=================================DOI:10．13290/j．cnki．bdtjs．2023．01．00954半导体技术第48卷第1期2023年1月6～27GHzGaAs宽带功率放大器MMIC冯晓冬，何美林，柳林，冯彬，刘亚男(河北雄安太芯电子科技有限公司，石家庄050051)摘要:基于90nmGaAs赝配高电子迁移率晶体管(PHEMT)工艺研制了一款6～27GHz宽带功率放大器单片微波集成电路(MMIC)。采用预匹配电路降低带内低频段的增益，将宽带电路设计简化为窄带电路设计。采用滤波器匹配网络，将GaAsPHEMT的栅极等效电容和漏极等效电容加入匹配电路中，缩小了宽带功率放大器MMIC的尺寸。在片测试结果表明，该放大器MMIC在6～27GHz内，增益大于23dB，增益平坦度约为±0.8dB，饱和输出功率大于20.9dBm。放大器MMIC的工作电压为4V，电流为125mA，芯片尺寸为1.69mm×0.96mm。该宽带功率放大器MMIC有利于降低宽带系统的复杂度和成本。关键词:GaAs;单片微波集成电路(MMIC);宽带;功率放大器;预匹配中图分类号:TN43;TN722.16文献标识码:A文章编号:1003－353X(2023)01－0054－056－27GHzGaAsBroadbandPowerAmplifierMMICFengXiaodong，HeMeilin，LiuLin，FengBin，LiuYanan(HebeiXionganTaixinElectronicsTechnologyCo．，Ltd．，Shijiazhuang050051，China)Abstract:Basedon90nmGaAspseudomorphichighelectronmobilitytransistor(PHEMT)tech-nology，a6－27GHzbroadbandpoweramplifiermonolithicmicrowaveintegratedcircuit(MMIC)wasdeveloped．Thepre-matchingcircuitwasusedtoreducethegainofthelowfrequencyband，sothatthedesignofthewidebandcircuitwassimplifiedtoanarrowbandcircuitdesign．Usingthefiltermatchingnetwork，thegateequivalentcapacitanceandthedrainequivalentcapacitanceoftheGaAsPHEMTwereaddedintothematchingcircuit，reducingthesizeofthebroadbandpoweramplifierMMIC．Theresultsofon-chiptestshowthatthegainoftheamplifierMMICismorethan23dB，thesaturationoutputpowerisabove20.9dBm，andthegainflatnessisabout±0.8dBinthefrequencyrangeof6－27GHz．TheampliferMMICoperatesat4Vwith125mAcurrent．Thechipsizeis1.69mm×0.96mm．Thisbroad-bandamplifierMMICisbeneficialtoreducingthecomplexityandcostofthebroadbandsystem．Keywords:GaAs;monolithicmicrowaveintegratedcircuit(MMIC);broadband;poweramplifier;pre-matchingEEACC:2570A;12200引言雷达系统、微波测...
