ASTM_F_616M_-_96_2003.pdf

Designation:F 616M 96(Reapproved 2003)METRICStandard Test Method forMeasuring MOSFET Drain Leakage Current Metric1This standard is issued under the fixed designation F 616M;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon(e)indicates an editorial change since the last revision or reapproval.1.Scope1.1 This test method covers the measurement of MOSFET(Note 1)drain leakage current.NOTE1MOS is an acronym for metal-oxide semiconductor;FET isan acronym for field-effect transistor.1.2 This test method is applicable to all enhancement-modeand depletion-mode MOSFETs.This test method specifiespositive voltage and current,conventions specifically appli-cable to n-channel MOSFETs.The substitution of negativevoltage and negative current makes the method directly appli-cable to p-channel MOSFETs.1.3 This d-c test method is applicable for the range of drainvoltages greater than 0 V but less than the drain breakdownvoltage.1.4 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:E 178 Practice for Dealing with Outlying Observations23.Terminology3.1 Definition:3.1.1 drain leakage current of a MOSFETthe d-c currentfrom the drain terminal when the relationship of the gatevoltage to the threshold voltage is such that the MOSFET is inthe OFF state.4.Summary of Test Method4.1 The drain current of the MOSFET under test is mea-sured at a specified drain voltage with the MOSFET in the OFFcondition.4.2 Before this test method can be implemented,test con-ditions appropriate for the MOSFET to be measured must beselected and agreed upon by the parties to the test.Conditionswill vary from one MOSFET type to another and are deter-mined in part by the intended application.The following itemsare not specified by this test method,and shall be agreed uponbetween the parties to the test.4.2.1 Permissible range of ambient temperature.4.2.2 Drain to source voltage VDSat which the measurementis to be made.4.2.3 Gate to source voltage VGSat which the measurementis to be made.For most MOSFETs,use a gate voltageapproximately 5 V different from the saturated thresholdvoltage,in the direction of lesser drain current.NOTE2To avoid the possibility of forward biasing the gate protectiondiodes,the gate should not be permitted to have a potential with respectto the substrate(or source,if no substrate connection is provided)of a signopposite that of the drain potential with respect to the substrate(orsource),unless the manufacturers specifications expressly permit such acondition.5.Significance and Use5.1 The drain leakage current is a basic MOSFET parameterthat must be determined for the design and application ofdiscrete MOSFETs and MOS-integrated circuits.The drainleakage current of the MOSFET is utilized in circuit design todetermine performance attributes such as power dissipation,noise margin,charge storage time,amplifier effects,etc.,ofdigital and analog circuitry.6.Interferences6.1 Care must be taken to prevent electrical voltage over-stress damage to the gate dielectric as a result of devicehandling during the leakage current measurement.Undercertain conditions,electrostatic discharge from the humanbody can result in permanent damage to the gate insulator.6.2 Valid drain leakage current data will be obtained only ifthe magnitude of the drain voltage applied during the drainleakage current measurement is less than the drain-substratejunction breakdown voltage.1This test method is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.11 on Quality andHardness Assurance.Current edition approved June 10,1996.Published August 1996.Originallypublished as F 616 80.Last previous edition F 616 92.2Annual Book of ASTM Standards,Vol 14.02.1Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959,United States.6.3 The high(positive)input of the ammeter(A1)mustalways be connected to the drain side of the MOSFET,regardless of the polarity of the device.Note that with such aconnection,the ammeter will give negative current readings forn-channel MOSFETs.The reason for connecting the highinput to the drain side of the MOSFET is to reduce errors in themeasurement of drain current due to meter-leakage currents.Electronic ammeters are designed for low internal-leakageoperation only when the high input is connected to thelow-leakage,high-resistance side of the current path.6.4 The ambient temperature must be maintained within thespecified range(see 4.2.1).6.5 The measurement method described in this test methodis valid only if the MOSFET sta