2023年第2期仪表技术与传感器InstrumentTechniqueandSensor2023No.2基金项目:山西省重点研发计划项目(202102030201001,202102030201009)收稿日期:2022-08-25压敏电阻的热应力分析及结构优化王婧1,雷程1,梁庭1,王丙寅2,陈国锋2(1.中北大学,动态测试技术国家重点实验室,山西太原030051;2.内蒙古动力机械研究所,内蒙古呼和浩特010000)摘要:为解决SOI压阻式压力传感器敏感芯片上电阻条因热应力堆积导致的断裂问题,通过在电阻条上容易堆积应力的弯折处建立平滑倒角的方式来降低热应力堆积,提高电阻条的热稳定性。利用多物理场耦合分析软件对有无倒角的2种结构进行仿真分析,仿真结果表明:在常压450℃条件下,倒角的存在使得电阻条弯折处的应力比无倒角的结构降低了50%。在300℃测试环境下无倒角电阻发生断裂,而有倒角电阻在300℃测试以及之后的温度测试中结构完好,电压输出正常,表明倒角的设计有助于提高敏感芯片的耐温性,从而提高传感器的热稳定性。关键词:压阻式压力传感器;热应力;敏感芯片;电阻条;耦合仿真;优化设计中图分类号:TP212文献标识码:A文章编号:1002-1841(2023)02-0044-06ThermalStressAnalysisandStructureOptimizationofPiezoresistorWANGJing1,LEICheng1,LIANGTing1,WANGBing-yin2,CHENGuo-feng2(1.NorthUniversityofChina,StateKeyLaboratoryofDynamicTestingTechnology,Taiyuan030051,China;2.InnerMongoliaPowerMachineryInstitute,Hohhot010000,China)Abstract:InordertosolvethefractureproblemoftheresistancestriponthesensitivechipofSOIpiezoresistivepressuresensorduetothermalstressaccumulation,asmoothchamferwasestablishedatthebendoftheresistancestripthatiseasytoac-cumulatestresstoreducethethermalstressaccumulationandimprovethethermalstabilityoftheresistancestrip.Themultiphysi-calfieldcouplinganalysissoftwarewasusedtosimulatethetwostructureswithandwithoutchamfering.Thesimulationresultsshowthatthestressatthebendingpointoftheresistancebarisreducedby50%comparedwiththestructurewithoutchamferingundernormalpressureand450℃.Underthetestenvironmentof300℃,thenonchamferedresistancebreaks,whilethecham-feredresistancehasintactstructureandnormalvoltageoutputinthetestat300℃andthesubsequenttemperaturetest,whichin-dicatesthatthecham...