2023年第2期仪表技术与传感器InstrumentTechniqueandSensor2023No．2收稿日期:2022－07－28低热零点漂移的高温绝压压力传感器王天靖1，梁庭1，雷程1，王丙寅2，陈国锋2(1．中北大学，仪器科学与动态测试教育部重点实验室，山西太原030051;2．内蒙古动力机械研究所，内蒙古呼和浩特010000)摘要:传统的高温绝压压力传感器一般采用硅和玻璃进行阳极键合来制备绝压腔。由于高温环境下硅片和硼硅玻璃的热膨胀系数不匹配，从而产生较高的热零点漂移。文中提出了一种低热零点漂移的压力传感器设计方案，由硅－玻璃－硅的三层结构代替普通的双层阳极键合结构，并给出了热力学仿真模型。分析表明:改变传感器硅与玻璃的结构比例，实现应力匹配可以有效减小热应力。对芯片进行了高温实验测试，发现传感器的热零点漂移变化率减小了50%。关键词:绝压传感器;热应力;热膨胀系数;仿真;三层键合;热零点漂移中图分类号:TP212文献标识码:A文章编号:1002－1841(2023)02－0008－04HighTemperatureAbsolutePressureSensorwithLowThermalZeroDriftWANGTian-jing1，LIANGTing1，LEICheng1，WANGBing-yin2，CHENGuo-feng2(1．NorthUniversityofChina，KeyLaboratoryofInstrumentScienceandDynamicTesting，MinistryofEducation，Taiyuan030051，China;2．InnerMongoliaPowerMachineryInstitute，Hohhot010000，China)Abstract:Thetraditionalhightemperatureabsolutepressuresensorusuallyusessiliconandglassanodebondingtopreparetheabsolutepressurechamber．Duetothemismatchofthermalexpansioncoefficientofsiliconwaferandborosilicateglassinhightemperatureenvironment，highthermalzerodriftoccurs．Inthispaper，adesignschemeofpressuresensorwithlowthermalzerodriftwasproposed．Thethree-layerstructureofsilicon-glass-siliconwasusedtoreplacethecommondouble-layeranodebondingstructure，andthethermodynamicsimulationmodelwasgiven．Theanalysisshowsthatchangingthestructuralratioofthesensorsiliconandglasstoachievestressmatchingcaneffectivelyreducethermalstress．Thechipistestedathightemperature，anditisfoundthatthethermalzerodriftrateofthesensorwasreducedby50%．Keywords:absolutepressuresensors;thermalstress;coefficientofthermalexpansion;simulation;triplebonding;thermalzerodrift0引言近年来，随着航空航天、石油石化、船舶...
