Designation:F1771–97StandardTestMethodforEvaluatingGateOxideIntegritybyVoltageRampTechnique1ThisstandardisissuedunderthefixeddesignationF1771;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thetechniquesoutlinedinthisstandardareforthepurposeofstandardizingtheprocedureofmeasurement,analy-sis,andreportingofoxideintegritydatabetweeninterestedparties.Thistestmethodmakesnorepresentationregardingactualdevicefailureratesoracceptance/rejectioncriteria.Whilesomesuggestionsfordataanalysisareincludedinlatersectionsofthistestmethod,interpretationofresultsisbeyondthescopeofthisstandard.Anysuchinterpretationsshouldbeagreeduponbetweeninterestedpartiespriortotesting.Forexample,avarietyoffailurecriteriaareincludedtopermitseparationofso-calledintrinsicandextrinsicoxidefailures.1.2Thistestmethodcoverstheprocedureforgagingtheelectricalstrengthofsilicondioxidethinfilmswiththicknessesrangingfromapproximately3nmto50nm.Intheanalysisoffilmsof4nmorless,theimpactofdirecttunnelingonthecurrent-voltagecharacteristics,andhencethespecifiedfailurecriteriadefinedin5.4,mustbetakenintoaccount.Sinceoxideintegritystronglydependsonwaferdefects,contamination,cleanliness,aswellasprocessing,theusersofthistestmethodareexpectedtoincludewafermanufacturersanddevicemanufacturers.1.3Thistestmethodisnotstructurespecific,butnotesregardingoptionsfordifferentstructuresmaybefoundintheappendix.Thethreemostlikelystructuresaresimpleplanarmetal-oxidesemiconductor(MOS-capacitors)(fabricatedormercuryprobe),variousisolationstructures(forexample,localoxidationofsilicon(LOCOS)),andfieldeffecttransistors.Thistestmethodassumesthatalowresistanceohmiccontactismadetothebacksideofeachwaferineachcase.Foramoredetaileddiscussionofthedesignandevaluationofteststruc-turesforthistestmethod,thereaderisreferredtotheEIA/JEDE...
