ASTM_F_951_-_01.pdf

Designation:F 951 01Standard Test Method forDetermination of Radial Interstitial Oxygen Variation inSilicon Wafers1This standard is issued under the fixed designation F 951;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon(e)indicates an editorial change since the last revision or reapproval.1.Scope1.1 This test method covers test sight selection and datareduction procedures for radial variation of the interstitialoxygen concentration in silicon slices typically used in themanufacture of microelectronic semiconductor devices.1.2 This test method is intended as both a referee andproduction test through selection of an appropriate test positionplan.1.3 The interstitial oxygen content may be measured inaccordance with Test Methods F 1188,F 1366 or F 1619,DIN50438/1,JEITA 61,or any other procedure agreed upon by theparties to the test.1.4 Acceptable sample surface finishes are specified in theapplicable test methods.This test method is suitable for use onchemically etched,single-side polished and double-side pol-ished silicon slices with no surface defects that could adverselychange infrared radiation transmission through the slice,pro-vided that appropriate test methods for oxygen content areselected.1.5 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:F 533 Test Method for Thickness and Thickness Variationof Silicon Wafers2F 1188 Test Method for Interstitial Atomic Oxygen Contentof Silicon by Infrared Absorption2F 1366 Test Method for Measuring Oxygen Concentrationin Heavily Doped Silicon Substrates by Secondary IonMass Spectrometry2F 1619 Test Method for Measurement of Interstitial OxygenContent of Silicon Wafers by Infrared Absorption Spec-troscopy with p-Polarized Radiation Incident at the Brew-ster Angle22.2DIN Standard:DIN 50438/1 Test of Materials for Semiconductor Technol-ogy;Determination of Impurity Content in Silicon byInfrared Absorption;Oxygen32.3JEITA Standard:JEITA 61 Standard Test Method for Interstitial AtomicOxygen Content of Silicon by Infrared Absorption42.4ANSI Standard:ANSI/ASQC 21.453.Summary of Test Method3.1 Instruments are selected and qualified according to thetest procedure chosen.3.2 Measurements are made at the specified test locationsand a relative oxygen variation is calculated by one of fouravailable plans.4.Significance and Use4.1 The presence of oxygen can be beneficial to certainmanufacturing operations by preventing the formation ofprocess-induced defects.To the extent that this is true,itbecomes important that the oxygen be uniformly distributedover the entire slice.4.2 Multiple test plans are included to satisfy a variety ofrequirements.The characteristic shape and magnitude of oxy-gen concentration distributions in crystals are functions of thecrystal growth process.Although the specified test plans areintended to cover oxygen concentration distributions which aretypically found,other distributions may occur.In such cases,itmay be necessary to use test positions other than thosespecified in order to adequately describe the distributionpattern.4.3 This test method may be used for process control,1This test method is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.06 on SiliconMaterials and Process Control.Current edition approved Oct.10,2001.Published December 2001.Originallypublished as F 951 85.Last previous edition F 951 96.2Annual Book of ASTM Standards,Vol 10.05.3DIN 50438/1 is the responsibility of DIN Committee NMP 221,with whichASTM F-1 maintains close liason.DIN 50438/1 is available from Beuth VerlagGmbH,Burggrafenstrasse 4-10,D-1000,Berlin 30,Germany.4JEITA 61 is the responsibility of the JEITA Silicon Wafer Committee,withwhich ASTM F01 maintains close liason.JEITA 61 is available from the JapanElectronics and Information Technology Industries Association,Kikai-Shinko-Kaikan,3-5-8 Shiba koen,Minato-ku,Tokyo 105-0011,Japan.5Available from American Society for Quality Control(ASQC),P.O.Box 3005Milwaukee,WI 53201-9404.1Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959,United States.research and development,and materials acceptance purposes.In the absence of an interlaboratory evaluation of the precisionof this test method,its use for materials acceptance is notrecommended unless the parties involved establish the degreeof correlation which can be expected(see Section 11).5.Interferences5.1 Variations of optical thickness can be caused by thick-ness or surface finish variations,or both.5.2 Beam size differences from instrum