Designation:F1727–97StandardPracticeforDetectionofOxidationInducedDefectsinPolishedSiliconWafers1ThisstandardisissuedunderthefixeddesignationF1727;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thispracticecoversthedetectionofcrystallinedefectsinthesurfaceregionofsiliconwafers.Thedefectsareinducedorenhancedbyoxidationcyclesencounteredinnormaldeviceprocessing.Anatmosphericpressure,oxidationcyclerepresen-tativeofbipolar,metal-oxide-silicon(MOS)andCMOStech-nologiesisincluded.Thispracticeisrequiredtorevealstrainfieldsarisingfromthepresenceofprecipitates,oxidationinducedstackingfaults,andshallowetchpits.Slipisalsorevealedthatariseswheninternaloredgestressesareappliedtothewafer.1.2Applicationofthispracticeislimitedtospecimensthathavebeenchemicalorchemical/mechanicalpolishedtore-movesurfacedamagefromatleastonesideofthespecimen.Thispracticemayalsobeappliedtodetectionofdefectsinepitaxiallayers.1.3Thesurfaceofthespecimenoppositethesurfacetobeinvestigatedmaybedamageddeliberatelyorotherwisetreatedforgetteringpurposesorchemicallyetchedtoremovedamage.1.4Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappro-priatesafetyandhealthpracticesanddeterminetheapplica-bilityofregulatorylimitationspriortouse.2.ReferencedDocuments2.1ASTMStandards:D5127GuideforElectronicGradeWater2F1241TerminologyofSiliconTechnology3F1725GuideforAnalysisofCrystallographicPerfectionofSiliconIngots3F1726GuideforAnalysisofCrystallographicPerfectionofSiliconWafers3F1809GuideforSelectionandUseofEtchingSolutionstoDelineateStructuralDefectsinSilicon3F1810TestMethodforCountingPreferentiallyEtchedorDecoratedSurfaceDefectsinSiliconWafers32.2SEMISpecifications:4SEMIC-1SpecificationforReagentsSEMIC-3Specificatio...
