第46卷第1期2023年2月电子器件ChineseJournalofElectronDevicesVol.46No.1Feb．2023项目来源:河南省科技攻关项目(212102310086)收稿日期:2021－09－14修改日期:2022－01－21ThresholdVoltageMeasurementMethodofSiCMOSFETConsideringtheHysteresisEffect*WANGZhenzhuo1*，ＲENTingting2(1．TeachingAffairsOffice，HenanPolytechnicInstitute，NanyangHe’nan473000，China;2．SchoolofElectricPowerandArchitecture，ShanxiUniversity，TaiyuanShanxi030000，China)Abstract:Thetrapsinthegateoxidelayerofsiliconcarbide(SiC)MOSFETcreatethecorrespondinguniquethresholdvoltagehysteresiseffect，makingthedefinitionandmeasurementofthethresholdvoltageofSiCMOSFETadifficulttask．Basedonthesaturationphenom-enonofthehysteresiseffect，a“pre-bias+measurement”combinedmeasurementmethodisproposed．Itisnecessarytomeasurethethresholdvoltagetwicetodeterminetheupperandlowerlimitsofthethresholdvoltagedrift，andtheaveragevalueisdefinedasthethresholdvoltage．AnexperimentalmeasurementcircuitisdesignedtoperformtheexperimentalmeasurementsonacertaintypeofSiCMOSFETdeviceunderdifferentpre-biasconditionstoanalyzetheinfluenceofpre-biasvoltageandpulsedurationonthemeasurementresults．Theexperimentalresultsshowthatareasonablechoiceofthepre-biasconditionscanensurethatthehysteresiseffectissaturat-ed，andreproduciblethresholdvoltagemeasurementresultscanbeobtained．Keywords:SiCMOSFET;thresholdvoltagemeasurement;hysteresiseffect;pre-biasconditionsEEACC:2570;7310Bdoi:10．3969/j．issn．1005－9490．2023．01．013考虑弛豫效应的SiCMOSFET阈值电压测量方法研究*王臻卓1*，任婷婷2(1．河南工业职业技术学院教务处，河南南阳473000;2．山西大学电力与建筑学院，山西太原030000)摘要:碳化硅(SiC)MOSFET栅极氧化层中的陷阱造就了其独特的阈值电压弛豫效应的特性，使得SiCMOSFET的阈值电压定义和测量成为一个棘手的问题。首先基于弛豫效应的饱和现象，提出了“预偏置+测量”组合的测量方法，一共需要测量两次阈值电压，以确定阈值电压漂移的上下限，并以其平均值定义为阈值电压。然后设计实验测量电路，对某型号SiCMOSFET器件在不同预偏置条件下进行实验测量，分析预偏置电压和脉冲持续时间对测量结...
