=C1 * .SUBCKT ZDT6790 1 2 3 4 5 6 7 8 Q1 11 4 3 Nmod Q2 12 2 1 Pmod RP1 11 5 0.001 RP2 11 6 0.001 RP3 12 7 0.001 RP4 12 8 0.001 * .MODEL Nmod NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 + NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 + CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 + TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 + TRC1=0.002 .MODEL Pmod PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 + VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 + ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 + MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 + TRE1=.0025 TRB1=.0025 TRC1=.0025 .ENDS * *$ ZDT694* .SUBCKT ZDT694 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 NPN IS=1.59E-12 NF=1.001 BF=1009 IKF=0.26 VAF=45 + ISE=.253E-12 NE=1.445 NR=1 BR=40 IKR=1 VAR=30 ISC=0.326E-12 + NC=1.075 RB=0.2 RE=0.065 RC=0.075 CJC=35.5E-12 MJC=.465 + VJC=.515 CJE=258E-12 TF=.763E-9 TR=130E-9 * .ENDS ZDT694 ZDT749* *Zetex ZDT749 Spice Model v1.0 Last Revised 12/09/08 * .SUBCKT ZDT749 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 PNP IS=2.6E-13 BF=210 VAF=27 IKF=7 ISE=1.2E-13 NE=1.43 BR=70 + VAR=14 IKR=.6 ISC=12.04E-13 NC=1.4474 NF=.999 NR=.982 RB=.3 RE=.065 + RC=.04 CJE=410E-12 TF=.65E-9 CJC=140E-12 TR=12E-9 MJC=.35 VJC=.305 * .ENDS ZDT749 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZDT751.SUBCKT ZDT751 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13 + NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07 + RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705 + MJC=.46 * .ENDS ZDT751 * *$ ZDT795A.SUBCKT ZDT795A 1 2 3 4 5 6 7 8 * E2 B2 E1 B1 C1 C1 C2 C2 Q1 9 4 3 Mod1 Q2 10 2 1 Mod1 R1 5 9 0.001 R2 6 9 0.001 R3 7 10 0.001 R4 8 10 0.001 * .MODEL Mod1 PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14 + NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45 + RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 + TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=4.3 GAMMA=0.5E-7 * .ENDS ZDT795A ZHCS1000*ZETEX ZHCS1000 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS1000 D IS=1.6e-7 N=.59 RS=137e-3 IKF=2.5e-3 XTI=2 +EG=.58 CJO=184.9p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=4E-6 NR=1.8 * *$ * ZHCS2000*ZETEX ZHCS2000 Spice Model v1.0 Last Revised 22/10/03 * .MODEL ZHCS2000 D IS=5e-7 N=.59 RS=88e-3 IKF=5e-3 XTI=2 +EG=.58 CJO=370p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 +ISR=10E-6 NR=1.8 * *$ * ZHCS350*ZETEX ZHCS350 Spice Model v1.0 Last Revised 26/04/2005 * .MODEL ZHCS350 D IS=1.35e-7 N=1.06 ISR=6e-7 NR=1.1 RS=0.9 +IKF=0.2 BV=65 TRS1=6.5e-3 XTI=2 EG=0.63 Fc=0.5 CJO=18.84e-12 +M=0.5 VJ=0.33 TT=1.6e-9 * *$ * ZHCS400*ZETEX ZHCS400 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS400 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * ZHCS500*ZETEX ZHCS500 Spice Model v1.0 Last Revised 22/05/02 * .MODEL ZHCS500 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2 +EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6 +ISR=2.2E-6 NR=1.8 * *$ * ZHCS750*ZETEX ZHCS750 Spice Model v1.0 Last Revised 23/9/97 * .MODEL ZHCS750 D IS=7E-6 N=.99 RS=130E-3 IKF=.15 XTI=2 EG=.58 + CJO=184.9p M=.523 VJ=.3905 Fc=.5 BV=60 IBV=300E-6 + ISR=4E-6 NR=1.8 * *$ * ZHT431*ZETEX ZHT431 Spice Model v1.0 Last Revised 22/7/2005 * *NOTE: This is a simplified Model. Do not rely on this Model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions with additional load capacitance. *Check stability by normal breadboarding techniques. * .SUBCKT ZHT431 1 2 3 *Connections Vz Vref Gnd *Input current L2 2 12 2E-9 Rin 12 13 Rmod1 20E6 Cin 12 13 1E-12 D1 13 12 Dmod D2 12 11 Dmod *Reference voltage, Voltage dependence Iref 13 21 2.4985E-3 Rref 21 13 Rmod2 1000 G1 21 13 11 13 1.43E-6 *Gain, time constant and clamp voltage G2 13 31 12 21 0.004 Rt1 31 13 1E8 Ct1 31 32 800E-12 Rt2 32 13 2000 Ct2 31 33 50E-12 Rt3 33 13 5 D3 31 13 Dmod D4 13 31 Dmod *Buffer,Output G3 13 41 13 31 0.22 L1 1 11 2E-9 Rz 11 42 10 D5 42 41 Dmod D6 13 41 Dmod D7 13 11 Dmod Rx 13 23 0.5 L3 3 23 2E-9 Rq 11 13 Rmod3 74E3 * .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=8.5E-6 TC2=-3.3E-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Dmod D IS=1E-14 RS=0.1 BV=22 CJO=0.1E-12 .ENDS ZHT431 * *$ * ZLLS1000*ZETEX ZLLS1000 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS1000 D IS=1.35E-6 N=1.03 ISR=3.3E-6 NR=2 IKF=0.65 BV=56 IBV=5E-4 +RS=0.14 TT=4E-9 CJO=115E-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4E-3 * *$ * ZLLS2000*ZETEX ZLLS2000 Spice Model v2.0 Last revision 25/05/2007 * *This simple model has limitations with respect to temperature *for best fit of forward characteristitics with temperature EG=0.63 *for best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS2000 D IS=2.7e-6 N=1.03 ISR=4.5E-6 NR=2 IKF=1.3 BV=56 IBV=1E-3 +RS=0.07 TT=6e-9 CJO=265e-12 VJ=0.6 M=0.34 EG=0.63 XTI=2 TRS1=4e-3 * *$ * ZLLS350*ZETEX ZLLS350 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS350 D IS=14E-8 N=1.03 ISR=9E-8 NR=2 IKF=0.043 BV=56 IBV=1E-4 +RS=1.2 TT=1e-9 CJO=13.5E-12 VJ=0.6 M=0.33 EG=0.63 XTI=2 TRS1=4E-3 * *$ * ZLLS400*ZETEX ZLLS400 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS400 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ * ZLLS410*ZETEX ZLLS410 Spice Model v1.0 Last Revised 25/05/07 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.75 * .MODEL ZLLS410 D IS=1.3e-6 N=1.03 ISR=4E-7 NR=2 IKF=0.15 BV=36 IBV=200E-6 +NBV=1 RS=0.1 TT=2e-9 CJO=81e-12 VJ=0.6 M=0.39 EG=0.63 XTI=2 TRS1=4E-3 * *$ * ZLLS500*ZETEX ZLLS500 Spice Model v2.0 Last revision 24/05/2007 * *This simple model has limitations with respect to temperature *best fit of forward characteristitics with temperature EG=0.63 *best fit of reverse characteristitics with temperature EG=0.85 * .MODEL ZLLS500 D IS=6.1e-7 N=1.03 ISR=1.4E-6 NR=2 IKF=0.32 BV=42 IBV=2E-4 +RS=0.27 TT=3e-9 CJO=71e-12 VJ=0.6 M=0.36 EG=0.63 XTI=2 TRS1=4e-3 * *$ * ZMR500*ZETEX ZMR500 Spice Model v1.0 Last revision 31/01/07 * .SUBCKT ZMR500 1 2 3 * Connections IN_GND_OUT Q1 12 5 6 Qmod1 R1 4 2 Rmod1 1 R2 6 7 0.04 R4 10 2 15E3 R5 6 8 1E6 R6 5 6 1E6 D1 1 11 Dmod1 D2 11 12 Dmod1 R8 7 2 Rmod3 100E3 C4 8 10 130E-12 I1 2 4 5.001 G1 5 7 8 4 1 G2 2 4 1 2 5E-4 VS 3 7 0 F1 2 4 VS 0.5 .MODEL Qmod1 NPN (RC=10 RB=10 RE=10 CJC=2p CJE=5p) .MODEL Dmod1 D (IS=0.8E-15) .MODEL Rmod1 RES (TC1=-3.9E-5 TC2=-6.1E-7) .MODEL Rmod3 RES (TC1=-5E-4 TC2=0E-7) .ENDS ZMR500 * *$ * ZR431*ZETEX ZR431 Spice Model v1.0 Last Revised 31/3/2005 * *NOTE: This is a simplified Model. Do not rely on this Model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions with additional load capacitance. *Check stability by normal breadboarding techniques. * .SUBCKT ZR431 1 2 3 *Connections Vz Vref Gnd *Input current L2 2 12 2E-9 Rin 12 13 Rmod1 20E6 Cin 12 13 1E-12 D1 13 12 Dmod D2 12 11 Dmod *Reference voltage, Voltage dependence Iref 13 21 2.4985E-3 Rref 21 13 Rmod2 1000 G1 21 13 11 13 1.43E-6 *Gain, time constant and clamp voltage G2 13 31 12 21 0.004 Rt1 31 13 1E8 Ct1 31 32 800E-12 Rt2 32 13 2000 Ct2 31 33 50E-12 Rt3 33 13 5 D3 31 13 Dmod D4 13 31 Dmod *Buffer,Output G3 13 41 13 31 0.22 L1 1 11 2E-9 Rz 11 42 10 D5 42 41 Dmod D6 13 41 Dmod D7 13 11 Dmod Rx 13 23 0.5 L3 3 23 2E-9 Rq 11 13 Rmod3 74E3 * .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=8.5E-6 TC2=-3.3E-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Dmod D IS=1E-14 RS=0.1 BV=22 CJO=0.1E-12 .ENDS ZR431 * *$ * ZR431L*ZETEX ZR431L Spice Model v1.0 Last Revised 21/10/05 * *NOTE: This is a simplified model. Do not rely on this model for *validation of circuit stability. It does not accurately replicate *stability boundary conditions when the device is operated with *additional load capacitance. Check the circuit stability by normal *breadboarding techniques. * .SUBCKT ZR431L 1 2 3 *Connections Vz Vref Gnd * *Input current Rin 2 3 Rmod1 1.127E7 D1 3 2 Dmod1 D2 2 1 Dmod1 Cin 2 3 10E-12 * *Quiescent current E1 50 3 2 3 1 D8 50 51 Dmod1 Rq 51 52 Rmod4 31E3 Vq 52 3 0 F1 1 3 Vq 1 Ro 1 3 1.5E6 * *Reference voltage Iref 3 21 1.2405E-3 Rref 21 3 Rmod2 1000 * *Voltage dependence G1 21 3 POLY(1) 1 3 0 1.57E-6 -0.97e-7 * *Gain G2 3 31 2 21 1e-7 Rt2 3 31 100E6 Rt3 3 32 3E6 Ct1 31 32 3E-13 D3 31 3 Dmod1 D4 3 31 Dmod1 * *Output *Q1 5 42 3 Qmod1 Cr1 7 31 1.5e-14 G3 41 3 31 3 0.8 Rc1 6 7 5 Rc2 7 5 5 D6 3 41 Dmod1 D7 3 1 Dmod1 L1 1 6 10nH D9 5 41 Dmod2 * .MODEL Qmod1 NPN BF=220 CJC=3E-12 CJE=3E-12 .MODEL Rmod1 RES (TC1=2.95E-3 TC2=-5E-7) .MODEL Rmod2 RES (TC1=1.5e-5 TC2=-3.5e-7) .MODEL Rmod3 RES (TC1=-2.5E-3 TC2=2E-5) .MODEL Rmod4 RES (TC1=1.7E-3 TC2=0) .MODEL Dmod1 D IS=5E-15 RS=4 BV=22 .MODEL Dmod2 D IS=1E-18 RS=.01 .ENDS ZR431L * *$ * ZRC250*ZETEX ZRC250 Spice Model v1.0 Last Revised 11/07/06 * *NOTE: This is a simplified model. Confirm *any design using a physical circuit. * .SUBCKT ZRC250 1 3 *Connections Vz Gnd * *Quiescent current R1 1 49 320E3 R2 49 3 315.2E3 C1 49 1 4.5e-12 E1 50 3 49 3 1 D8 50 51 Dmod1 Rq 51 52 Rmod2 70E3 Vq 52 3 0 F1 1 3 Vq 1 * *Reference voltage Iref 3 21 1.2405E-3 Rref 21 3 Rmod1 1000 * *Gain G2 3 31 49 21 1e-7 Rt2 3 31 100E6 Rt3 3 32 3E6 Ct1 31 32 1.5E-13 D3 31 3 Dmod1 D4 3 31 Dmod1 * *Output G3 41 3 31 3 0.3 Rc1 6 5 10 D6 3 41 Dmod1 D7 3 6 Dmod1 L1 1 6 10nH D9 5 41 Dmod2 * .MODEL Qmod1 NPN BF=220 CJC=3E-12 CJE=3E-12 .MODEL Rmod1 RES (TC1=3.8e-5 TC2=-1e-7) .MODEL Rmod2 RES (TC1=1.7E-3 TC2=0) .MODEL Dmod1 D IS=5E-15 RS=4 BV=22 .MODEL Dmod2 D IS=1E-18 RS=.01 .ENDS ZRC250 * *$ * ZTX1048A*ZETEX ZTX1048A Spice Model v1.0 Last Revised 20/01/95 * .MODEL ZTX1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 + CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299 + VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9 * *$ * ZTX1049A*ZETEX ZTX1049A Spice Model v1.0 Last Revised 15/6/95 * .MODEL ZTX1049A NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36 + VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9 * *$ * ZTX1051A*ZETEX ZTX1051A Spice Model v1.0 Last Revised 16/12/94 * .MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * *$ * ZTX1053A*ZETEX ZTX1053A Spice Model v1.0 Last Revised 19/01/95 * .MODEL ZTX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * ZTX1147A*ZETEX ZTX1147A Spice Model v1.0 Last Revised 10/12/96 * .MODEL ZTX1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65 BF=500 + VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6 BR=90 VAR=3.1 + IKR=1.2 RE=15e-3 RB=145e-3 RC=13e-3 CJE=560e-12 + CJC=255e-12 VJC=0.6288 MJC=0.4048 TF=1.2e-9 TR=13e-9 * *$ * ZTX1149A*ZETEX ZTX1149A Spice Model v1.0 Last Revised 10/1/97 * .MODEL ZTX1149A PNP IS=9.5e-13 NF=1.002 ISE=1.2e-13 NE=1.4 BF=520 + VAF=24.97 IKF=5 NR=0.997 ISC=4.5E-13 NC=1.25 BR=40 + VAR=2.51 IKR=0.7 RE=20e-3 RB=150e-3 RC=10e-3 + CJE=490e-12 CJC=150e-12 VJC=1.094 MJC=0.4739 + TF=1e-9 TR=3.5e-9 * *$ * ZTX415*ZETEX ZTX415 Spice Model v1.0 Last Revised 14/01/03 * .SUBCKT ZTX415 16 15 14 *Pins______________C__B__E Q_Q1 9 8 7 QMOD_1 R_R1 5 6 100 R_R2 5 4 100 R_R3 12 3 100 R_R4 3 1 500 R_R5 10 2 2k R_R6 10 11 2 D_D1 10 5 DZ20 D_D2 4 2 DZ500 D_D3 10 3 DZ200 D_D4 1 2 DZ500 D_D5 7 9 DZ300 C_C1 10 2 20p S_S1 13 11 2 10 SMOD1 S_S2 9 13 2 10 SMOD2 S_S3 8 10 2 10 SMOD3 V_H1 7 10 0 H1 6 10 V_H1 50 E1 12 10 11 10 10 L_L1 9 16 1nH L_L2 15 8 2nH L_L3 10 14 2nH .Model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4 +VAF=1900 ISE=1E-12 NE =1.6 +NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9 +RB =0.4 RE =0.1 RC =0.1 +CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12 +TF =1.3E-9 TR =2.3e-7 .Model DZ20 D Is=1E-15 Bv=20 Ibv=100u .Model DZ200 D Is=1E-15 Bv=200 Ibv=100u .Model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u .Model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u .Model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6 .Model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9 .Model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25 .ENDS ZTX415 * *$ * ZTX449*ZETEX ZTX449 Spice Model v1.0 Last Revised 11/11/04 * .MODEL ZTX449 NPN IS =1.04E-13 BF =195 IKF =1.9 VAF =160 + ISE=1.83E-14 NE =1.35 NR =1.00 BR =140 IKR=0.5 + VAR=30 ISC=6.00E-12 NC =1.5 RB =0.3 RE =0.065 + RC =0.11 CJC=25.37E-12 MJC=0.3281 VJC=0.464 + CJE=122E-12 MJE=0.3412 VJE=0.7631 TF =0.86E-9 + TR =12.5E-9 * *$ * ZTX450*ZETEX ZTX450 Spice Model v1.0 Last Revised 1/4/90 * .MODEL ZTX450 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8 +ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13 +NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12 +TR =85E-9 VJC=.505 MJC=.39 * *$ * ZTX453.MODEL ZTX453 NPN IS=3.8E-14 NF=1.008 BF=150 IKF=2 VAF=300 XTB=1.4 + ISE=1E-14 NE=1.22 NR=1.015 BR=6 IKR=1.8 VAR=48 ISC=5E-13 NC=1.2 + RB=1 RE=0.155 RC=0.061 CJC=18E-12 MJC=0.31 VJC=0.45 CJE=65E-12 + MJE=0.34 VJE=0.7 TF=8E-10 TR=6E-7 QUASIMOD=1 RCO=17 GAMMA=1E-7 VO=20 * *$ ZTX455* .MODEL ZTX455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14 +NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1 +RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505 +MJC=.455 * * ZTX457*ZETEX ZTX457 Spice Model v2.0 Last Revised 24/2/05 * .MODEL ZTX457 NPN IS =5E-14 NF =1 +BF =250 IKF=500E-3 VAF=1020 ISE=2.5E-14 NE =1.38 +RCO=60 GAMMA=10E-7 NR =1 BR =5 IKR=0 VAR=55 ISC=5e-12 +NC =1.31 RB =3 RE =0.05 RC =0.05 QUASIMOD=1 +CJC=10.95E-12 MJC=0.265 VJC=0.3905 CJE=125.2E-12 +TF =0.6E-9 TR =0.66e-6 XTB=1.4 * *$ * ZTX458*ZETEX ZTX458 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL ZTX458 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500 + ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12 + NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7 + CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8 + TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4 * *$ * ZTX549*ZETEX ZTX549 Spice Model v1.0 Last Revised 11/10/94 * .MODEL ZTX549 PNP IS =1.3E-13 BF =200 IKF=1.8 VAF=104 + ISE=6E-14 NE =1.45 BR =50 IKR=0.2 VAR=8 + ISC=3.5E-14 NC =1.23 RB =0.7 RE =0.063 RC =0.122 + CJC=55E-12 MJC=0.3541 VJC=0.1928 CJE=120.9E-12 + MJE=.4685 VJE=1.041 TF =0.51E-9 TR =3.6E-9 * *$ * ZTX550*ZETEX ZTX550 Spice Model v1.0 Last Revised 24/7/01 * .MODEL ZTX550 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * ZTX551*ZETEX ZTX551 Spice Model v1.0 Last Revised 6/1/03 * .MODEL ZTX551 PNP IS =3.2E-14 BF =120 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =35 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * ZTX553*ZETEX ZTX553 Spice Model v1.0 Last Revised 16/12/05 * .MODEL ZTX553 PNP IS =2E-13 NF =1 BF =200 IKF=0.8 +VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9 +NR =1 BR =15 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25 +RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1 +CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12 +TF =0.8E-9 TR =70e-9 XTB=1.4 * *$ * ZTX558*ZETEX ZTX558 Spice Model v3.0 Last Revised 20/09/2007 * .MODEL ZTX558 PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ * ZTX560*ZETEX ZTX560 Spice Model v2.0 Last Revised 24/2/05 * .MODEL ZTX560 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54 +RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3 +RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12 +MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1 * *$ * ZTX601*ZETEX ZTX601 Spice Model v1.0 Last Revised 23/12/04 * .SUBCKT ZTX601 1 2 3 * C B E Q1 1 2 4 SUB601 Q2 1 4 3 SUB601 2.74 * .MODEL SUB601 NPN IS=8.354E-14 BF=70 VAF=18.3 IKF=0.25 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 +MJC=0.3607 TF=1E-9 TR=1800E-9 .ENDS ZTX601 * *$ * ZTX601B*ZETEX ZTX601B Spice Model v1.0 Last Revised 9/5/94 * .SUBCKT ZTX601B 1 2 3 * C B E Q1 1 2 4 SUB601B Q2 1 4 3 SUB601B 2.74 * .MODEL SUB601B NPN IS=8.354E-14 BF=130 VAF=18.3 IKF=0.2 ISE=2E-13 +NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25 +RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 MJC=0.3607 +TF=1E-9 TR=1800E-9 .ENDS ZTX601B * *$ * ZTX603*ZETEX ZTX603 Spice Model v1.0 Last Revised 1/7/03 * .SUBCKT ZTX603 1 2 3 * C B E Q1 1 2 4 SUB603 Q2 1 4 3 SUB603 3.46 * .MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13 +NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3 +RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9 +XTB=1.5 .ENDS * *$ * ZTX605*ZETEX ZTX605 Spice Model v1.0 Last Revised 24/6/93 * .SUBCKT ZTX605 1 2 3 * C B E Q1 1 2 4 SUB605 Q2 1 4 3 SUB605 3.46 * .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS ZTX605 * *$ * ZTX614*ZETEX ZTX614 Spice Model v1.0 Last Revised 17/12/92 * .SUBCKT ZTX614 1 2 3 * C B E Q1 1 2 4 SUB614 Q2 1 4 3 SUB614 5.39 .ENDS ZTX614 * .MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284 + ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2 + VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375 + RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127 + CJE=23.7E-12 TF =1.73E-9 TR =260E-9 * *$ * ZTX618*ZETEX ZTX618 Spice Model v1.0 Last Revised 8/7/93 * .MODEL ZTX618 NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * *$ * ZTX649*ZETEX ZTX649 Spice Model v1.0 Last Revised 17/7/90 * .MODEL ZTX649 NPN IS =3E-13 BF =225 VAF=80 IKF=2.8 ISE=1.1E-13 NE =1.37 +BR =110 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.3 RE =.063 +RC =.07 CJE=325E-12 TF =1E-9 CJC=70E-12 TR =10E-9 * *$ * ZTX651*ZETEX ZTX651 Spice Model v1.0 Last Revised 16/1/91 * .MODEL ZTX651 NPN IS =2.218E-13 NF =.9956 BF =230 IKF=2 VAF=100 ISE=2.9E-14 +NE =1.35 NR =.995 BR =56 IKR=1 VAR=30 ISC=2.971E-13 NC =1.321 RB =.04 +RE =.075 RC =.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF =.77E-9 +TR =27E-9 * *$ * ZTX653*ZETEX ZTX653 Spice Model v1.0 Last Revised 18/5/93 * .MODEL ZTX653 NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154 + ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38 + ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06 + CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12 + TF =0.78E-9 TR =30E-9 * *$ * ZTX657*ZETEX ZTX657 Spice Model v1.0 Last Revised 27/7/05 * .MODEL ZTX657 NPN IS=2.3E-13 NF=1.003 BF=150 IKF=1.35 +VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE =1.33 NR=1.001 +BR=8 VAR=43 ISC=1.8E-13 NC=1.19 RC=0.085 RB =0.35 RE =0.2 +CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7 +XTB=1.4 QUASIMOD=1 * *$ * ZTX658*ZETEX ZTX658 Spice Model v2.0 Last Revised 21/1/05 * .MODEL ZTX658 NPN IS=1.3E-13 NF=1.0025 BF=150 IKF=0.7 VAF=154 +ISE=0.7E-13 NE=1.4 NR=1.0012 BR=8 IKR=0.42 VAR=48 +ISC=3E-13 NC=1.3 RB=0.04 RE=0.0875 RC=0.05 +CJC=24.77E-12 MJC=0.322 VJC=0.432 CJE=354E-12 MJE=0.36 +VJE=0.824 TF=0.62E-9 TR=700E-9 XTB=1.55 +QUASIMOD=1 RCO=38 GAMMA=20E-8 * *$ * ZTX688B*ZETEX ZTX688B Spice Model v1.0 Last Revised 8/11/90 * .MODEL ZTX688B NPN IS =1.09E-12 NF =0.9935 BF =1180 IKF=5.2 VAF=25 +ISE=1.3E-13 NE =1.35 NR =0.992 BR =790 IKR=.5 VAR=5 ISC=0.174E-12 +NC =1.399 RB =.3 RE =.036 RC =.034 CJC=104E-12 MJC=.29 VJC=.46 +CJE=280E-12 TF =.93E-9 TR =1.05E-9 * *$ * ZTX689B*ZETEX ZTX689B Spice Model v1.0 Last Revised 12/10/04 * .MODEL ZTX689B NPN IS =1.8E-12 NF =0.994 BF =1500 IKF=3.2 VAF=24 +ISE=.218E-12 NE =1.345 NR =0.996 BR =310 IKR=.8 VAR=4 ISC=0.36E-12 +NC =1.26 RB =.2 RE =.035 RC =.036 CJC=74E-12 MJC=.35 VJC=.485 +CJE=248E-12 TF =0.72E-9 TR =4.9E-9 XTB=1.13 TRE1=4E-3 ITF=5e-3 * *$ * ZTX690B*ZETEX ZTX690B Spice Model v2.0 Last revision 12/07/07 * .MODEL ZTX690B NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * ZTX692B*ZETEX ZTX692B Spice Model v1.0 Last Revised 31/10/90 * .MODEL ZTX692B NPN IS =1.87E-12 NF =.9983 BF =1400 IKF=0.73 VAF=29 +ISE=.21E-12 NE =1.378 NR =.997 BR =68 IKR=.55 VAR=12 ISC=.44E-12 +NC =1.14 RB =.2 RE =.05 RC =.048 CJC=42.5E-12 MJC=.475 VJC=.625 +CJE=233E-12 TF =.77E-9 TR =39E-9 *Note: This Model may be inaccurate for collector currents above 1.5A. * *$ * ZTX694B*ZETEX ZTX694B Spice Model v1.0 Last Revised 1/11/90 * .MODEL ZTX694B NPN IS =1.59E-12 NF =1.001 BF =1009 IKF=0.26 VAF=45 +ISE=.253E-12 NE =1.445 NR =1 BR =40 IKR=1 VAR=30 ISC=0.326E-12 +NC =1.075 RB =0.2 RE =0.065 RC =0.075 CJC=35.5E-12 MJC=.465 +VJC=.515 CJE=258E-12 TF =.763E-9 TR =130E-9 *Note: This Model may be inaccurate for collector currents above 0.6A. * *$ * ZTX696B*ZETEX ZTX696B Spice Model v2.0 Last Revised 25/1/05 * .MODEL ZTX696B NPN IS =.98476E-12 NF =.999 BF =705 IKF=0.8 VAF=235 +ISE=8.1E-14 NE =1.36 NR =1.002 BR =20 IKR=.8 VAR=26 ISC=.66E-12 +NC =1.15 RB =.07 RE =.125 RC =.098 CJC=25.4E-12 MJC=.47 VJC=.445 +CJE=270E-12 TF =1.301E-9 TR =690E-9 XTB=1.4 +QUASIMOD=1 RCO=24 GAMMA=75E-8 * *$ * ZTX705*ZETEX ZTX705 Spice Model v1.0 Last Revised 9/8/90 * .SUBCKT ZTX705 1 2 3 * C B E Q1 1 2 4 SUB704 Q2 1 4 3 SUB704 4 * .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817 +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595 .ENDS ZTX705 * *$ * ZTX718*ZETEX ZTX718 Spice Model v1.0 Last Revised 15/12/93 * .MODEL ZTX718 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * ZTX749*ZETEX ZTX749 Spice Model v1.0 Last Revised 17/7/90 * .MODEL ZTX749 PNP IS =2.6E-13 BF =210 VAF=27 IKF=7 ISE=1.2E-13 NE =1.43 BR =70 +VAR=14 IKR=.6 ISC=12.04E-13 NC =1.4474 NF =.999 NR =.982 RB =.3 RE =.065 +RC =.04 CJE=410E-12 TF =.65E-9 CJC=140E-12 TR =12E-9 MJC=.35 VJC=.305 * *$ * ZTX751*ZETEX ZTX751 Spice Model v1.0 Last Revised 23/1/91 * .MODEL ZTX751 PNP IS =2.715E-13 BF =170 VAF=70 NF =1.004 IKF=2.75 ISE=1E-13 +NE =1.535 BR =23 VAR=40 NR =1.005 IKR=.55 ISC=5.15E-14 NC =1.13 RB =.07 +RE =.065 RC =.085 CJE=360E-12 TF =.94E-9 CJC=90E-12 TR =60E-9 VJC=.705 +MJC=.46 * *$ * ZTX753*ZETEX ZTX753 Spice Model v1.0 Last Revised 24/5/93 * .MODEL ZTX753 PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76 + ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51 + ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07 + CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12 + TF =0.86E-9 TR =24E-9 * *$ * ZTX757*ZETEX ZTX757 Spice Model v3.0 Last Revised 24/2/05 * .MODEL ZTX757 PNP IS =1.305E-13 NF =1.0004 BF =120 IKF=.5 VAF=1060 +ISE=7.5E-13 NE =1.5 RCO=15 GAMMA=5E-8 NR =1 ISC=2E-13 NC =1.8 +VAR=50 BR =3.2 IKR=.5 RB =.1 RE =.19 RC =.2 CJC=48E-12 MJC=.56 +VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6 +TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1 * *$ * ZTX758*ZETEX ZTX758 Spice Model v2.0 Last Revised 14/6/04 * .MODEL ZTX758 PNP IS =1.305E-13 NF =1.0004 BF =150 VAF=350 +ISE=7.5E-13 NE =1.5 RCO=20 GAMMA=2.5E-8 QUASIMOD=1 NR =1 +ISC=2E-13 NC =1.8 VAR=30 BR =2.5 RB =.1 RE =.01 RC =.01 +CJC=58E-12 MJC=.56 VJC=.775 CJE=404E-12 TF =1E-9 TR =1200E-9 +XTB=1.7 * *$ * ZTX788A*ZETEX ZTX788A Spice Model v1.0 Last Revised 3/6/92 * .MODEL ZTX788A PNP IS=1.2016E-12 NF=1.0186 BF=490 IKF=3.8 VAF=10.8 +ISE=2.2E-13 NE=1.57 NR=1.011 BR=190 IKR=0.35 VAR=13.6 +ISC=2.38E-12 NC=1.693 RB=0.050 RE=0.028 RC=0.042 CJC=156E-12 +MJC=0.4266 VJC=0.9718 CJE=335E-12 TF=0.78E-9 TR=4.6E-9 * *$ * ZTX788B*ZETEX ZTX788B Spice Model v1.0 Last Revised 2/1/92 * .MODEL ZTX788B PNP IS=1.252E-12 NF=1.0119 BF=770 IKF=2.6 VAF=11 +ISE=1.3185E-13 NE=1.4832 NR=1.0047 BR=350 IKR=0.32 VAR=10.5 +ISC=5.2648E-14 NC=1.186 RB=0.053 RE=0.031 RC=0.044 CJC=137E-12 +MJC=0.34 VJC=0.275 CJE=280E-12 TF=0.75E-9 TR=2.3E-9 * *$ * ZTX789A*ZETEX ZTX789A Spice Model v1.0 Last Revised 3/1/92 * .MODEL ZTX789A PNP IS=8.5083E-13 NF=1.007 BF=540 IKF=3.4 VAF=15.5 +ISE=1.60716E-13 NE=1.5059 NR=1.0025 BR=180 IKR=0.3 VAR=9 ISC=7.382E-14 +NC=1.2275 RB=0.05 RE=0.32 RC=0.052 CJC=140E-12 MJC=0.335 VJC=0.26 +CJE=300E-12 TF=0.73E-9 TR=4.2E-9 * *$ * ZTX790A*ZETEX ZTX790A Spice Model v2.0 Last Revised 1/5/03 * .MODEL ZTX790A PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * ZTX792A*ZETEX ZTX792A Spice Model v1.0 Last Revised 7/1/92 * .MODEL ZTX792A PNP IS=5.98255E-13 NF=1.0022 BF=525 IKF=1.25 VAF=30 +ISE=1.45E-13 NE=1.54 NR=0.995 BR=75 IKR=0.4 VAR=34 ISC=1.58913E-13 +NC=1.03943 RB=0.06 RE=0.059 RC=0.08 CJC=90E-12 MJC=0.5 VJC=0.71 +CJE=286E-12 TF=0.75E-9 TR=93.75E-9 *Note, The Model may be inaccurate for collector currents above 1.2A. * *$ * ZTX795A*ZETEX ZTX795A Spice Model v1.0 Last revision 16/09/05 * .MODEL ZTX795A PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14 +NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 +TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +RCO=4.3 GAMMA=0.5E-7 * *$ * ZTX796A*ZETEX ZTX796A Spice Model v2.0 Last Revised 4/3/05 * .MODEL ZTX796A PNP IS=7E-13 NF=1.005 BF=450 IKF=2 VAF=450 ISE=1E-14 +NE=1.4 NR=1 BR=6.5 VAR=48 ISC=4.1E-13 IKR=0.4 NC=1.07 RB=0.05 +RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12 TF=0.83E-9 +TR=130E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=13 GAMMA=2E-7 * *$ * ZTX849*ZETEX ZTX849 Spice Model v1.0 Last Revised 20/1/93 * .MODEL ZTX849 NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ * ZTX851*ZETEX ZTX851 Spice Model v1.0 Last Revised 21/1/93 * .MODEL ZTX851 NPN IS =1.0085E-12 NF =1.0001 BF =240 IKF=5.1 VAF=158 + ISE=2E-13 NE =1.38 NR =0.9988 BR =110 IKR=5.5 VAR=46 + ISC=4.6515E-13 NC =1.334 RB =0.025 RE =0.018 RC =0.015 + CJC=155E-12 MJC=0.4348 VJC=0.6477 CJE=1.05E-9 + TF =0.79E-9 TR =24E-9 * *$ * ZTX853*ZETEX ZTX853 Spice Model v1.0 Last Revised 30/7/98 * .MODEL ZTX853 NPN IS =8E-13 NF =0.99 BF =240 IKF=1.4 VAF=200 +ISE=4E-13 NE =1.27 NR =0.99 BR =90 IKR=1.4 VAR=46 ISC=100E-12 +NC =1.65 CJC=127E-12 MJC=0.46 VJC=.65 CJE=1.07E-9 RB=.3 RC=.014 +RE=.014 TF =0.9E-9 TR =20e-9 * *$ * ZTX855*ZETEX ZTX855 Spice Model v2.0 Last Revised 24/2/05 * .MODEL ZTX855 NPN IS =7.5E-13 BF =240 NF=0.995 VAF=350 ISE=4E-13 +NE=1.42 GAMMA=8E-8 RCO=2 XTB=1.4 BR=27 NR=1.0015 VAR=140 ISC=8E-12 +NC=1.3 RB=0.15 RE=0.018 RC=0.018 CJE=4.2E-10 CJC=6.6E-11 VJC=0.48 +MJC=0.41 TF =1.5E-9 TR=18E-8 QUASIMOD=1 * *$ * ZTX857*ZETEX ZTX857 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL ZTX857 NPN IS=2E-12 NF=1.006 BF=226 IKF=5 VAF=595 ISE=3.6E-13 +NE=1.4088 NR=1.01 BR=40 IKR=94m VAR=33.5 ISC=1.502E-12 NC=1.067 +RB=.02 RE=.055 RC=.02 CJC=63E-12 MJC=.505 VJC=.491 CJE=1.1E-9 +TF=1.3E-9 TR=1.75E-6 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 +VO=10 RCO=2.5 GAMMA=6E-8 * *$ * ZTX869*ZETEX ZTX869 Spice Model v1.0 Last Revised 25/04/01 * .MODEL ZTX869 NPN IS =1.9E-12 BF =600 IKF=9 VAF=40 +ISE=3.752E-13 NE =1.399 NR =1 BR =370 IKR=6 +VAR=18 ISC=4.135E-13 NC =1.384 RB =1 RBM =0.01 +IRB =1 RE = 0.01 RC =0.02 CJC=215E-12 MJC=0.3917 +VJC=0.5871 CJE=910.3E-12 MJE=0.3826 VJE=0.7686 +TF =1.15E-9 TR =4.01E-9 * *$ * ZTX948*ZETEX ZTX948 Spice Model v1.0 Last Revised 26/5/92 * .MODEL ZTX948 PNP IS=1.5554E-12 NF=1.013 BF=208 IKF=14.7 VAF=22.4 +ISE=1.48E-13 NE=1.485 NR=1.004 BR=140 IKR=1.34 VAR=15.4 +ISC=1.3946E-11 NC=1.702 RB=0.020 RE=0.0177 RC=0.015 CJC=440E-12 +MJC=0.3604 VJC=0.685 CJE=1.23E-9 TF=1.38E-9 TR=4.8E-9 * *$ * ZTX949*ZETEX ZTX949 Spice Model v1.0 Last Revised 27/5/92 * .MODEL ZTX949 PNP IS=1.5111E-12 NF=1.0127 BF=208 IKF=12.4 VAF=32.7 +ISE=1.335E-13 NE=1.42 NR=1.009 BR=145 IKR=1.25 VAR=26.5 +ISC=1.392E-13 NC=1.14 RB=0.026 RE=0.019 RC=0.0175 CJC=362E-12 +MJC=0.338 VJC=0.4294 CJE=1.17E-9 TF=1.01E-9 TR=7.5E-9 * *$ * ZTX951*ZETEX ZTX951 Spice Model v1.0 Last Revised 27/5/92 * .MODEL ZTX951 PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3 +ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12 +NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 +VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9 * *$ * ZTX953*ZETEX ZTX953 Spice Model v1.1 Last Revised 24/4/03 * .MODEL ZTX953 PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55 +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12 +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286 +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * ZTX955*ZETEX ZTX955 Spice Model v3.0 Last Revised 24/2/05 * .MODEL ZTX955 PNP IS =6E-13 BF =150 NF=1 VAF=40 ISE=4E-13 +NE=1.42 GAMMA=1E-8 RCO=1 XTB=1.4 BR=21 NR=1.0015 VAR=19 ISC=8E-12 +NC=1.3 RB=0.15 RE=0.023 RC=0.018 CJE=1190E-12 VJE=0.92 MJE=0.44 +CJC=216E-12 VJC=0.87 MJC=0.54 TF =9E-10 TR=11E-8 QUASIMOD=1 * *$ * ZTX956*ZETEX ZTX956 Spice Model v3.0 Last Revised 24/2/05 * .MODEL ZTX956 PNP IS =3E-12 BF =215 NF=1 VAF=86 IKF=2 ISE=6.5E-13 +NE=1.58 GAMMA=1E-8 RCO=1.4 XTB=1.4 BR=18 NR=1 VAR=59 ISC=6E-12 +NC=1.6 RB=0.05 RE=0.02 RC=0.01 CJC=191E-12 MJC=0.5535 VJC=0.8577 +CJE=1.08E-9 TF=0.895E-9 TR=118E-9 QUASIMOD=1 * *$ * ZTX957*ZETEX ZTX957 Spice Model v2.0 Last Revised 21/01/2005 * .MODEL ZTX957 PNP IS=1.3152E-12 NF=1.0106 BF=215 IKF=4 VAF=325 +ISE=5.5E-13 NE=1.524 NR=1.0104 BR=8 IKR=0.63 VAR=110 ISC=6E-12 +NC=1.8 RB=0.25 RE=0.07 RC=0.07 CJC=140E-12 MJC=0.5432 VJC=0.7592 +CJE=1.1E-9 TF=1.23E-9 TR=560E-9 XTB=1.4 TRB1=.005 TRE1=.005 +QUASIMOD=1 VO=10 RCO=6.5 GAMMA=0.8E-7 * *$ * ZTX958* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23JUL2010 *VERSION=2 * .MODEL ZTX958 PNP IS=1.601E-12 NF=1.01 BF=175 IKF=2.8 VAF=530 ISE=1.7E-13 + NE=1.46 NR=1.05 BR=5 IKR=0.8 VAR=28 ISC=5E-11 NC=1.7 RB=0.25 RE=0.038 + RC=0.035 CJC=113E-12 MJC=0.507 VJC=0.595 CJE=1.05E-9 TF=1.26E-9 TR=1.28E-6 + XTB=1.4 TRB1=0.005 TRE1=0.005 QUASIMOD=1 VO=10 RCO=7 GAMMA=0.5E-7 * *$ ZTX968*ZETEX ZTX968 Spice Model v1.0 Last Revised 25/5/92 * .MODEL ZTX968 PNP IS=3.58E-12 NF=1.015 BF=500 IKF=11 VAF=11.4 +ISE=1.576E-13 NE=1.42 NR=1.01 BR=245 IKR=1.4 VAR=8.4 ISC=1.48E-11 +NC=1.637 RB=0.024 RE=0.0164 RC=0.0235 CJC=438E-12 MJC=0.361 +VJC=0.673 CJE=1.05E-9 TF=1.38E-9 TR=2.3E-9 * *$ * ZUMT617*ZETEX ZUMT617 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT617 NPN IS =2.66E-13 BF =550 IKF=2.25 VAF=34.6 +ISE=5.7E-14 NE =1.425 BR =280 IKR=0.9 VAR=12.25 +ISC=2.76E-13 NC =1.46 RB =0.22 RE =0.055 RC =0.038 +CJC=34.2E-12 MJC=0.298 VJC=0.441 CJE=103.5E-12 +MJE=0.357 VJE=0.7042 TF =1.12E-9 TR =2.15E-9 * *$ * ZUMT618*ZETEX ZUMT618 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT618 NPN IS =2.52E-13 BF =550 IKF=2.1 VAF=51 +ISE=7.8E-14 NE =1.4 BR =200 IKR=1.35 VAR=25 ISC=3.29E-13 +NC =1.47 RB =0.071 RE =0.06 RC =0.055 CJC=26.6E-12 MJC=0.265 +VJC=0.305 CJE=97.2E-12 TF =0.95E-9 TR =2.25E-9 * *$ * ZUMT619*ZETEX ZUMT619 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT619 NPN IS =2.61E-13 BF =550 IKF=0.99 VAF=84 +ISE=7.17E-14 NE =1.4148 BR =110 IKR=0.63 VAR=51 ISC=2.25E-12 +NC =1.45 RB =0.093 RE =0.073 RC =0.083 CJC=18E-12 MJC=0.371 +VJC=0.435 CJE=97.7E-12 TF =0.78E-9 TR =9E-9 * *$ * ZUMT717*ZETEX ZUMT717 Spice Model v1.0 Last Revised 14/12/00 * .MODEL ZUMT717 PNP IS =1.57E-13 BF =500 IKF =0.86 +VAF =14.93 ISE=0.5E-13 NE =1.5 NR =1.00 BR =280 +IKR=0.086 VAR=5.64 ISC=1.72E-13 NC =1.34 RB =1.05 +RE =0.105 RC =0.088 CJC=48.7E-12 MJC=0.3456 +VJC=0.4576 CJE=93.2E-12 MJE=0.4803 VJE=0.9091 +TF =1.2E-9 TR =2E-9 * *$ * ZUMT718*ZETEX ZUMT718 Spice Model v1.0 Last Revised 24/1/03 * .MODEL ZUMT718 PNP IS =3.1E-13 BF =550 IKF =0.45 VAF =23 +ISE=3.6E-14 NE =1.557 BR =70 IKR=0.18 VAR=7 ISC=3.4E-14 NC =1.19 +RB =.188 RE =0.089 RC =0.1 CJC=31.5E-12 MJC=0.469 VJC=0.771 +CJE=91.6E-12 MJE=0.503 VJE=0.94 TF =0.71E-9 TR =23.7E-9 * *$ * ZUMT720*ZETEX ZUMT720 Spice Model v1.0 Last Revised 14/1/03 * .MODEL ZUMT720 PNP IS=2.817E-13 BF=550 IKF=0.63 VAF=28.4 +ISE=4.76E-14 NE=1.492 BR=42 IKR=0.293 VAR=10.21 ISC=2.7E-14 +NC =1.124 RB=0.173 RE=0.171 RC=0.089 CJC=28.5E-12 MJC=0.506 +VJC=0.843 CJE=92E-12 MJE=0.524 VJE=1.021 TF=0.8E-9 TR=20E-9 * *$ * ZVN0124A*ZETEX ZVN0124A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN0124A 3 4 5 * D G S M1 3 2 5 5 MN0124 RG 4 2 225 RL 3 5 2.4E7 C1 2 5 60E-12 C2 3 2 2E-12 D1 5 3 DN0124 * .MODEL MN0124 NMOS VTO=1.5512 RS=1.436 RD=9.254 IS=1E-15 KP=1.077 +CBD=36E-12 PB=1 LAMBDA=0 .MODEL DN0124 D IS=3.071E-12 N=1.026 RS=0.511 .ENDS ZVN0124A * *$ * ZVN0540A*ZETEX ZVN0540A Spice Model v1.0 Last Revised 4/8/04 * * .SUBCKT ZVN0540A 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * ZVN0545A*ZETEX ZVN0545A Spice Model v1.0 Last Revised 20/5/04 * * .SUBCKT ZVN0545A 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * ZVN0545G*ZETEX ZVN0545G Spice Model v1.0 Last Revised 20/5/04 * * .SUBCKT ZVN0545G 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=25e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * ZVN2106A*ZETEX ZVN2106A Spice Model v1.2 Last Revised 6/4/01 * .SUBCKT ZVN2106A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N2106AM M2 6 2 8 8 N2106AMS RG 4 2 15 RD 3 6 0.25 RS 8 5 0.94 RL 3 5 100E6 C1 2 8 37E-12 C2 2 3 20E-12 C3 15 14 85E-12 C4 16 8 87E-12 D1 5 3 N2106AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 +CBD=50E-12 PB=1 .MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1 .MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-5 VOFF=-6 .ENDS ZVN2106A * *$ * ZVN2106G*ZETEX ZVN2106G Spice Model v1.2 Last Revised 6/4/01 * .SUBCKT ZVN2106G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N2106AM M2 6 2 8 8 N2106AMS RG 4 2 15 RD 3 6 0.25 RS 8 5 0.94 RL 3 5 100E6 C1 2 8 37E-12 C2 2 3 20E-12 C3 15 14 85E-12 C4 16 8 87E-12 D1 5 3 N2106AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 +CBD=50E-12 PB=1 .MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1 .MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-5 VOFF=-6 .ENDS ZVN2106G * *$ * ZVN2110A*ZETEX ZVN2110A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN2110A 3 4 5 * D G S M1 3 2 5 5 MN2110a M2 3 2 5 5 MN2110b RG 4 2 200 RL 3 5 1E9 C1 2 5 50E-12 C2 3 2 5E-12 D1 5 3 DN2110a * .MODEL MN2110a NMOS VTO=2 RS=.1 RD=1.8 IS=1E-15 KP=0.3 +CBD=60E-12 PB=1 LAMBDA=2.6E-3 .MODEL MN2110b NMOS VTO=0.9 RS=2 KP=0.1 PB=1 LAMBDA=2.6E-3 .MODEL DN2110a D IS=1E-12 RS=0.37 .ENDS ZVN2110A * *$ * ZVN2110G*ZETEX ZVN2110G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN2110G 3 4 5 * D G S M1 3 2 5 5 MN2110a M2 3 2 5 5 MN2110b RG 4 2 200 RL 3 5 1E9 C1 2 5 50E-12 C2 3 2 5E-12 D1 5 3 DN2110a * .MODEL MN2110a NMOS VTO=2 RS=.1 RD=1.8 IS=1E-15 KP=0.3 +CBD=60E-12 PB=1 LAMBDA=2.6E-3 .MODEL MN2110b NMOS VTO=0.9 RS=2 KP=0.1 PB=1 LAMBDA=2.6E-3 .MODEL DN2110a D IS=1E-12 RS=0.37 .ENDS ZVN2110G * *$ * ZVN2120G*ZETEX ZVN2120G Spice Model v2.1 Last Revised 12/10/06 * .SUBCKT ZVN2120G 3 4 5 * D G S M1 30 2 50 50 Mmod1 M2 30 2 50 50 Mmod2 RG 4 2 35 RIN 2 5 2E10 RL 3 5 2E8 RD 31 30 Rmod1 7 RS 50 51 1.0 C1 2 50 60E-12 C2 3 2 6E-12 C3 12 50 50E-12 C4 15 14 100E-12 D1 5 3 Dmod1 VX 51 5 0 H1 60 5 VX 10 S3 3 31 60 5 Smod3 S1A 2 12 13 50 Smod1a S1B 13 12 13 50 Smod1b S2A 2 15 14 13 Smod2a S2B 13 15 14 13 Smod2b Egs1 13 50 2 50 1 Eds1 14 50 30 50 1 * .MODEL Mmod1 NMOS VTO=1.8 IS=1E-15 KP=0.5 PB=1 LAMBDA=1.5E-3 .MODEL Mmod2 NMOS VTO=1.3 RS=2 KP=0.1 PB=1 LAMBDA=1.5E-3 .MODEL Dmod1 D IS=1E-12 BV=220 RS=1 CJO=124E-12 M=0.7 VJ=0.36 .MODEL Smod1a VSWITCH RON=.001 ROFF=100 VON=-6 VOFF=-4 .MODEL Smod1b VSWITCH RON=.001 ROFF=100 VON=-4 VOFF=-6 .MODEL Smod2a VSWITCH RON=.001 ROFF=100 VON=-1.5 VOFF=1.5 .MODEL Smod2b VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=-1.5 .MODEL Smod3 VSWITCH RON=0.1 ROFF=90 VON=4.5 VOFF=25 .MODEL Rmod1 RES (TC1=8E-3 TC2=1.8E-5) .ENDS ZVN2120G * *$ * ZVN3306A*ZETEX ZVN3306A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3306A 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS ZVN3306A * *$ * ZVN3306F*ZETEX ZVN3306F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3306F 3 4 5 * D G S M1 3 2 5 5 N3306M RG 4 2 270 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 5 3 N3306D * .MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 +CBD=35E-12 PB=1 .MODEL N3306D D IS=5E-12 RS=.768 .ENDS ZVN3306F * *$ * ZVN3310A*ZETEX ZVN3310A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3310A 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS ZVN3310A * *$ * ZVN3310F*ZETEX ZVN3310F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN3310F 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 356 RL 3 5 1E8 C1 2 5 21.5P C2 3 2 2.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.736 RS=2.147 RD=1.682 IS=1E-15 KP=0.157 +CBD=25.5P PB=1 .MODEL DIODE1 D IS=6.12E-13 RS=.629 .ENDS ZVN3310F * *$ * ZVN3320F*ZETEX ZVN3320F Spice Model v1.0 Last Revised 27/5/02 * .SUBCKT ZVN3320F 3 4 5 * ----connections---- D G S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 190 RIN 2 8 200E6 RD 3 6 RDSMOD 18 RS 8 5 RDSMOD 1.5 RL 3 5 35E6 C1 2 8 6.5E-12 *C2 2 3 1E-12 C3 15 14 3.8E-12 C4 16 8 5.3E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=1.55 IS=1E-15 KP=0.07 CBD=39E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.007 PB=1 .MODEL DMOD1 D IS=3E-8 RS=.17 N=1.95 TT=1e-9 BV=220 IBV=1E-3 .MODEL DMOD2 D CJO=1.8E-12 IS=1E-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=1 VOFF=-1 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=3.5 VOFF=1.5 .MODEL RDSMOD RES (TC1=7E-3 TC2=4.2E-5) .ENDS ZVN3320F * *$ * ZVN4106F*ZETEX ZVN4106F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4106F 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 343 RL 3 5 6E6 C1 2 5 23.5P C2 3 2 4.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS ZVN4106F * *$ * ZVN4206A*ZETEX ZVN4206A Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206A * *$ * ZVN4206AV*ZETEX ZVN4206AV Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206AV 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206AV * *$ * ZVN4206G*ZETEX ZVN4206G Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206G * *$ * ZVN4206GV*ZETEX ZVN4206GV Spice Model v1.0 Last Revised 30/01/02 * .SUBCKT ZVN4206GV 3 4 5 *------connections-------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 30 RD 3 6 0.05 RS 8 5 0.5 RL 3 5 6E6 C1 2 8 80E-12 C2 2 3 25E-12 C3 15 14 75E-12 C4 16 8 40E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.4 IS=1E-15 KP=0.84 CBD=195E-12 PB=1 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.084 PB=1 .MODEL DMOD D IS=6E-13 RS=.13 N=1.01 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=1.5 VOFF=4.5 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZVN4206GV * *$ * ZVN4210A*ZETEX ZVN4210A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4210A 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 401.5 RL 3 5 1E7 C1 2 5 61.5P C2 3 2 3.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082 +CBD=108P PB=1 LAMBDA=0 .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166 .ENDS ZVN4210A * *$ * ZVN4210G*ZETEX ZVN4210G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4210G 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 401.5 RL 3 5 1E7 C1 2 5 61.5P C2 3 2 3.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082 +CBD=108P PB=1 LAMBDA=0 .MODEL DIODE1 D IS=1.10461E-12 N=1.0114 RS=0.166 .ENDS ZVN4210G * *$ * ZVN4306A*ZETEX ZVN4306A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4306A 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306A * *$ * ZVN4306AV*ZETEX ZVN4306AV Spice Model v1.0 Last Revised 23/3/06 * .SUBCKT ZVN4306AV 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306AV * *$ * ZVN4306G*ZETEX ZVN4306G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVN4306G 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306G * *$ * ZVN4306GV*ZETEX ZVN4306GV Spice Model v1.0 Last Revised 23/2/06 * .SUBCKT ZVN4306GV 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 108 RL 3 5 6E6 C1 2 5 224.5E-12 C2 3 2 10.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.634 RS=0.2762 RD=0.0 IS=1E-15 KP=9.77 +CBD=405E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=6.19E-13 N=1.0043 RS=0.065 .ENDS ZVN4306GV * *$ * ZVN4310A*ZETEX ZVN4310A Spice Model v1.1 Last Revised 8/2/02 * .SUBCKT ZVN4310A 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 82 RL 3 5 1E7 C1 2 5 200E-12 C2 3 2 13.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02 +CBD=288E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844 .ENDS ZVN4310A * *$ * ZVN4310G*ZETEX ZVN4310G Spice Model v1.1 Last Revised 8/2/02 * .SUBCKT ZVN4310G 3 4 5 *NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 82 RL 3 5 1E7 C1 2 5 200E-12 C2 3 2 13.5E-12 D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02 +CBD=288E-12 PB=1 LAMBDA=0 .MODEL DIODE1 D IS=9.759E-13 N=1.02476 RS=0.0844 .ENDS ZVN4310G * *$ * ZVN4424A*ZETEX ZVN4424A Spice Model v1.2 Last Revised 20/3/01 * .SUBCKT ZVN4424A 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 9 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 C1 2 8 137E-12 C2 2 3 15E-12 C3 15 14 385E-12 C4 16 8 220E-12 D1 5 3 N4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=-2.5 .ENDS ZVN4424A * *$ * ZVN4424G*ZETEX ZVN4424G Spice Model v1.2 Last Revised 20/3/01 * .SUBCKT ZVN4424G 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 9 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 C1 2 8 137E-12 C2 2 3 15E-12 C3 15 14 385E-12 C4 16 8 220E-12 D1 5 3 N4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=-2.5 .ENDS ZVN4424G * *$ * ZVN4424Z (Not Recommended)* *Zetex ZVN4424Z Spice Model v1 Last Revised 28/7/08 * .SUBCKT ZVN4424Z 3 4 5 *------connections-------D-G-S M1 6 2 8 8 N4424AM M2 6 2 8 8 N4424AMS RG 4 2 35 RD 3 6 3.6 RS 8 5 0.15 RL 3 5 240E6 D1 5 3 N4424AD Egs2 13 8 2 8 1 Eds1 14 8 6 8 1 C1 2 8 145E-12 C2 2 3 11E-12 C3 15 14 235E-12 C4 16 8 226E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1 VOFF=2 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2 VOFF=1 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-4 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-4 VOFF=-3 .MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85 +CBD=66.2E-12 PB=1 .MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085 +CBD=.66E-12 PB=1 .MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078 .ENDS ZVN4424Z * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZVN4525E6*ZETEX ZVN4525E6 Spice Model v1.0 Last Revised 4/8/2004 * .SUBCKT ZVN4525E6 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * ZVN4525G*ZETEX ZVN4525G Spice Model v1.0 Last Revised 21/05/2004 * .SUBCKT ZVN4525G 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * ZVN4525Z*ZETEX ZVN4525Z Spice Model v1.0 Last Revised 4/8/2004 * .SUBCKT ZVN4525Z 3 4 5 *------connections-------D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 4.8 RS 8 5 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 NMOS VTO=1.3 IS=1E-15 KP=0.46 .MODEL MOSMOD2 NMOS VTO=.86 IS=1E-15 KP=0.0046 .MODEL DMOD1 D IS=4.14E-13 RS=.278 N=1.0078 CJO=130E-12 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=-1.7 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=2.75 VOFF=-1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=8.9e-3 TC2=3e-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * ZVNL110A*ZETEX ZVNL110A Spice Model v1.0 Last Revised 19/3/03 * .SUBCKT ZVNL110A 3 4 5 * D G S M1 21 22 23 23 MNL110a M2 21 22 23 23 MNL110b RG 4 22 120 RD 3 21 2 RS 5 23 1 RL 3 5 1E9 C1 22 5 55E-12 C2 3 22 5E-12 D1 5 3 DNL110a * .MODEL MNL110a NMOS VTO=2.1 IS=1E-15 KP=0.2 CBD=60E-12 PB=1 +LAMBDA=2.6E-3 .MODEL MNL110b NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL DNL110a D IS=1E-12 RS=0.37 BV=105 .ENDS ZVNL110A * *$ * ZVNL110G*ZETEX ZVNL110G Spice Model v1.0 Last Revised 19/3/03 * .SUBCKT ZVNL110G 3 4 5 * D G S M1 21 22 23 23 MNL110a M2 21 22 23 23 MNL110b RG 4 22 120 RD 3 21 2 RS 5 23 1 RL 3 5 1E9 C1 22 5 55E-12 C2 3 22 5E-12 D1 5 3 DNL110a * .MODEL MNL110a NMOS VTO=2.1 IS=1E-15 KP=0.2 CBD=60E-12 PB=1 +LAMBDA=2.6E-3 .MODEL MNL110b NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL DNL110a D IS=1E-12 RS=0.37 BV=105 .ENDS ZVNL110G * *$ * ZVNL120A*ZETEX ZVNL120A Spice Model v1.0 Last Revised 27/9/04 * .SUBCKT ZVNL120A 3 4 5 * D G S M1 21 2 23 23 Mmod1 M2 21 2 23 23 Mmod2 J1 24 25 21 Jmod RJ 25 23 1000 RG 4 22 90 RD1 3 24 Rmod1 2 RD2 21 24 Rmod1 20 RS 5 23 Rmod1 1 RL 3 5 1.5E9 RIN 22 5 2E9 C1 22 5 85E-12 C2 3 22 7E-12 D1 5 3 Dmod Igt 5 31 1 Rgt 31 32 Rmod2 1 Vgt 5 32 1 Egt 22 2 5 31 1 .MODEL Mmod1 NMOS VTO=1.7 IS=1E-15 KP=0.5 CBD=20E-12 PB=1 +LAMBDA=2.6E-3 .MODEL Mmod2 NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL Jmod NJF Beta=15m Betatce=-.5 Lambda=50m Vto=-6.25 Vtotc=-2.5m .MODEL Dmod D IS=1E-12 RS=0.5 BV=205 .MODEL Rmod1 RES (TC1=9e-3 TC2=2.5E-5) .MODEL Rmod2 RES (TC1=2.4e-3 TC2=1E-6) .ENDS ZVNL120A * *$ * ZVNL120G*ZETEX ZVNL120G Spice Model v1.0 Last Revised 27/9/04 * .SUBCKT ZVNL120G 3 4 5 * D G S M1 21 2 23 23 Mmod1 M2 21 2 23 23 Mmod2 J1 24 25 21 Jmod RJ 25 23 1000 RG 4 22 90 RD1 3 24 Rmod1 2 RD2 21 24 Rmod1 20 RS 5 23 Rmod1 1 RL 3 5 1.5E9 RIN 22 5 2E9 C1 22 5 85E-12 C2 3 22 7E-12 D1 5 3 Dmod Igt 5 31 1 Rgt 31 32 Rmod2 1 Vgt 5 32 1 Egt 22 2 5 31 1 .MODEL Mmod1 NMOS VTO=1.7 IS=1E-15 KP=0.5 CBD=20E-12 PB=1 +LAMBDA=2.6E-3 .MODEL Mmod2 NMOS VTO=0.95 RS=2 Rd=2 KP=0.05 PB=1 LAMBDA=2.6E-3 .MODEL Jmod NJF Beta=15m Betatce=-.5 Lambda=50m Vto=-6.25 Vtotc=-2.5m .MODEL Dmod D IS=1E-12 RS=0.5 BV=205 .MODEL Rmod1 RES (TC1=9e-3 TC2=2.5E-5) .MODEL Rmod2 RES (TC1=2.4e-3 TC2=1E-6) .ENDS ZVNL120G * *$ * ZVP0545A*ZETEX ZVP0545A Spice Model v1.0 Last Revised 4/8/2004 * * .SUBCKT ZVP0545A 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 85 RIN 2 8 200E6 RD 3 6 RMOD1 71 RS 8 5 RMOD1 6.6 RL 3 5 200E6 C1 2 8 110E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * ZVP0545G*ZETEX ZVP0545G Spice Model v1.2 Last Revised 20/05/2004 * * .SUBCKT ZVP0545G 3 4 5 * D G S M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 85 RIN 2 8 200E6 RD 3 6 RMOD1 71 RS 8 5 RMOD1 6.6 RL 3 5 200E6 C1 2 8 110E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5e-3 TC2=3.3e-6) .ENDS * *$ * ZVP1320F*ZETEX ZVP1320F Spice Model v1.0 Last Revised 13/06/02 * .SUBCKT ZVP1320F 3 4 5 * D G S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 56 RIN 2 8 200E6 RD 3 6 RDSMOD 71 RS 8 5 RDSMOD 6.6 RL 3 5 200E6 C1 2 8 42E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 Egs1 2 17 2 8 1 .MODEL MOSMOD PMOS VTO=-2.56 IS=1E-15 KP=.059 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2.2 IS=1E-15 KP=0.002 PB=1 .MODEL DMOD1 D IS=2E-13 RS=0.12 N=1.01 IKF=3e-3 .MODEL DMOD2 D CJO=18e-12 IS=1e-30 N=10 .MODEL RDSMOD RES (TC1=8E-3 TC2=3E-5) .ENDS ZVP1320F * *$ * ZVP2106A*ZETEX ZVP2106A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP2106A 3 4 5 * D G S M1 3 2 5 5 MP2106 RG 4 2 160 RL 3 5 1.2E8 C1 2 5 47E-12 C2 3 2 10E-12 D1 3 5 DP2106 * .MODEL MP2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DP2106 D IS=2E-13 RS=0.309 .ENDS ZVP2106A * *$ * ZVP2106G*ZETEX ZVP2106G Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP2106G 3 4 5 * D G S M1 3 2 5 5 MP2106 RG 4 2 160 RL 3 5 1.2E8 C1 2 5 47E-12 C2 3 2 10E-12 D1 3 5 DP2106 * .MODEL MP2106 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DP2106 D IS=2E-13 RS=0.309 .ENDS ZVP2106G * *$ * ZVP2110A*ZETEX ZVP2110A Spice Model v1.0 Last Revised 23/7/04 * .SUBCKT ZVP2110A 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 65 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 2.5 C1 2 5 140E-12 **C2 3 2 15E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=105E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=60e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=8e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP2110A * *$ * ZVP2110G*ZETEX ZVP2110G Spice Model v1.0 Last Revised 22/7/04 * .SUBCKT ZVP2110G 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 65 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 2.5 C1 2 5 140E-12 **C2 3 2 15E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=105E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=60e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=8e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP2110G * *$ * ZVP2120A*ZETEX ZVP2120A Spice Model v1.0 Last Revised 10/8/05 * .SUBCKT ZVP2120A 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 **C2 3 2 15E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS ZVP2120A * *$ * ZVP2120G*ZETEX ZVP2120G Spice Model v1.0 Last Revised 10/8/05 * .SUBCKT ZVP2120G 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 **C2 3 2 15E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS ZVP2120G * *$ * ZVP3306A*ZETEX ZVP3306A Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP3306A 3 4 5 * D G S M1 3 2 5 5 P3306M RG 4 2 252 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 3 5 P3306D * .MODEL P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 KP=.145 +CBD=35E-12 PB=1 LAMBDA=6.67E-3 .MODEL P3306D D IS=5E-12 RS=.768 .ENDS ZVP3306A * *$ * ZVP3306F*ZETEX ZVP3306F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP3306F 3 4 5 * D G S M1 3 2 5 5 P3306M RG 4 2 252 RL 3 5 1.2E8 C1 2 5 28E-12 C2 3 2 3E-12 D1 3 5 P3306D * .MODEL P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 KP=.145 +CBD=35E-12 PB=1 LAMBDA=6.67E-3 .MODEL P3306D D IS=5E-12 RS=.768 .ENDS ZVP3306F * *$ * ZVP3310A*ZETEX ZVP3310A Spice Model v1.0 Last Revised 23/7/04 * .SUBCKT ZVP3310A 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 50 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 5 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.1 RS=2 IS=1E-15 KP=0.2 +CBD=35E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=20e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=9e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP3310A * *$ * ZVP3310F*ZETEX ZVP3310F Spice Model v1.1 Last Revised 22/7/04 * .SUBCKT ZVP3310F 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 50 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 5 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.1 RS=2 IS=1E-15 KP=0.2 +CBD=35E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=1 .MODEL Dmod2 D CJO=20e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=9e-3 TC2=4.2E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=3e-6) .ENDS ZVP3310F * *$ * ZVP4105A (Not Recommended)*ZETEX ZVP4105A Spice Model v1.0 Last Revised 31/3/05 * .SUBCKT ZVP4105A 3 4 5 * NODES: DRAIN GATE SOURCE M1 3 2 5 5 MOD1 RG 4 2 167 RL 3 5 50E6 C1 2 5 26P C2 3 2 4P D1 3 5 DIODE1 * .MODEL MOD1 PMOS VTO=-1.709 RS=3.091 RD=0.979 IS=1E-15 KP=0.146 +CBD=12P PB=1 .MODEL DIODE1 D IS=1.072E-13 RS=0.527 N=1.077 .ENDS ZVP4105A * *$ * ZVP4424A*ZETEX ZVP4424A Spice Model v1.1 Last Revised 21/3/01 * .SUBCKT ZVP4424A 3 4 5 *------connections-------D-G-S * M1 6 2 8 8 P4424AM M2 6 2 8 8 P4424AMS RG 4 2 27 RD 3 6 5.5 RS 8 5 0.6 RL 3 5 240E6 C1 2 8 120E-12 C2 2 3 20E-12 C3 15 14 260E-12 C4 16 8 233E-12 D1 3 5 P4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1 .MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=0.653E-12 PB=1 .MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-1.5 VOFF=-1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=2.5 .ENDS ZVP4424A * *$ * ZVP4424G*ZETEX ZVP4424G Spice Model v1.1 Last Revised 21/3/01 * .SUBCKT ZVP4424G 3 4 5 *------connections-------D-G-S * M1 6 2 8 8 P4424AM M2 6 2 8 8 P4424AMS RG 4 2 27 RD 3 6 5.5 RS 8 5 0.6 RL 3 5 240E6 C1 2 8 120E-12 C2 2 3 20E-12 C3 15 14 260E-12 C4 16 8 233E-12 D1 3 5 P4424AD S1 2 15 13 14 SMOD1 S2 13 15 14 13 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1 .MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=0.653E-12 PB=1 .MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-1.5 VOFF=-1 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=2.5 .ENDS ZVP4424G * *$ * ZVP4424Z* *Zetex ZVP4424Z Spice Model v1.0 Last Revised 17/07/2008 * .SUBCKT ZVP4424Z 3 4 5 *------connections-------D-G-S * M1 6 2 8 8 P4424AM M2 6 2 8 8 P4424AMS RG 4 2 27 RD 3 6 5.5 RS 8 5 0.6 RL 3 5 240E6 D1 3 5 P4424AD Egs2 13 8 2 8 1 Eds1 14 8 6 8 1 C1 2 8 125E-12 C2 2 3 15E-12 C3 15 14 210E-12 C4 16 8 220E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-1 VOFF=-2 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-1 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=3.5 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5 .MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1 .MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=270E-12 PB=1 .MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045 .ENDS ZVP4424Z * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZVP4525E6*ZETEX ZVP4525E6 Spice Model v1.0 Last Revised 6/01/2005 * .SUBCKT ZVP4525E6 3 4 5 *---connections---D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 11 RS 8 5 RMOD1 0.5 RB 3 7 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 7 5 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15 .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015 .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=1.7 VOFF=-2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=-2.75 VOFF=1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=3.5 VOFF=1.5 .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS * *$ * ZVP4525G*ZETEX ZVP4525G Spice Model v1.0 Last Revised 6/01/2005 * .SUBCKT ZVP4525G 3 4 5 *---connections---D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 11 RS 8 5 RMOD1 0.5 RB 3 7 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 7 5 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15 .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015 .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=1.7 VOFF=-2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=-2.75 VOFF=1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=3.5 VOFF=1.5 .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS * *$ * ZVP4525Z*ZETEX ZVP4525Z Spice Model v1.0 Last Revised 6/01/2005 * .SUBCKT ZVP4525Z 3 4 5 *---connections---D-G-S M1 6 20 8 8 MOSMOD1 M2 6 20 8 8 MOSMOD2 RG 4 2 7 RIN 2 8 200E6 RD 3 6 RMOD1 11 RS 8 5 RMOD1 0.5 RB 3 7 RMOD1 0.2 RL 3 5 250E6 C1 2 8 80E-12 C2 2 3 12E-12 C3 15 14 175E-12 C4 16 8 175E-12 D1 7 5 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD1 PMOS VTO=-1.5 IS=1E-15 KP=0.15 .MODEL MOSMOD2 PMOS VTO=-.9 IS=1E-15 KP=0.0015 .MODEL DMOD1 D IS=4.14E-13 N=1.0078 CJO=100E-12 BV=260 .MODEL SMOD1a VSWITCH RON=.01 ROFF=1e3 VON=1.7 VOFF=-2.75 .MODEL SMOD1b VSWITCH RON=.01 ROFF=1e3 VON=-2.75 VOFF=1.7 .MODEL SMOD2a VSWITCH RON=.01 ROFF=1e3 VON=1.5 VOFF=3.5 .MODEL SMOD2b VSWITCH RON=.01 ROFF=1e3 VON=3.5 VOFF=1.5 .MODEL RMOD1 RES (TC1=8e-3 TC2=1.5e-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS * *$ * ZX5T2E6*ZETEX ZX5T2E6 Spice Model v1.0 Last revision 07/06/07 * .MODEL ZX5T2E6 PNP IS=11E-13 BF=610 NF=1 VAF=20.1 IKF=2.5 ISE=1.1E-13 +NE=1.49 BR=75 NR=1 VAR=4.3 IKR=1 ISC=1.1e-13 NC=1.31 RE=0.0072 RB=0.3 +RC=0.012 CJE=460E-12 VJE=1.0 MJE=0.54 CJC=170E-12 VJC=0.62 MJC=0.42 +TF=9E-10 TR=8.5e-9 RCO=0.5 GAMMA=25E-10 QUASIMOD=1 XTB=1.5 TRE1=.003 +TRB1=.003 TRC1=.003 * *$ * ZX5T3Z*ZETEX ZX5T3Z Spice Model v1.1 Last Revised 3/6/2004 * .MODEL ZX5T3 PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * ZX5T851A*ZETEX ZX5T851A Spice Model v1.1 Last Revised 23/03/2006 * .MODEL ZX5T851A NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * ZX5T851G*ZETEX ZX5T851G Spice Model v1.1 Last Revised 23/03/2006 * .MODEL ZX5T851G NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * ZX5T853G.MODEL ZX5T853G NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ ZX5T949G*ZETEX ZX5T949G Spice Model v1.0 Last Revised 18/03/05 * .MODEL ZX5T949G PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * ZX5T951G*ZETEX ZX5T951G Spice Model v2.0 Last revision 09/01/07 * .MODEL ZX5T951G PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * ZX5T953G*ZETEX ZX5T953G Spice Model v1.0 Last revision 13/12/06 * .MODEL ZX5T953G PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ * ZX5T955G*DIODES_INC_SPICE_MODEL ZX5T955G *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZX5T955G PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZX5T955Z*DIODES_INC_SPICE_MODEL ZX5T955Z *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZX5T955Z PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXCL280E5*ZETEX ZXCL280 Spice Model v1.0 Last revision 13/12/06 * *NOTE: This is a simplified model not all features are modeled. * .subckt ZXCL280 1 2 3 4 * NODES: GND EN VIN VOUT M1 4 8 3 3 MOD1 C1 8 3 126E-12 C2 4 8 20E-12 C3 1 10 130E-12 C4 1 11 2E-9 C5 1 15 10E-9 C6 13 1 400E-12 D1 4 3 Dmod1 D2 5 7 Dmod2 D3 1 5 Dmod2 R1 4 9 63.25E3 R2 9 1 50E3 R30 5 6 10E3 R3 10 5 3000 R4 11 5 180E3 R5 15 5 2E6 R6 2 13 1E6 R7 2 1 55E6 R8 3 4 50E6 R9 5 8 34 R10 1 12 Rmod1 1 S1 3 5 13 1 Smod1 E1 3 6 12 9 100 E2 7 1 3 1 1.0 I1 1 12 1.25 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.6 RD=0.2 IS=1E-15 KP=0.73 CBD=60E-12 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH (RON=1 ROFF=1E6 VON=0 VOFF=1) .ENDS ZXCL280 * *$ * ZXCL300E5*ZETEX ZXCL300 Spice Model v1.0 Last revision 13/12/06 * *NOTE: This is a simplified model not all features are modeled. * .subckt ZXCL300 1 2 3 4 * NODES: GND EN VIN VOUT M1 4 8 3 3 MOD1 C1 8 3 126E-12 C2 4 8 20E-12 C3 1 10 130E-12 C4 1 11 2E-9 C5 1 15 10E-9 C6 13 1 400E-12 D1 4 3 Dmod1 D2 5 7 Dmod2 D3 1 5 Dmod2 R1 4 9 71.4E3 R2 9 1 50E3 R30 5 6 10E3 R3 10 5 3000 R4 11 5 180E3 R5 15 5 2E6 R6 2 13 1E6 R7 2 1 55E6 R8 3 4 50E6 R9 5 8 34 R10 1 12 Rmod1 1 S1 3 5 13 1 Smod1 E1 3 6 12 9 100 E2 7 1 3 1 1.0 I1 1 12 1.25 .MODEL MOD1 PMOS (VTO=-0.82 RS=0.6 RD=0.2 IS=1E-15 KP=0.73 CBD=60E-12 KF=2e-19 AF=1.22) .MODEL Dmod1 D (IS=1E-13 RS=0.5 N=1) .MODEL Dmod2 D (IS=1E-13 RS=0.1 N=0.5) .MODEL Rmod1 RES (TC1=-3E-5 TC2=-1E-7) .MODEL Smod1 VSWITCH RON=1 ROFF=1E6 VON=0 VOFF=1 .ENDS ZXCL300 * *$ * ZXCT1008*ZETEX ZXCT1008F Spice Model v1.0 Last revision 15/08/07 * * .SUBCKT ZXCT1008F 1 2 3 * *Pins 1.Load 2.Vin 3.Iout * I1 4 3 4uA R6 4 3 20E6 R1 2 4 Rmod1 1 Q1 4 5 3 LargeN C1 5 11 3E-9 R5 11 3 10 R2 5 6 10E3 D1 6 8 Dmod R3 7 6 1 V2 8 3 10 E1 7 3 4 9 1000 V1 10 1 100e-3 I2 9 10 100E-3 R4 9 10 Rmod2 1 .MODEL Dmod D IS=1E-15 BV=20 IBV=1E-3 .MODEL LargeN NPN IS=3.8E-16 LOT/1/UNIFORM=50% DEV/GAUSS=1% + BF=220 LOT/1/UNIFORM=50% DEV/GAUSS=1% NK=.75 IKF=17e-3 VAF=60 + ISE=1.8E-16 NE=1.4 BR=.7 IKR=3e-2 VAR=7 ISC=5E-12 NC=1.321 RB=300 + RE=19.7 RC=63.4 CJC=51E-12 MJC=.42 VJC=.595 CJE=.21E-12 MJE=.33 + VJE=.7 TF=1.5E-10 TR=6E-9 XTF=0.3 VTF=6 ITF=5E-5 XTB=1.17 XTI=5.4 + KF=2E-13 AF=1.4 .MODEL Rmod1 RES (R=99.5 TC1=1E-3 TC2=1E-5 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .MODEL Rmod2 RES (R=1 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .ENDS * *$ * ZXCT1009*ZETEX ZXCT1009F Spice Model v2.1 Last revision 02/02/07 * * .SUBCKT ZXCT1009F 1 2 3 * *Pins 1.Load 2.Vin 3.Iout * I1 4 3 4uA R6 4 3 20E6 R1 2 4 Rmod1 1 Q1 4 5 3 LargeN C1 5 11 3E-9 R5 11 3 10 R2 5 6 10E3 D1 6 8 Dmod R3 7 6 1 V2 8 3 10 E1 7 3 4 9 1000 V1 10 1 100e-3 I2 9 10 100E-3 R4 9 10 Rmod2 1 .MODEL Dmod D IS=1E-15 BV=20 IBV=1E-3 .MODEL LargeN NPN IS=3.8E-16 LOT/1/UNIFORM=50% DEV/GAUSS=1% + BF=220 LOT/1/UNIFORM=50% DEV/GAUSS=1% NK=.75 IKF=17e-3 VAF=60 + ISE=1.8E-16 NE=1.4 BR=.7 IKR=3e-2 VAR=7 ISC=5E-12 NC=1.321 RB=300 + RE=19.7 RC=63.4 CJC=51E-12 MJC=.42 VJC=.595 CJE=.21E-12 MJE=.33 + VJE=.7 TF=1.5E-10 TR=6E-9 XTF=0.3 VTF=6 ITF=5E-5 XTB=1.17 XTI=5.4 + KF=2E-13 AF=1.4 .MODEL Rmod1 RES (R=99.5 TC1=1E-3 TC2=1E-5 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .MODEL Rmod2 RES (R=1 LOT/1/UNIFORM=1% DEV/GAUSS=0.5%) .ENDS * *$ * ZXCT1010*TITLE=ZXCT1010 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=14th July 2010 *VERSION=1 *PIN_ORDER 2:GND, 3:OUT, 4:S+, 5:S- (Pin 1 is NC) * .subckt ZXCT1010 GND OUT S+ S- * pins------------2---3--4--5 * R1 S- FILT 100k ;input filter C1 S+ FILT 20p ;input filter R2 S+ GND 1Meg ;quiescent current at 5V * Output as a voltage: first part of expression limits resonse to zero for negative input * tanh function limits output when supply is less than 1.1V above Vout E1 E1OUT GND VALUE={ max(V(S+)-V(FILT),0)*tanh( 20*max(V(S-)-1.1-V(OUT),0) ) } R3 E1OUT GND 1Meg * Transconductance = 1/100 A/V, with temperature dependence G1 S+ OUT VALUE={(V(E1OUT) - V(GND))*(1/100)*(1.01-0.0003*TEMP-6e-6*(TEMP**2)-5e-8*(TEMP**3)+2.7e-10*(TEMP**4))} .ends ZXCT1010 * * * (c) 2010 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * ZXCT1030*TITLE=ZXCT1030 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=14th June 2010 *VERSION=1 *PIN_ORDER 1:VCC, 2:VS-, 3:VS+, 4:GND, 5:COMPIN, 6:REF, 7:OUT, 8:COMPOUT * .subckt ZXCT1030 VCC VS- VS+ GND COMPIN REF OUT COMPOUT * pins------------1--2----3---4---5------6---7----8 * *Voltage reference R1 REFG REF 34 V1 REFG GND 1.24 * * Current sense amplifier limited by supply voltage R2 GND VCC 58k ;quiescent current at 5V R3 VS- AIN- 100k ;input filter C1 VS+ AIN- 1p ;input filter G1 VS+ OUT VALUE={ max(V(VS+)-V(AIN-),0)/150*tanh ( 20*max(V(VS+)-1.1-V(OUT),0) ) } R4 OUT GND 1.5k ;output resistance * *Comparator with VS- undervoltage detection and limited by supply voltage E2 DELTA GND VALUE = { V(OUT)-V(COMPIN)+0.015*V(E3OUT) } R5 DELTA COMPINT 1k ; delay filter C2 COMPINT GND 150p ; delay filter E3 E3OUT GND VALUE={ 0.5*(1+tanh(V(COMPINT)*10000)) } E4 S1IN GND VALUE={ ( V(E3OUT)+tanh(20*max(2.1-V(VS-),0)) )*tanh(20*max(V(VCC)-2.1,0)) } * *Output transistor open collector S1 COMPOUT GND S1IN GND _S1 .MODEL _S1 VSWITCH Roff=10e6 Ron=300 Voff=0.25 Von=0.75 * .ends ZXCT1030 * * (c) 2010 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * * ZXCT1080* *Zetex ZXCT1080 Spice Model v2.0 Last Revised 28/04/08 * .SUBCKT ZXCT1080 1 2 3 4 5 * *Pins = Gnd, Vcc, S+, S-, Vout * R1 2 1 1E6 R2 4 1 1E8 R3 13 14 1000 R4 15 5 Rmod1 3.5 R5 16 12 9 R6 12 1 Rmod2 1 R7 3 1 1E6 R8 21 22 Rmod3 1 C1 14 1 3E-10 E1 16 1 value={((V(3)-V(4))*100)+(V(3)/466*(V(3)-V(4))+((V(2)-5)/100)+0.025+(V(21)*10))} E2 13 1 value={V(12)-((V(12)-V(2))*(TANH((V(12)-V(2))*110)+1)/2)} E3 15 1 value={V(14)*((TANH(V(14)*100)+1)/2)} I1 1 21 1 V1 1 22 1 .MODEL Rmod1 RES (TC1=6e-3 ) .MODEL Rmod2 RES (TC1=5e-6 ) .MODEL Rmod3 RES (TC1=5e-5 ) .ENDS ZXCT1080 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZXCT1082*TITLE=ZXCT1082 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=1st Sept 2011 *VERSION=2 *PIN_ORDER 1:OUT 2:GND, 3:S+, 4:S-, 5:VCC *Does not include temperature dependence of offset error, gain or input current. *Includes roughly approximated temperature effect of low voltage operating knee of VS- and VCC. .subckt ZXCT1082 OUT GND S+ S- VCC * pins------------1---2---3---4---5 .PARAM VTH1 = {1-0.004*(TEMP-25)} .PARAM KG ={1e-4/(2-VTH1)**2} ; rnom/(VON-VTH1)^2 D1 S+ 1 DHM D2 1 S- DHM D3 S- 2 DHM D4 2 S+ DHM D7 GND VCC DHM D8 GND S- DHM D9 GND S+ DHM *input current typ 1.7uA at Vcc=VS+=12V G1 S+ GND value={(1.4u+((V(VCC)-V(GND)-4)/42e6)+((V(S+)-V(GND))/6e8)) + *0.25*(1+tanh(10*(V(VCC)-V(GND)-3.5)))*(1+tanh(20*(V(S+)-V(GND)-1)))} G2 S- GND value={(1.4u+((V(VCC)-V(GND)-4)/42e6)+((V(S+)-V(GND))/6e8)) + *0.25*(1+tanh(10*(V(VCC)-V(GND)-3.5)))*(1+tanh(20*(V(S+)-V(GND)-1)))} R1 S+ FILT 10k ;input filter C1 FILT S- 1pf ;input filter R2 VCC GND 3.75Meg ;Vcc quiescent current, typ 16uA at 60V G3 S- SIN VALUE={0.1*((1+tanh(10*(V(S-)-V(FILT))))*tanh(50*max(V(S-)-V(SIN),0)) + +(-1+tanh(10*(V(S-)-V(FILT))))*tanh(50*max(V(SIN)-V(GND),0))) + *tanh(20*max(V(VCC)-VTH1,0))} C5 S- GND 3p C6 S+ GND 2p C4 SIN FILT 100f R3 S+ SIN 1G C2 SIN S+ 500f R6 S+ S+A 1k G4 S+A OUT VALUE={KG*(max(V(S+A)-V(SIN)-VTH1,0)**2)*(V(S+A)-V(OUT))} R4 S+ OUT 8G C3 SIN OUT 80f C7 OUT GND 1.25p * zener diode D5 SIN S+ DHM D6 S+ Z1 DHM I1 SIN Z1 0.192 RZ Z1 SIN 100 .model DHM D IS=6.3E-16 BV=65 .ends ZXCT1082 * * (c) 2011 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA ZXGD3001E6* *Zetex ZXGD3001E6 Spice Model v2.0 Last Revised 17/09/08 * .SUBCKT ZXGD3001E6 1 2 3 4 5 6 *pins Vcc, In1, Gnd, Sink, In2, Source Q1 1 2 6 ZXGD3001N Q2 3 5 4 ZXGD3001P * .MODEL ZXGD3001N NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 + BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 + CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 + XTB=1.4 * .MODEL ZXGD3001P PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13 + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010 + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35 + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * .ENDS ZXGD3001E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZXGD3002E6* *Zetex ZXGD3002E6 Spice Model v2.0 Last Revised 17/09/08 * .SUBCKT ZXGD3002E6 1 2 3 4 5 6 *pins Vcc, In1, Gnd, Sink, In2, Source Q1 1 2 6 ZXGD3002N Q2 3 5 4 ZXGD3002P * .MODEL ZXGD3002N NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4 + BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085 + CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 + RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4 * .MODEL ZXGD3002P PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49 + NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9 + GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10 + TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 * .ENDS ZXGD3002E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZXGD3003E6* *Zetex ZXGD3003E6 Spice Model v2.0 Last Revised 17/09/08 * .SUBCKT ZXGD3003E6 1 2 3 4 5 6 *pins Vcc, In1, Gnd, Sink, In2, Source Q1 1 2 6 ZXGD3003N Q2 3 5 4 ZXGD3003P * .MODEL ZXGD3003N NPN IS=2.5E-13 NF=1 BF=600 IKF=1 VAF=51 ISE=2E-13 +NE=1.4 NR=1 BR=150 IKR=.5 VAR=25 ISC=1e-13 NC=1.47 RB=0.5 +RE=0.055 RC=0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF=0.8E-9 +TR=30e-9 * .MODEL ZXGD3003P PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 + ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 + RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 + VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 * .ENDS ZXGD3003E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZXGD3004E6* *Zetex ZXGD3004E6 Spice Model v2.0 Last Revised 17/09/08 * .SUBCKT ZXGD3004E6 1 2 3 4 5 6 *pins Vcc, In1, Gnd, Sink, In2, Source Q1 1 2 6 ZXGD3004N Q2 3 5 4 ZXGD3004P * .MODEL ZXGD3004N NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * .MODEL ZXGD3004P PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 * .ENDS ZXGD3004E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZXGD3005E6*TITLE=ZXGD3005 MACROMODEL *DATE=26Jan2012 *ORIGIN=DZSL_DPG_SU *SIMULATOR=DIODES, SIMETRIX and PSPICE *VERSION=1 .SUBCKT ZXGD3005 VCC IN VEE SINK SOURCE LIN IN 6 2n RIN 6 7 1 D1 7 8 DMOD D2 9 7 DMOD RI1 7 8 1000K RI2 9 7 1000K CI1 7 8 5.5p CI2 9 7 5.5p RO1 8 10 100K R02 9 11 100K RsourceI 10 12 1.5 RsinkI 11 13 1.5 D3 12 8 DMOD D4 9 13 DMOD LCC VCC 8 2n LEE VEE 9 2n Lsource 12 SOURCE 1n Lsink 13 SINK 1n G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))} G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))} .MODEL DMOD D(IS=8p BV=30) .ENDS .SIMULATOR DEFAULT * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXGD3006E6*TITLE=ZXGD3006 MACROMODEL *DATE=26Jan2012 *ORIGIN=DZSL_DPG_SU *SIMULATOR=DIODES, SIMETRIX and PSPICE *VERSION=1 .SUBCKT ZXGD3006 VCC IN VEE SINK SOURCE LIN IN 6 2n RIN 6 7 1 D1 7 8 DMOD D2 9 7 DMOD RI1 7 8 1000K RI2 9 7 1000K CI1 7 8 5.5p CI2 9 7 5.5p RO1 8 10 100K R02 9 11 100K RsourceI 10 12 1.5 RsinkI 11 13 1.5 D3 12 8 DMOD D4 9 13 DMOD LCC VCC 8 2n LEE VEE 9 2n Lsource 12 SOURCE 1n Lsink 13 SINK 1n G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))} G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))} .MODEL DMOD D(IS=8p BV=44) .ENDS .SIMULATOR DEFAULT * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXGD3006E6Q*TITLE=ZXGD3006 MACROMODEL *DATE=04Feb2015 *ORIGIN=DZSL_DPG_SU *SIMULATOR=DIODES, SIMETRIX and PSPICE *VERSION=1 .SUBCKT ZXGD3006E6Q VCC IN VEE SINK SOURCE LIN IN 6 2n RIN 6 7 1 D1 7 8 DMOD D2 9 7 DMOD RI1 7 8 1000K RI2 9 7 1000K CI1 7 8 5.5p CI2 9 7 5.5p RO1 8 10 100K R02 9 11 100K RsourceI 10 12 1.5 RsinkI 11 13 1.5 D3 12 8 DMOD D4 9 13 DMOD LCC VCC 8 2n LEE VEE 9 2n Lsource 12 SOURCE 1n Lsink 13 SINK 1n G1 8 10 VALUE={1.39e-11*exp((V(7)-V(10))/.0032)*.5*(1+tanh(10*MAX(V(8)-V(7),0)))} G2 11 9 VALUE={1.39e-11*exp((V(11)-V(7))/.0032)*.5*(1-tanh(10*MAX(V(9)-V(7),0)))} .MODEL DMOD D(IS=8p BV=44) .ENDS .SIMULATOR DEFAULT * (c) 2015 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXGD3105N8*DIODES_INC_SPICE_MODEL ZXGD3105 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2012 *VERSION=1 .SUBCKT ZXGD3105 1 2 3 4 5 6 7 8 L1 1 11 2n L2 7 12 2n Din 3 4 DMOD1 Rin 3 12 30000 *Dx 3 5 DMOD D1 3 11 DMOD D2 12 3 DMOD Q1 5 3 12 NMOD G1 11 13 VALUE={1.38e-11*(exp((V(30)-V(13))/.0026))} G2 14 12 VALUE={1.38e-11*(exp((V(14)-V(30))/.0026))} R01 11 13 1000000 R02 14 12 1000000 R03 13 8 2 R04 14 8 1.2 D3 8 11 DMOD D4 12 8 DMOD R1 5 30 10 C2 30 12 8p CS 30 8 2p .MODEL DMOD D(IS=8n BV=30) .MODEL DMOD1 D(IS=200E-15 RS=59.7m + CJO=.6p VJ=.42 M=0.36 N=1.35 TT=7n) .MODEL NMOD NPN(IS=1.25E-15 BF=11 NF=1 ISE=6E-16 NE=1.15 CJC=2.56E-12 VJC=.72 MJC=.21 CJE=3.72E-12 VJE=.72 MJE=.24 TR=.1E-9) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXGD3105N8*DIODES_INC_SPICE_MODEL ZXGD3105 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=29Nov2012 *VERSION=1 .SUBCKT ZXGD3105 1 2 3 4 5 6 7 8 L1 1 11 2n L2 7 12 2n Din 3 4 DMOD1 Rin 3 12 30000 *Dx 3 5 DMOD D1 3 11 DMOD D2 12 3 DMOD Q1 5 3 12 NMOD G1 11 13 VALUE={1.38e-11*(exp((V(30)-V(13))/.0026))} G2 14 12 VALUE={1.38e-11*(exp((V(14)-V(30))/.0026))} R01 11 13 1000000 R02 14 12 1000000 R03 13 8 2 R04 14 8 1.2 D3 8 11 DMOD D4 12 8 DMOD R1 5 30 10 C2 30 12 8p CS 30 8 2p .MODEL DMOD D(IS=8n BV=30) .MODEL DMOD1 D(IS=200E-15 RS=59.7m + CJO=.6p VJ=.42 M=0.36 N=1.35 TT=7n) .MODEL NMOD NPN(IS=1.25E-15 BF=11 NF=1 ISE=6E-16 NE=1.15 CJC=2.56E-12 VJC=.72 MJC=.21 CJE=3.72E-12 VJE=.72 MJE=.24 TR=.1E-9) .ENDS * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXM61N02F*ZETEX ZXM61N02F Spice Model v1.0 Last Revised 24/2/04 * .SUBCKT ZXM61N02F 3 4 5 *----connections----D-G-S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RMOD1 0.03 RS 8 5 RMOD1 0.0225 RL 3 5 35E6 C1 2 8 158E-12 C3 15 14 175E-12 C4 16 8 183E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 -1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=1.35 IS=1E-15 KP=5.5 CBD=90E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.95 IS=1E-15 KP=0.055 .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=24 IBV=1E-6 TT=9e-9 .MODEL DMOD2 D CJO=190e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=2.5E-3 TC2=1.8E-5) .MODEL RMOD2 RES (TC1=3.3E-3 TC2=1.5E-6) .ENDS ZXM61N02F * *$ * ZXM61N03F*ZETEX ZXM61N03F Spice Model v1.0 Last Revised 23/1/03 * .SUBCKT ZXM61N03F 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RDSMOD 0.15 RS 8 5 RDSMOD 0.024 RL 3 5 35E6 C1 2 8 135E-12 C2 2 3 17E-12 C3 15 14 175E-12 C4 16 8 183E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=2.5 CBD=85E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.02 .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=38 IBV=1E-6 TT=9e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXM61N03F * *$ * ZXM61P02F*ZETEX ZXM61P02F Spice Model v1.0 Last Revised 24/2/04 * .SUBCKT ZXM61P02F 3 4 5 *---connections---D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 8 RIN 2 8 200E6 RD 3 6 RDSMOD 0.09 RS 8 5 RDSMOD 0.068 RL 3 5 35E6 C1 2 8 207E-12 C3 15 14 267E-12 C4 16 8 294E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD PMOS VTO=-1.6 IS=1E-15 KP=2.1 CBD=102E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-1.2 IS=1E-15 KP=0.21 PB=1 .MODEL DMOD1 D IS=3E-13 RS=0.13 N=1.01 BV=24 TT=2e-8 .MODEL DMOD2 D CJO=110e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=2.4E-3 TC2=1.5E-5) .MODEL RMOD2 RES (TC1=0.9E-3 TC2=1.5E-6) .ENDS ZXM61P02F * *$ * ZXM61P03F*ZETEX ZXM61P03F Spice Model v1.0 Last Revised 23/2/04 * .SUBCKT ZXM61P03F 3 4 5 *----connections----D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 8 RIN 2 8 200E6 RD 3 6 RDSMOD 0.12 RS 8 5 RDSMOD 0.09 RL 3 5 35E6 C1 2 8 162E-12 C3 15 14 210E-12 C4 16 8 230E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD PMOS VTO=-2.1 IS=1E-15 KP=1.4 CBD=102E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-1.7 IS=1E-15 KP=0.018 PB=1 .MODEL DMOD1 D IS=6E-13 RS=0.1 N=1.01 BV=36 TT=1e-8 .MODEL DMOD2 D CJO=86e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=1.5E-5) .MODEL RMOD2 RES (TC1=2.2E-3 TC2=3E-6) .ENDS ZXM61P03F * *$ * ZXM62N03G*ZETEX ZXM62N03G Spice Model v1.0 Last Revised 24/1/03 * .SUBCKT ZXM62N03G 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RIN 2 8 200E6 RD 3 6 RDSMOD 0.051 RS 8 5 RDSMOD 0.0093 RL 3 5 35E6 C1 2 8 349E-12 C2 2 3 43E-12 C3 15 14 453E-12 C4 16 8 474E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=6.5 CBD=221E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.04 .MODEL DMOD1 D IS=2.6E-13 RS=0.058 BV=38 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXM62N03G * *$ * ZXM62P02E6*ZETEX ZXM62P02E6 Spice Model v1.0 Last Revised 9/8/05 * .SUBCKT ZXM62P02E6 30 40 50 *----connections----D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 11 RIN 2 8 200E6 RD 3 6 RDSMOD 0.04 RS 8 5 RDSMOD 0.025 RL 3 5 35E6 C1 2 8 390E-12 C3 15 14 450E-12 C4 16 8 550E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL MOSMOD PMOS VTO=-1.50 IS=1E-15 KP=3.8 CBD=245E-12 PB=1 LAMBDA=4.9E-2 .MODEL MOSMODS PMOS VTO=-1.20 IS=1E-15 KP=0.04 PB=1 .MODEL DMOD1 D IS=4E-12 RS=0.05 N=1.04 BV=23 TT=1e-8 .MODEL DMOD2 D CJO=206e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=4E-3 TC2=7E-6) .MODEL RMOD2 RES (TC1=2E-3 TC2=2.5E-6) .ENDS ZXM62P02E6 * *$ * ZXM62P03E6*ZETEX ZXM62P03E6 Spice Model v1.0 Last Revised 26/7/05 * .SUBCKT ZXM62P03E6 30 40 50 *----connections----D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RDSMOD 0.07 RS 8 5 RDSMOD 0.037 RL 3 5 35E6 C1 2 8 390E-12 C3 15 14 450E-12 C4 16 8 550E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL MOSMOD PMOS VTO=-2.22 IS=1E-15 KP=4.1 CBD=245E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-1.9 IS=1E-15 KP=0.04 PB=1 .MODEL DMOD1 D IS=4E-13 RS=0.05 N=1.04 BV=36 TT=1e-8 .MODEL DMOD2 D CJO=206e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=4E-3 TC2=7E-6) .MODEL RMOD2 RES (TC1=2.2E-3 TC2=3E-6) .ENDS ZXM62P03E6 * *$ * ZXM64N02X*ZETEX ZXM64N02X Spice Model v1.0 Last Revised 10/01/2005 * .SUBCKT ZXM64N02X 3 4 5 *----connections----D-G-S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 1.7 RIN 2 8 200E6 RD 3 6 RDSMOD 0.02 RS 8 5 RDSMOD 0.004 RL 3 5 35E6 C1 2 8 1000E-12 C2 2 3 130E-12 C3 15 14 1150E-12 C4 16 8 1100E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 20 2 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=1.29 IS=1E-15 KP=35 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.35 .MODEL DMOD1 D IS=6E-13 RS=0.025 BV=22 CJO=750E-12 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=2.3E-3 TC2=0.8E-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS ZXM64N02X * *$ * ZXM64P03X*ZETEX ZXM64P03X Spice Model v1.1 Last Revised 11/7/05 * .SUBCKT ZXM64P03X 3 4 5 *----connections----D G S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 41 2 9 RIN 2 8 200E6 RD 31 6 RDSMOD 0.02 RS 8 51 RDSMOD 0.015 RL 3 5 35E6 C1 2 8 810E-12 C3 15 14 1050E-12 C4 16 8 1150E-12 D1 3 5 DMOD1 D2 3 17 DMOD2 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 31 1E-9 LG 4 41 1E-9 LS 5 51 1E-9 .MODEL MOSMOD PMOS VTO=-2.4 IS=1E-15 KP=8 CBD=512E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD1 D IS=6E-13 RS=0.02 N=1.01 TT=1e-8 .MODEL DMOD2 D CJO=430e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=1.5E-5) .ENDS ZXM64P03X * *$ * ZXM66P02N8*ZETEX ZXM66P02N8 Spice Model v2.0 Last revision 15/3/07 * .SUBCKT ZXM66P02N8 3 4 5 *----connections----D G S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 41 2 4.7 RIN 2 8 200E6 RD 31 6 RDSMOD 0.001 RS 8 51 RDSMOD 0.009 RL 3 5 350E6 C1 2 8 1435E-12 C2 3 2 940E-12 C3 15 14 4758E-12 C4 16 8 5008E-12 D1 3 5 DMOD1 Egt1 2 20 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 31 1.3E-9 LG 4 41 1.2E-9 LS 5 51 1.2E-9 .MODEL MOSMOD PMOS VTO=-1.26 IS=1E-15 KP=30.5 PB=1 LAMBDA=4.9E-2 .MODEL MOSMODS PMOS VTO=-.75 IS=1E-15 KP=0.15 PB=1 .MODEL DMOD1 D IS=2.5E-11 RS=0.005 N=1.01 IKF=.2 TT=1e-8 BV=25 CJO=5400E-12 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-0.75 VOFF=1.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.75 VOFF=-0.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-4.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-4.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=3E-6) .MODEL RMOD2 RES (TC1=1.195E-3 TC2=3E-6) .ENDS * *$ * ZXM66P03N8*ZETEX ZXM66P03N8 Spice Model v1.0 Last Revised 31/10/07 * .SUBCKT ZXM66P03N8 3 4 5 *----connections----D G S * M1 6 2 8 8 MOSMOD M2 6 41 8 8 MOSMODS RG 41 2 5 RIN 2 8 100E6 RD 31 6 RMOD1 0.005 RS 8 51 RMOD1 0.018 RL 3 5 350E6 C1 2 8 800E-12 C2 6 2 900E-12 C3 15 14 3300E-12 C4 16 8 2000E-12 D1 3 5 DMOD1 Egt1 42 41 21 8 1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 S1 2 15 13 14 SMOD1a S2 13 15 13 14 SMOD1b S3 16 13 8 13 SMOD2a S4 16 2 8 13 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 31 8 1 LD 3 31 1.3E-9 LG 4 42 1.2E-9 LS 5 51 1.2E-9 .MODEL MOSMOD PMOS VTO=-2.33 IS=1E-15 KP=50 CBD=1E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS PMOS VTO=-1.75 IS=1E-15 KP=10 PB=1 .MODEL DMOD1 D IS=1.2E-12 RS=0.012 TT=2.5e-8 BV=35 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=1.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=3E-3 TC2=8E-6) .MODEL RMOD2 RES (TC1=3E-3 TC2=2E-6) .ENDS ZXM66P03N8 * *$ * ZXMC10A816N8*DIODES_INC_SPICE_MODEL ZXMC10A816N8 *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Sep2014 *VERSION=1 ** Imported from: C:UserssuppuluriDesktopXMC10A816N8XMC10A816.txt ** PINS: 1=S1 , 2=G1, 3=S2, 4=G2, 5=D21, 6=D22, 7=D11, 8=D12 .SUBCKT ZXMC10A816N8 D11 G1 S1 D21 G2 S2 D12 D22 *NMOS M1 1 2 3 3 Nmod1 RD D11 1 Rmod1 90E-3 RS 23 3 Rmod1 84E-3 RG G1 22 10 RIN G1 23 2E11 RDS D11 23 2E9 CGS 2 3 370E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 380E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 D11 DSUB EL 2 22 1 3 0.0035 LS S1 23 2E-9 RL S1 S2 3E+10 .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.45 TOX=11E-8 NSUB=2.83E+15 KP=50 NFS=1E+12 IS=1E-15 N=10) .MODEL DCGD D (CJO = 8E-12 VJ = 0.6 M = 0.33 T_ABS=25) .MODEL DSUB D (IS =5E-12 N=1.08 RS=0.02 BV=105 CJO=200E-12 VJ=0.53 M=0.55 TT=40E-9 IKF=200m) .MODEL Rmod1 RES (TC1=1E-3 TC2=6E-6) *PMOS M2 4 5 6 6 Pmod1 RD2 D21 4 Rmod2 130E-3 RS2 53 6 Rmod2 84E-3 RG2 G2 52 240 RIN2 G2 53 2E11 RDS2 D21 53 2E9 CGS2 5 6 500E-12 EGD2 16 0 4 5 1 VFB2 18 0 0 FFB2 4 5 VFB2 1 CGD2 17 18 600E-12 R12 17 0 1 D12 16 17 DLIM DDG2 19 18 DCGD2 R22 16 19 1 D22 19 0 DLIM DSD2 D21 53 DSUB2 EL2 5 52 4 6 .0003 RL2 S2 53 3 LS2 S2 53 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-3.4 TOX=11E-8 NSUB=3.56E+16 KP=60 NFS=.1E+12 IS=1E-15 N=10) .MODEL DCGD2 D (CJO = 240E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB2 D (IS=1E-12 N=1 RS=0.012 BV=105 CJO=100E-12 VJ=0.45 M=0.33 TT=40E-9 IKF=140m TRS1=1.5m) .MODEL Rmod2 RES (TC1=2.6e-3 TC2=3E-6) *common model for PMOS and NMOS .MODEL DLIM D (IS=100U N=1 T_ABS=25) Rdrain1 D11 D12 .001m Rdrain2 D21 D22 .001m .ENDS * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXMC3AMC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMC3AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13 RG11 2 12 5 RIN11 12 13 1E12 RD11 11 15 Rmod1 0.08 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 11.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rmod1 RES (TC1=4.2e-3 TC2=1E-5) *Dev2 P-channel M21 21 22 23 23 Pmod2 L=1.2E-6 W=0.33 M22 23 22 23 21 Nmod2 L=1.4E-6 W=0.19 RG21 4 22 10 RIN21 22 23 1E9 RD21 21 25 Rmod2 0.05 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 5E-12 D21 25 23 Dmod2 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 1.2E-9 .MODEL Pmod2 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod2 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod2 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Rmod2 RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS * *$ ZXMD63C03X* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=02JUN2010 *VERSION=1 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMD63C03X 1 2 3 4 5 6 7 8 *Device1 M11 13 12 11 11 Mmod11 M12 13 12 11 11 Mmod12 R11 12 2 5 R12 12 11 2E9 R13 13 14 Rmod11 0.065 R14 11 15 Rmod11 0.012 R15 14 15 300E6 C11 12 11 269E-12 C12 12 14 33E-12 C13 16 17 300E-12 C14 18 11 365E-12 D11 15 14 Dmod11 S11 12 17 13 12 Smod11 S12 17 19 13 12 Smod12 S13 19 18 12 11 Smod13 S14 18 12 12 11 Smod14 E11 19 11 12 11 1 E12 16 11 14 11 1 L11 15 1 1E-9 L12 14 20 1E-9 R16 20 7 1E-3 R17 20 8 1E-3 * Device2 M21 23 22 21 21 Mmod21 R21 22 4 18 R22 23 21 300E6 R25 21 22 2E9 C21 22 21 450E-12 C22 23 22 35E-12 D21 23 21 Dmod21 L21 21 3 1E-9 L22 23 24 1E-9 R23 24 5 1E-3 R24 24 6 1E-3 * .MODEL Mmod11 NMOS VTO=2.2 IS=1E-15 KP=5 CBD=170E-12 LAMBDA=4.9E-3 .MODEL Mmod12 NMOS VTO=1.8 IS=1E-15 KP=0.033 .MODEL Dmod11 D IS=2E-13 RS=0.075 BV=38 IBV=1E-6 TT=21e-9 .MODEL Smod11 VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL Smod12 VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL Smod13 VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL Smod14 VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL Rmod11 RES (TC1=3E-3 TC2=2E-5) .MODEL Mmod21 PMOS VTO=-2.32 RS=0.09 RD=0.045 KP=4.2 +CBD=480E-12 LAMBDA=4.9E-3 .MODEL Dmod21 D IS=4E-13 N=1.04 IKF=295E-3 RS=94E-3 .ENDS * *$ ZXMD63N02X*ZETEX ZXMD63N02X Spice Model v1.0 Last Revised 3/7/00 * .SUBCKT ZXMD63N02X 3 4 5 * D G S M1 3 2 5 5 M63N02 RG 4 2 18 RL 3 5 1E9 C1 2 5 700E-12 C2 3 2 50E-12 D1 5 3 D63N02 * .MODEL M63N02 NMOS VTO=1.40 RS=0.04 RD=0.02 KP=15 +CBD=600E-12 LAMBDA=8.7E-3 .MODEL D63N02 D IS=4E-12 N=1.04 IKF=82E-3 RS=105E-3 .ENDS ZXMD63N02X * *$ * ZXMD63N03X*ZETEX ZXMD63N03X Spice Model v1.1 Last Revised 23/1/03 * .SUBCKT ZXMD63N03X 3 4 5 *----connections----D-G-S * M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RIN 2 8 200E6 RD 3 6 RDSMOD 0.065 RS 8 5 RDSMOD 0.012 RL 3 5 35E6 C1 2 8 269E-12 C2 2 3 33E-12 C3 15 14 349E-12 C4 16 8 365E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 .MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=5 CBD=170E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.033 .MODEL DMOD1 D IS=2E-13 RS=0.075 BV=38 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5) .ENDS ZXMD63N03X * *$ * ZXMD63P02X*ZETEX ZXMD63P02X Spice Model v1.0 Last Revised 18/8/00 * .SUBCKT ZXMD63P02X 3 4 5 * D G S M1 3 2 5 5 M63P02 RG 4 2 18 RL 3 5 1E9 C1 2 5 700E-12 C2 3 2 55E-12 D1 3 5 D63P02 * .MODEL M63P02 PMOS VTO=-1.37 RS=0.08 RD=0.04 KP=8 +CBD=700E-12 LAMBDA=9E-3 .MODEL D63P02 D IS=4E-12 N=1.04 IKF=44E-3 RS=96E-3 .ENDS ZXMD63P02X * *$ * ZXMD63P03X*ZETEX ZXMD63P03X Spice Model v1.0 Last Revised 18/8/00 * .SUBCKT ZXMD63P03X 3 4 5 * D G S M1 3 2 5 5 M63P03 RG 4 2 18 RL 3 5 1E9 C1 2 5 450E-12 C2 3 2 35E-12 D1 3 5 D63P03 * .MODEL M63P03 PMOS VTO=-2.32 RS=0.09 RD=0.045 KP=4.2 +CBD=480E-12 LAMBDA=4.9E-3 .MODEL D63P03 D IS=4E-13 N=1.04 IKF=295E-3 RS=94E-3 .ENDS ZXMD63P03X * *$ * ZXMHC3A01T8*ZETEX ZXMHC3A01T8 Spice Model v1.0 Last Revised 8/7/05 * .SUBCKT ZXMHC3A01T8 51 52 53 54 55 56 57 58 *connections *51=pin1=G3 *52=pin2=S2,S3 *53=pin3=G2 *54=pin4=G1 *55=pin5=D1,D2 *56=pin6=S1,S4 *57=pin7=D3,D4 *58=pin8=G4 * L1 1 51 2.3e-9 L2a 62 2 1.3e-9 L2b 72 2 1.3e-9 L2c 2 52 1e-9 L3 3 53 2.3e-9 L4 4 54 2.3e-9 L5 5 55 1.5e-9 L6a 66 6 1.3e-9 L6b 76 6 1.3e-9 L6c 6 56 1e-9 L7 7 57 1.5e-9 L8 8 58 2.3e-9 M11 16 12 62 62 Nnmod M12 62 12 62 16 Npmod RG1 3 12 5 RIN1 12 62 1E12 RD1 5 16 Nrmod 0.08 RL1 5 62 3E9 C11 12 62 8.5E-12 C21 5 3 3E-12 D11 62 5 Ndmod M21 26 22 72 72 Nnmod M22 72 22 72 26 Npmod RG2 1 22 5 RIN2 22 72 1E12 RD2 7 26 Nrmod 0.08 RL2 7 72 3E9 C12 22 72 8.5E-12 C22 7 1 3E-12 D12 72 7 Ndmod M31 36 32 66 66 Ppmod M32 66 32 66 36 Pnmod RG3 4 32 10 RIN3 32 66 1E9 RD3 5 36 Prmod 0.05 RL3 5 66 3E9 C13 32 66 8.5E-12 C23 5 4 5E-12 D13 5 66 Pdmod M41 46 42 76 76 Ppmod M42 76 42 76 46 Pnmod RG4 8 42 10 RIN4 42 76 1E9 RD4 7 46 Prmod 0.05 RL4 76 7 3E9 C14 42 76 8.5E-12 C24 7 8 5E-12 D14 7 76 Pdmod .MODEL Nnmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 L=1.16E-6 W=0.28 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Npmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 L=1.3E-6 W=0.13 +TPG=-1 IS=1E-15 N=10) .MODEL Ndmod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Nrmod RES (TC1=4.2e-3 TC2=1E-5) .MODEL Ppmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 L=1.2E-6 W=0.33 +VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pnmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 L=1.4E-6 W=0.19 +TPG=-1 IS=1E-15 N=10) .MODEL Pdmod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Prmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS * *$ * ZXMHC6A07N8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=15FEB2011 *VERSION=1 *PIN_ORDER ZXMHC6A07T8 * 1=N1G 8=P1G * 2=N1D/P1D 7=P1S/P2S * 3=N1S/P2S 6=N2D/P2D * 4=N2G 5=P2G * .SUBCKT ZXMHC6A07N8 1 2 3 4 5 6 7 8 X1 2 8 7 P6A13 X2 2 1 3 N6A07 X3 6 4 3 N6A07 X4 6 5 7 P6A13 .ENDS ZXMHC6A07N8 * .SUBCKT N6A07 3 4 5 M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34 M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 2 15E-12 D1 5 3 Dmod1 .MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS N6A07 * .SUBCKT P6A13 3 4 5 M1 6 2 5 5 Pmod L=1.2E-6 W=0.39 M2 5 2 5 6 Nmod L=1.4E-6 W=0.195 RG 4 2 3 RIN 2 5 1E9 RD 3 6 Rdmod 0.25 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16 +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3 +CJO=3.514e-11 BV=66) .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5) .ENDS P6A13 * *$ ZXMHC6A07T8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=14FEB2011 *VERSION=1 *PIN_ORDER ZXMHC6A07T8 * 1=G3 8=G4 * 2=S2S3 7=D3D4 * 3=G2 6=S1S4 * 4=G1 5=D1D2 * .SUBCKT ZXMHC6A07T8 1 2 3 4 5 6 7 8 X1 5 4 6 P6A13 X2 5 3 2 N6A07 X3 7 1 2 N6A07 X4 7 8 6 P6A13 .ENDS ZXMHC6A07T8 * .SUBCKT N6A07 3 4 5 M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34 M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 2 15E-12 D1 5 3 Dmod1 .MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS N6A07 * .SUBCKT P6A13 3 4 5 M1 6 2 5 5 Pmod L=1.2E-6 W=0.39 M2 5 2 5 6 Nmod L=1.4E-6 W=0.195 RG 4 2 3 RIN 2 5 1E9 RD 3 6 Rdmod 0.25 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16 +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3 +CJO=3.514e-11 BV=66) .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5) .ENDS P6A13 * *$ ZXMHN6A07T8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=15FEB2011 *VERSION=1 *PIN_ORDER * 1=G3 8=G4 * 2=G2 7=D3D4 * 3=S1S2 6=D2S3 * 4=G1 5=D1S4 * .SUBCKT ZXMHN6A07T8 1 2 3 4 5 6 7 8 X1 5 4 3 N6A07 X2 6 2 3 N6A07 X3 7 1 6 N6A07 X4 7 8 5 N6A07 .ENDS ZXMHN6A07T * .SUBCKT N6A07 3 4 5 M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34 M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 2 15E-12 D1 5 3 Dmod1 .MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS N6A07 * *$ ZXMN0545G4* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=16/10/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN0545G4 3 4 5 M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 55 RIN 2 8 200E6 RD 3 6 RMOD1 40 RS 8 5 RMOD1 2.5 RL 3 5 200E6 C1 2 8 160E-12 C2 17 3 2E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 Egs1 2 17 2 8 1 Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1 .MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3E-3 .MODEL DMOD2 D CJO=25E-12 IS=1E-30 N=10 .MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5) .MODEL RMOD2 RES (TC1=-2.5E-3 TC2=3.3E-6) .ENDS * *$ ZXMN10A07F*DIODES_INC_SPICE_MODEL ZXMN10A07F N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=18Dec2014 *VERSION=1 .SUBCKT ZXMN10A07F 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 200E-3 RG 20 22 2.6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 105E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6) .ENDS .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXMN10A07Z*DIODES_INC_SPICE_MODEL ZXMN10A07Z N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=1Jul2014 *VERSION=1 .SUBCKT ZXMN10A07Z 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 400E-3 RS 23 3 Rmod1 200E-3 RG 20 22 2.6 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 105E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 80E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.0015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3 IKF=.4) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6) .ENDS ZXMN10A08DN8*ZETEX ZXMN10A08DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A08DN8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1.5E-6 W=0.45 RG 4 2 3.2 RIN 2 5 1E12 RD 3 6 Rdmod 0.14 RL 6 5 10E9 C1 2 5 30E-12 C2 3 4 10E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=101) .MODEL Rdmod RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08DN8 * *$ * ZXMN10A08E6*ZETEX ZXMN10A08E6 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A08E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1.5E-6 W=0.45 RG 4 2 3.2 RIN 2 5 1E12 RD 3 6 Rdmod 0.14 RL 6 5 10E9 C1 2 5 30E-12 C2 3 4 10E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=101) .MODEL Rdmod RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08E6 * *$ * ZXMN10A08G* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/09 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN10A08G 1 2 3 M11 20 21 22 22 Nnmod1 L=1E-6 W=0.6 M12 22 21 22 20 Pnmod1 L=1.5E-6 W=0.45 RG1 21 27 3.2 RIN1 21 22 1E12 RD1 20 24 Rnmod1 0.14 RS1 22 23 1E-6 RL1 23 24 10E9 C11 21 22 65E-12 C12 20 21 10E-12 D1 23 24 Dnmod1 LD1 1 24 1.0E-9 LG1 2 27 2.3E-9 LS1 3 23 2.3E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05 +KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dnmod1 D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=110) .MODEL Rnmod1 RES (TC1=9.5e-3 TC2=2.5E-5) .ENDS ZXMN10A08G * *$ ZXMN10A09K*ZETEX ZXMN10A09K Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMN10A09K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.7 M2 5 2 5 6 Pmod L=1.5E-6 W=1.27 RG 4 2 0.7 RIN 2 5 1E12 RD 3 6 Rdmod 0.19 RL 6 5 10E9 C1 2 5 85E-12 C2 3 4 28E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.45 +KP=2.5E-5 RS=.0053 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5.6E-12 RS=.016 IKF=0.095 TRS1=1.5e-3 +CJO=338e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A09K * *$ * ZXMN10A11G*ZETEX ZXMN10A11G Spice Model v2.0 Last Revised 11/2/05 * * .SUBCKT ZXMN10A11G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.48 M2 5 2 5 6 Pmod L=1.5E-6 W=0.31 RG 4 2 2.9 RIN 2 5 1E12 RD 3 6 Rdmod 0.28 RL 6 5 10E9 C1 2 5 21E-12 C2 3 4 6.9E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.22 +KP=1.42E-5 RS=.023 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.6E-12 RS=0.03 IKF=0.047 TRS1=1.5e-3 +CJO=83e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A11G * *$ * ZXMN10A11K*ZETEX ZXMN10A11K Spice Model v2.0 Last Revised 24/10/07 * * .SUBCKT ZXMN10A11K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.48 M2 5 2 5 6 Pmod L=1.5E-6 W=0.31 RG 4 2 2.9 RIN 2 5 1E12 RD 3 6 Rdmod 0.28 RL 6 5 10E9 C1 2 5 21E-12 C2 3 4 6.9E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.22 +KP=1.42E-5 RS=.023 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.6E-12 RS=0.03 IKF=0.047 TRS1=1.5e-3 +CJO=83e-12 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS ZXMN10A11K * *$ * ZXMN10A25G*ZETEX ZXMN10A25G Spice Model v1.0 Last Revised 24/10/07 * .SUBCKT ZXMN10A25G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.75 M2 5 2 5 6 Pmod L=1.5E-6 W=1.3 RG 4 2 1.5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 10E9 C1 2 5 200E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=10E-8 NSUB=1E17 VTO=3.7 +KP=2E-5 RS=0.01 NFS=7e10 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=10E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-12 RS=.025 TRS1=1.5e-3 +CJO=240e-12 VJ=0.6 M=0.54 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7.5e-3 TC2=2.3E-5) .ENDS ZXMN10A25G * *$ * ZXMN10A25K*ZETEX ZXMN10A25K Spice Model v1.0 Last Revised 24/10/07 * .SUBCKT ZXMN10A25K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.75 M2 5 2 5 6 Pmod L=1.5E-6 W=1.3 RG 4 2 1.5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 10E9 C1 2 5 200E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=10E-8 NSUB=1E17 VTO=3.7 +KP=2E-5 RS=0.01 NFS=7e10 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=10E-8 NSUB=2E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-12 RS=.025 TRS1=1.5e-3 +CJO=240e-12 VJ=0.6 M=0.54 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7.5e-3 TC2=2.3E-5) .ENDS ZXMN10A25K * *$ * ZXMN10B08E6*ZETEX ZXMN10B08E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN10B08E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=0.75 M2 5 2 5 6 Pmod L=1.5E-6 W=0.75 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.19 RL 3 5 10E9 C1 2 5 100E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=2E17 VTO=3.12 +KP=2.2E-5 RS=.015 NFS=6E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E15 TPG=-1 +IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=300e-12 TT=5e-9 BV=101) .MODEL Rdmod RES (TC1=7e-3 TC2=2.5E-5) .ENDS * *$ * ZXMN15A27K*DIODES_INC_SPICE_MODEL ZXMN15A25K *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=20Dec2011 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT zxmn15a27k 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 300E-3 RS 23 3 Rmod1 180E-3 RG 20 22 2 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 150E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 240E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.001 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=20E-8 NSUB=2.8E+15 KP=9.5 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 140E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1.85E-12 N=1.085 RS=0.022 BV=155 CJO=330E-12 VJ=0.42 M=0.5 TT=150E-9 TRS1=2.6E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=8e-3 TC2=8E-6) .ENDS .SIMULATOR DEFAULT ZXMN20B28K*DIODES_INC_SPICE_MODEL ZXMN20B28K *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=23Apr2014 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT ZXMN20B28K 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 530E-3 RS 23 3 Rmod1 120E-3 RG 20 22 20 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 450E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 800E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.00001 LS 30 23 3n .MODEL Nmod1 NMOS (LEVEL=3 VTO=2.2 TOX=5E-8 NSUB=1E+15 KP=150 NFS=15E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 130E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1.5E-12 N=1 RS=0.01 BV=210 IKF=.12 CJO=350E-12 VJ=0.42 M=0.5 TT=130E-9 TRS1=1.2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.2e-3 TC2=8E-6) .ENDS * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXMN2A01E6*ZETEX ZXMN2A01E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A01E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.46 M2 5 20 5 6 Pmod L=1.3E-6 W=0.22 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rmod1 0.036 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod2 RES (TC1=-3e-4 TC2=0) .ENDS * *$ * ZXMN2A01F*ZETEX ZXMN2A01F Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A01F 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.46 M2 5 20 5 6 Pmod L=1.3E-6 W=0.22 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rmod1 0.036 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod2 RES (TC1=-3e-4 TC2=0) .ENDS ZXMN2A01F * *$ * ZXMN2A02N8*ZETEX ZXMN2A02N8 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A02N8 30 40 50 *---connections---D-G-S M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.0045 RS 7 5 Rdmod 0.01 RL 3 5 3E9 C1 2 5 10E-12 C2 3 2 5E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16 +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9 +CJO=450e-12 BV=22) .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6) .ENDS * *$ * ZXMN2A02X8 (Not Recommended)* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=22/02/2005 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMN2A02X8 30 40 50 M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.0045 RS 7 5 Rdmod 0.01 RL 3 5 3E9 C1 2 5 10E-12 C2 3 2 5E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16 +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9 +CJO=450e-12 BV=22) .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6) .ENDS * *$ ZXMN2A03E6*ZETEX ZXMN2A03E6 Spice Model v1.0 Last Revised 11/08/05 * .SUBCKT ZXMN2A03E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rmod1 0.04 RL 3 5 3E9 C1 2 5 1.5E-10 C2 3 4 2.5E-10 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1.45 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=45E-9 NSUB=4.09E16 UO=929) +VTO=0.9 KP=34E-6 GAMMA=1.52 PHI=0.77 RS=0.02 KAPPA=0.01) .MODEL Pmod PMOS (LEVEL=3 L=0.6E-6 W=0.8 TOX=70E-9 NSUB=4.09E16 UO=373) .MODEL Dbodymod D (IS=2E-11 N=1 IKF=3 RS=0.05 TRS1=1E-5 TRS2=3E-5 XTI=0.1) .MODEL Rmod1 RES (TC1=0 TC2=0) .MODEL Rmod2 RES (TC1=3E-4 TC2=1E-7) .ENDS ZXMN2A03E6 * *$ * ZXMN2A14F*ZETEX ZXMN2A14F Spice Model v1.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A14F 30 40 50 *----connections-----D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.74 M2 5 20 5 6 Pmod L=1.3E-6 W=0.45 RG 4 2 3.5 RIN 2 5 1E12 RD 3 6 Rmod1 0.015 RL 3 5 3E12 C1 2 5 8.5E-12 C2 3 4 3.5E-12 D1 5 3 Dmod1 Egt1 20 2 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=5E16 +VTO=1.25 KP=10E-5 RS=.027 NFS=1E9 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-10 RS=.054 IKF=0.04 TRS1=1.5e-3 +CJO=600e-12 BV=23) .MODEL Rmod1 RES (TC1=8.2e-3 TC2=2.3E-5) .MODEL Rmod2 RES (TC1=-3E-4 TC2=0E-6) .ENDS ZXMN2A14F * *$ * ZXMN2AMC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMN2AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.46 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.22 RG11 2 16 5 RIN11 12 13 1E12 RD11 11 15 Rmod11 0.036 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 Egt11 16 12 17 13 1 Vgt11 13 18 1 Igt11 13 17 1 Rgt11 17 18 Rmod12 1 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 1.2E-9 *Dev2 N-channel M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.46 M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.22 RG21 4 26 5 RIN21 22 23 1E12 RD21 21 25 Rmod11 0.036 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 3E-12 Egt21 26 22 27 23 1 Vgt21 23 28 1 Igt21 23 27 1 Rgt21 27 28 Rmod12 1 D21 23 25 Dmod1 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 1.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod11 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod12 RES (TC1=-3e-4 TC2=0) .ENDS * *$ ZXMN2B01F* *Zetex ZXMN2B01F Spice Model v1.0 Last Revised 5/12/07 * .SUBCKT ZXMN2B01F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.55 M2 5 2 5 6 Pmod L=1.2E-6 W=0.22 RG 4 22 4.2 RIN 2 5 1E12 RD 3 6 Rmod1 0.05 RL 3 5 3E9 C1 2 5 10E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.66 +KP=7E-5 RS=.025 KAPPA=0.07 NFS=2E11 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=3e-3 TT=0.6E-8 +CJO=115e-12 BV=23) .MODEL Rmod1 RES (TC1=4.6e-3 TC2=0.9E-5) .MODEL Rmod2 RES (TC1=-1.4e-3 TC2=0E-5) .ENDS ZXMN2B01F * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ZXMN2B03E6* *Zetex ZXMN2B03E6 Spice Model v1.0 Last Revised 7/12/07 * .SUBCKT ZXMN2B03E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.83 M2 5 2 5 6 Pmod L=1.2E-6 W=0.67 RG 4 22 1.5 RIN 2 5 1E12 RD 3 6 Rmod1 0.015 RL 3 5 3E9 C1 2 5 10E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.8 +KP=7E-5 RS=.020 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-11 RS=.05 IKF=.5 TT=0.6E-8 +CJO=200e-12 BV=23) .MODEL Rmod1 RES (TC1=8e-3 TC2=0.9E-5) .MODEL Rmod2 RES (TC1=-1.2e-3 TC2=-1E-6) .ENDS ZXMN2B03E6 * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ZXMN2B14FH*ZETEX ZXMN2B14FH Spice Model v1.0 Last Revised 30/11/07 * .SUBCKT ZXMN2B14FH 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.1 M2 5 2 5 6 Pmod L=1E-6 W=0.55 RG 4 22 2.8 RIN 2 5 1E12 RD 3 6 Rmod1 0.03 RL 3 5 3E9 C1 2 5 300E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.84 +KP=3.7E-5 RS=.006 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-11 RS=.03 IKF=.5 TRS1=3e-3 TT=0.6E-8 +CJO=200e-12 BV=23) .MODEL Rmod1 RES (TC1=4.2e-3 TC2=0.8E-5) .MODEL Rmod2 RES (TC1=-0.9e-3 TC2=0E-5) .ENDS ZXMN2B14FH * *$ * ZXMN2F30FH*DIODES_INC_SPICE_MODEL ZXMN2F30FH N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=27Oct2014 *VERSION=1 .SUBCKT ZXMN2F30FH 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 15E-3 RS 23 3 Rmod1 10E-3 RG 20 22 10 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 20E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 36E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.015 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=1.95 KP=90 NFS=8E12 TOX=3.5E-8 NSUB=1E17 IS=1E-15 N=10) .MODEL DCGD D (CJO = 16E-12 VJ = 0.5 M = 0.43) .MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.003 BV=22 CJO=10E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=3E-3) .MODEL DLIM D (IS=100U N=1) .MODEL Rmod1 RES (TC1=3e-6 TC2=6E-6) .ENDS .SIMULATOR DEFAULT .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXMN2F34FH* *Zetex ZXMN2F34FH Spice Model v1.0 Last Revised 31/07/08 * .SUBCKT ZXMN2F34FH 3 4 5 *------connections-------D-G-S M1 6 20 8 8 Nmod RG 4 2 7 RD 3 6 Rmod1 0.025 RS 8 5 Rmod1 0.0033 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 200E-12 C2 2 3 40E-12 C3 15 14 270E-12 C4 16 8 230E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=1.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=1.574 KP=16 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.026 CJO=320E-12 VJ=0.55 M=0.45 TT=1e-9 TRS1=1e-4 BV=22) .MODEL Rmod1 RES (TC1=3.1e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-1.9e-3 TC2=-6E-6) .ENDS ZXMN2F34FH * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZXMN3A01E6*ZETEX ZXMN3A01E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN3A01E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.28 M2 5 2 5 6 Pmod L=1.3E-6 W=0.13 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5) .ENDS ZXMN3A01E6 * *$ * ZXMN3A01F*ZETEX ZXMN3A01F Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN3A01F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.28 M2 5 2 5 6 Pmod L=1.3E-6 W=0.13 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rdmod 0.08 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5) .ENDS ZXMN3A01F * *$ * ZXMN3A02N8*ZETEX ZXMN3A02N8 Spice Model v2.0 Last Revised 22/2/05 * * .SUBCKT ZXMN3A02N8 30 40 50 *----connections----D-G-S M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 3 RIN 2 5 1E12 RD 3 6 Rdmod 0.001 RS 7 5 Rdmod 0.018 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 2 3E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 VTO=2 +KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3 +CJO=1070e-12 BV=33) .MODEL Rdmod RES (TC1=4e-3 TC2=1E-5) .ENDS * *$ * ZXMN3A02X8*ZETEX ZXMN3A02X8 Spice Model v2.0 Last Revised 22/2/05 * * .SUBCKT ZXMN3A02X8 30 40 50 *----connections----D-G-S M1 6 2 7 7 Nmod M2 7 2 7 6 Pmod RG 4 2 3 RIN 2 5 1E12 RD 3 6 Rdmod 0.001 RS 7 5 Rdmod 0.018 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 2 3E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 L=1.16E-6 W=2.3 VTO=2 +KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 L=1.3E-6 W=1.3 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3 +CJO=1070e-12 BV=33) .MODEL Rdmod RES (TC1=4e-3 TC2=1E-5) .ENDS * *$ * ZXMN3A03E6*ZETEX ZXMN3A03E6 Spice Model v2.0 Last revision 15/03/07 * .SUBCKT ZXMN3A03E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rmod1 0.04 RL 3 5 1E8 C1 2 5 2E-11 C2 3 4 1E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1.0 Vgt1 5 22 1.0 Igt1 5 21 1.0 Rgt 21 22 Rmod2 1.8 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=60E-9 NSUB=2.58E16 UO=1022) +VTO=1.2 KP=65E-6 GAMMA=1.61 PHI=0.74 RS=0.035 KAPPA=0.03 NFS=2.0E12 RD=0.03) .MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=1.0 TOX=64E-9 NSUB=2.58E16 UO=396) .MODEL Dbodymod D (IS=1.5E-10 N=1.13 RS=0.06 IKF=0.3 XTI=0.1 TRS1=6E-3 +TIKF=6E-2 CJO=1E-12) .MODEL Rmod1 RES (TC1=1E-5 TC2=1E-6) .MODEL Rmod2 RES (TC1=4E-4 TC2=1E-6) .ENDS ZXMN3A03E6 * *$ * ZXMN3A04DN8*ZETEX ZXMN3A04DN8 Spice Model v2.0 Last Revised 15/03/07 * .SUBCKT ZXMN3A04DN8 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1.0 RIN 2 5 1E12 RD 3 6 Rmod1 0.01 RL 3 5 1E8 C1 2 5 6.2E-10 C2 3 4 1.5E-10 D1 5 3 Dbodymod Egt1 2 20 21 5 1.0 Vgt1 5 22 1.0 Igt1 5 21 1.0 Rgt 21 22 Rmod2 2.3 LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=2.183 TOX=64E-9 NSUB=3.07E16 +UO=389 RS=0.02 XJ=1.6e-6) .MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=2.183 TOX=64E-9 NSUB=1.07E16 +UO=429 TPG=-1) .MODEL Dbodymod D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 +XTI=0.1) .MODEL Rmod1 RES (TC1=1E-4 TC2=1E-6) .MODEL Rmod2 RES (TC1=-3E-4 TC2=-5E-6) .ENDS ZXMN3A04DN8 * *$ * ZXMN3A04K* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN3A04K 1 2 3 M11 20 21 22 22 Nnmod1 L=0.7E-6 W=2.183 M12 22 21 22 20 Pnmod1 L=1.2E-6 W=2.183 RG1 26 27 1.1 RIN1 21 22 1E12 RD1 20 24 Rnmod1 0.01 RS1 22 23 1E-6 RL1 23 24 1E8 C11 21 22 11E-10 C12 20 21 1E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1 Igt1 22 30 1 Rgt1 30 31 Rnmod2 2.3 LD1 1 24 1.3E-9 LG1 2 27 2.4E-9 LS1 3 23 2.4E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=64E-9 NSUB=3.07E16 UO=389 RS=0.02 XJ=1.6e-6) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=64E-9 NSUB=1.07E16 UO=429 TPG=-1) .MODEL Dnmod1 D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 XTI=0.1) .MODEL Rnmod1 RES (TC1=10.7E-3 TC2=-4E-5) .MODEL Rnmod2 RES (TC1=-2.6E-3 TC2=-5E-6) .ENDS * *$ ZXMN3A06DN8*ZETEX ZXMN3A06DN8 Spice Model v2.0 Last revision 15/3/07 * .SUBCKT ZXMN3A06DN8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.5 M2 5 2 5 6 Pmod L=1.3E-6 W=0.65 RG 4 2 2.5 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 300E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 55 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.5 +KP=1.25E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=158e-12 BV=33 TT=16e-9) .MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5) .ENDS ZXMN3A06DN8 * *$ * ZXMN3A14F*ZETEX ZXMN3A14F Spice Model v1.0 Last revision 31/5/06 * .SUBCKT ZXMN3A14F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.76 M2 5 2 5 6 Pmod L=1.3E-6 W=0.35 RG 4 2 4.5 RIN 2 5 1E12 RD 3 6 Rmod 0.04 RS 5 55 Rmod 0.015 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 55 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E16 VTO=2.13 +KP=2.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=150e-12 BV=33 TT=12e-9) .MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5) .ENDS ZXMN3A14F * *$ * ZXMN3AMC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMN3AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13 RG11 2 12 5 RIN11 12 13 1E12 RD11 11 15 Rdmod1 0.08 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 11.2E-9 *Dev2 N-channel M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.28 M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.13 RG21 4 22 5 RIN21 22 23 1E12 RD21 21 25 Rdmod1 0.08 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 3E-12 D21 23 25 Dmod1 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 11.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3 +KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=85e-12 BV=33) .MODEL Rdmod1 RES (TC1=4.2e-3 TC2=1E-5) .ENDS * *$ ZXMN3B04N8*ZETEX ZXMN3B04N8 Spice Model v2.0 Last Revised 15/3/07 * .SUBCKT ZXMN3B04N8 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=2.9 M2 5 2 5 6 Pmod L=1.3E-6 W=1.6 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.01 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=3E17 VTO=1.32 +KP=15E-5 RS=.008 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-11 RS=.01 IKF=.5 TRS1=3e-3 +CJO=85e-12 BV=33) .MODEL Rdmod RES (TC1=5.2e-3 TC2=1E-5) .ENDS ZXMN3B04N8 * *$ * ZXMN3B14F*ZETEX ZXMN3B14F Spice Model v1.0 Last revision 6/1/06 * .SUBCKT ZXMN3B14F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=0.7E-6 W=1.3 M2 5 2 5 6 Pmod L=1.3E-6 W=0.34 RG 4 2 2.8 RIN 2 5 1E12 RD 3 6 Rdmod 0.03 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=5E16 VTO=1.24 +KP=1.5E-5 RS=.01 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.7E-8 NSUB=2.58E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1E-11 RS=.025 IKF=.5 TRS1=3e-3 TT=1.2E-8 +CJO=200e-12 BV=33) .MODEL Rdmod RES (TC1=4.9e-3 TC2=1E-5) .ENDS ZXMN3B14F * *$ * ZXMN3F31DN8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=210JUL2010 *VERSION=1 *------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1 * .SUBCKT ZXMN3F31DN8 P1 P2 P3 P4 P5 P6 P7 P8 *Device1 M11 106 103 108 108 Nmod R12 P2 102 2 R11 104 106 Rmod1 0.015 R13 108 105 Rmod1 0.005 R15 104 105 100E6 R16 102 105 100E6 D11 105 104 Dmod1 I11 108 121 1 V11 122 121 1 R17 122 108 Rmod2 1 E11 102 103 121 108 1 E12 113 108 102 108 1 E13 114 108 104 108 1 C11 102 108 549E-12 C12 102 104 129E-12 C13 115 114 390E-12 C14 116 108 400E-12 S11 102 115 114 113 SMOD1 S12 113 115 114 113 SMOD2 S13 116 113 113 108 SMOD3 S14 116 102 113 108 SMOD4 L11 P7 104 1E-9 L12 P1 105 1E-9 R18 P7 P8 0.001 *Device2 M21 206 203 208 208 Nmod R22 P4 202 2 R21 204 206 Rmod1 0.015 R23 208 205 Rmod1 0.005 R25 204 205 100E6 R26 202 205 100E6 D21 205 204 Dmod1 I21 208 221 1 V21 222 221 1 R27 222 208 Rmod2 1 E21 202 203 221 208 1 E22 213 208 202 208 1 E23 214 208 204 208 1 C21 202 208 549E-12 C22 202 204 129E-12 C23 215 214 390E-12 C24 216 208 400E-12 S21 202 215 214 213 SMOD1 S22 213 215 214 213 SMOD2 S23 216 213 213 208 SMOD3 S24 216 202 213 208 SMOD4 L21 P5 204 1E-9 L22 P3 205 1E-9 R28 P5 P6 0.001 * .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4 BV=33) .MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6) .ENDS ZXMN3F31DN8 * *$ ZXMN4A06G*ZETEX ZXMN4A06G Spice Model v3.0 Last Revised 4/12/07 * .SUBCKT ZXMN4A06G 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.7 M2 5 2 5 6 Pmod L=1.3E-6 W=0.75 RG 4 2 1.6 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 75E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 55 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75 +KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3 +CJO=250e-12 BV=44 TT=17e-9) .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5) .ENDS ZXMN4A06G * *$ * ZXMN4A06K*ZETEX ZXMN4A06K Spice Model v3.0 Last Revised 4/12/07 * .SUBCKT ZXMN4A06K 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.7 M2 5 2 5 6 Pmod L=1.3E-6 W=0.75 RG 4 2 1.6 RIN 2 5 1E12 RD 3 6 Rmod 0.012 RS 5 55 Rmod 0.012 RL 3 5 3E12 C1 2 5 75E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 55 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=7.5E-8 NSUB=5E16 VTO= 1.75 +KP=1.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-12 RS=.016 IKF=10 TRS1=1.5e-3 +CJO=250e-12 BV=44 TT=17e-9) .MODEL Rmod RES (TC1=3.5e-3 TC2=0.8E-5) .ENDS ZXMN4A06K * *$ * ZXMN6A07F*ZETEX ZXMN6A07F Spice Model v1.0 Last Revised 29/6/05 * .SUBCKT ZXMN6A07F 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=.6E-6 W=0.34 M2 5 2 5 6 Pmod L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 5 3 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS ZXMN6A07F * *$ * ZXMN6A07Z*ZETEX ZXMN6A07Z Spice Model v1.0 Last Revised 29/6/05 * .SUBCKT ZXMN6A07Z 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=.6E-6 W=0.34 M2 5 2 5 6 Pmod L=.6E-6 W=0.24 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.12 RL 6 5 10E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 5 3 Dbodymod LD 3 30 0.6E-9 LG 4 40 2.0E-9 LS 5 50 2.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6 +KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.5E-12 RS=.055 TRS1=1.5e-3 +CJO=71e-12 TT=24E-9 BV=66) .MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5) .ENDS ZXMN6A07Z * *$ * ZXMN6A08E6*ZETEX ZXMN6A08E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN6A08E6 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08E6 * *$ * ZXMN6A08G*ZETEX ZXMN6A08G Spice Model v2.0 Last Revised 24/10/07 * .SUBCKT ZXMN6A08G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08G * *$ * ZXMN6A08K* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=02/11/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN6A08K 30 40 50 M1 6 2 5 5 Nmod L=1E-6 W=0.6 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 2 4 RIN 2 5 1E12 RD 3 6 Rmod1 0.075 RL 6 5 10E9 C1 2 5 100E-12 C2 3 4 5E-12 D1 5 3 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25 +KP=1.8E-5 RS=0.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-12 RS=0.025 IKF=0.06 TRS1=1.5e-3 +CJO=120e-12 BV=61) .MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5) .ENDS ZXMN6A08K * *$ ZXMN6A09DN8*ZETEX ZXMN6A09DN8 Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09DN8 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09DN8 * *$ * ZXMN6A09G*ZETEX ZXMN6A09G Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09G 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09G * *$ * ZXMN6A09K*ZETEX ZXMN6A09K Spice Model v1.5 Last Revised 24/2/05 * .SUBCKT ZXMN6A09K 30 40 50 *------connections------D-G-S M1 6 2 8 8 MOSMOD M2 6 2 8 8 MOSMODS RG 4 2 5 RD 3 6 0.005 RS 8 5 0.005 RL 3 5 60E6 C1 2 8 1000E-12 C2 2 3 90E-12 C3 15 14 700E-12 C4 16 8 500E-12 D1 5 3 DMOD S1 2 15 14 13 SMOD1 S2 13 15 13 14 SMOD1 S3 16 13 13 8 SMOD2 S4 16 2 8 13 SMOD2 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL MOSMOD NMOS VTO=2.6 IS=1E-15 KP=11.4 CBD=412E-12 PB=1 .MODEL MOSMODS NMOS VTO=2 IS=1E-15 KP=0.1 PB=1 .MODEL DMOD D IS=6E-13 RS=.15 N=1.01 TT=4e-8 .MODEL SMOD1 VSWITCH RON=.1 ROFF=1E5 VON=0 VOFF=3 .MODEL SMOD2 VSWITCH RON=.1 ROFF=1E5 VON=-5 VOFF=-6 .ENDS ZXMN6A09K * *$ * ZXMN6A11DN8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=30/01/2009 *VERSION=1 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMN6A11DN8 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=0.8E-6 W=0.5 M12 22 21 22 20 Pnmod1 L=0.6E-6 W=0.45 RG1 26 27 4.5 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.08 RS1 22 23 1E-6 RL1 23 24 10E9 C11 21 22 220E-12 C12 20 21 1E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 24 25 1.5E-9 RP11 7 25 1E-6 RP12 8 25 1E-6 LG1 2 27 1.2E-9 LS1 1 23 1.2E-9 *Dev2 N-channel M21 60 61 62 62 Nnmod1 L=0.8E-6 W=0.5 M22 62 61 62 60 Pnmod1 L=0.6E-6 W=0.45 RG21 66 67 4.5 RIN2 61 62 2E12 RD2 60 64 Rnmod1 0.08 RS2 62 63 1E-6 RL2 63 64 10E9 C21 61 62 220E-12 C22 60 61 1E-12 D2 63 64 Dnmod1 Egt2 66 61 30 22 1 Vgt2 62 71 1.0 Igt2 62 70 1.0 Rgt2 70 71 Rnmod2 1 LD2 64 65 1.5E-9 RP21 5 65 1E-6 RP22 6 65 1E-6 LG2 4 67 1.2E-9 LS2 3 63 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rnmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rnmod2 RES (TC1=-1.04e-3 TC2=-2E-6) .ENDS * *$ ZXMN6A11G*ZETEX ZXMN6A11G Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN6A11G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5) .ENDS ZXMN6A11G * *$ * ZXMN6A11Z*ZETEX ZXMN6A11Z Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN6A11Z 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5 +RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63) .MODEL Rmod1 RES (TC1=5.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=1e-3 TC2=0E-5) .ENDS ZXMN6A11Z * *$ * ZXMN6A25DN8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=30/01/2009 *VERSION=1 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMN6A25DN8 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=1E-6 W=2 M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5 RG1 26 27 2 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.04 RS1 22 23 1e-6 RL1 23 24 10E9 C11 21 22 200E-12 C12 20 21 5E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 24 25 1.5E-9 RP11 7 25 1E-6 RP12 8 25 1E-6 LG1 2 27 1.2E-9 LS1 1 23 1.2E-9 *Dev2 N-channel M21 60 61 62 62 Nnmod1 L=1E-6 W=2 M22 62 61 62 60 Pnmod1 L=1E-6 W=1.5 RG2 66 67 2 RIN2 61 62 2E12 RD2 60 64 Rnmod1 0.04 RS2 62 63 1e-6 RL2 63 64 10E9 C21 61 62 200E-12 C22 60 61 5E-12 D2 63 64 Dnmod1 Egt2 66 61 30 22 1 Vgt2 62 71 1.0 Igt2 62 70 1.0 Rgt2 70 71 Rnmod2 1 LD2 64 65 1.5E-9 RP21 5 65 1E-6 RP22 6 65 1E-6 LG2 4 67 1.2E-9 LS2 3 63 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=66) .MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5) .MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6) .ENDS * *$ ZXMN6A25G*ZETEX ZXMN6A25G Spice Model v1.0 Last Revised 28/11/07 * .SUBCKT ZXMN6A25G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=2 M2 5 2 5 6 Pmod L=1E-6 W=1.5 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.04 RL 6 5 10E9 C1 2 5 200E-12 C2 3 4 5E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=63) .MODEL Rmod1 RES (TC1=5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-1.3e-3 TC2=0E-5) .ENDS ZXMN6A25G * *$ * ZXMN6A25K*ZETEX ZXMN6A25K Spice Model v1.0 Last Revised 28/11/07 * .SUBCKT ZXMN6A25K 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=1E-6 W=2 M2 5 2 5 6 Pmod L=1E-6 W=1.5 RG 4 22 2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.04 RL 6 5 10E9 C1 2 5 200E-12 C2 3 4 5E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=63) .MODEL Rmod1 RES (TC1=5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-1.3e-3 TC2=0E-5) .ENDS ZXMN6A25K * *$ * ZXMN6A25N8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=27/10/2008 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMN6A25N8 1 2 3 *Dev1 N-channel M11 20 21 22 22 Nnmod1 L=1E-6 W=2 M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5 RG1 26 27 2 RIN1 21 22 2E12 RD1 20 24 Rnmod1 0.04 RS1 22 23 1e-6 RL1 23 24 10E9 C11 21 22 200E-12 C12 20 21 5E-12 D1 23 24 Dnmod1 Egt1 26 21 30 22 1 Vgt1 22 31 1.0 Igt1 22 30 1.0 Rgt1 30 31 Rnmod2 1 LD1 1 24 1.3E-9 LG1 2 27 1.2E-9 LS1 3 23 1.2E-9 .MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5 +RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10) .MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=66) .MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5) .MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6) .ENDS * *$ ZXMN7A11G*ZETEX ZXMN7A11G Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN7A11G 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2.2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 +RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12 BV=73) .MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5) .ENDS ZXMN7A11G * *$ * ZXMN7A11K*ZETEX ZXMN7A11K Spice Model v1.0 Last Revised 29/11/07 * .SUBCKT ZXMN7A11K 30 40 50 *----connections-----D_G_S M1 6 2 5 5 Nmod L=0.8E-6 W=0.5 M2 5 2 5 6 Pmod L=1E-6 W=0.45 RG 4 22 2.2 RIN1 2 5 2E12 RIN2 22 5 2E12 RD 3 6 Rmod1 0.08 RL 6 5 10E9 C1 2 5 220E-12 C2 3 4 1E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=1.68 KP=1.6E-5 +RS=.005 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10) .MODEL Dmod1 D (IS=1.8E-13 RS=.023 TT=2e-8 CJO=90e-12 BV=73) .MODEL Rmod1 RES (TC1=4.5e-3 TC2=1.4E-5) .MODEL Rmod2 RES (TC1=-2e-3 TC2=0E-5) .ENDS ZXMN7A11K * *$ * ZXMP10A13F* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_SU *SIMULATOR=PSPICE *DATE=17/12/2014 *VERSION=1 .SUBCKT ZXMP10A13F 10 20 30 M1 1 2 3 3 Pmod1 RD 10 1 Rmod1 300E-3 RS 23 3 Rmod1 600E-3 RG 20 22 10 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 13E-12 EGD 12 0 1 2 1 REGD 12 0 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 8E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 23 DSUB EL 2 22 1 3 .009 RL 30 23 3 LS 30 23 2E-9 .MODEL Pmod1 PMOS (LEVEL=3 VTO=-4 TOX=10.4E-8 NSUB=3.5E+14 KP=38 NFS=13.7E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 8E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.29E-12 N=1.01 RS=0.05 BV=105 CJO=20E-12 VJ=0.45 M=0.33 TT=14E-9 TRS1=2m IKF=.5) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1.2e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXMP10A16K*ZETEX ZXMP10A16K Spice Model v1.0 Last Revised 21/11/07 * .SUBCKT ZXMP10A16K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.35E-6 W=1.68 M2 5 2 5 6 Nmod L=1.4E-6 W=1.15 RG 4 2 4.7 RIN 2 5 1E9 RD 3 6 Rdmod 0.1 RL 3 5 3E9 C1 2 5 50E-12 C2 3 4 1E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=0.3e16 +VTO=-3.2 KP=5.2e-6 RS=0.035 NFS=7.5E11 KAPPA=0.05 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-12 RS=0.027 CJO=125E-12 TT=66E-9 BV=105) .MODEL Rdmod RES (TC1=9e-3 TC2=1e-5) .ENDS ZXMP10A16K * *$ * ZXMP10A17E6* *Zetex ZXMP10A17E6 Spice model v1.0 Last revision 06/08/08 * .SUBCKT ZXMP10A17E6 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 4.2 RIN 2 5 1E9 RD 3 6 Rdmod 0.185 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15 + VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41 TT=5.2e-8 BV=110) .MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5) .ENDS ZXMP10A17E6 * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA ZXMP10A17G* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=17SEP2010 *VERSION=1 *------connections------- D, G, S .SUBCKT ZXMP10A17G 30 40 50 M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 4.2 RIN 2 5 1E9 RD 3 6 Rdmod 0.185 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15 + VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41 + TT=5.2e-8 BV=110) .MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5) .ENDS ZXMP10A17G * *$ ZXMP10A17K* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=17SEP2010 *VERSION=1 *------connections------- D, G, S .SUBCKT ZXMP10A17K 30 40 50 M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 4.2 RIN 2 5 1E9 RD 3 6 Rdmod 0.185 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15 + VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41 + TT=5.2e-8 BV=110) .MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5) .ENDS ZXMP10A17K * *$ ZXMP10A18G*ZETEX ZXMP10A18G Spice Model v1.0 Last Revised 22/11/07 * .SUBCKT ZXMP10A18G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.3E-6 W=2.64 M2 5 2 5 6 Nmod L=1.4E-6 W=2.0 RG 4 2 4.5 RIN 2 5 1E9 RD 3 6 Rdmod 0.55 RL 3 5 3E9 C1 2 5 50E-12 C2 3 4 1E-12 D1 3 5 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=1.2e16 +VTO=-3.54 KP=8e-6 RS=0.0182 NFS=11E11 KAPPA=0.05 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.3e-12 RS=0.025 CJO=25E-12 TT=65E-9 BV=105) .MODEL Rdmod RES (TC1=6e-3 TC2=1e-5) .ENDS ZXMP10A18G * *$ * ZXMP10A18K*ZETEX ZXMP10A18K Spice Model v1.0 Last Revised 22/11/07 * .SUBCKT ZXMP10A18K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.3E-6 W=2.64 M2 5 2 5 6 Nmod L=1.4E-6 W=2.0 RG 4 2 4.5 RIN 2 5 1E9 RD 3 6 Rdmod 0.55 RL 3 5 3E9 C1 2 5 50E-12 C2 3 4 1E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=11E-8 NSUB=1.2e16 +VTO=-3.54 KP=8e-6 RS=0.0182 NFS=11E11 KAPPA=0.05 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=11E-8 NSUB=3.6E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.3e-12 RS=0.025 CJO=25E-12 TT=65E-9 BV=105) .MODEL Rdmod RES (TC1=6e-3 TC2=1e-5) .ENDS ZXMP10A18K * *$ * ZXMP2120E5* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP2120E5 3 4 5 M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 + CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS * *$ ZXMP2120FF*ZETEX ZXMP2120FF Spice Model v1.0 Last Revised 09/02/07 * .SUBCKT ZXMP2120FF 3 4 5 * D G S M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 +CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS ZXMP2120FF * *$ * ZXMP2120G4* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP2120G4 3 4 5 M1 13 20 5 5 Pmod1 RG 4 2 100 RIN 2 5 1E9 RL 3 5 1.2E8 RD 3 13 Rmod1 22 C1 2 5 55E-12 D1 3 5 Dmod1 D2 3 17 Dmod2 Egs1 2 17 2 5 1 Egt1 2 20 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 .MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17 + CBD=60E-12 PB=1 LAMBDA=6E-3 .MODEL Dmod1 D IS=5E-12 RS=2 BV=220 .MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10 .MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5) .MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6) .ENDS * *$ ZXMP3A13F*ZETEX ZXMP3A13F Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A13F 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=0.33 M2 5 2 5 6 Nmod L=1.4E-6 W=0.19 RG 4 2 10 RIN 2 5 1E9 RD 3 6 Rdmod 0.05 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 5E-12 D1 3 5 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A13F * *$ * ZXMP3A16DN8*ZETEX ZXMP3A16DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A16DN8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 6 RIN 2 5 1E9 RD 3 6 Rdmod 0.015 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3 +CJO=50e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A16DN8 * *$ * ZXMP3A16G*ZETEX ZXMP3A16G Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A16G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 6 RIN 2 5 1E9 RD 3 6 Rdmod 0.015 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3 +CJO=50e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A16G * *$ * ZXMP3A16N8*ZETEX ZXMP3A16N8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A16N8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 6 RIN 2 5 1E9 RD 3 6 Rdmod 0.015 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.48 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=8E-13 RS=.022 IKF=0.1 TRS1=1.5e-3 +CJO=50e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A16N8 * *$ * ZXMP3A17DN8*ZETEX ZXMP3A17DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A17DN8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1 M2 5 2 5 6 Nmod L=1.4E-6 W=0.57 RG 4 2 7 RIN 2 5 1E9 RD 3 6 Rdmod 0.017 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.75 KP=.9E-5 RS=.025 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.8E-12 RS=.015 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A17DN8 * *$ * ZXMP3A17E6*ZETEX ZXMP3A17E6 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP3A17E6 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1 M2 5 2 5 6 Nmod L=1.4E-6 W=0.57 RG 4 2 7 RIN 2 5 1E9 RD 3 6 Rdmod 0.017 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 +VTO=-1.75 KP=.9E-5 RS=.025 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=0.8E-12 RS=.015 IKF=0.1 TRS1=1.5e-3 +CJO=65e-12 BV=33) .MODEL Rdmod RES (TC1=5.5e-3 TC2=1.5E-5) .ENDS ZXMP3A17E6 * *$ * ZXMP4A16G*ZETEX ZXMP4A16G Spice Model v1.0 Last Revised 22/6/06 * .SUBCKT ZXMP4A16G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 2 RIN 2 5 1E9 RD 3 6 Rdmod 0.018 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=4E16 +VTO=-1.8 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.018 IKF=0.1 TRS1=1.5e-3 +CJO=450e-12 TT=2.2e-8 BV=44) .MODEL Rdmod RES (TC1=8e-3 TC2=1.5E-5) .ENDS ZXMP4A16G * *$ * ZXMP4A16K*ZETEX ZXMP4A16K Spice Model v1.0 Last Revised 09/10/06 * .SUBCKT ZXMP4A16K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=1.67 M2 5 2 5 6 Nmod L=1.4E-6 W=0.96 RG 4 2 2 RIN 2 5 1E9 RD 3 6 Rdmod 0.018 RL 3 5 3E9 C1 2 5 40E-12 C2 3 4 25E-12 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=4E16 +VTO=-1.8 KP=1.6E-5 RS=.022 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.018 IKF=0.1 TRS1=1.5e-3 +CJO=450e-12 TT=2.2e-8 BV=44) .MODEL Rdmod RES (TC1=8e-3 TC2=1.5E-5) .ENDS ZXMP4A16K * *$ * ZXMP6A13F*ZETEX ZXMP6A13F Spice Model v2.0 Last Revised 15/02/05 * .SUBCKT zxmp6a13F 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=0.39 M2 5 2 5 6 Nmod L=1.4E-6 W=0.195 RG 4 2 3 RIN 2 5 1E9 RD 3 6 Rdmod 0.25 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16 +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3 +CJO=3.514e-11 BV=66) .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5) .ENDS zxmp6a13F * *$ * ZXMP6A13G*ZETEX ZXMP6A13G Spice Model v2.0 Last Revised 15/02/05 * .SUBCKT zxmp6a13G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=0.39 M2 5 2 5 6 Nmod L=1.4E-6 W=0.195 RG 4 2 3 RIN 2 5 1E9 RD 3 6 Rdmod 0.25 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 1E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16 +VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3 +CJO=3.514e-11 BV=66) .MODEL Rdmod RES (TC1=5e-3 TC2=1e-5) .ENDS zxmp6a13G * *$ * ZXMP6A16DN8*ZETEX ZXMP6A16DN8 Spice Model v1.0 Last Revised 15/3/2007 * .SUBCKT ZXMP6A16DN8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.4E-6 W=2.148 M2 5 2 5 6 Nmod L=1.4E-6 W=1.579 RG 4 2 1.9 RIN 2 5 1E9 RD 3 6 Rdmod 0.04 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.6E15 +VTO=-2.24 KP=1.4E-5 RS=.03 NFS=1E11 KAPPA=.005 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.45E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=110) .MODEL Rdmod RES (TC1=7e-3 TC2=1.0E-5) .ENDS * *$ * ZXMP6A16K*ZETEX ZXMP6A16K Spice Model v1.0 Last Revised 15/3/2007 * .SUBCKT ZXMP6A16K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.4E-6 W=2.148 M2 5 2 5 6 Nmod L=1.4E-6 W=1.579 RG 4 2 1.9 RIN 2 5 1E9 RD 3 6 Rdmod 0.04 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.6E15 +VTO=-2.24 KP=1.4E-5 RS=.03 NFS=1E11 KAPPA=.005 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=10.7E-8 NSUB=6.45E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=110) .MODEL Rdmod RES (TC1=7e-3 TC2=1.0E-5) .ENDS * *$ * ZXMP6A17DN8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=04/02/2009 *VERSION=3 *PIN_ORDER Sp1, Gp1, Sp2, Gp2, Dp2, Dp2, Dp1, Dp1 * .SUBCKT ZXMP6A17DN8 1 2 3 4 5 6 7 8 *Dev1 P-channel M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 27 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 24 25 1.5E-9 RP11 7 25 1E-6 RP12 8 25 1E-6 LG1 2 27 1.2E-9 LS1 1 23 1.2E-9 *Dev2 P-channel M21 60 61 62 62 Ppmod1 L=1.4E-6 W=1.25 M22 62 61 62 60 Npmod1 L=1.4E-6 W=0.95 RG2 61 67 2.8 RIN2 61 62 1E9 RD2 60 64 Rpmod1 0.028 RS2 62 63 Rpmod1 0.068 RL2 63 64 7E9 C2 61 62 160E-12 D2 64 63 Dpmod1 LD2 64 65 1.5E-9 RP21 5 65 1E-6 RP22 6 65 1E-6 LG2 4 67 1.2E-9 LS2 3 63 1.2E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS * *$ ZXMP6A17E6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP6A17E6 1 2 3 M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 27 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 1 24 0.3E-9 LG1 2 27 1.2E-9 LS1 3 23 1.2E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS * *$ ZXMP6A17G* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP6A17G 1 2 3 M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 27 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 1 24 1.0E-9 LG1 2 27 2.3E-9 LS1 3 23 2.3E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS * *$ ZXMP6A17K* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP6A17K 1 2 3 M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 27 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 1 24 1.3E-9 LG1 2 27 2.4E-9 LS1 3 23 2.4E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS ZXMP6A17K * *$ ZXMP6A17N8* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER D G S * .SUBCKT ZXMP6A17N8 1 2 3 M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25 M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95 RG1 21 2 2.8 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.028 RS1 22 23 Rpmod1 0.068 RL1 23 24 7E9 C1 21 22 160E-12 D1 24 23 Dpmod1 LD1 1 24 1.3E-9 LS1 3 23 2.4E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15 +VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12 +M=0.43 VJ=0.41 TT=3.2e-8 BV=66) .MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6) .ENDS * *$ ZXMP6A18DN8*ZETEX ZXMP6A18DN8 Spice Model v2.0 Last Revised 21/2/05 * .SUBCKT ZXMP6A18DN8 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.2E-6 W=2.64 M2 5 2 5 6 Nmod L=1.4E-6 W=1.5 RG 4 2 5 RIN 2 5 1E9 RD 3 6 Rdmod 0.03 RL 3 5 3E9 C1 2 5 25E-12 C2 3 4 15E-12 D1 3 5 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=.5E17 +VTO=-1.83 KP=1.9E-5 RS=.035 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=1.6E-12 RS=.022 IKF=1 TRS1=1.5e-3 +CJO=65e-12 BV=66) .MODEL Rdmod RES (TC1=9e-3 TC2=3.9E-5) .ENDS ZXMP6A18DN8 * *$ * ZXMP6A18K* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=25/02/2009 *VERSION=3 *PIN_ORDER D G S * .SUBCKT ZXMP6A18K 1 2 3 M11 20 21 22 22 Ppmod1 L=1.2E-6 W=2.64 M12 22 21 22 20 Npmod1 L=1.4E-6 W=1.5 RG1 27 21 1.3 RIN1 21 22 1E9 RD1 20 24 Rpmod1 0.03 RS1 22 23 1E-6 RL1 23 24 3E9 C11 21 22 500E-12 C12 20 21 15E-12 D1 24 23 Dpmod1 LD1 1 24 1.3E-9 LG1 2 27 2.4E-9 LS1 3 23 2.4E-9 .MODEL Ppmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=.5E17 VTO=-1.83 +KP=1.9E-5 RS=0.035 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Npmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dpmod1 D (IS=1.6E-12 RS=.022 IKF=1 TRS1=1.5E-3 +CJO=65E-12 BV=66) .MODEL Rpmod1 RES (TC1=10e-3 TC2=8E-6) .ENDS * *$ ZXMP7A17G*ZETEX ZXMP7A17G Spice Model v1.0 Last Revised 14/3/2007 * .SUBCKT ZXMP7A17G 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 1.9 RIN 2 5 1E9 RD 3 6 Rdmod 0.07 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 1.0E-9 LG 4 40 2.3E-9 LS 5 50 2.3E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=50E15 +VTO=-1.77 KP=2.5E-5 RS=.05 NFS=2E11 KAPPA=.002 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5.2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 +M=0.43 VJ=0.41 TT=2.2e-8 BV=77) .MODEL Rdmod RES (TC1=9e-3 TC2=1.5E-5) .ENDS * *$ * ZXMP7A17K*ZETEX ZXMP7A17K Spice Model v1.0 Last Revised 14/3/2007 * .SUBCKT ZXMP7A17K 30 40 50 * D G S M1 6 2 5 5 Pmod L=1.35E-6 W=1.082 M2 5 2 5 6 Nmod L=1.8E-6 W=0.6 RG 4 2 1.9 RIN 2 5 1E9 RD 3 6 Rdmod 0.07 RL 3 5 7E9 D1 3 5 Dbodymod LD 3 30 1.3E-9 LG 4 40 2.4E-9 LS 5 50 2.4E-9 .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=50E15 +VTO=-1.77 KP=2.5E-5 RS=.05 NFS=2E11 KAPPA=.002 UO=650 IS=1E-15 N=10) .MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5.2E15 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.02 IKF=0.02 TRS1=1.5e-3 CJO=380e-12 +M=0.43 VJ=0.41 TT=2.2e-8 BV=77) .MODEL Rdmod RES (TC1=9e-3 TC2=1.5E-5) .ENDS * *$ * ZXMS6001N3* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=27/11/09 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMS6001N3 1 2 3 M1 31 4 33 33 Mmod1 M2 4 4 43 3 Mmod2 M=25 M3 41 37 38 38 Mmod3 M4 16 45 17 3 Mmod2 M=200 M5 15 16 17 3 Mmod2 M=200 M6 14 15 3 3 Mmod2 M=400 R1 2 4 20E3 R2 41 31 0.01 R3 3 33 0.25 R4 1 3 10E6 R5 37 3 20E3 R6 2 13 15E3 R7 2 3 26E3 R8 12 10 30E3 R9 12 11 28E3 R10 11 3 2.3E3 R11 13 16 35E3 R12 13 15 35E3 R13 17 3 2.5E3 R14 4 14 300 R15 18 45 50E3 R16 44 12 1.2E3 C1 4 33 400E-12 C2 4 1 75E-12 C3 35 36 400E-12 C4 16 3 200E-12 S1 43 3 41 42 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 42 3 2 3 0.22 E2 34 33 4 33 1 E3 18 19 11 10 100 E4 44 3 2 3 1 E6 36 3 31 4 1 D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 3 13 Dmod5 D6 10 3 Dmod6 D7 37 41 Dmod7 D8 3 1 Dmod8 D9 3 45 Dmod2 V1 1 41 0 * *Distributed Thermal Model for device mounted on minimum copper Rth=208°C/W *To enable thermal feedback for transient analysis only change **G1 to G1 *Transient junction temperature may be observed at node 100 where 1V=1°C * **G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) } R21 20 21 0.07 R22 21 22 0.17 R23 22 23 0.37 R24 23 24 1.34 R25 24 25 2.80 R26 25 26 11.19 R27 26 27 48.10 R28 27 28 78.30 R29 28 29 65.99 C21 20 21 7.45E-5 C22 21 22 2.98E-4 C23 22 23 8.94E-4 C24 23 24 2.23E-3 C25 24 25 1.97E-2 C26 25 26 3.58E-2 C27 26 27 5.61E-2 C28 27 28 4.47E-1 C29 28 29 1.36 V2 29 3 25 E5 19 3 22 29 0.201 *Junction temperature at node 20 is 1V/°C *Ambient temperature set V2 at 1V per 1°C * * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2 ) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=4) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12) .MODEL Smod1 VSWITCH RON=6000 ROFF=1E6 VON=0.5 VOFF=-1.5 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .ENDS * *$ ZXMS6004FF* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=08/12/2009 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMS6004FF 1 2 3 M1 31 40 33 33 Mmod1 M2 4 4 21 3 Mmod2 M=40 M3 41 37 38 38 Mmod3 M6 14 51 3 3 Mmod2 M=400 R1 2 4 60E3 R2 41 31 0.01 R3 3 33 0.35 R4 41 3 10E6 R5 37 3 20E3 R7 2 12 600 R8 12 10 50E3 R10 50 3 1000 R11 12 52 98E3 R12 3 52 2E3 R13 51 52 120E3 R14 4 14 500 R15 110 111 Rmod1 1 C1 4 33 200E-12 C2 4 31 50E-12 C3 35 31 200E-12 C4 52 3 50E-12 S1 21 3 41 22 Smod1 S2 4 35 31 4 Smod2 S3 34 35 31 4 Smod3 E1 22 3 2 3 0.22 E2 34 33 4 33 1 E3 19 3 103 109 4E-3 E4 19 50 value={V(10)-V(52)-0.50} E5 51 3 value={V(12)*((TANH(V(50)*100)+1)/2)} E6 4 40 100 3 4.2e-3 E7 109 3 value={(V(110)*1000)+27} D1 5 2 Dmod1 D2 5 3 Dmod1 D3 38 4 Dmod3 D4 3 12 Dmod4 D5 13 3 Dmod6 D6 10 13 Dmod6 D7 37 41 Dmod7 D8 3 41 Dmod8 V1 1 41 0 V2 3 111 1 I1 3 110 1 * * Distributed Thermal Model 15mm x 15mm x 1.6mm FR4 1oz Cu * To enable thermal feedback for transient analysis only change **G1 to G1 * Transient junction temperature may be observed at node 100 where 1V=1°C * **G1 3 100 value={ABS( I(V1) * V(1,3) ) } R21 100 101 0.23 R22 101 102 0.275 R23 102 103 1.265 R24 103 104 2.875 R25 104 105 10.925 R26 105 106 28.175 R27 106 107 29.67 R28 107 108 11.73 R29 108 109 67.85 C21 100 101 2.17E-5 C22 101 102 1.09E-4 C23 102 103 2.37E-4 C24 103 104 6.61E-4 C25 104 105 2.563E-3 C26 105 106 6.744E-3 C27 106 107 2.7974E-2 C28 107 108 0.8525 C29 108 109 0.8843 * .MODEL Mmod1 NMOS (LEVEL=1 VTO=1.35 IS=1E-15 KP=10) .MODEL Mmod2 NMOS (LEVEL=1 VTO=2.7 ) .MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.001 RS=10) .MODEL Dmod1 D (RS=11 BV=11) .MODEL Dmod2 D (RS=1 BV=5 CJO=10p) .MODEL Dmod3 D (RS=10 BV=12) .MODEL Dmod4 D (RS=10 BV=6) .MODEL Dmod5 D (RS=10 BV=7) .MODEL Dmod6 D (IS=1E-14 RS=10 BV=12) .MODEL Dmod7 D (RS=1 BV=65) .MODEL Dmod8 D (IS=1E-13 RS=0.05 N=1.005 BV=90 CJO=212E-12 M=0.5 VJ=0.75) .MODEL Smod1 VSWITCH RON=100 ROFF=1E6 VON=0.5 VOFF=0 .MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5 .MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5 .MODEL Rmod1 RES (TC1=1e-3) .ENDS * *$ ZXRE060*TITLE=ZXRE060 MACROMODEL *ORIGIN=DZSL_AG_GS *SIMULATOR=DIODES, SIMETRIX and PSPICE *DATE=3rd March 2011 *VERSION=1 *PIN_ORDER 1:PGND, 2:GND, 3:IN, 4:FB, 5:OUT * .subckt ZXRE060 PGND GND IN FB OUT * pins-----------1----2----3----4---5 * *Voltage reference with temperature effect E1 REFG 1 value={(0.6+1.72e-5*(TEMP-25)-1e-7*(TEMP-25)**2)*(0.5+0.5*tanh(4*(V(VCCL)-1.5)))} I1 VCCL 1 0.48m ; Supply current R1 REFG inm 48k R2 FB inp 48k C1 inm inp 0.2p I3 VCCL inp 45n ; input bias current I4 VCCL inm 45n * *First amplifier, limited to internal 2V supply E2 E2out 1 value={tanh(11.52*(V(inp)-V(inm)))} R7 E2out C3p 1 C3 C3p 1 250n ; 600kHz first breakpoint R3 C3p int 10k I2 VCCL int 2.5u C2 int 1 6p ; 2MHz second breakpoint *Second amplifier: transconductance *with sink current output voltage limit of 0 *source current output voltage limit of 2V G1 G1out 1 value={11e-6*(1-tanh(19.3*(v(int)-v(Q2e))))*tanh(10*max((V(G1out)-V(1)),0))} G2 VCCL G1out value={11e-6*(1+tanh(19.3*(V(int)-V(Q2e))))*tanh(10*max(2-(V(G1out)-V(1)),0))} * *Output Stage Q1 Q1c G1out Q2b 1 NPNCT R4 VCCL Q1c 250 R5 Q2b PGNDL 50k Q2 OUTL Q2b Q2e 1 NPNCT 5 R6 Q2e PGNDL 2.56 * L1 IN VCCL 2n L2 GND 1 2n L3 OUT OUTL 2n L4 PGND PGNDL 2n *Output transistor model from CT .model NPNCT NPN + is = 2.265f + nf = 1.000 + ise = 6.055f + ne = 1.562 + bf = 190.0 + ikf = 28.71m + vaf = 22.83 + nr = 1.008 + isc = 1.00000e-24 + nc = 1.543 + br = 34.83 + ikr = 1.250m + var = 19.13 + rb = 267.9 + irb = 1.250m + rbm = 100.0m + re = 802.9m + rc = 164.1m + cje = 163.1f + vje = 1.200 + mje = 151.0m + tf = 70.00p + xtf = 10.00 + vtf = 30.00 + itf = 200.0m + ptf = 34.00 + cjc = 380.6f + vjc = 410.0m + mjc = 360.0m + xcjc = 50.00m + tr = 6.00n + cjs = 525.2f + vjs = 401.0m + mjs = 179.2m + xtb = 200.0m + xti = 5.100 + eg = 1.110 + fc = 950.0m .ends ZXRE060 * * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXT1053AK*ZETEX ZXT1053AK Spice Model v1.0 Last Revised 08/03/06 * .MODEL ZXT1053AK NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * *$ * ZXT10N15DE6*ZETEX ZXT10N15DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10N15DE6 NPN IS =5.92E-13 BF =500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE =1.425 NR =1 BR =280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC =1.46 RB =0.1 RE =0.025 RC =0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF =1.12E-9 TR =2.15E-9 * *$ * ZXT10N20DE6*ZETEX ZXT10N20DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10N20DE6 NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * *$ * ZXT10N50DE6*ZETEX ZXT10N50DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10N50DE6 NPN IS =5.8032E-13 NF =1.0027 BF =485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE =1.4148 NR =1.0006 BR =110 IKR=1.4 + VAR=51 ISC=5E-12 NC =1.45 RB =0.042 RE =0.033 + RC =0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF =0.78E-9 TR =9E-9 * *$ * ZXT10P12DE6*ZETEX ZXT10P12DE6 Spice Model v1.0 Last Revised 25/11/02 * .MODEL ZXT10P12DE6 PNP IS =5.5E-13 BF =500 IKF =3 VAF =14.93 + ISE=1.75E-13 NE =1.5 NR =1.00 BR =280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC =1.34 RB =0.3 RE =0.03 + RC =0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF =1.2E-9 + TR =2E-9 * *$ * ZXT10P20DE6*ZETEX ZXT10P20DE6 Spice Model v1.0 Last Revised 11/03/02 * .MODEL ZXT10P20DE6 PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 + TR =23.7E-9 * *$ * ZXT10P40DE6*ZETEX ZXT10P40DE6 Spice Model v2.0 Last Revised 1/5/03 * .MODEL ZXT10P40DE6 PNP IS =6.261E-13 BF =500 IKF =1.4 VAF =28.4 +ISE=1.057E-13 NE =1.4923 NR =1.00 BR =42 IKR=0.65 VAR=10.21 +ISC=6E-14 NC =1.124 RB =0.078 RE =0.077 RC =0.04 CJC=59.54E-12 +MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 +TF =0.68E-9 TR =23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 +TRC1=.0025 * *$ * ZXT12P40DX*ZETEX ZXT12P40DX Spice Model v1.2 Last revision 7/12/06 * .MODEL ZXT12P40DX PNP IS =8E-13 NF =1 BF =700 IKF=1.2 VAF=22 ISE=6E-14 NE =1.4 +NR =1 BR =35 IKR=1.2 VAR=10 ISC=1.3e-13 NC =1.45 RB =0.025 RE =0.025 RC =0.025 +CJC=123E-12 MJC=0.45 VJC=0.7 CJE=412E-12 MJE=0.45 VJE=0.74 TF =5E-10 TR =30e-9 +XTB=1.6 RCO=0.45 GAMMA=0.8E-9 QUASIMOD=1 * *$ * ZXT13N20DE6*ZETEX ZXT13N20DE6 Spice Model v2.0 Last revision 3/10/05 * .MODEL ZXT13N20DE6 NPN IS=1.71E-12 NF=1 BF=600 IKF=15 VAF=51 RC=0.03 +ISE=1.5E-13 NE=1.3 NR=1 BR=125 VAR=12 ISC=3.5E-13 NC=1.3 RB =1.6 +RE =0.006 CJC=162E-12 MJC=0.278 VJC=0.391 CJE=614E-12 MJE=0.308 +VJE=0.46 TF=1.1E-9 TR=6.3E-9 XTB=1.4 QUASIMOD=1 RCO=0.5 GAMMA=1E-8 * *$ * ZXT13P12DE6*ZETEX ZXT13P12DE6 Spice Model v1.0 Last Revised 1/3/02 *This single transistor Model is one half of a pair in package. * .MODEL ZXT13P12DE6 PNP IS=1.7E-12 NF=1 BF=530 IKF=1 NK=0.43 +VAF=15 ISE=1E-13 NE=1.5 NR=1 BR=200 VAR=5 ISC=1e-13 +NC=1.5 IKR=0.13 RB=1.1 RE=.013 RC=.013 CJC=257E-12 +MJC=0.34 VJC=0.54 CJE=645E-12 MJE=0.62 VJE=1.3 +TF=2E-9 TR=5e-9 XTB=1.5 * *$ * ZXT13P20DE6*ZETEX ZXT13P20DE6 Spice Model v1.0 Last Revised 17/1/05 * .MODEL ZXT13P20DE6 PNP IS=1.3E-12 NF=1 BF=450 IKF=6 VAF=15 +ISE=0.8E-13 NE=1.4 NR=1 BR=210 VAR=5 ISC=4e-14 NC=1.18 RB=1 +RE=.0075 RC=.07 CJC=235E-12 MJC=0.38 VJC=0.51 CJE=674E-12 +MJE=0.52 VJE=0.95 TF=1.1E-9 TR=3.6e-9 XTB=1.5 * *$ * ZXT13P40DE6*ZETEX ZXT13P40DE6 Spice Model v1.0 Last Revised 24/10/07 * .MODEL ZXT13P40DE6 PNP IS=1.6E-12 NF=1 BF=600 VAF=29.9 ISE=1.2E-13 + IKF=4 NE=1.45 BR=48 VAR=6.8 ISC=1.2E-13 NC=1.1 IKR=0.4 RC=0.028 + RB=0.10 RE=0.022 QUASIMOD=1 RCO=0.5 GAMMA=2.5E-9 CJC=155E-12 MJC=0.43 + VJC=0.6 CJE=570E-12 MJE=0.59 VJE=1.1 TF=0.8E-9 TR=18E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * *$ * ZXT690BK*ZETEX ZXT690BK Spice Model v1.0 Last revision 13/07/07 * .MODEL ZXT690BK NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9 +TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002 +TRC1=0.002 * *$ * ZXT790AK* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=10/11/2009 *VERSION=1 * .MODEL ZXT790AK PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75 +VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ ZXT849K* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23FEB2011 *VERSION=1 * .MODEL ZXT849K NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90 + ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8 + VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223 + RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532 + CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9 * *$ ZXT951K* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23FEB2011 *VERSION=1 * .MODEL ZXT951K PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3 + ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12 + NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522 + VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9 * *$ ZXT953K*ZETEX ZXT953K Spice Model v1.0 Last Revised 16/01/07 * .MODEL ZXT953K PNP IS=1.6649E-12 NF=1.0139 BF=220 IKF=4 VAF=55 +ISE=6.2E-13 NE=1.62 NR=1.0107 BR=40 IKR=0.95 VAR=43 ISC=3E-12 +NC=1.4 RB=0.032 RE=0.0295 RC=0.034 CJC=265E-12 MJC=0.5286 +VJC=0.76 CJE=1.1E-9 TF=0.8E-9 TR=29E-9 XTB=1.4 NK=0.7 +TRE1=.0025 TRB1=.0025 TRC1=.0025 * *$ * ZXTC2045E6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2045E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13 + NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5 + RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9 + TR =30e-9 .MODEL Pmod PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25 + ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18 + RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12 + VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9 .ENDS * *$ ZXTC2061E6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2061E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 + BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 + CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 + XTB=1.4 .MODEL Pmod PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13 + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010 + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35 + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 .ENDS * *$ ZXTC2062E6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2062E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4 + BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085 + CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 + RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4 .MODEL Pmod PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49 + NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9 + GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10 + TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 .ENDS * *$ ZXTC2063E6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=C1 6=E1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTC2063E6 1 2 3 4 5 6 Q1 1 2 6 Nmod Q2 3 5 4 Pmod * .MODEL Nmod NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 .MODEL Pmod PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 .ENDS * *$ ZXTC4591AMC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=2 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC4591AMC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 + ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF =0.71E-9 TR =2.5E-9 .MODEL Pmod PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 + VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 + ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 + CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 + TF =0.51E-9 TR =3.6E-9 .ENDS * *$ ZXTC6717MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=2 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6717MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 .MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 .ENDS * *$ ZXTC6718MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6718MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .ENDS * *$ ZXTC6719MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6719MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 + VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 + RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF=0.78E-9 TR=9E-9 .MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 .ENDS * *$ ZXTC6720MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTC6720MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5 +ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12 +NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48 +MJC=0.41 TF =9E-10 TR=3.5E-8 .MODEL Pmod PNP IS =6.348E-13 BF =450 IKF =1.25 VAF =30.24 + ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 + VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09 + RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 + CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 + TR =57E-9 .ENDS * *$ ZXTD09N50DE6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08FEB2011 *VERSION=2 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTD09N50DE6 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 .ENDS * *$ ZXTD2090E6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=10FEB2011 *VERSION=1 *PIN_ORDER * 1=E1 6=C1 * 2=B1 5=B2 * 3=C2 4=E2 * .SUBCKT ZXTD2090E6 1 2 3 4 5 6 Q1 6 2 1 Mod1 Q2 3 5 4 Mod1 * .MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84 + ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12 + NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371 + VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9 .ENDS * *$ ZXTD4591E6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=23JUL2010 *VERSION=1 *PIN_ORDER P1=C1, P2=B1, P3=C2, P4=E2, P5=B2, P6=E1 * .SUBCKT ZXTD4591E6 P1 P2 P3 P4 P5 P6 Q1 P1 P2 P6 Nmod Q2 P3 P5 P4 Pmod * .MODEL Nmod NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 + ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075 + CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 + TF=0.71E-9 TR=2.5E-9 .ENDS ZXTD4591E6 .MODEL Pmod PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 + NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 + RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 + MJC=0.415 * *$ ZXTD617MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD617MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Nmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 .ENDS * *$ ZXTD618MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD618MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Nmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .ENDS * *$ ZXTD619MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD619MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Nmod Q2 20 3 4 Nmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 + VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 + RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF=0.78E-9 TR=9E-9 .ENDS * *$ ZXTD6717E6* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27/04/2010 *VERSION=1 *PIN_ORDER C1, B1, C2, E2, B2, E1. * .SUBCKT ZXTD6717E6 1 2 3 4 5 6 * Q1 1 2 6 Nmod1 Q2 3 5 4 Pmod1 * .MODEL Nmod1 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * .MODEL Pmod1 PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 * .ENDS * *$ ZXTD717MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD717MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Pmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 .ENDS * *$ ZXTD718MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD718MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Pmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .ENDS * *$ ZXTD720MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=B2 *4=E2 *5=C2 *6=C2 *7=C1 *8=C1 * .SUBCKT ZXTD720MC 1 2 3 4 5 6 7 8 Q1 10 1 2 Pmod Q2 20 3 4 Pmod RP1 10 7 0.001 RP2 10 8 0.001 RP3 20 5 0.001 RP4 20 6 0.001 * .MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 .ENDS * *$ ZXTN04120HFF*ZETEX ZXTN04120HFF Spice Model v1.0 Last Revised 09/02/07 * .SUBCKT ZXTN04120HFF 1 2 3 * C B E Q1 1 2 4 SUB605 Q2 1 4 3 SUB605 3.46 * .MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS ZXTN04120HFF * *$ * ZXTN04120HK* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=17Dec2013 *VERSION=1 * .SUBCKT ZXTN04120HK 1 2 3 * C B E Q1 1 2 4 SUB04120 Q2 1 4 3 SUB04120 3.46 .MODEL SUB04120 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14 +NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3 +RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9 .ENDS ZXTN04120HK * * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXTN07012EFF*ZETEX ZXTN07012EFF Spice Model v1.0 Last Revised 12/10/07 * .MODEL ZXTN07012EFF NPN IS=1.7E-12 NF=1 BF=1100 IKF=5 VAF=25 ISE=3E-13 + NE=1.43 NR=1 BR=470 IKR=1 VAR=6.5 ISC=1.2e-12 NC=1.5 RB=0.1 RE=0.03 + RC=0.0097 RCO=0.2 GAMMA=10E-10 CJC=106E-12 MJC=0.33 VJC=0.55 CJE=285E-12 + MJE=0.41 VJE=0.80 TF=0.4E-9 TR=1.3e-9 XTB=1.4 TRC1=0.003 TRB1=0.003 + TRE1=0.003 QUASIMOD=1 * *$ * ZXTN07045EFF*ZETEX ZXTN07045EFF Spice Model v1.0 Last revision 13/07/07 * .MODEL ZXTN07045EFF NPN IS=1.5E-12 NF=1 BF=1160 IKF=4 VAF=60 ISE=4E-13 NE=1.37 +NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.022 RC=0.015 +CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.6E-9 +TR=9E-9 RCO=0.75 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.004 TRB1=0.004 +TRC1=0.004 * *$ * ZXTN08400BFF*ZETEX ZXTN08400BFF Spice Model v1.0 Last Revised 12/10/07 * .MODEL ZXTN08400BFF NPN IS=3.3E-13 NF=1 BF=215 IKF=2 VAF=1500 ISE=1.3E-13 + NE=1.43 NR=1 BR=11.3 IKR=0.2 VAR=70 ISC=1E-12 NC=1.15 RB=0.2 RE=0.075 + RC=0.036 CJC=31E-12 MJC=0.33 VJC=0.38 CJE=360E-12 MJE=0.34 VJE=0.7 + TF=19E-10 TR=170E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=36 GAMMA=15E-7 *$ * ZXTN10150DZ* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=CADENCE PSPICE 15.7 *DATE=01DEC2010 *VERSION=1 * .MODEL ZXTN10150D NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3 + VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5 + VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046 + CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73 + TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1 + TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4 * *$ ZXTN19020CFF*ZETEX ZXTN19020CFF Spice Model v1.0 Last Revised 29/08/07 * .MODEL ZXTN19020CFF NPN IS=5.9E-13 NF=1 BF=400 IKF=9 VAF=117 ISE=9E-14 +NE=1.42 NR=1 BR=163 IKR=1 VAR=15.2 ISC=4E-13 NC=1.38 RB=.17 RE=.005 +RC=.0025 CJC=98E-12 MJC=0.29 VJC=0.46 CJE=379E-12 MJE=0.38 VJE=0.8 +TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 +RCO=0.15 GAMMA=1E-9 * *$ * ZXTN19020DFF*ZETEX ZXTN19020DFF Spice Model v1.0 Last Revised 29/08/07 * .MODEL ZXTN19020DFF NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14 +NE=1.4 NR=1 BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055 +RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8 +TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 +RCO=0.15 GAMMA=0.3E-9 * *$ * ZXTN19020DG*DIODES_INC_SPICE_MODEL ZXTN19020DG *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=4/01/2013 *VERSION=1 .MODEL ZXTN19020DG NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14 + NE=1.4 NR=1 BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055 + RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8 + TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.15 GAMMA=0.3E-9 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ZXTN19020DZ*DIODES_INC_SPICE_MODEL ZXTN19020DZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=4/01/2013 *VERSION=1 .MODEL ZXTN19020DZ NPN IS=9E-13 NF=1 BF=530 IKF=6 VAF=105 ISE=8E-14 + NE=1.4 NR=1 BR=174 IKR=1 VAR=12.8 ISC=4E-13 NC=1.37 RB=0.17 RE=0.0055 + RC=0.0035 CJC=89E-12 MJC=0.34 VJC=0.51 CJE=365E-12 MJE=0.39 VJE=0.8 + TF=9E-10 TR=0.55E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.15 GAMMA=0.3E-9 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ZXTN19055DZ*ZETEX ZXTN19055DZ Spice Model v1.0 Last Revised 10/10/07 * .MODEL ZXTN19055DZ NPN IS=8E-13 NF=1 BF=520 IKF=9 VAF=150 ISE=9E-14 + NE=1.42 NR=1 BR=80 IKR=2.2 VAR=22 ISC=6E-13 NC=1.23 RB=0.14 RE=0.011 + RC=0.011 CJC=67E-12 MJC=0.35 VJC=0.47 CJE=360E-12 MJE=0.38 VJE=0.75 + TF=7E-10 TR=1.7E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.8 GAMMA=3.8E-9 * *$ * ZXTN19060CFF*ZETEX ZXTN19060CFF Spice Model v1.0 Last Revised 28/08/07 * .MODEL ZXTN19060CFF NPN IS=6E-13 NF=1 BF=375 IKF=9 VAF=176 ISE=7E-14 NE=1.42 +NR=1 BR=65 IKR=.12 VAR=23.3 ISC=3E-13 NC=1.27 RB=0.17 RE=0.007 RC=0.005 +CJC=62E-12 MJC=0.38 VJC=0.51 CJE=379E-12 MJE=0.38 VJE=0.8 TF=10E-10 +TR=2.5E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 RCO=1.1 +GAMMA=1.6E-8 * *$ * ZXTN19060CG* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=09FEB2011 *VERSION=2 * .MODEL ZXTN19060CG NPN IS=6E-13 NF=1 BF=375 IKF=9 VAF=176 ISE=7E-14 NE=1.42 +NR=1 BR=65 IKR=.12 VAR=23.3 ISC=3E-13 NC=1.27 RB=0.17 RE=0.007 RC=0.005 +CJC=62E-12 MJC=0.38 VJC=0.51 CJE=379E-12 MJE=0.38 VJE=0.8 TF=10E-10 +TR=2.5E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 RCO=1.1 +GAMMA=1.6E-8 * *$ ZXTN19100CFF*ZETEX ZXTN19100CFF Spice Model v1.0 Last Revised 27/08/07 * .MODEL ZXTN19100CFF NPN IS=5.7E-13 NF=1 BF=390 IKF=6 VAF=183 ISE=1E-13 +NE=1.42 NR=1 BR=43 IKR=.1 VAR=32 ISC=5.5E-13 NC=1.25 RB=.15 RE=.01 RC=.01 +CJC=52E-12 MJC=0.378 VJC=0.45 CJE=373E-12 MJE=0.38 VJE=0.77 TF=8.5E-10 +TR=5.1E-8 XTB=1.4 TRC1=.004 TRB1=.004 TRE1=.004 QUASIMOD=1 RCO=2.1 +GAMMA=1.9E-8 * *$ * ZXTN19100CZ.MODEL ZXTN19100CZ NPN IS=5.7E-13 NF=1 BF=390 IKF=6 VAF=183 ISE=1E-13 + NE=1.42 NR=1 BR=43 IKR=.1 VAR=32 ISC=5.5E-13 NC=1.25 RB=.15 RE=.01 RC=.01 + CJC=52E-12 MJC=0.378 VJC=0.45 CJE=373E-12 MJE=0.38 VJE=0.77 TF=8.5E-10 + TR=5.1E-8 XTB=1.4 TRC1=.004 TRB1=.004 TRE1=.004 QUASIMOD=1 RCO=2.1 + GAMMA=1.9E-8 * *$ ZXTN2005G*ZETEX ZXTN2005G Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2005G NPN IS =1.9E-12 BF =730 XTB=1.4 IKF=5.5 VAF=30 +ISE=8E-13 NE =1.4 NR =1 BR =280 IKR=2.5 VAR=15 ISC=1.2E-12 +NC =1.4 RB =1 RBM =0.012 IRB =1 RE = 0.022 RC =0.004 CJC=125E-12 +MJC=0.3917 VJC=0.5871 CJE=528E-12 MJE=0.3826 VJE=0.7686 +TF =0.8E-9 TR =3.2E-9 * *$ * ZXTN2005Z*ZETEX ZXTN2005Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2005Z NPN IS =1.9E-12 BF =730 XTB=1.4 IKF=5.5 VAF=30 +ISE=8E-13 NE =1.4 NR =1 BR =280 IKR=2.5 VAR=15 ISC=1.2E-12 +NC =1.4 RB =1 RBM =0.012 IRB =1 RE = 0.022 RC =0.004 CJC=125E-12 +MJC=0.3917 VJC=0.5871 CJE=528E-12 MJE=0.3826 VJE=0.7686 +TF =0.8E-9 TR =3.2E-9 * *$ * ZXTN2007G*ZETEX ZXTN2007G Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2007G NPN IS=1.5E-12 NF=1 BF=210 IKF=8 VAF=100 ISE=7.5E-13 +NE=1.39 NR=1 BR=120 IKR=5 VAR=25 ISC=9E-13 NC=1.37 RC=0.005 TRC1=3e-3 +RB=0.3 TRB1=6e-3 RE=0.024 TRE1=3e-3 CJC=110E-12 MJC=0.44 VJC=0.65 CJE=650E-12 +TF=0.8E-9 TR=9E-9 XTB=1.4 * *$ * ZXTN2007Z*ZETEX ZXTN2007Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTN2007Z NPN IS=1.5E-12 NF=1 BF=210 IKF=8 VAF=100 ISE=7.5E-13 +NE=1.39 NR=1 BR=120 IKR=5 VAR=25 ISC=9E-13 NC=1.37 RC=0.005 TRC1=3e-3 +RB=0.3 TRB1=6e-3 RE=0.024 TRE1=3e-3 CJC=110E-12 MJC=0.44 VJC=0.65 CJE=650E-12 +TF=0.8E-9 TR=9E-9 XTB=1.4 * *$ * ZXTN2010A*ZETEX ZXTN2010A Spice Model v1.0 Last revision 24/03/2006 * .MODEL ZXTN2010A NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * ZXTN2010G*ZETEX ZXTN2010G Spice Model v1.0 Last revision 24/03/2006 * .MODEL ZXTN2010G NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * ZXTN2010Z*ZETEX ZXTN2010Z Spice Model v1.0 Last revision 24/10/2006 * .MODEL ZXTN2010Z NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158 +ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13 +NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348 +VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5 * *$ * ZXTN2011G.MODEL ZXTN2011G NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ ZXTN2011Z.MODEL ZXTN2011Z NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13 + NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15 + RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78 + QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4 + TRC1=0.003 TRB1=0.003 TRE1=0.003 * *$ ZXTN2018F* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=09/04/2009 *VERSION=2 * .MODEL ZXTN2018F NPN IS=3E-13 NF=1 BF=245 IKF=8.5 VAF=87 ISE=1.3E-13 + NE=1.42 NR=1 BR=50 IKR=1 VAR=33 ISC=7e-13 NC=1.4 RE=0.0077 RB=0.15 + RC=0.0049 QUASIMOD=1 RCO=0.75 GAMMA=3E-9 VO=11.5 CJE=610E-12 VJE=0.7 + MJE=0.36 CJC=90E-12 VJC=0.6 MJC=0.36 TF=8.8E-10 TR=2.5e-8 XTB=1.4 + TRE1=0.004 TRB1=0.004 TRC1=0.004 * *$ ZXTN2020F*ZETEX ZXTN2020F Spice Model v1.0 Last Revised 15/03/06 * .MODEL ZXTN2020F NPN IS=500E-15 NF=.998 BF=270 IKF=15 VAF=390 ISE=300E-15 +NE =1.46 NR=1 BR=40 IKR=1 VAR=23 ISC=500E-15 NC=1.37 RC=0.006 RB =0.15 +RE =0.010 CJC=72E-12 MJC=0.42 VJC=0.68 CJE=580E-12 MJE=0.35 VJE=0.68 +TF=0.8E-9 TR=40E-9 XTB=1.4 QUASIMOD=1 RCO=1.2 GAMMA=5E-9 * *$ * ZXTN2031F*ZETEX ZXTN2031F Spice Model v1.0 Last Revised 01/11/05 * .MODEL ZXTN2031F NPN IS =3E-13 BF =380 VAF=100 IKF=2.5 ISE=1.1E-13 NE =1.37 +BR =100 VAR=28 NR =.972 IKR=0.8 ISC=6.5E-13 NC =1.372 RB =0.2 RE =.015 +RC =.015 CJE=250E-12 TF =1E-9 CJC=50E-12 TR =10E-9 * *$ * ZXTN2038F* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=26JUL2010 *VERSION=1 * .MODEL ZXTN2038F NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165 + ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 ISC=1.6E-12 + NC=1.38 RB=0.065 RE=0.109 RC=0.075 CJC=17.2E-12 MJC=0.3429 + VJC=0.4298 CJE=96E-12 TF=0.71E-9 TR=2.5E-9 * *$ ZXTN2040F*ZETEX ZXTN2040F Spice Model v1.0 Last Revised 10/03/06 * .MODEL ZXTN2040F NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165 +ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69 +ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075 +CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12 +TF =0.71E-9 TR =2.5E-9 * *$ * ZXTN23015CFH*ZETEX ZXTN23015CFH Spice Model v1.0 Last Revised 05/10/07 * .MODEL ZXTN23015CFH NPN IS=8E-13 NF=1 BF=410 IKF=9 VAF=90 ISE=3.3E-13 + NE=1.42 NR=1 BR=180 IKR=1 VAR=12.5 ISC=1.2E-12 NC=1.52 RB=0.2 RE=0.0012 + RC=0.005 CJC=153E-12 MJC=0.35 VJC=0.55 CJE=550E-12 MJE=0.37 VJE=0.75 + TF=6E-10 TR=0.35E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=0.12 GAMMA=5E-10 * *$ * ZXTN25012EFH*ZETEX ZXTN25012EFH Spice Model v1.0 Last revision 01/03/07 * .MODEL ZXTN25012EFH NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 +BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 +CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 +XTB=1.4 * *$ * ZXTN25012EFL*ZETEX ZXTN25012EFL Spice Model v1.0 Last revision 01/03/07 * .MODEL ZXTN25012EFL NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 +BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 +CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 +XTB=1.4 * *$ * ZXTN25012EZ* *ZETEX ZXTN25012EZ Spice model v1.0 Last revision 14/01/08 * .MODEL ZXTN25012EZ NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35 + BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081 + CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9 + XTB=1.4 * *$ * * (c) 2008 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ZXTN25015DFH*ZETEX ZXTN25015DFH Spice Model v1.0 Last Revised 11/10/07 * .MODEL ZXTN25015DFH NPN IS=5E-13 NF=1 BF=500 IKF=5.5 VAF=57 ISE=2.3E-13 + NE=1.55 NR=1 BR=160 IKR=1 VAR=12.3 ISC=6e-13 NC=1.47 RB=0.15 RE=.009 + RC=.006 RCO=0.2 GAMMA=1.8E-10 CJC=60E-12 MJC=0.33 VJC=0.55 CJE=200E-12 + MJE=0.38 VJE=0.75 TF=0.6E-9 TR=2.6e-9 XTB=1.4 TRC1=.005 TRB1=.005 + TRE1=.005 QUASIMOD=1 * *$ * ZXTN25020BFH*ZETEX ZXTN25020BFH Spice Model v1.0 Last Revised 13/3/2007 * .MODEL ZXTN25020BFH NPN IS=2E-13 BF=280 NF=1 VAF=40 IKF=4.3 ISE=1E-13 NE=1.4 +BR=90 NR=1 VAR=19 IKR=2.0 ISC=5e-13 NC=1.45 RE=0.0131 RB=0.14 RC=0.0086 +CJE=224E-12 VJE=0.67 MJE=0.33 CJC=62.5E-12 VJC=0.55 MJC=0.335 TF=0.65E-9 TR=7.5e-9 +RCO=0.13 GAMMA=1E-10 QUASIMOD=1 XTB=1.4 * *$ * ZXTN25020CFH*ZETEX ZXTN25020CFH Spice Model v1.0 Last revision 04/07/07 * .MODEL ZXTN25020CFH NPN IS =2.8E-13 NF =1 BF =390 IKF=9 NK=0.73 VAF=67 +ISE=7E-14 NE =1.4 NR =1 BR =36 IKR=1.7 VAR=14 ISC=4e-13 NC =1.4 RB =0.15 +RE =.008 RC =.006 RCO=0.29 GAMMA=1.1E-9 CJC=47E-12 MJC=0.33 VJC=0.49 +CJE=196E-12 MJE=0.34 VJE=0.68 TF =0.7E-9 TR =20e-9 XTB=1.4 TRE1=.005 +TRB1=.005 TRC1=.005 QUASIMOD=1 * *$ * ZXTN25020DFH*ZETEX ZXTN25020DFH Spice Model v1.0 Last Revised 02/3/2007 * .MODEL ZXTN25020DFH NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4 +BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085 +CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 +RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4 * *$ * ZXTN25020DFL*ZETEX ZXTN25020DFL Spice Model v1.0 Last Revised 02/3/2007 * .MODEL ZXTN25020DFL NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4 +BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085 +CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9 +RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4 * *$ * ZXTN25040DFH*ZETEX ZXTN25040DFH Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DFH NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * ZXTN25040DFL*ZETEX ZXTN25040DFL Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DFL NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * ZXTN25040DZ*ZETEX ZXTN25040DZ Spice Model v1.0 Last revision 01/06/07 * .MODEL ZXTN25040DZ NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13 +NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012 +CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9 +RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005 * *$ * ZXTN25050DFH*ZETEX ZXTN25050DFH Spice Model v1.0 Last Revised 09/10/07 * .MODEL ZXTN25050DFH NPN IS=5E-13 NF=1 BF=520 IKF=5.6 VAF=115 ISE=1.1E-13 + NE=1.38 NR=1 BR=22 IKR=1 VAR=65 ISC=3E-13 NC=1.25 RB=0.2 RE=0.00125 + RC=0.00128 CJC=35.5E-12 MJC=0.32 VJC=0.45 CJE=183E-12 MJE=0.38 VJE=0.75 + TF=5.7E-10 TR=5.3E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 + RCO=1.7 GAMMA=1.2E-8 * *$ * ZXTN25060BFH*ZETEX ZXTN25060BFH Spice Model v1.0 Last revision 05/06/07 * .MODEL ZXTN25060BFH NPN IS=2E-13 NF=1 BF=315 IKF=4.0 VAF=210 ISE=1.2E-13 +NE=1.3 NR=1 BR=12 IKR=0.5 VAR=27 ISC=4.2e-13 NC=1.33 RE=.005 RB=0.25 +RC=.005 RCO=1.9 GAMMA=16E-9 QUASIMOD=1 CJE=222E-12 VJE=0.73 MJE=0.35 +CJC=34E-12 VJC=0.46 MJC=0.34 TF=7.4E-10 TR=7.6e-8 XTB=1.4 TRE1=.004 +TRB1=.004 TRC1=.004 * *$ * ZXTN25060BZ*ZETEX ZXTN25060BZ Spice Model v1.0 Last revision 05/06/07 * .MODEL ZXTN25060BZ NPN IS=2E-13 NF=1 BF=315 IKF=4.0 VAF=210 ISE=1.2E-13 +NE=1.3 NR=1 BR=12 IKR=0.5 VAR=27 ISC=4.2e-13 NC=1.33 RE=.005 RB=0.25 +RC=.005 RCO=1.9 GAMMA=16E-9 QUASIMOD=1 CJE=222E-12 VJE=0.73 MJE=0.35 +CJC=34E-12 VJC=0.46 MJC=0.34 TF=7.4E-10 TR=7.6e-8 XTB=1.4 TRE1=.004 +TRB1=.004 TRC1=.004 * *$ * ZXTN25100BFH*ZETEX ZXTN25100BFH Spice Model v1.0 Last Revised 11/10/07 * .MODEL ZXTN25100BFH NPN IS=3E-13 NF=1 BF=315 IKF=5 VAF=256 ISE=1.1E-13 + NE=1.43 NR=1 BR=31 IKR=1 VAR=40 ISC=3e-13 NC=1.15 RB=0.15 RE=.014 + RC=.015 RCO=4.5 GAMMA=4.5E-8 CJC=30E-12 MJC=0.3 VJC=0.42 CJE=210E-12 + MJE=0.38 VJE=0.8 TF=0.8E-9 TR=70e-9 XTB=1.4 TRC1=.003 TRB1=.003 + TRE1=.003 QUASIMOD=1 * *$ * ZXTN25100DFH*ZETEX ZXTN25100DFH Spice Model v1.0 Last Revised 09/10/07 * .MODEL ZXTN25100DFH NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13 + NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013 + RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78 + TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=7 GAMMA=8.3E-8 * *$ * ZXTN25100DG.MODEL ZXTN25100DG NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13 + NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013 + RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78 + TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=7 GAMMA=8.3E-8 * *$ ZXTN25100DZ.MODEL ZXTN25100DZ NPN IS=6E-13 NF=1 BF=550 IKF=4 VAF=117 ISE=1.3E-13 + NE=1.42 NR=1 BR=35 IKR=1 VAR=36 ISC=5E-13 NC=1.18 RB=0.2 RE=0.0013 + RC=0.0016 CJC=28E-12 MJC=0.3 VJC=0.4 CJE=182E-12 MJE=0.39 VJE=0.78 + TF=7.5E-10 TR=5.3E-8 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 QUASIMOD=1 + RCO=7 GAMMA=8.3E-8 * *$ ZXTN26020DMF* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=19/01/2011 *VERSION=1 * .MODEL ZXTN26020DMF NPN IS=7.5E-13 BF=700 NF=1.005 VAF=61 IKF=3.3 + ISE=8.5E-14 NE=1.35 BR=130 NR=1 VAR=11.3 IKR=1.4 ISC=6E-13 NC=1.38 + RE=0.061 RB=0.5 RC=0.010 CJE=143E-12 VJE=0.80 MJE=0.39 CJC=39E-12 + VJC=0.40 MJC=0.26 TF=0.48E-9 TR=2.7E-9 RCO=0.42 GAMMA=2E-9 + QUASIMOD=1 XTB=1.35 TRE1=0.004 TRB1=0.004 TRC1=0.004 * *$ ZXTN26070CV*DIODES_INC_SPICE_MODEL ZXTN26070CV *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=10Nov2011 *VERSION=1 .MODEL ZXTN26070 NPN IS=300E-15 NF=1 BF=350 ISE=60E-15 NE=1.35 + BR=16 ISC=400E-15 NC=1.25 NR=1 CJC=30.37E-12 MJC=0.33 VJC=0.5 + CJE=160.7E-12 MJE=0.37 VJE=0.75 RC=93.2m RE=30m RB=2 TF=.8n TR=80n .SIMULATOR DEFAULT ZXTN4004K* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=27-Jan-2014 *VERSION=1 * .MODEL ZXTN4004K NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3 + VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5 + VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046 + CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73 + TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1 + TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXTN4004Z* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_IM *SIMULATOR=PSPICE *DATE=27-Jan-2014 *VERSION=1 * .MODEL ZXTN4004Z NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3 + VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5 + VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046 + CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73 + TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1 + TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4 * * (c) 2014 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXTN5551FL* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTN5551FL NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ ZXTN5551Z (Not Recommended)* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTN5551Z NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14 + NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23 + CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9 + TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7 * *$ ZXTN617MA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTN617MA NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6 + ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25 + ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017 + CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12 + MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9 * *$ ZXTN618MA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTN618MA NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 * *$ ZXTN619MA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTN619MA NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84 + ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4 + VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033 + RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12 + TF=0.78E-9 TR=9E-9 * *$ ZXTN620MA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTN620MA NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5 +ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12 +NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48 +MJC=0.41 TF =9E-10 TR=3.5E-8 * *$ ZXTN649F*DIODES_INC_SPICE_MODEL ZXTN649F *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=22Aug2013 *VERSION=1.0 .MODEL ZXTN649F NPN (IS=1.45E-13 NF=.99 ISE=75E-15 NE=1.38 BF=220 ISC=400E-15 NC=1.4 BR=30 NR=.99 CJE=178p VJE=.7 MJE=.345 CJC=37.45p MJC=.35 VJC=.5 RE=.03 RB=1 RC=.03 VAF=75 IKF=8.5 TF=1n TR=250u Nk=.69 TR =23.7E-9 XTB=1.3 TRE1=.0025 TRB1=.0025 TRC1=.0025) * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXTNS618MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=N/C *4=A *5=K *6=K *7=C1 *8=C1 * .SUBCKT ZXTNS618MC 1 2 3 4 5 6 7 8 Q1 11 1 2 Nmod D1 4 12 S9086 RP1 11 7 0.001 RP2 11 8 0.001 RP3 12 5 0.001 RP4 12 6 0.001 RP5 3 4 1E15 * .MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25 + ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF=0.95E-9 TR=2.25E-9 .MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p + M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25 .ENDS * *$ ZXTP05120HFF*ZETEX ZXTP05120HFF Spice Model v1.0 Last Revised 08/02/07 * .SUBCKT ZXTP05120HFF 1 2 3 * C B E Q1 1 2 4 SUB704 Q2 1 4 3 SUB704 4 * .MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817 +ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 +RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595 .ENDS ZXTP05120HFF * *$ * ZXTP07012EFF*ZETEX ZXTP07012EFF Spice Model v1.0 Last Revised 14/05/07 * .MODEL X07P12E PNP IS=1.3E-12 BF=660 NF=1 VAF=11 IKF=4 ISE=2E-13 NE=1.48 +BR=230 NR=1 VAR=6 IKR=0.65 ISC=1.2e-13 NC=1.33 RE=0.035 RB=0.1 RC=0.018 +CJE=280E-12 VJE=0.8 MJE=0.47 CJC=145E-12 VJC=0.75 MJC=0.46 +TF=3.3E-10 TR=2e-9 RCO=0.26 GAMMA=20E-10 QUASIMOD=1 +TRB1=0.001 TRE1=0.001 TRC1=0.001 XTB=1.5 * *$ * ZXTP07040DFF*ZETEX ZXTP07040DFF Spice Model v1.0 Last Revised 12/10/07 * .MODEL ZXTP07040DFF PNP IS=7.5E-13 NF=1 BF=490 VAF=34 ISE=1.9E-13 + IKF=3 NE=1.49 BR=69 VAR=5.7 ISC=1.3E-13 NC=1.22 RC=0.006 RB=0.1 + RE=0.022 CJC=105E-12 MJC=0.44 VJC=0.65 CJE=299E-12 MJE=0.52 VJE=0.96 + TF=0.47E-9 TR=10E-9 XTB=1.4 TRC1=.005 TRB1=.005 TRE1=.005 RCO=0.58 + GAMMA=6E-10 QUASIMOD=1 * *$ * ZXTP08400BFF*ZETEX ZXTP08400BFF Spice Model v1.1 Last Revised 15/08/07 * .MODEL ZXTP08400BFF PNP IS=3.8E-13 BF=200 NF=1 VAF=250 ISE=2E-13 NE=1.48 +BR=5 NR=1 VAR=65 ISC=3.8E-13 NC=1.05 RC=0.045 RE=0.068 RB=0.1 +CJE=370E-12 VJE=0.8 MJE=0.43 CJC=65E-12 VJC=0.5 MJC=0.43 +TF=1.2E-9 TR=2400E-9 RCO=14 GAMMA=7E-8 QUASIMOD=1 XTB=1.5 * *$ * ZXTP19020CFF* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 * * .MODEL ZXTP19020CFF PNP IS=6.3E-13 NF=1 BF=400 VAF=21.5 ISE=1.2E-13 IKF=4.6 +NE=1.42 BR=140 VAR=4.9 ISC=1.3E-13 NC=1.25 RC=0.0045 RB=0.15 RE=0.009 +CJC=145E-12 MJC=0.33 VJC=0.6 CJE=379E-12 MJE=0.47 VJE=0.85 TF=0.4E-9 +TR=4.5E-9 XTB=1.4 QUASIMOD=1 RCO=0.18 GAMMA=0.3E-9 TRC1=.003 TRB1=.003 +TRE1=.003 * *$ * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT ZXTP19020DFF* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=18/09/2014 *VERSION=1 * .MODEL ZXTP19020DFF PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13 + IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15 + RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6 + CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * *$ * (c) 2014 Diodes Inc * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * .SIMULATOR DEFAULT ZXTP19020DG*DIODES_INC_SPICE_MODEL ZXTP19020DG *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=7/01/2013 *VERSION=1 .MODEL ZXTP19020DG PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13 + IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15 + RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6 + CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ZXTP19020DZ*DIODES_INC_SPICE_MODEL ZXTP19020DZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG *DATE=7/01/2013 *VERSION=1 .MODEL ZXTP19020DZ PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13 + IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15 + RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6 + CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003 + TRE1=.003 XTB=1.4 * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL ZXTP19060CFF*ZETEX ZXTP19060CFF Spice Model v1.0 Last Revised 11/09/07 * .MODEL ZXTP19060CFF PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8 +NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009 +CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9 +TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003 +TRE1=.003 * *$ * ZXTP19060CG.MODEL ZXTP19060CG PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8 +NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009 +CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9 +TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003 +TRE1=.003 * *$ ZXTP19060CZ.MODEL ZXTP19060CZ PNP IS=6E-13 NF=1 BF=385 VAF=55.2 ISE=1.3E-13 IKF=3.8 +NE=1.45 BR=43 VAR=10.4 ISC=1.3E-13 NC=1.18 RC=0.0045 RB=0.15 RE=0.009 +CJC=98E-12 MJC=0.42 VJC=0.66 CJE=360E-12 MJE=0.5 VJE=0.95 TF=0.53E-9 +TR=21E-9 XTB=1.4 QUASIMOD=1 RCO=0.7 GAMMA=7.5E-10 TRC1=.003 TRB1=.003 +TRE1=.003 * *$ ZXTP19100CFF.MODEL ZXTP19100CFF PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5 + NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014 + QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75 + CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003 + TRE1=0.003 XTB=1.4 * *$ ZXTP19100CG.MODEL ZXTP19100CG PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5 + NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014 + QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75 + CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003 + TRE1=0.003 XTB=1.4 * *$ ZXTP19100CZ.MODEL ZXTP19100CZ PNP IS=5E-13 NF=1 BF=370 VAF=70 ISE=1E-13 IKF=3.5 + NE=1.45 BR=16 VAR=6 ISC=1.8E-13 NC=1.09 RC=0.009 RB=0.2 RE=0.014 + QUASIMOD=1 RCO=2.25 GAMMA=1.0E-8 CJC=80E-12 MJC=0.47 VJC=0.75 + CJE=360E-12 MJE=0.51 VJE=1 TF=0.85E-9 TR=1.15E-7 TRC1=0.003 TRB1=0.003 + TRE1=0.003 XTB=1.4 * *$ ZXTP2006E6*ZETEX ZXTP2006E6 Spice Model v1.0 Last revision 07/06/07 * .MODEL ZXTP2006E6 PNP IS=11E-13 BF=610 NF=1 VAF=20.1 IKF=2.5 ISE=1.1E-13 +NE=1.49 BR=75 NR=1 VAR=4.3 IKR=1 ISC=1.1e-13 NC=1.31 RE=0.0072 RB=0.3 +RC=0.012 CJE=460E-12 VJE=1.0 MJE=0.54 CJC=170E-12 VJC=0.62 MJC=0.42 +TF=9E-10 TR=8.5e-9 RCO=0.5 GAMMA=25E-10 QUASIMOD=1 XTB=1.5 TRE1=.003 +TRB1=.003 TRC1=.003 * *$ * ZXTP2008G*ZETEX ZXTP2008G Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTP2008G PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * ZXTP2008Z*ZETEX ZXTP2008Z Spice Model v1.0 Last revision 24/03/06 * .MODEL ZXTP2008Z PNP IS=1.5111E-12 NF=1.0127 BF=208 XTB=1.4 IKF=7.5 +VAF=43.4 ISE=1.335E-13 NE=1.42 NR=1.009 BR=100 IKR=1.3 VAR=9.7 +ISC=1.392E-13 NC=1.22 RB=0.12 RE=0.022 RC=0.004 CJC=246E-12 +MJC=0.338 VJC=0.4294 CJE=796E-12 TF=1.01E-9 TR=5E-9 * *$ * ZXTP2009Z*ZETEX ZXTP2009Z Spice Model v1.0 Last Revised 24/03/2006 * .MODEL ZXTP2009Z PNP IS=2e-12 NF=1 ISE=9e-13 NE=1.55 BF=600 VAF=26 +IKF=2.5 NR=.97 ISC=2e-13 NC=1.4 BR=105 VAR=2.41 IKR=1.5 RE=2e-3 +RB=700e-3 RC=20e-3 CJE=535e-12 CJC=165e-12 TF=0.6e-9 TR=10e-9 +XTB=1.5 * *$ * ZXTP2012A*ZETEX ZXTP2012A Spice Model v2.0 Last revision 09/01/07 * .MODEL ZXTP2012A PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * ZXTP2012G*ZETEX ZXTP2012G Spice Model v2.0 Last revision 09/01/07 * .MODEL ZXTP2012G PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * ZXTP2012Z*ZETEX ZXTP2012Z Spice Model v2.0 Last revision 09/01/07 * .MODEL ZXTP2012Z PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4 +NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022 +CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9 +TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10 * *$ * ZXTP2013G*ZETEX ZXTP2013G Spice Model v1.0 Last revision 22/12/06 * .MODEL ZXTP2013G PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ * ZXTP2013Z*ZETEX ZXTP2013Z Spice Model v1.0 Last revision 22/12/06 * .MODEL ZXTP2013Z PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6 +NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019 +CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9 +TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10 * *$ * ZXTP2014G*DIODES_INC_SPICE_MODEL ZXTP2014G *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZXTP2014G PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXTP2014Z*DIODES_INC_SPICE_MODEL ZXTP2014Z *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=28Dec2012 *VERSION=1 .MODEL ZXTP2014Z PNP IS=370E-14 NF=.99 BF=180 ISE=150E-15 NE=1.35 + BR=6 ISC=260E-15 NC=1.1 NR=.99 CJC=121E-12 MJC=0.4 VJC=0.6 + CJE=687E-12 MJE=0.4 VJE=0.75 RC=40m RE=40m RB=.18 TF=.8n TR=150n XTB=1.65 NK=.78 IKF=5.1 EG=1.4 * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXTP2025F*ZETEX ZXTP2025F Spice Model v1.0 Last revision 31/03/06 * .MODEL ZXTP2025F PNP IS=6E-13 NF=.996 BF=340 VAF=31 ISE=1.3E-13 IKF=4 +NE=1.7 BR=45 VAR=12 ISC=7E-14 NC=1.7 RC=0.009 RB=.19 RE=0.009 +CJC=130E-12 MJC=0.425 VJC=0.68 CJE=510E-12 MJE=0.4 VJE=0.68 TF=0.75E-9 +TR=11E-9 XTB=1.4 QUASIMOD=1 RCO=0.4 GAMMA=0.5E-9 * *$ * ZXTP2027F.MODEL ZXTP2027F PNP IS=6.3E-13 NF=1 BF=270 VAF=22 ISE=1E-13 IKF=7 + NE=1.4 BR=120 VAR=8 ISC=1.3E-13 NC=1.5 RC=0.009 RB=0.15 RE=0.013 + CJC=180E-12 MJC=0.36 VJC=0.55 CJE=520E-12 MJE=0.35 VJE=0.8 QUASIMOD=1 + RCO=0.32 GAMMA=4E-10 TF=0.72E-9 TR=4.1E-9 XTB=1.4 * *$ ZXTP2029F*ZETEX ZXTP2029F Spice Model v1.0 Last Revised 15/03/06 * .MODEL ZXTP2029F PNP IS=470E-15 NF=1 BF=270 VAF=72 ISE=100E-15 +IKF=18 NE=1.46 +NR=1 BR=22 VAR=16 ISC=470E-15 IKR=1 NC=1.37 RC=0.01 +RB=0.15 RE=0.02 CJC=130E-12 MJC=0.43 VJC=0.68 CJE=570E-12 MJE=0.4 +VJE=0.68 TF=0.55E-9 TR=25E-9 XTB=1.4 QUASIMOD=1 RCO=1.5 GAMMA=2E-8 * *$ * ZXTP2039F*ZETEX ZXTP2039F Spice Model v1.0 Last Revised 8/2/06 * .MODEL ZXTP2039F PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15 +NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16 +RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395 +MJC=0.415 * *$ * ZXTP2041F*ZETEX ZXTP2041F Spice Model v1.0 Last Revised 10/03/06 * .MODEL ZXTP2041F PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93 +VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33 +ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156 +CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12 +TF =0.51E-9 TR =3.6E-9 * *$ * ZXTP23015CFH*ZETEX ZXTP23015CFH Spice Model v2.0 Last revision 21/05/07 * .MODEL ZXTP23015CFH PNP IS=6.5E-13 BF=470 NF=1 VAF=16.5 IKF=6 ISE=0.6E-13 NE=1.4 +BR=240 NR=1 VAR=3.1 ISC=1.3E-13 NC=1.45 RE=0.0122 RB=0.1 RC=0.0051 +CJE=540E-12 VJE=0.95 MJE=0.3 CJC=202E-12 VJC=0.45 MJC=0.3 TF=0.55E-9 TR=1.4E-9 +TRB1=0.007 XTB=1.4 * *$ * ZXTP23140BFH*ZETEX ZXTP23140BFH Spice Model v1.0 Last Revised 04/10/07 * .MODEL ZXTP23140BFH PNP IS=4E-13 NF=1 BF=230 VAF=99 ISE=1.2E-13 IKF=6 + NE=1.4 BR=16 VAR=5.15 ISC=2E-13 NC=1.09 RC=0.0045 RB=0.15 RE=0.014 + QUASIMOD=1 RCO=1.4 GAMMA=7E-9 CJC=103E-12 MJC=0.405 VJC=0.55 CJE=630E-12 + MJE=0.47 VJE=0.95 TF=0.9E-9 TR=5E-8 TRC1=.003 TRB1=.003 TRE1=.003 XTB=1.4 * *$ * ZXTP25012EFH*ZETEX ZXTP25012EFH Spice Model v1.0 Last Revised 16/10/07 * .MODEL ZXTP25012EFH PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13 + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010 + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35 + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * *$ * ZXTP25012EZ*DIODES_INC_SPICE_MODEL ZXTP25012EZ *SIMULATOR=SIMETRIX *ORIGIN=DZSL *DATE=9Apr2012 *VERSION=1 .MODEL ZXTP25012EFH PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13 + IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010 + RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35 + VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005 + TRB1=0.005 TRE1=0.005 XTB=1.4 * (c) 2011 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * ZXTP25015DFH*ZETEX ZXTP25015DFH Spice Model v1.0 Last revision 30/05/07 * .MODEL ZXTP25015DFH PNP IS=5E-13 BF=480 NF=1 VAF=18 IKF=2.5 ISE=1.2E-13 +NE=1.48 BR=65 NR=1 VAR=6.9 IKR=1 ISC=8e-14 NC=1.31 RE=0.0125 RB=0.11 +RC=0.0089 CJE=191E-12 VJE=1.05 MJE=0.56 CJC=68E-12 VJC=0.52 MJC=0.31 +TF=3.7E-10 TR=6.5e-9 RCO=0.39 GAMMA=8.5E-10 QUASIMOD=1 XTB=1.5 TRE1=.004 +TRB1=.004 TRC1=.004 * *$ * ZXTP25020BFH*ZETEX ZXTP25020BFH Spice Model v1.0 Last revision 19/07/07 * .MODEL ZXTP25020BFH PNP IS=1.7E-13 NF=1 BF=220 IKF=3.3 VAF=21 ISE=8E-14 +NE=1.45 NR=1 BR=44 IKR=1 VAR=7 ISC=8e-14 NC=1.4 RE=0.0133 RB=0.12 +RC=0.0092 RCO=0.5 GAMMA=2.5E-9 CJC=62E-12 MJC=0.33 VJC=0.55 CJE=226E-12 +MJE=0.34 VJE=0.7 TF=4.1E-10 TR=10e-9 XTB=1.5 TRE1=0.002 TRB1=0.002 +TRC1=0.002 QUASIMOD=1 * *$ * ZXTP25020CFF*ZETEX ZXTP25020CFF Spice Model v1.0 Last revision 19/07/07 * .MODEL ZXTP25020CFF PNP IS=2.5E-13 BF=400 NF=1 VAF=18.7 IKF=3.8 ISE=1.9E-13 NE=1.5 +BR=110 NR=1 VAR=5 IKR=2 ISC=1.3e-13 NC=1.45 RE=0.01 RB=0.2 RC=0.02 +CJE=199E-12 VJE=0.9 MJE=0.48 CJC=80E-12 VJC=0.53 MJC=0.3 TF=3.8E-10 TR=3.8e-9 +TRB1=.02 XTB=1.5 * *$ * ZXTP25020CFH*ZETEX ZXTP25020CFH Spice Model v1.0 Last revision 29/01/07 * .MODEL ZXTP25020CFH PNP IS=2.5E-13 NF=1 BF=400 IKF=3.8 VAF=18.7 ISE=1.9E-13 +NE=1.5 NR=1 BR=110 IKR=2 VAR=5 ISC=1.3e-13 NC=1.45 RB=0.2 RE=0.01 RC=0.02 +CJC=80E-12 MJC=0.3 VJC=0.53 CJE=199E-12 MJE=0.48 VJE=0.9 TF=3.8E-10 +TR=3.8e-9 XTB=1.5 TRB1=.02 * *$ * ZXTP25020DFH*ZETEX ZXTP25020DFH Spice Model v1.0 Last revision 20/07/07 * .MODEL ZXTP25020DFH PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49 +NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9 +GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10 +TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 * *$ * ZXTP25020DFL*ZETEX ZXTP25020DFL Spice Model v1.0 Last revision 20/07/07 * .MODEL ZXTP25020DFL PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49 +NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.9 +GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E-10 +TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1 * *$ * ZXTP25040DFH*ZETEX ZXTP25040DFH Spice Model v1.0 Last revision 25/07/07 * .MODEL ZXTP25040DFH PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 +NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 +RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 +TRC1=0.003 QUASIMOD=1 * *$ * ZXTP25040DFL*ZETEX ZXTP25040DFL Spice Model v1.0 Last revision 25/07/07 * .MODEL ZXTP25040DFL PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 +NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 +RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 +MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 +TRC1=0.003 QUASIMOD=1 * *$ * ZXTP25040DZ.MODEL ZXTP25040DZ PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14 + NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12 + RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12 + MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 + TRC1=0.003 QUASIMOD=1 ZXTP25060BFH*ZETEX ZXTP25060BFH Spice Model v2.0 Last revision 29/05/07 * .MODEL ZXTP25060BFH PNP IS=1.5E-13 BF=230 NF=1 VAF=72 IKF=3.5 ISE=8E-14 +NE=1.55 BR=15 NR=1 VAR=8 IKR=1 ISC=8e-14 NC=1.2 RE=0.014 RB=0.11 RC=0.0103 +CJE=239E-12 VJE=0.98 MJE=0.495 CJC=59E-12 VJC=0.51 MJC=0.33 TF=5E-10 +TR=34e-9 RCO=0.85 GAMMA=8.5E-10 QUASIMOD=1 XTB=1.5 TRE1=.008 TRB1=.008 +TRC1=.008 * *$ * ZXTP25100BFH*ZETEX ZXTP25100BFH Spice Model v1.0 Last Revised 15/10/07 * .MODEL ZXTP25100BFH PNP IS=2E-13 NF=1 BF=200 VAF=121 ISE=1.6E-14 + IKF=6 NE=1.65 BR=17 VAR=16 ISC=1.4E-13 NC=1.1 IKR=1 RC=0.015 RB=0.2 + RE=0.012 QUASIMOD=1 RCO=3.8 GAMMA=2.5E-8 CJC=49E-12 MJC=0.34 VJC=0.5 + CJE=231E-12 MJE=0.46 VJE=0.9 TF=0.6E-9 TR=6.5E-8 TRC1=0.005 TRB1=0.005 + TRE1=0.005 XTB=1.4 * *$ * ZXTP25100CFH.MODEL ZXTP25100CFH PNP IS=2E-13 NF=1 BF=375 VAF=75 ISE=4E-14 IKF=1.4 + NE=1.65 BR=15 VAR=9 ISC=9E-14 NC=1.2 IKR=0.45 RC=0.012 RB=0.3 + RE=0.016 QUASIMOD=1 VO=7 RCO=3.4 GAMMA=0.4E-8 CJC=45E-12 MJC=0.38 + VJC=0.52 CJE=190E-12 MJE=0.46 VJE=0.85 TF=3.9E-10 TR=5.3E-8 TRC1=0.004 + TRB1=0.004 TRE1=0.004 XTB=1.4 * *$ * ZXTP25100CZ.MODEL ZXTP25100CZ PNP IS=2E-13 NF=1 BF=375 VAF=75 ISE=4E-14 IKF=1.4 + NE=1.65 BR=15 VAR=9 ISC=9E-14 NC=1.2 IKR=0.45 RC=0.012 RB=0.3 + RE=0.016 QUASIMOD=1 VO=7 RCO=3.4 GAMMA=0.4E-8 CJC=45E-12 MJC=0.38 + VJC=0.52 CJE=190E-12 MJE=0.46 VJE=0.85 TF=3.9E-10 TR=5.3E-8 TRC1=0.004 + TRB1=0.004 TRE1=0.004 XTB=1.4 * *$ ZXTP25140BFH*ZETEX ZXTP25140BFH Spice Model v1.0 Last Revised 08/10/07 * .MODEL ZXTP25140BFH PNP IS=1.6E-13 NF=1 BF=210 VAF=175 ISE=3E-14 IKF=4.2 + NE=1.4 BR=12 VAR=5.15 ISC=1E-13 NC=1.08 IKR=0.7 RC=0.013 RB=0.2 RE=0.016 + QUASIMOD=1 RCO=4 GAMMA=1.4E-8 CJC=42E-12 MJC=0.32 VJC=0.44 CJE=237E-12 + MJE=0.44 VJE=0.85 TF=0.95E-9 TR=22E-8 TRC1=.005 TRB1=.005 TRE1=.005 XTB=1.4 * *$ * ZXTP26020DMF* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=21/01/2011 *VERSION=1 * .MODEL ZXTP26020DMF PNP IS=5.5e-13 NF=1.005 ISE=1.2e-13 NE=1.55 BF=590 + VAF=21 IKF=2 ISC=1.8e-13 NC=1.39 BR=52 VAR=5.7 IKR=0.6 RE=0.067 + RB=0.33 RC=0.012 CJE=147e-12 VJE=0.88 MJE=0.48 CJC=51e-12 VJC=0.51 + MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9 + XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004 * *$ ZXTP5401FL* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTP5401FL PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ ZXTP5401G* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTP5401G PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ ZXTP5401Z* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JUL2010 *VERSION=2 * .MODEL ZXTP5401Z PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14 + NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25 + CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9 + TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8 * *$ ZXTP558L* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=22FEB2011 *VERSION=1 * .MODEL ZXTP558L PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14 + NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1 + RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44 + CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015 + TRE1=.015 XTB=1.4 * *$ ZXTP717MA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP717MA PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 + VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 + RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576 + CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9 + TR=2E-9 * *$ ZXTP718MA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP718MA PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 * *$ ZXTP720MA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP720MA PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 * *$ ZXTP722MA* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 * .MODEL ZXTP722MA PNP IS =6.348E-13 BF =450 IKF =1.25 VAF =30.24 + ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8 + VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09 + RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653 + CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9 + TR =57E-9 * *$ ZXTPS717MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=N/C *4=A *5=K *6=K *7=C1 *8=C1 * .SUBCKT ZXTPS717MC 1 2 3 4 5 6 7 8 Q1 11 1 2 Pmod D1 4 12 S9086 RP1 11 7 0.001 RP2 11 8 0.001 RP3 12 5 0.001 RP4 12 6 0.001 RP5 3 4 1E15 * .MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93 + ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 VAR=5.64 + ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 RC=0.025 CJC=116.9E-12 + MJC=0.3456 VJC=0.4576 CJE=223.6E-12 MJE=0.4803 VJE=0.9091 + TF=1.2E-9 TR=2E-9 .MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p + M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25 .ENDS * *$ ZXTPS718MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=N/C *4=A *5=K *6=K *7=C1 *8=C1 * .SUBCKT ZXTPS718MC 1 2 3 4 5 6 7 8 Q1 11 1 2 Pmod D1 4 12 S9086 RP1 11 7 0.001 RP2 11 8 0.001 RP3 12 5 0.001 RP4 12 6 0.001 RP5 3 4 1E15 * .MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23 + ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04 + RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9 + TR=23.7E-9 .MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p + M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25 .ENDS * *$ ZXTPS720MC* *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=27JAN2011 *VERSION=1 *PIN_ORDER *1=B1 *2=E1 *3=N/C *4=A *5=K *6=K *7=C1 *8=C1 * .SUBCKT ZXTPS720MC 1 2 3 4 5 6 7 8 Q1 11 1 2 Pmod D1 4 12 S9086 RP1 11 7 0.001 RP2 11 8 0.001 RP3 12 5 0.001 RP4 12 6 0.001 RP5 3 4 1E15 * .MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4 + ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21 + ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12 + MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021 + TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025 + TRC1=.0025 .MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p + M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25 .ENDS * *$