Designation:F81–00DIN50435StandardTestMethodforMeasuringRadialResistivityVariationonSiliconWafers1ThisstandardisissuedunderthefixeddesignationF81;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thistestmethod2providesproceduresforthedetermi-nationofrelativeradialvariationofresistivityofsemiconduc-torwaferscutfromsiliconsinglecrystalsgrowneitherbytheCzochralskiorfloating-zonetechnique.1.2ThistestmethodprovidesproceduresforusingTestMethodF84forthefour-pointprobemeasurementofradialresistivityvariation.1.3Thistestmethodyieldsameasureofthevariationinresistivitybetweenthecenterandselectedouterregionsofthespecimen.Theamountofinformationobtainedregardingthemagnitudeandformofthevariationintheinterveningregionswhenusingthefour-pointprobearraydependsonthesamplingplanchosen(see7.2).Theinterpretationofthevariationsmeasuredasradialvariationsmaybeinerrorifazimuthalvariationsonthewaferoraxialvariationsalongthecrystallengtharenotnegligible.1.4Thistestmethodcanbeappliedtosinglecrystalsofsiliconincircularwaferform,thethicknessofwhichislessthanone-halfoftheaverageprobespacing,andthediameterofwhichisatleast15mm(0.6in.).Measurementscanbemadeonanyspecimenforwhichreliableresistivitymeasurementscanbeobtained.TheresistivitymeasurementprocedureofTestMethodF84hasbeentestedonspecimenshavingresistivitiesbetween0.0008and2000V·cmforp-typesiliconandbetween0.0008and6000V·cmforn-typesilicon.Geometricalcorrec-tionfactorsrequiredforthesemeasurementsareincludedforthecaseofstandardwaferdiameters,andareavailableintabulatedformforothercases.3NOTE1—Inthecaseofwaferswhosethicknessisgreaterthantheaveragespacingofthemeasurementprobes,nogeometricalcorrectionfactorisavailableexceptformeasurementatthecenterofthewaferface.1.5Severalsamplingplansaregivenwhichspecifysetsofmeasurementsitesonthewa...
