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IEC_60747
2005
INTERNATIONAL STANDARD IEC60747-7-5 First edition2005-08 Semiconductor devices Discrete devices Part 7-5:Bipolar transistors for power switching applications Reference number IEC 60747-7-5:2005(E)LICENSED TO MECON Limited.-RANCHI/BANGALOREFOR INTERNAL USE AT THIS LOCATION ONLY,SUPPLIED BY BOOK SUPPLY BUREAU.Publication numbering As from 1 January 1997 all IEC publications are issued with a designation in the 60000 series.For example,IEC 34-1 is now referred to as IEC 60034-1.Consolidated editions The IEC is now publishing consolidated versions of its publications.For example,edition numbers 1.0,1.1 and 1.2 refer,respectively,to the base publication,the base publication incorporating amendment 1 and the base publication incorporating amendments 1 and 2.Further information on IEC publications The technical content of IEC publications is kept under constant review by the IEC,thus ensuring that the content reflects current technology.Information relating to this publication,including its validity,is available in the IEC Catalogue of publications(see below)in addition to new editions,amendments and corrigenda.Information on the subjects under consideration and work in progress undertaken by the technical committee which has prepared this publication,as well as the list of publications issued,is also available from the following:IEC Web Site(www.iec.ch)Catalogue of IEC publications The on-line catalogue on the IEC web site(www.iec.ch/searchpub)enables you to search by a variety of criteria including text searches,technical committees and date of publication.On-line information is also available on recently issued publications,withdrawn and replaced publications,as well as corrigenda.IEC Just Published This summary of recently issued publications(www.iec.ch/online_news/justpub)is also available by email.Please contact the Customer Service Centre(see below)for further information.Customer Service Centre If you have any questions regarding this publication or need further assistance,please contact the Customer Service Centre:Email:custserviec.ch Tel:+41 22 919 02 11 Fax:+41 22 919 03 00 LICENSED TO MECON Limited.-RANCHI/BANGALOREFOR INTERNAL USE AT THIS LOCATION ONLY,SUPPLIED BY BOOK SUPPLY BUREAU.INTERNATIONAL STANDARD IEC60747-7-5 First edition2005-08 Semiconductor devices Discrete devices Part 7-5:Bipolar transistors for power switching applications IEC 2005 Copyright-all rights reserved No part of this publication may be reproduced or utilized in any form or by any means,electronic or mechanical,including photocopying and microfilm,without permission in writing from the publisher.International Electrotechnical Commission,3,rue de Varemb,PO Box 131,CH-1211 Geneva 20,SwitzerlandTelephone:+41 22 919 02 11 Telefax:+41 22 919 03 00 E-mail:inmailiec.ch Web:www.iec.ch U For price,see current cataloguePRICE CODE Commission Electrotechnique InternationaleInternational Electrotechnical Commission LICENSED TO MECON Limited.-RANCHI/BANGALOREFOR INTERNAL USE AT THIS LOCATION ONLY,SUPPLIED BY BOOK SUPPLY BUREAU.2 60747-7-5 IEC:2005(E)CONTENTS FOREWORD.3 1 Scope.5 2 Normative references.5 3 Terms and definitions.5 4 Letter symbols Energies.6 5 Essential ratings and characteristics.6 5.1 Ratings(limiting values).6 5.2 Characteristics.7 6 Measuring methods.9 6.1 Verification of ratings(limiting values).9 6.2 Methods of measurement.19 7 Acceptance and reliability.22 7.1 Endurance and reliability tests,and test methods.22 7.2 Type tests and routine tests.25 Figure 1 Test circuit for collector current.10 Figure 2 Test circuit for peak collector current.11 Figure 3 Test circuit for base current.12 Figure 4 Test circuit for peak base current.12 Figure 5 Circuit for testing the collector-base voltage VCBS,VCBR,VCBX.13 Figure 6 Circuit for testing the collector-emitter voltage VCES,VCER,VCEX.14 Figure 7 Circuit for testing the emitter-base voltages VEB.15 Figure 8 Test circuit of reverse bias safe operating area(RBSOA).16 Figure 9a Waveforms of base current IB and collector current IC during turn-off.16 Figure 9b RBSOA curves during turn-off.17 Figure 10 Circuit for testing safe operating pulse duration at load short circuit.(SCSOA).18 Figure 11 Waveforms of base current IB,collector current IC and voltage VCE during load short circuit condition SCSOA.18 Figure 12 Circuit diagram for measuring turn-on intervals and energy.19 Figure 13 Waveforms during turn-on intervals.20 Figure 14 Waveforms during turn-off intervals.21 Figure 15a Circuit for high temperature blocking(Method 1).23 Figure 15b Circuit for high temperature blocking(Method 2).23 Figure 15 Test circuit for high temperature blocking.23 Figure 16 Circuit for Intermittent operating life.24 Figure 17 Expected number of cycles versus temperature rise Tvj.25 Table 1 Failure defining characteristics and failure criteria.9 Table 2 Failure-defining characteristics for endurance and reliability tests.22 Table 3 Minimum items of type and routine tests for transistors when applicable.