Designation:F616M–96(Reapproved2003)METRICStandardTestMethodforMeasuringMOSFETDrainLeakageCurrent[Metric]1ThisstandardisissuedunderthefixeddesignationF616M;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1ThistestmethodcoversthemeasurementofMOSFET(Note1)drainleakagecurrent.NOTE1—MOSisanacronymformetal-oxidesemiconductor;FETisanacronymforfield-effecttransistor.1.2Thistestmethodisapplicabletoallenhancement-modeanddepletion-modeMOSFETs.Thistestmethodspecifiespositivevoltageandcurrent,conventionsspecificallyappli-cableton-channelMOSFETs.Thesubstitutionofnegativevoltageandnegativecurrentmakesthemethoddirectlyappli-cabletop-channelMOSFETs.1.3Thisd-ctestmethodisapplicablefortherangeofdrainvoltagesgreaterthan0Vbutlessthanthedrainbreakdownvoltage.1.4Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappro-priatesafetyandhealthpracticesanddeterminetheapplica-bilityofregulatorylimitationspriortouse.2.ReferencedDocuments2.1ASTMStandards:E178PracticeforDealingwithOutlyingObservations23.Terminology3.1Definition:3.1.1drainleakagecurrentofaMOSFET—thed-ccurrentfromthedrainterminalwhentherelationshipofthegatevoltagetothethresholdvoltageissuchthattheMOSFETisintheOFFstate.4.SummaryofTestMethod4.1ThedraincurrentoftheMOSFETundertestismea-suredataspecifieddrainvoltagewiththeMOSFETintheOFFcondition.4.2Beforethistestmethodcanbeimplemented,testcon-ditionsappropriatefortheMOSFETtobemeasuredmustbeselectedandagreeduponbythepartiestothetest.ConditionswillvaryfromoneMOSFETtypetoanotherandaredeter-minedinpartbytheintendedapplication.Thefollowingitemsarenotspecifiedbythistestmethod,andshallbeagreeduponbetweenthepartiestothetest.4.2.1Permissiblerangeofambienttemperature.4.2.2Draintosourcevolta...
