TM_E_1182_
_93_1998
Designation:E 1182 93(Reapproved 1998)Standard Test Method forMeasurement of Surface Layer Thickness by RadialSectioning1This standard is issued under the fixed designation E 1182;the number immediately following the designation indicates the year oforiginal adoption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.Asuperscript epsilon(e)indicates an editorial change since the last revision or reapproval.This standard has been approved for use by agencies of the Department of Defense.1.Scope1.1 This test method covers the radial sectioning tech-nique2,3,4for measurement of the thickness of thin surfacelayers,made by a wide variety of processes,on metals,alloys,carbides,and oxides.1.2 This test method is applicable to measurement of a widevariety of surface layer types where the interface between thelayer and substrate is discernible by natural color or reflectivitydifferences or by means of color or reflectivity differences dueto etching or staining.1.3 This test method does not pertain to layer thicknessmeasurements made by analysis of compositional variations.1.4 This test method deals only with the recommended testmethod and nothing in it should be construed as defining orestablishing limits of acceptability for any coating method.1.5 The measurement values stated are in the metric system,as defined in Practice E 380.1.6 This standard does not purport to address all of thesafety concerns associated with its use.It is the responsibilityof the user of this standard to establish appropriate safety andhealth practices and determine the applicability of regulatorylimitations prior to use.For specific precautionary statements,see Section 7.2.Referenced Documents2.1 ASTM Standards:B 487 Test Method for Measurement of Metal and OxideCoating Thickness by Microscopical Examination of aCross Section5E 7 Terminology Relating to Metallography6E 380 Practice for Use of the International System of Units(SI)(the Modernized Metric System)7E 407 Practice for Microetching Metals and Alloys6E 691 Practice for Conducting an Interlaboratory Study toDetermine the Precision of a Test Method7F 110 Test Method for Thickness of Epitaxial or DiffusedLayers in Silicon by the Angle Lapping and StainingTechnique83.Terminology3.1 Definitions:3.1.1 For definitions of terms used in this test method,seeTerminology E 7.3.2 Definitions of Terms Specific to This Standard:3.2.1 arcuic trigonometric measurementmethod for mea-suring the thickness of a surface layer using a radial cut ofradius R through the layer into the substrate and measurementof the widths of the cut at the top of the layer and at thelayer-substrate interface.3.2.2 radial sectioninga machining procedure for produc-ing a precise groove on the surface of a sample to a depthbelow the layer interface,that is,through a surface layer intothe substrate,using a line or spot spindle of known radius.3.3 Symbols:Symbols:3.3.1 Rradius of the machined groove.3.3.2 W1 width of the groove at the top surface.3.3.3 W2 width of the groove at the layer-substrateinterface.3.3.4 xtthickness of the surface layer.3.3.5 Ccorrelation factor to correct for the deflection ofthe spindle when the spindle contacts the specimen.4.Summary of Test Method4.1 Radial sectioning,using either a line or spot sectioningspindle with a known,constant diameter,is used to cuttangentially into the surface of a coated specimen to a depthbelow the interface between the surface layer and the substrate.4.2 The interface between the layer and substrate is revealed1This test method is under the jurisdiction of ASTM Committee E-4 onMetallography and is the direct responsibility of Subcommittee E04.14 on Quanti-tative Metallography.Current edition approved Aug.15,1993.Published October 1993.Originallypublished as E 1182 87.Last previous edition E 1182 87.2Happ,W.W.,and Shockley,W.,“Diffusion Depths in Silicon Measured byUsing Cylindrical Grooves,”Bulletin of the American Physical Society,Series II,Vol 1,1956,p.382.3McDonald,B.,and Goetzuberger,A.,“Measurement of the Depth of DiffusedLayers in Silicon by the Grooving Method,”Journal of the Electrochemical Society,Vol 109,February 1962,pp.141144.4Whitelam,F.E.,“Using Radial Sectioning to Measure Thin Layers,”MetalProgress,Vol 127,March 1985,pp.45,46,49,and 50.5Annual Book of ASTM Standards,Vol 02.05.6Annual Book of ASTM Standards,Vol 03.01.7Annual Book of ASTM Standards,Vol 14.02.8Annual Book of ASTM Standards,Vol 10.05.1Copyright ASTM,100 Barr Harbor Drive,West Conshohocken,PA 19428-2959,United States.by appropriate etching or staining techniques.For certainmaterials,such as oxide,carbide,or nitride layers,the interfacewill be clearly visible after radial sectioning.4.3 The groove is examined using a metallurgical micro-scope and the widths,W1and W2,are measured using a reticlescale or filar micrometer eyepiece.4.4 The layer thickness,xt,is calculated using the followingequation:xt5FR22SW222 CD2G1/22FR22SW122 CD2