EE5514ICYield,Reliability&FailureAnalysisElectronBeamTechniquesW.K.CHIMAssociateProfessorDepartmentofElectricalandComputerEngineeringNationalUniversityofSingaporeE-mail:elecwk@nus.edu.sgTel:(65)6516-6287OfficeLocation:E2-03-31ElectronBeamTechniquesReferences•R.E.Lee,“ScanningElectronMicroscopyandX-RayMicroanalysis”,PrenticeHall,1983.•D.B.HoltandD.C.Joy(Eds.),“SEMMicrocharacterizationofSemiconductors”,AcademicPress,1989.•D.E.Newburyetal.,“AdvancedScanningElectronMicroscopyandX-RayMicroanalysis”,PlenumPress,1986.•D.ChescoeandP.J.Goodhew,“TheOperationofTransmissionandScanningElectronMicroscopes”,OxfordUniversityPress,1990.ElectronBeamTechniques•ScanningElectronMicroscopy(SEM)-Introduction-SEMSignals-InstrumentationandResolution-SamplingVolumeLimitation&SampleCharging•SEMBasedTechniques-X-RayMicroanalysis-SEMVoltageContrast-ElectronBeamInducedCurrent-Cathodoluminescence•TransmissionElectronMicroscopy(TEM)ElectronBeam-Introduction0.11101970197519801985199019952000YearChannellength(m)sizeofhumanbloodcellsizeofavirus2-ordersofmagnitudereductionintransistorsizeover30years!PhotofromIBMtransistoractsasaswitch0.18µmRabiesvirusTransistorchannelTransistorSizeScalingElectronBeam-IntroductionSpatialresolutionissue-Sizeofadisturbingorkillerdefectdecreasing(Singlemissingatom,equivalenttoSi-OBondlength~0.2nm,ina1to2nmthickgatedielectriccouldresultinadisturbingdefect!)-Needforhigherresolutionmicroscopytechniques(e.g.,SEM,TEM,STM/AFM)(TEMmicrographofahigh-Kgatedielectricstack,takenfromChenetal.,J.Electrochem.Soc.,vol.149,no.6,pp.F49-F55,2002.)SEM-Introduction•TheSEMisahighlyversatileinstrumentthatiswidelyusedforimaging,materialcharacterizationandfailureanalysis.•SEMofferstheadvantagesofhighermagnification,greaterdepthoffocusandvariousmodesofimaging,suchas:-Secondaryelectron(SE)imaging-Backscatteredelectron(BSE)imaging-Energy/WavelengthdispersiveX-ray(EDX/WDX)analysis-Voltagecontrast(VC)-Electronbeaminducedcurrent(EBIC)-Cathodoluminescence(CL)-Magneticcontrast(MC)SE...
