Designation:F1259M–96(Reapproved2003)METRICStandardGuideforDesignofFlat,Straight-LineTestStructuresforDetectingMetallizationOpen-CircuitorResistance-IncreaseFailureDuetoElectromigration[Metric]1ThisstandardisissuedunderthefixeddesignationF1259M;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginaladoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscriptepsilon(e)indicatesaneditorialchangesincethelastrevisionorreapproval.1.Scope1.1Thisguidecoversrecommendeddesignfeaturesforteststructuresusedinacceleratedstresstests,asdescribedinTestMethodF1260M,tocharacterizethefailuredistributionofinterconnectmetallizationsthatfailduetoelectromigration.1.2Thisguideisrestrictedtostructureswithastraighttestlineonaflatsurfacethatareusedtodetectfailuresduetoanopen-circuitorapercent-increaseinresistanceofthetestline.1.3Thisguideisnotintendedfortestingmetallineswhosewidthsareapproximatelyequaltoorlessthantheestimatedmeansizeofthemetalgrainsinthemetallizationline.1.4Thisguideisnotintendedforteststructuresusedtodetectrandomdefectsinametallizationline.1.5Metallizationstestedandcharacterizedarethosethatareusedinmicroelectroniccircuitsanddevices.2.ReferencedDocuments2.1ASTMStandards:F1260MTestMethodforEstimatingElectromigrationMedian-Time-To-FailureandSigmaofIntegratedCircuitMetallizations[Metric]2F1261MTestMethodforDeterminingtheAverageElec-tricalWidthofaStraight,Thin-FilmMetalLine[Metric]3.Terminology3.1DefinitionsofTermsSpecifictoThisStandard:3.1.1testchip—anareaonasemiconductorwafercontain-ingoneormoreteststructureshavingaspecifiedorimpliedpurpose.3.1.2teststructure—apassivemetallizationstructure,withterminalstopermitelectricalaccessthatisfabricatedonasemiconductorwaferbythenormalproceduresusedtomanu-facturemicroelectronicintegrateddevices.3.1.3metallization—thethin-filmmetallicconductorthatservesastheprimaryconductorpathinelectricalinterconnectsofmicroelectronicintegratedcircuits.4.SignificanceandUse4.1Thi...
