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IEC_61435-2013.pdf
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IEC_61435 2013
IEC 61435 Edition 2.0 2013-08 INTERNATIONAL STANDARD Nuclear instrumentation High-purity germanium crystals for radiation detectors Measurement methods of basic characteristics IEC 61435:2013(E)Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific),Inc.,,downloaded on Nov-27-2014 by James Madison.No further reproduction or distribution is permitted.Uncontrolled when printed.THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2013 IEC,Geneva,Switzerland All rights reserved.Unless otherwise specified,no part of this publication may be reproduced or utilized in any form or by any means,electronic or mechanical,including photocopying and microfilm,without permission in writing from either IEC or IECs member National Committee in the country of the requester.If you have any questions about IEC copyright or have an enquiry about obtaining additional rights to this publication,please contact the address below or your local IEC member National Committee for further information.IEC Central Office Tel.:+41 22 919 02 11 3,rue de Varemb Fax:+41 22 919 03 00 CH-1211 Geneva 20 infoiec.ch Switzerland www.iec.ch About the IEC The International Electrotechnical Commission(IEC)is the leading global organization that prepares and publishes International Standards for all electrical,electronic and related technologies.About IEC publications The technical content of IEC publications is kept under constant review by the IEC.Please make sure that you have the latest edition,a corrigenda or an amendment might have been published.Useful links:IEC publications search-www.iec.ch/searchpub The advanced search enables you to find IEC publications by a variety of criteria(reference number,text,technical committee,).It also gives information on projects,replaced and withdrawn publications.IEC Just Published-webstore.iec.ch/justpublished Stay up to date on all new IEC publications.Just Published details all new publications released.Available on-line and also once a month by email.Electropedia-www.electropedia.org The worlds leading online dictionary of electronic and electrical terms containing more than 30 000 terms and definitions in English and French,with equivalent terms in additional languages.Also known as the International Electrotechnical Vocabulary(IEV)on-line.Customer Service Centre-webstore.iec.ch/csc If you wish to give us your feedback on this publication or need further assistance,please contact the Customer Service Centre:csciec.ch.Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific),Inc.,,downloaded on Nov-27-2014 by James Madison.No further reproduction or distribution is permitted.Uncontrolled when printed.IEC 61435 Edition 2.0 2013-08 INTERNATIONAL STANDARD Nuclear instrumentation High-purity germanium crystals for radiation detectors Measurement methods of basic characteristics INTERNATIONAL ELECTROTECHNICAL COMMISSION V ICS 27.120 PRICE CODE ISBN 978-2-8322-1033-8 Registered trademark of the International Electrotechnical Commission Warning!Make sure that you obtained this publication from an authorized distributor.Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific),Inc.,,downloaded on Nov-27-2014 by James Madison.No further reproduction or distribution is permitted.Uncontrolled when printed.2 61435 IEC:2013(E)CONTENTS FOREWORD.4 INTRODUCTION.6 1 Scope and object.7 2 Normative references.7 3 Terms,definitions,symbols and abbreviations.7 3.1 Terms and definitions.7 3.2 Symbols and abbreviations.9 Symbols.9 3.2.1 Abbreviations.10 3.2.23.3 Quantities and units.10 4 Measurement of net electrically-active impurity concentrations.10 4.1 Sample preparation for Van der Pauw measurements.10 General.10 4.1.1 Equipment.11 4.1.2 Dimensions and provisions for contacts.11 4.1.3 Etching.12 4.1.44.2 Measurements of(NA ND).13 General.13 4.2.1 Equipment.13 4.2.2 Measurements of resistivity.14 4.2.3 Measurements of Hall coefficient.14 4.2.4 Calculation of(NA ND)from resistivity.15 4.2.5 Calculation of drift mobility from a Van der Pauw measurement.15 4.2.6 Computation of(NA ND)from RH.16 4.2.7 Spatial dependence of(NA ND).17 4.2.8 Axial variations in(NA ND).18 4.2.95 Deep level transient spectroscopy for the determination of impurity-centre concentration.18 5.1 General.18 5.2 Equipment for DLTS method.18 5.3 Sample selection and preparation for DLTS.19 5.4 Measurements for the determination of impurity-centre concentration.19 General.19 5.4.1 DLTS signal as a function of temperature.21 5.4.2 Calculation of(NA ND).21 5.4.3 Corrections for equivalent circuit effects.21 5.4.4 Corrections for high trap concentrations and for voltage pulse height.23 5.4.5 pcVVtechnique for measuring NT.23 5.4.65.5 Majority-carrier deep levels in p-type HPGe.24 5.6 Majority-carrier deep levels in n-type HPGe.25 5.7 Report.26 6 Crystallographic properties.26 6.1 General.26 6.2 Crystallographic orientation.26 6.3 Sample preparation.26 Copyrighted material licensed to BR Demo by Thomson Reuters(Scientific)

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