ASTM_F_154_-_00.pdf

Designation:F 154 00Standard Guide forIdentification of Structures and Contaminants Seen onSpecular Silicon Surfaces1This standard is issued under the fixed designation F 154;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon(e)indicates an editorial change since the last revision or reapproval.1.Scope1.1 The purpose of this guide is to list,illustrate,andprovide reference for various characteristic features and con-taminants that are seen on highly specular silicon wafers.Recommended practices for delineation and observation ofthese artifacts are referenced.The artifacts described in thisguide are intended to parallel and support the content of theSEMI M18.These artifacts and common synonyms are ar-ranged alphabetically in Tables 1 and 2 and illustrated in Figs.1-68.2.Referenced Documents2.1 ASTM Standards:F 523 Practice for Unaided Visual Inspection of PolishedSilicon Wafer Surfaces2F 1241 Terminology of Silicon Technology2F 1725 Guide forAnalysis of Crystallographic Perfection ofSilicon Ingots2F 1726 Guide forAnalysis of Crystallographic Perfection ofSilicon Wafers2F 1727 Practice for Detection of Oxidation Induced Defectsin Polished Silicon Wafers2F 1809 Guide for Selection and Use of Etching Solutions toDelineate Structural Defects in Silicon2F 1810 Test Method for Counting Preferentially Etched orDecorated Surface Defects in Silicon Wafers22.2SEMI Standard:M18 Format for Silicon Wafer Specification Form for OrderEntry33.Terminology3.1 Related terminology may be found in TerminologyF 1241.4.Significance and Use4.1 This guide contains a compilation of the most com-monly observed singularly discernible structures on specularsilicon surfaces.Ambiguities and uncertainties regarding sur-face defects may be resolved by reference to this guide.Thereis close alignment between this guide and common specifica-tions used for the purchase of silicon wafers.5.Interferences5.1 Defects,structures,features,or artifacts revealed orenhanced by the referenced methods and exhibited in this guidemust be carefully interpreted.Unless utmost care is exercised,the identification of the structure may be ambiguous.6.Procedure6.1 Refer to Practices F 523 and F 1727,Guides F 1725,F 1726,and F 1809,and Test Method F 1810.7.Keywords7.1 contaminant;defects;dislocation;epitaxial;fracture;preferential etch;scratch;shallow pit;silicon;slip;stackingfault1This guide is under the jurisdiction of Committee F01 on Electronics and is thedirect responsibility of Subcommittee F01.06 on Silicon Materials and ProcessControl.Current edition approved June 10,2000.Published September 2000.Originallypublished as F 154 72T.Last previous edition F 154 94.2Annual Book of ASTM Standards,Vol 10.05.3Available from Semiconductor Equipment and Materials International,805 E.Middlefield Rd.,Mountain View,CA 94043.TABLE 1 Wafer Structural DefectsA,BDefectCommon Synonyms andAcronymsIllustratingFiguresRelevantASTMStandardDislocation etch pitEtch Pit,Pit1-5F 1725Epitaxial stacking faultepi stacking fault,(ESF)6-10F 1726LineageGrain Boundary11F 1725Oxidation induced stackingfaultoxidation stacking fault,(OSF),oxidation inducedstacking fault(OISF)12-18F 1727F 1809Oxide precipitatesbulk micro-defect,(BMD),bulk precipitate19F 1727F 1809Shallow pitsS-pit,saucer pit20-21F 1727F 1809Slip22-25F 1725F 1727F 1809Swirl26-27F 1725F 1727F 1809Twin28-30F 1725AMagnifications given in the attached illustrations are for an original frame sizeof 50350-mm except as noted.BUnless otherwise noted,all attached figures illustrate polished silicon wafersurfaces.1Copyright ASTM,100 Barr Harbor Drive,West Conshohocken,PA 19428-2959,United States.TABLE 2 Polished Surface Visual CharacteristicsDefectCommon Synonyms andAcronymsIllustratingFigureRelevantASTMStandardsArea contaminationContamination,foreignmatter,residue31-32F 523CrackCleavage,fracture33-38F 523CraterSlurry ring39F 523Crows feetContact damage40F 523DimpleDepression41-42F 523Dopant striation ringStriation43F 523Edge chipChip44-47F 523Edge crackCrack48F 523Edge crown49F 523Epitaxial large point defectlarge light point defect,(LLPD),spike50F 523Foreign matterContamination,residue51-52F 523GroovePolished over scratch,microscratch53-54F 523Haze55-56F 523Localized lazer scatterers(particle contamination)large light scatterers,(LLS)57-58F 523Mound59F 523Orange peelRoughness60F 523PitsAir pocket,hole,crystaloriginated pit,(COP)insufficient polish61-63F 523Saw mark64F 523ScratchesHandling damage65-67F 523Stain68F 523FIG.1 Dislocation Etch Pits on(111)Silicon,Following 3-Min SirtlEtch,Magnification 1103.FIG.2 Dislocation Etch Pits on(110)Silicon,Following 5-MinWright Etch,Magnification 1103.FIG.3 Dislocation Etch Pits on(100)Silicon Following Schimmel(B)Preferential Etch,Magnification 3203.FIG.4 Dislocation Etch Pits on(100)Silicon Following Sirtl Etch,Magnification 40