收稿日期:2022-10-02.基金项目:北京微电子技术研究所高校专项计划项目(TX-Z22-01).*通信作者:范柚攸E-mail:15209228315@163.com光电器件DOI:10.16818/j.issn1001-5868.2022100201基于标准CMOS工艺的片上太阳敏感器研究范柚攸1,2*,王红义3,权海洋2(1.北京大学集成电路学院,北京100871;2.北京微电子技术研究所,北京100076;3.西安交通大学微电子学院,西安710049)摘要:微纳卫星对于载荷的苛刻要求使得太阳敏感器的微型化研究具有重要意义。为了解决光学器件和处理电路的集成兼容问题,文章基于标准CMOS工艺提出一种新型片上太阳敏感器,以金属走线层构建微型墙结构,两侧均匀分布pn结构成光电传感器,通过检测两侧光电流比例解算出入射光角度。文章从工艺实现、模型建立、数值仿真和实验测试等方面验证了器件的合理性和可行性。最终,片上太阳敏感器阵列芯片质量为1.5g,尺寸为304.2mm3,检测精度为±1.6°,视场范围为80°,可满足微型化需求。关键词:标准CMOS工艺;太阳敏感器;阵列结构中图分类号:TN15文章编号:1001-5868(2023)01-0018-07ResearchonOn-chipSunSensorBasedonStandardCMOSProcessFANYouyou1,2,WANGHongyi3,QUANHaiyang2(1.SchoolofIntegratedCircuits,PekingUniversity,Beijing100871,CHN;2.BeijingMicroelectronicsTechnologyInstitute,Beijing100076,CHN;3.SchoolofMicroelectronics,Xi’anJiaotongUniversity,Xi’an710049,CHN)Abstract:Itisimportanttostudytheminiaturizationofsunsensorsusedinthemicro-nanosatelliteswhoseloadrequirementisrigorous.Inordertosolvetheintegrationcompatibilityproblemofopticaldevicesandprocessingcircuits,anovelon-chipsunsensorbasedonstandardCMOSprocessisproposedinthispaper.Themicro-wallstructurewasconstructedbymetallayers,andthepnjunctionswereuniformlydistributedonbothsidesasphotoelectricsensors.Theangleofincidentlightwascalculatedbydetectingtheratioofphotocurrentsonbothsides.Therationalityandfeasibilityofthedevicewereverifiedbytheprocessrealization,modelestablishment,numericalsimulationandexperimentaltestinginthispaper.Finally,theon-chipsunsensorarraychipisdesignedandfabricatedwhosemassis1.5g,sizeis304.2mm3,thedetectionaccuracyis±1.6°andthefieldofviewrangeis80°,whichcanmeettherequirementsofminiaturization.Keywords:standardCMOSprocess;...
