Designation:F672–88(Reapproved1995)e1StandardTestMethodforMeasuringResistivityProfilesPerpendiculartotheSurfaceofaSiliconWaferUsingaSpreadingResistanceProbe1ThisstandardisissuedunderthefixeddesignationF672;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.e1NOTE—KeywordswereaddededitoriallyinJanuary1995.INTRODUCTIONThemeasurementofresistivityprofilebymeansofaspreadingresistanceprobeisacomplexprocedure,withanumberofcommonlyacceptedoptionsforcarryingoutthecomponentmeasure-ments.ASTMCommitteeF-1onElectronicshasdesignedthistestmethodtoallowarangeofchoices,consistentwithgoodpractice,fortheelectronicconfiguration,typeofspecimenpreparation,andmethodformeasuringbevelangle.Itemsnotspecifiedbythistestmethodaretobeagreeduponbythepartiestothetest,usuallyfromaspecifiedsetofchoicesinthecontextofageneralrestriction.Themeasurementofbevelangleisparticularlydifficulttospecify,astheselectionofanappropriatemethoddependsnotonlyontherangeofanglemeasuredbutalsoonthequalityoftheinstrumentationavailableforthatmethod.Althoughideallythebeveledsurfaceandtheoriginalsurfaceshouldbetwoplanesintersectingalongastraightline,theactualgeometrymaydifferfromthisideal,furthercomplicatingthemeasurement.ThesepointsarerecognizedinthesectiononinterferencesandinAppendixX1andassociatedreferencesonthebevel-anglemeasurement.1.Scope1.1Thistestmethodcoversmeasurementoftheresistivityprofileperpendiculartothesurfaceofasiliconwaferofknownorientationandtype.NOTE1—Thistestmethodmayalsobeapplicabletoothersemicon-ductormaterials,butfeasibilityandprecisionhavebeenevaluatedonlyforsiliconandgermanium.1.2Thistestmethodmaybeusedonepitaxialfilms,substrates,diffusedlayers,orion-implantedlayers,oranycombinationofthese.1.3Thistestmethodiscomparativeinthattheresistivityprofileofanunknownspecimenisdeterminedbycomparingitsme...
