2023年河北大学学报(自然科学版)2023第43卷第4期JournalofHebeiUniversity(NaturalScienceEdition)Vol.43No.4DOI:10.3969/j.issn.10001565.2023.04.004新型铁电薄膜在MFIS器件中的应用王树雨,芦春光,袁秋婷,仇加俊,付跃举,蔡淑珍,傅广生(河北大学物理科学与技术学院,河北保定071002)摘要:利用新型铁电材料Na0.5Y0.5TiO3(NYTO)薄膜高介电的特点,将其作为MFIS(metal-ferroelectric-insulator-semiconductor,MFIS)电容器的绝缘层,制备出Pt/Pb(Zr0.2Ti0.8)O3/NYTO/Si结构电容器,并对其进行XRD、SEM、C-V特性测试及I-V特性测试分析.分别对C-V存储窗口(记忆窗口,memorywindow)与应用电压以及绝缘层膜厚的关系进行了研究,结果表明记忆窗口数值比较理想.绝缘层厚度为40nm、电容器的应用电压为32V时,记忆窗口可达13V.对制备的MFIS电容器I-V特性进行了研究,结果表明器件具备较低的漏电流密度,为1.08×10-6A/cm2,且其电流传导机制符合空间电荷限制电流导电机制.关键词:新型铁电薄膜;MFIS电容器;记忆窗口;C-V特性中图分类号:O469文献标志码:A文章编号:10001565(2023)04036405ApplicationofnovelferroelectricthinfilmsinMFISdevicesWANGShuyu,LUChunguang,YUANQiuting,QIUJiajun,FUYueju,CAIShuzhen,FUGuangsheng(CollegeofPhysicsScienceandTechnology,HebeiUniversity,Baoding071002,China)Abstract:FerroelectricNa0.5Y0.5TiO3(NYTO)filmisusedastheinsulatinglayerofMFIS(Metal-Ferroelectric-Insulate-Semiconductor)capacitorsbyitshighdielectricproperties.ThePt/Pb(Zr0.2Ti0.8)O3/NYTO/Sistructurecapacitorswereprepared,andtheirXRD,SEM,C-V,andI-Vcharacterristicsweretestedandanalyzed.ThedependenceofC-Vstoragewindowonapplicationvoltageandinsulationlayerthicknesswerestudiedseparately.Theresultsshowthatthedevicehasalargememorywindowwhenthethicknessoftheinsulationlayeris40nm.Thememorywindowcanreach13Vwith32Vappliedvoltage.TheMFIScapacitorhaslowleakagecurrentdensityof1.08×10-6A/cm2.Theconductionmechanismofleakagecurrentconformstospacechargelimitedcurrentconductionmechanism.Keywords:novelferroelectricfilm;MFIScapacitors;memorywindow;C-Vcharacteristics非挥发性铁电存储器具有高存储密度、较低功耗、随机读写和优良的工艺兼容性等诸多优点,特别是在断电后还能保留之前的数据,使其在存储系统中扮演着越来越...
