=================================DOI:10．13290/j．cnki．bdtjs．2023．03．004204半导体技术第48卷第3期2023年3月基于SnSe2.37薄膜材料的高性能近红外光电探测器祝新发，孟宪成，刘哲，贺彪，段伟帅，孙春，王蒙军，范超*(河北工业大学电子信息工程学院，天津300401)摘要:二维材料二硒化锡(SnSe2)具有高迁移率、高光吸收率和窄带隙的特点，被视为近红外(NIR)光电探测器的候选材料。然而SnSe2在制备和生长的过程中会产生一定数量的硒空位，对SnSe2近红外光电探测器的性能造成不利的影响。首先采用化学气相输运(CVT)法制备硒过量的二硒化锡(SnSe2.37)单晶，X射线光电子能谱(XPS)结果表明，Sn和Se的原子数比约为1∶2.37。然后通过机械剥离法从高品质的单晶上分离出横向尺寸为14μm×37μm且厚度为2nm的SnSe2.37薄膜材料。最后使用光刻图形转移法制备高性能的NIR光电探测器。经过测试，该NIR光电探测器对850nm的近红外光表现出优异的光电探测性能，其中响应度可达2820A·W－1，归一化探测率为1.02×1013Jones，外量子效率为4.12×105%，响应时间为15ms。关键词:二硒化锡(SnSe2);化学气相输运(CVT)法;光刻图形转移法;二维材料;近红外光电探测中图分类号:TN386;TN36文献标识码:A文章编号:1003－353X(2023)03－0204－09High-PerformanceNear-InfraredPhotodetectorBasedonSnSe2.37ThinFilmsZhuXinfa，MengXiancheng，LiuZhe，HeBiao，DuanWeishuai，SunChun，WangMengjun，FanChao*(SchoolofElectronicandInformationEngineering，HebeiUniversityofTechnology，Tianjin300401，China)Abstract:Asoneoftwo-dimensional(2D)materials，tindiselenide(SnSe2)hasbeenconsideredasacandidatematerialfornear-infrared(NIR)photodetectorsduetoitsfeaturesofhighmobility，highlightabsorptionandnarrowbandgap．However，amountofseleniumvacancieswouldbegeneratedduringthefabricationandgrowthprocessofSnSe2，causingnegativeeffectsontheperformanceoftheNIRphotodetectorsbasedonSnSe2．Firstly，Se-excessedtindiselenide(SnSe2.37)singlecrystalswerepreparedviachemicalvaportransportation(CVT)method．TheX-rayphotoelectronspectroscopy(XPS)resultsshowthattheatomicratioofSntoSeisabout1∶2.37．Then，SnSe2.37thinfilmswithalateralsizeof14μm×37μmandathicknessof2nmwereobtainedfromthehigh-qualitysinglecrystalbymechanicalexfoliat...
