Designation:F1152–93(Reapproved2001)StandardTestMethodforDimensionsofNotchesonSiliconWafers1ThisstandardisissuedunderthefixeddesignationF1152;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thistestmethodcoversanondestructiveproceduretodeterminewhetherornotthedimensionsoffiducialnotchesonsiliconwafersfallwithinspecifiedlimits.1.2ThevaluesstatedinSIunitsaretoberegardedasthestandard.Thevaluesgiveninparenthesesareforinformationonly.1.3Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappro-priatesafetyandhealthpracticesanddeterminetheapplica-bilityofregulatorylimitationspriortouse.2.ReferencedDocuments2.1ASTMStandards:E122PracticeforChoiceofSampleSizetoEstimateaMeasureofQualityofaLotorProcess22.2MilitaryStandard:MIL-STD-105ESamplingProceduresandTablesforIn-spectionbyAttributes32.3SEMIStandard:M1SpecificationsforMonocrystallineSiliconWafers43.SummaryofTestMethod3.1Thewaferisalignedinpositiononanopticalcompara-torandtheimageofthenotchiscomparedwithaseriesoftemplatesprojectedonthescreenofthecomparator.3.2First,thewaferisalignedsothatthesidesoftheimageofthenotchcontacttheimageofthealignmentpinusedtofixthepositionofthewaferinuse.Inthiscase,theimageofthenotchbottommustlieonorbelowthedesignatedlineonthenotchform/depthtemplateandtheimageofthewaferedgemustlieonoraboveanotherdesignatedlineonthetemplate.3.3Thewaferisthenalignedsothattheimageofthewaferedgecoincideswiththewaferperipherylineonthetemplate.Inthiscasetheimageofthenotchbottommustliebetweenmaximumandminimumlinesonthetemplate.3.4Theimageofthenotchsidesarecomparedwithaseriesofanglesonthenotchangletemplateandtheanglethatmakesthebestfitischosenasthevalueofthenotchangle.3.5Notestisprovidedfortheblendradiusattheapexofthe...
