GaN晶片电化学腐蚀表面摩擦磨损特性_严杰文.pdf

表面技术 第 52 卷 第 6 期 208 SURFACE TECHNOLOGY 2023 年 6 月 收稿日期：20220509；修订日期：20221026 Received：2022-05-09；Revised：2022-10-26 基金项目：国家自然科学基金（52075102，52175385）；NSFC广东省联合基金（U1801259）；佛山市科技创新团队专项（2018IT100242）Fund：National Natural Science Foundation of China(52075102,52175385);NSFC-Guangdong Province Union Fund(U1801259);Foshan Science and Technology Innovation Project of China(2018IT100242)作者简介：严杰文（1980），男，博士，高级工程师，主要研究方向为超精密加工及检测技术。Biography：YAN Jie-wen(1980-),Male,Doctor,Senior engineer,Research focus:ultra precision machining and testing technology.通讯作者：阎秋生（1962），男，博士，教授，主要研究方向为超精密加工技术及装备。Corresponding author：YAN Qiu-sheng(1962-),Male,Doctor,Professor,Research focus:ultra precision machining technology and equipment.引文格式：严杰文,阎秋生,潘继生.GaN 晶片电化学腐蚀表面摩擦磨损特性J.表面技术,2023,52(6):208-222.YAN Jie-wen,YAN Qiu-sheng,PAN Ji-sheng.Friction and Wear Characteristics of Electrochemically Corroded Surfaces of GaN WafersJ.Surface Technology,2023,52(6):208-222.GaN 晶片电化学腐蚀表面摩擦磨损特性 严杰文1,2，阎秋生1，潘继生1（1.广东工业大学 机电工程学院，广州 510006；2.广州计量检测技术研究院，广州 510663）摘要：目的目的 研究 GaN 晶片腐蚀表面的摩擦磨损行为，分析电化学腐蚀条件及介质环境对摩擦磨损行为的影响。方法方法 对不同条件电化学腐蚀后的 GaN 晶片表面进行摩擦磨损实验，通过腐蚀表面的摩擦磨损行为分析电解质溶液（NaOHNa2S2O8H3PO4）和腐蚀电位对 GaN 晶片腐蚀效果的影响，以及腐蚀表面材料的磨损去除特性。结果结果 水介质的润滑作用能有效保持摩擦因数曲线的平稳；不同电解质溶液电化学腐蚀的GaN 晶片表面摩擦磨损存在明显差异，摩擦磨损区域沟槽尺寸和磨损率的顺序为 NaOHNa2S2O8H3PO4；腐蚀电位磨损实验结果表明，腐蚀电位越高，摩擦因数越大，磨损率越大，磨损沟槽表面缺陷越多；通过电化学工作站，测试分析了极化曲线，得到电化学腐蚀速率顺序为 NaOHNa2S2O8H3PO4，与材料去除磨损率规律一致。结论结论 摩擦表面的磨损特性表明，腐蚀表面摩擦磨损率越大，磨损区域的缺陷越多，对应的电化学腐蚀速率越快，表面腐蚀作用越强，在磨损过程中材料越容易被去除。在电化学腐蚀表面摩擦磨损过程中，磨料的引入可明显改变腐蚀表面的摩擦磨损特性，硬质金刚石磨料能显著增大表面磨损率，摩擦因数增大，且曲线波动大，磨损区域的缺陷增多，材料去除呈现明显的脆性断裂痕迹；软质硅溶胶磨料相较于金刚石磨料，其磨损率变小，但摩擦因数曲线更平稳，磨损区域的磨损缺陷减少，表面材料呈现明显的塑性域去除。关键词：GaN 晶片；电化学；腐蚀；摩擦磨损；摩擦因数；微观形貌 中图分类号：TG662；TG115.5+8 文献标识码：A 文章编号：1001-3660(2023)06-0208-15 DOI：10.16490/ki.issn.1001-3660.2023.06.018 Friction and Wear Characteristics of Electrochemically Corroded Surfaces of GaN Wafers YAN Jie-wen1,2,YAN Qiu-sheng1,PAN Ji-sheng1(1.School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China;2.Guangzhou Institute of Measurement and Testing Technology,Guangzhou 510663,China)ABSTRACT:GaN wafer is a chemically stable semiconductor material.Electrochemical action can effectively corrode the surface of GaN wafer.By choosing different electrochemical corrosion electrolyte solutions and different corrosion 第 52 卷 第 6 期 严杰文，等：GaN 晶片电化学腐蚀表面摩擦磨损特性 209 potentials,the electrochemical corrosion effect on the wafer surface can be regulated.In this paper,the friction and wear characteristics of electrochemically corroded GaN wafer surfaces were studied in order to better understand the material removal mechanism of electrochemical mechanical polishing on the surface of GaN wafers.The 4-inch GaN wafer was laser cut into a square size of 10 mm 10 mm.The Ga wafer surface was uniformly ground to the same surface roughness by a plane grinder,and then the ground GaN wafer was subject to electrochemical corrosion under different electrochemical corrosion conditions.In the corrosion experiment,the electrolyte solution(NaOHNa2S2O8H3PO4)was selected,and the corrosion potential(10 V20 V30 V)was selected for electrochemical corrosion of the GaN surface.The surface of the electrochemically corroded GaN wafer was repeatedly cleaned with anhydrous ethanol and deionized water,and then the surface friction and wear experiment was carried out on a friction and wear instrument(WTM-2E).In the friction and wear experiment,Si3N4 friction balls were used to eccentrically scratch the surface of the GaN wafer under constant weight pressure.By comparing dry friction and wear with deionized water and the introduction of abrasives and other environmental media,the friction and wear characteristics was studied with the electrochemical corrosion of different corrosion conditions of GaN wafer surfaces.The surface friction coeffi-cient recorded by the tribometer and the EDS energy spectrometer were used to analyze the change of element com-position in the friction and wear area,and the electrochemical corrosion polarization curve was tested with the elec-trochemical workstation(1470E),then the corrosion rate of the electrochemical corrosion process was calculated by the Tafel extrapolation corrosion rate formula.A scanning electron microscope(JSM-7600F)was used to observe the surface microstructure of the worn area on the corroded surface,and a white light interferometer(CCI HD)was used to detect the groove width,depth and groove cross-sectional area of the worn area.By studying the friction and wear characteristics of the electrochemically corroded surface of GaN wafers,the material removal mechanism of electrochemically corroded GaN wafers was revealed.The results of friction and wear experiments showed that the lubrication effect of water medium could effectively keep the friction coefficient curve stable;There were obvious differences in friction and wear on the surface of GaN wafers electrochemically corroded by different electrolyte solutions.The order of groove size and