ASTM_F_1190_-_11.pdf

Designation:F119011Standard Guide forNeutron Irradiation of Unbiased Electronic Components1This standard is issued under the fixed designation F1190;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon()indicates an editorial change since the last revision or reapproval.1.Scope1.1 This guide strictly applies only to the exposure ofunbiased silicon(Si)or gallium arsenide(GaAs)semiconduc-tor components(integrated circuits,transistors,and diodes)toneutron radiation from a nuclear reactor source to determinethe permanent damage in the components.Validated 1-MeVdisplacement damage functions codified in National Standardsare not currently available for other semiconductor materials.1.2 Elements of this guide,with the deviations noted,mayalso be applicable to the exposure of semiconductors com-prised of other materials except that validated 1-MeV displace-ment damage functions codified in National standards are notcurrently available.1.3 Only the conditions of exposure are addressed in thisguide.The effects of radiation on the test sample should bedetermined using appropriate electrical test methods.1.4 This guide addresses those issues and concerns pertain-ing to irradiations with reactor spectrum neutrons.1.5 System and subsystem exposures and test methods arenot included in this guide.1.6 This guide is applicable to irradiations conducted withthe reactor operating in either the pulsed or steady-state mode.The range of interest for neutron fluence in displacementdamage semiconductor testing range from approximately 109to 10161-MeV n/cm2.1.7 This guide does not address neutron-induced single ormultiple neutron event effects or transient annealing.1.8 This guide provides an alternative to Test Method1017.3,Neutron Displacement Testing,a component of MIL-STD-883 and MIL-STD-750.The Department of Defense hasrestricted use of these MIL-STDs to programs existing in 1995and earlier.1.9 This standard does not purport to address all of thesafety concerns,if any,associated with its use.It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2.Referenced Documents2.1 ASTM Standards:2E264 Test Method for Measuring Fast-Neutron ReactionRates by Radioactivation of NickelE265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32E668 Practice for Application of Thermoluminescence-Dosimetry(TLD)Systems for Determining AbsorbedDose in Radiation-Hardness Testing of Electronic DevicesE720 Guide for Selection and Use of Neutron Sensors forDetermining Neutron Spectra Employed in Radiation-Hardness Testing of ElectronicsE721 Guide for Determining Neutron Energy Spectra fromNeutron Sensors for Radiation-Hardness Testing of Elec-tronicsE722 Practice for Characterizing Neutron Fluence Spectra inTerms of an Equivalent Monoenergetic Neutron Fluencefor Radiation-Hardness Testing of ElectronicsE1249 Practice for Minimizing Dosimetry Errors in Radia-tion Hardness Testing of Silicon Electronic Devices UsingCo-60 SourcesE1250 Test Method for Application of Ionization Chambersto Assess the Low Energy Gamma Component ofCobalt-60 Irradiators Used in Radiation-Hardness Testingof Silicon Electronic DevicesE1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic PartsE1855 Test Method for Use of 2N2222A Silicon BipolarTransistors as Neutron Spectrum Sensors and Displace-ment Damage MonitorsE2450 Practice for Application of CaF2(Mn)Thermolumi-nescence Dosimeters in Mixed Neutron-Photon Environ-mentsF980 Guide for Measurement of Rapid Annealing ofNeutron-Induced Displacement Damage in Silicon Semi-conductor Devices1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved Oct.1,2011.Published October 2011.Originallyapproved in 1988.Last previous edition approved in 2005 as F119099(2005).DOI:10.1520/F1190-11.2For referenced ASTM standards,visit the ASTM website,www.astm.org,orcontact ASTM Customer Service at serviceastm.org.For Annual Book of ASTMStandards volume information,refer to the standards Document Summary page onthe ASTM website.Copyright ASTM International,100 Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959.United States1 F1892 Guide for Ionizing Radiation(Total Dose)EffectsTesting of Semiconductor Devices2.2 Other Documents:2.2.1 The Department of Defense publishes every fewyears a compendium of nuclear reactor facilities that may besuitable for neutron irradiation of electronic components:DASIAC SR-94-009,April 1996,Guide to Nuclear Weap-ons Effects Simulation Facilities and Techniques32.3 The Offce of the Federal Register,