ASTM_F_980_-_10e1.pdf

Designation:F980101Standard Guide forMeasurement of Rapid Annealing of Neutron-InducedDisplacement Damage in Silicon Semiconductor Devices1This standard is issued under the fixed designation F980;the number immediately following the designation indicates the year of originaladoption or,in the case of revision,the year of last revision.Anumber in parentheses indicates the year of last reapproval.Asuperscriptepsilon()indicates an editorial change since the last revision or reapproval.1NOTEFigure 2 was corrected editorially in October 2014.1.Scope1.1 This guide defines the requirements and procedures fortesting silicon discrete semiconductor devices and integratedcircuits for rapid-annealing effects from displacement damageresulting from neutron radiation.This test will produce degra-dation of the electrical properties of the irradiated devices andshould be considered a destructive test.Rapid annealing ofdisplacement damage is usually associated with bipolar tech-nologies.1.1.1 Heavy ion beams can also be used to characterizedisplacement damage annealing(1)2,but ion beams havesignificant complications in the interpretation of the resultingdevice behavior due to the associated ionizing dose.The use ofpulsed ion beams as a source of displacement damage is notwithin the scope of this standard.1.2 The values stated in SI units are to be regarded asstandard.No other units of measurement are included in thisstandard.1.3 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to consult andestablish appropriate safety and health practices and deter-mine the applicability of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:3E264 Test Method for Measuring Fast-Neutron ReactionRates by Radioactivation of NickelE265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32E666 Practice for Calculating Absorbed Dose From Gammaor X RadiationE720 Guide for Selection and Use of Neutron Sensors forDetermining Neutron Spectra Employed in Radiation-Hardness Testing of ElectronicsE721 Guide for Determining Neutron Energy Spectra fromNeutron Sensors for Radiation-Hardness Testing of Elec-tronicsE722 Practice for Characterizing Neutron Fluence Spectra inTerms of an Equivalent Monoenergetic Neutron Fluencefor Radiation-Hardness Testing of ElectronicsE1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic PartsE1855 Test Method for Use of 2N2222A Silicon BipolarTransistors as Neutron Spectrum Sensors and Displace-ment Damage MonitorsE1894 Guide for Selecting Dosimetry Systems for Applica-tion in Pulsed X-Ray SourcesF1032 Guide for Measuring Time-Dependent Total-DoseEffects in Semiconductor Devices Exposed to PulsedIonizing Radiation(Withdrawn 1994)43.Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 annealing functionthe ratio of the change in thedisplacement damage metric(as manifested in device paramet-ric measurements)as a function of time following a pulse ofneutrons and the change in the residual late-time displacementdamage metric remaining at the time the initial damageachieves quasi equilibrium.3.1.1.1 DiscussionThis late-time quasi-equilibrium timeis sometimes set to a fixed time on the order of approximately1000 s,or it is,as in Test Method E1855,set to a displacementdamage measurement made after low temperature thermalstabilizing anneal procedure of 80C for 2 h.Fig.1 shows anexample of the annealing function for a 2N2907 pnp bipolar1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved Dec.1,2010.Published January 2011.Originallyapproved in 1986.Last previous edition approved in 2003 as F980M 96(2003).DOI:10.1520/F0980-10E01.2The boldface numbers in parentheses refer to the list of references at the end ofthis standard.3For referenced ASTM standards,visit the ASTM website,www.astm.org,orcontact ASTM Customer Service at serviceastm.org.For Annual Book of ASTMStandards volume information,refer to the standards Document Summary page onthe ASTM website.4The last approved version of this historical standard is referenced onwww.astm.org.Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1 transistor with an operational current of 2 mA during and afterthe irradiation.The displacement damage metric of interest isoften the reciprocal gain change in a bipolar device.Thisdamage metric is widely used since the Messenger-Sprattequation(2,3)states that this quantity,at late time,is propor-tional to the 1-MeV(Si)equivalent fluence,see Practice E722.In this case theS1G21G0D5 k(1)is the 1-MeV(Si)-equivalent fluence,k is a device-specificdisplacement damage constant referred to as the Messengerconstant,G0is the initial gain of