Designation:F358–83(Reapproved2002)StandardTestMethodforWavelengthofPeakPhotoluminescenceandtheCorrespondingCompositionofGalliumArsenidePhosphideWafers1ThisstandardisissuedunderthefixeddesignationF358;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thistestmethodcoversthetechniquesusedtodeter-minethewavelengthofthephotoluminescencepeakandthemolepercentphosphoruscontentofgalliumarsenidephos-phide,GaAs(1x)Px.1.2Photoluminescencemeasurementsindicatethecompo-sitiononlyintheilluminatedregionandonlywithinaveryshortdistancefromthesurface,adistancelimitedbythepenetrationoftheradiationandthediffusionlengthofthephoto-generatedcarriers,ascontrastedtoX-raymeasurementswhichsampleamuchdeepervolume.1.3Thistestmethodislimitedbythesurfacepreparationproceduretoapplicationtoepitaxiallayersofthesemiconduc-torgrowninavapor-phasereactoronaflatsubstrate.Itisdirectlyapplicableton-typeGaAs(1x)Pxwiththewavelength,lPL,ofthephotoluminescencepeakintherangefrom640to670nm,correspondingtomolepercentphosphorusintherangefrom36to42%(x=0.36to0.42).ThecalibrationdataprovidedforthedeterminationofxfromlPLisapplicabletomaterialdopedwithtelluriumorseleniumatconcentrationsintherangefrom1016to1018atoms/cm3.1.4Theprincipleofthistestmethodismorebroadlyapplicable.Othermaterialpreparationmethodsmayrequiredifferentsurfacetreatments.Extensiontootherdopants,dopingrangesorcompositionrangesrequiresfurtherworktorelatelPLtothephosphoruscontentasdeterminedbyX-raymea-surementsoftheprecisedimensionsoftheunitcelluponwhichthecalibrationdataarebased.Itisessentialthatcalibrationspecimenshaveuniformcompositioninthevolumesampled.1.5Thistestmethodisessentiallynondestructive.Itre-quiresalightetchingofthesampletobemeasured.Theremovalofalayerofmaterialapproximately0.5to1.0µminthicknessisrequired.Thisetchingdoesno...
